1、raising standards worldwideNO COPYING WITHOUT BSI PERMISSION EXCEPT AS PERMITTED BY COPYRIGHT LAWBSI British StandardsWB9423_BSI_StandardColCov_noK_AW:BSI FRONT COVERS 5/9/08 12:55 Page 1Solar wafers Data sheet and product information for crystalline silicon wafers for solar cell manufacturingBS EN
2、50513:2009National forewordThis British Standard is the UK implementation of EN 50513:2009.The UK participation in its preparation was entrusted to Technical CommitteeGEL/82, Solar photovoltaic energy systems.A list of organizations represented on this committee can be obtained onrequest to its secr
3、etary.This publication does not purport to include all the necessary provisions of acontract. Users are responsible for its correct application. BSI 2009ISBN 978 0 580 61621 1ICS 27.160Compliance with a British Standard cannot confer immunity fromlegal obligations.This British Standard was published
4、 under the authority of the StandardsPolicy and Strategy Committee on 31 October 2009Amendments issued since publicationAmd. No. Date Text affectedBRITISH STANDARDBS EN 50513:2009EUROPEAN STANDARD EN 50513 NORME EUROPENNE EUROPISCHE NORM March 2009 CENELEC European Committee for Electrotechnical Sta
5、ndardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung Central Secretariat: avenue Marnix 17, B - 1000 Brussels 2009 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 50513:2009
6、 E ICS 27.160 English version Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing Tranches de silicium solaires - Fiche technique et information produit sur les tranches au silicium cristallin pour la fabrication de cellules solaires Solarsch
7、eiben - Datenblattangaben und Produktinformation fr kristalline Silizium-Scheiben zur Solarzellenherstellung This European Standard was approved by CENELEC on 2008-12-01. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this Euro
8、pean Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the Central Secretariat or to any CENELEC member. This European Standard exists in three official versions (Eng
9、lish, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the Central Secretariat has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria,
10、 Belgium, Bulgaria, Cyprus, the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland and the United Kingdom. BS EN
11、 50513:2009EN 50513:2009 2 Foreword This European Standard was prepared by the Technical Committee CENELEC TC 82, Solar photovoltaic energy systems. The text of the draft was submitted to the Unique Acceptance Procedure and was approved by CENELEC as EN 50513 on 2008-12-01. The following dates were
12、fixed: latest date by which the EN has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2009-12-01 latest date by which the national standards conflicting with the EN have to be withdrawn (dow) 2011-12-01 _ BS EN 50513:2009 3 EN 50513:2009
13、Contents 1 Scope 6 2 Normative references 6 3 Terms, definitions and acronyms 7 4 Crystallisation process .7 5 Product characteristics 7 5.1 Size .7 5.2 Electrical characteristics .8 5.3 Surface and edge characteristics 8 5.4 Chemical characteristics .9 5.5 Crystal characteristics .9 6 Packaging, ma
14、rking and storage .9 6.1 Packaging .9 6.2 Marking .9 6.3 Storage 9 7 Major changes of product and processes 9 8 Wafer thickness 10 8.1 Scope . 10 8.2 Normative references . 10 8.3 Definitions 10 8.4 Units . 10 8.5 Measuring equipment. 11 8.6 Measurement . 11 8.7 Evaluation . 12 8.8 Test report . 12
15、8.9 Precision of the procedure 12 9 Variations in thickness 13 9.1 Scope . 13 9.2 Normative references . 13 9.3 Definition 13 9.4 Units . 13 9.5 Measuring equipment. 13 9.6 Measurement 14 9.7 Evaluation . 15 9.8 Test report . 14 9.9 Precision of the procedure 15 10 Waviness and warping . 15 10.1 Sco
16、pe . 15 10.2 Normative references . 15 10.3 Definitions 15 10.4 Arrangements . 16 10.5 Test report 16 11 Grooves and step type saw mark . 16 11.1 Scope . 16 11.2 Definitions 16 11.3 Units . 17 11.4 Arrangements . 17 11.5 Measuring devices . 17 BS EN 50513:2009EN 50513:2009 4 11.6 Measuring plan . 18
17、 11.7 Test report 20 12 Corrosion rate 20 12.1 Scope . 20 12.2 Definitions 20 12.3 Implementation . 20 12.4 Analysis 21 12.5 Test report 21 13 Determining carrier lifetime measured on as cut wafer . 21 13.1 Scope . 21 13.2 Determination of carrier lifetime . 22 13.3 General measuring conditions . 23
18、 13.4 Analysis 23 13.5 Test report 24 14 Determining minority carrier bulk lifetime measured on passivated wafers (laboratory measurement) . 24 14.1 Scope . 24 14.2 Determination of carrier lifetime . 24 14.3 Analysis 26 14.4 Test report 26 15 Electrical resistivity of multi and mono crystalline sem
