1、BRITISH STANDARD Components for low-voltage surge protective devices Part 341 : Specification for thyristor surge suppressors (TSS) The European Standard EN 61643-341:2001 has the status ofa British Standard ICs 31.080.20 BS EN 61643-34112001 Wk present to the responsible international/European comm
2、ittee any enquiries on the interpretation, or proposals for change, and keep the UK interests informed; monitor related international and European developments and promulgate them in the UK. - A list of organizations represented on this subcommittee can be obtained on request to its secretary. From
3、1 January 1997, all IEC publications have the number 60000 added to the old number. For instance, IEC 27-1 has been renumbered as IEC 60027-1. For a period oftime during the change over from one numbering system to the other, publications may contain identifiers from both systems. Cr oss-r e fer enc
4、 e s Attention is drawn to the fact that CEN and CENELEC Standards normally include an annex which lists normative references to international publications with their corresponding European publications. The British Standards which implement these international or European publications may be found
5、in the BSI Standards Catalogue under the section entitled Tnternational Standards Correspondence Index”, or by using the Find” facility of the BSI Standards Electronic Catalogue. A British Standard does not purport to include all the necessary provisions of a contract. Users of British Standards are
6、 responsible for their correct application. Compliance with a British Standard does not of itself confer immunity from legal obligations. Summary of pages This document comprises a front cover, an inside front cover, the EN title page, pages 2 to 65 and a back cover. The BSI copyright date displayed
7、 in this document indicates when the document was last issued. Amendments issued since publication Amd. No. I Date I Comments O BSI 15 March 2002 ISBN O 580 39102 7 EUROPEAN STANDARD EN 61643-341 NORME EUROPENNE EUROPISCHE NORM Decem ber 2001 ICs 31.080.10 English version Components for low-voltage
8、surge protective devices Part 341 : Specification for thyristor surge suppressors (TSS) (IEC 61643-341 12001) Com posan ts pour parafoudres basse tension Partie 341 : Spcifications pour les parafoudres thyristor (CE1 61643-341 12001) Bauelemente fr bers pan n ungssch utzgerte fr Niederspannung Teil
9、341 : Festlegungen fr Suppressordioden (TSS) (IEC 61643-341 12001) This European Standard was approved by CENELEC on 2001-12-01. CENELEC members are bound to comply with the CENKENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national stan
10、dard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the Central Secretariat or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any oth
11、er language made by translation under the responsibility of a CENELEC member into its own language and notified to the Central Secretariat has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Czech Republic, Denmark, Finland,
12、 France, Germany, Greece, Iceland, Ireland, Italy, Luxembourg, Malta, Netherlands, Norway, Portugal, Spain, Sweden, Switzerland and United Kingdom. CENELEC European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische
13、 Normung Central Secretariat: rue de Stassart 35, B - 1050 Brussels O 2001 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 61643-341:2001 E Page 2 EN 61643-3412001 Foreword The text of document 37B/58/FDIS, future edition 1 of IEC
14、 61 643-341, prepared by SC 37B, Specific components for surge arresters and surge protective devices, of IEC TC 37, Surge arresters, was submitted to the IEC-CENELEC parallel vote and was approved by CENELEC as EN 61643-341 on 2001-12-01. The following dates were fixed: - latest date by which the E
15、N has to be implemented at national level by publication of an identical national standard or by endorsement - latest date by which the national standards conflicting with the EN have to be withdrawn (dop) 2002-09-01 (dow) 2004-12-01 Annexes designated “normative“ are part of the body of the standar
16、d. Annexes designated “informative“ are given for information only. In this standard, annexes A and ZA are normative and annex B is informative. Annex ZA has been added by CENELEC. O BSI 15 March 2002 Page 3 EN 61643-3412001 CONTENTS 6 1 Scope . 2 Normative references 3 Terms, letter symbols and ion
17、s . 3.1 3.2 Terms an Parametric terms, letter symbols and definitions . 3.2.1 TSS 13 3.2.2 Terminals 14 3.2.3 Characteristic terminology 15 . 18 4 Basic function and component description 4.1 TSS types 4.2 Basic device structure 4.3 Device e 4.4 Switching quadrant char 4.4.1 Off-state region . 4.4.2
18、 Breakdown region . .22 4.4.3 Negative resistance region . 23 4.4.4 On-state region 23 4.5 Performance criteria of a TSS 23 4.5.1 System loading 23 4.5.3 Durability . 4.6 Additional TSS structures . 4.6.1 Gated TSS 4.6.2 Unidirectional blocking TSS 4.6.3 Unidirectional conducting TSS . . .26 4.6.4 B
19、idirectional TSS . 26 4.6.5 Bidirectional TRIAC TSS . .27 27 5.1 Test conditions 5.1.1 Standard atm 5.1.2 Measurement errors 5.1.3 Measurement accuracy. 5.1.5 Multiple TSS 28 5.1.6 Gated TSS testing . . 28 5.2 Service conditions . . .29 5.2.1 Normal service conditions 29 5.2.2 Abnormal service condi
20、tions . .29 5.3 Failures and fault modes 30 5.3.5 Low holding current fault mode 30 5.3.6 Catastrophic (cataleptic) failure . 30 5.3.7 Short-circuit fault mode 30 5.3.8 Open-circuit fault mode 30 O BSI 15 March 2002 Page 4 EN 61643-3412001 5.3.9 Critical failure . 5.3.1 O Fail-safe . 5.4 Rating test
21、 procedure . 5.4.1 Repetitive pe 5.4.2 Repetitive peak on-state current, ITRM . 32 5.4.3 Non-repetitive peak on-state current, ITSM . 33 5.4.4 Non-repetitive peak pulse current, Ipps . .34 5.4.5 Repetitive peak reverse voltage, VRRM . 35 5.4.6 Non-repetitive peak forward current, IFSM . 35 5.4.7 5.4
22、.8 Repetitive peak forward current, IFRM Critical rate of rise of on-state current, dddf 5.5 Characteristic test procedures 5.5.1 Off-state current, ID 5.5.2 Repetitive peak off-state current, IDRM 5.5.3 Repetitive peak reverse current, IRRM . .38 5.5.4 Breakover voltage, V(BO) and current, /(BO) 38
23、 5.5.5 On-state voltage, VT . . 40 5.5.6 Holding current, IH .44 5.5.7 Off-state capacitance, Co .44 5.5.8 Breakdown voltage, V(BR) 5.5.1 O Forward voltage, VF 5.5.1 1 Peak forward recovery voltage, VFRM 5.5.9 Switching voltage, Vs and current, Is . 5.5.12 Critical rate of rise of off-state voltage,
24、 dv/df . 5.5.1 