19、iconductor wafers . 26 15.1 Scope . 26 15.2 Normative references . 26 15.3 Definition 26 15.4 Units . 26 15.5 Measuring devices . 27 15.6 Calibration 27 15.7 Sample size 27 15.8 Measurement of silicon wafers 27 15.9 Test report 28 16 Method for the measurement of substitutional atomic carbon and int
20、erstitial oxygen content in silicon used as solar material . 28 16.1 Scope . 28 16.2 Referenced documents (Normative references) 28 16.3 Definitions 28 16.4 Units . 28 16.5 Arrangements . 28 16.6 Measurement . 28 16.7 Test report 29 Annex A (informative) Geometric dimensions, surfaces and edge chara
21、cteristics 30 Annex B (informative) Optional requirements . 33 Bibliography . 34 BS EN 50513:2009 5 EN 50513:2009 Figures Figure 1 Measurement plan for full-square and pseudo-square silicon wafers . 12 Figure 2 Sketch of waviness . 15 Figure 3 Sketch of warping . 16 Figure 4 Sketch of a groove on a
22、crystalline silicon solar wafer 16 Figure 5 Sketch of a step on a crystalline silicon solar wafer 17 Figure 6 Measurement plan for full-square and pseudo-square silicon wafers 18 Figure 7 Measurement plan for steps 19 Figure 8 Measurement plan for grooves . 19 Figure 9 Measurement plan for carrier l
23、ifetime measurement . 23 Figure A.1 Rectangular wafer with flat chamfer . 30 Figure A.2 Square wafer with round chamfer . 30 Figure A.3 Error patterns for surface and edge characteristic . 31 Figure A.4 Edge swelling 32 Figure A.5 Deviation from ideal edge . 32 Table Table 1 Surface and edge charact
24、eristics .8 BS EN 50513:2009EN 50513:2009 6 1 Scope This document describes data sheet and product information for crystalline silicon (Si) solar wafers and measurement methods for wafer properties. The document intends to provide the minimum information required for an optimal use of crystalline si
25、licon wafers in solar cell manufacturing. Clauses 5 to 7 describe the data sheet information with technical specifications of the silicon solar wafer with all essential characteristics. The product information concerns packaging, labelling and storage, and implies the commitment to inform about majo
26、r changes of the product and in the manufacturing process. This data is needed for the processing of silicon solar wafers to solar cells. Clauses 8 to 16 describe measurement methods for the characteristic properties specified in the data sheet. 2 Normative references The following referenced docume
27、nts are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. EN 50461, Solar cells Datasheet information and product data for crystalline sil
28、icon solar cells EN ISO/IEC 17025, General requirements for the competence of testing and calibration laboratories (ISO/IEC 17025) DIN 5043-2, Radioactive luminescent pigments Method of measurement and designation DIN 50431, Testing of semiconductor materials Measurement of the resistivity of silico
29、n or germanium single crystals by means of the four probe/direct current method with collinear array DIN 50432, Testing semi-conducting inorganic materials Determining conduction type for silicon or germanium using a standard test or thermosonde probe (withdrawn) DIN 50434, Testing of materials for
30、semiconductor technology Detection of crystal defects in mono-crystalline silicon using etching techniques on 111 and 100 surfaces (ASTM F 47) DIN 50438-1, Testing of materials for semiconductor technology Determination of impurity content in silicon by infrared absorption Part 1: Oxygen DIN 50438-2
31、, Testing of materials for semiconductor technology Determination of impurity content in silicon by infrared absorption Part 2: Carbon DIN 50441-1, Testing of materials for semiconductor technology Determination of the geometric dimensions of semiconductor wafers Part 1: Thickness and thickness vari
32、ation DIN 50441-5, Testing of materials for semiconductor technology Determination of the geometric dimensions of semiconductor wafers Part 5: Terms of shape and flatness deviation DIN 4760, Form deviations Concepts Classification system DIN 4768, Identification of roughness characteristics Ra, Rz,
33、Rmaxwith electrical testing machines terms, conditions of measurement DIN 879-1, Verification of geometrical parameters Dial indicator for linear measurement Part 1: With mechanical indication DIN 4774, Measurement of wave depth with electrical contact stylus instruments BS EN 50513:2009 7 EN 50513:
34、2009 3 Terms, definitions and acronyms For the purposes of this document, the following terms and definitions apply. 3.1 ingot the largest connected silicon piece after the crystallisation process 3.2 brick, column, block the semi-finished silicon product after squaring with area equal to the area o
35、f the later wafer 3.3 wafer the final product of silicon processing which is the input product for solar cell production 3.4 batch size the smallest unit of wafers for which traceability is guaranteed 3.5 thickness variation d (Total Thickness Variation, TTV) the largest difference from several thic
36、kness measurement values 3.6 Etch Pit Density (EPD) the number of etch pits per unit area 4 Crystallisation process The crystallisation process has to be specified e.g. ingot casting, Bridgman. 5 Product characteristics 5.1 Size See Annex A. Shape: Rectangular, square, round, pseudo square Dimension
37、s: Dimensions as nominal values with tolerances, declared in mm Area: Declaration of nominal area in mm2Thickness: Average thickness with tolerances in m (according to Clause 8) TTV: Maximum value (according to Clause 9) Information on rectangularity (where applicable): Maximum tolerance from 90 ang
38、le in degrees NOTE 1 The actual wafer edge may be approximated by a line determined by least squares fitting. BS EN 50513:2009EN 50513:2009 8 Information on the type of angle: Flat chamfer: Length of hypotenuses as chamfer width (H) and angle between the wafer edge and hypotenuses () (see Figure A.1
39、) Round chamfer: Length of a leg of a right triangle (D) and diameter of the round crystal (E) (see Figure A.2) Information about waviness and warping: (According to Clause 10) NOTE 2 All measurements are to be carried out at standard measurement temperature (25 2) C. 5.2 Electrical characteristics
40、Information on the dopant (B, P, Ga ) and the conductivity type (p or n). Resistivity according to Clause 15 with tolerances in cm. Minimum value of average effective minority carrier lifetime measured (for multi-crystalline material on the wafer, for mono-crystalline material on the face of the ing
41、ot) with -PCD or QSSPC according to Clause 13 or 14. 5.3 Surface and edge characteristics Information about the maximum allowable defects on the wafer, e.g. chipping on the surface or at the edge, pinholes, saw marks, cracks, edge swelling (see Figures A.3 to A.5). Table 1 Surface and edge character
42、istics Term Description Specification Surface chipping Chipping on the wafer surface Maximum permissible length, width and number (and exclusion of positions if required) Cracks Technically detectable cracks Maximum permissible length and number Holes Permeating and non-permeating holes of all sizes
43、 (e.g. by air inclusions during the drawing process) Maximum permissible length, width and number (and exclusion of positions if required) Inclusions Inclusions in the silicon matrix visible to the naked eye which affect the electrical, chemical or optical characteristics of the wafer Maximal permis
44、sible number (and dimensions if required) Visible contaminations Contaminations visible to the naked eye Type and maximum permissible size if any contamination is allowed Not visible contaminations For an assessment, the etching rate can be specified according to Clause 12 Type and maximal permissib
45、le size Saw mark Grooves which typically result from failures in the slicing process; measurement according to Clause 11 Maximum permissible depth and number (per area unit) Step type saw mark Steps which typically result from failures in the slicing process; measurement according to Clause 11 Maxim
46、al permissible depth and number (per area unit) Edge chips, chipping Chipping at the wafer edge which is not visible by backlight illumination (see Figure A.3) Maximum permissible length, width and number (and exclusion of positions if required) Local thickness fluctuations (LATF) A localised swelli
47、ng of the wafer edge which is not detected by measurement of TTVPVin accordance with Clause 9 (see Figure A.4) Distance a and limits for parameters b and c BS EN 50513:2009 9 EN 50513:2009 Table 1 Surface and edge characteristics (continued) Term Description Specification V-Chips, indents (v-type),
48、nicks V-shaped indents/chips visible in backlight (corner radius 0,3 mm) and wafer edge (see Figure A.3 b) Maximum permissible length, width and number Edge breakage, indents (not including v-type) Non V-shaped indents/chips visible in backlight (corner radius 0,3 mm) and wafer edge (see Figure A.3
49、c) Maximum permissible length, width and number Edge deviation Deviation from the ideal edge approximated by a line determined by least squares fitting (see Figure A.5) Maximum deviation from the fitted line and minimal wavelength NOTE In case of alternative terms, the preferred term is marked by underlining. 5.4 Chemical characteristics Specification of oxygen and carbon content determined according to Clause 16. 5.5 Crysta
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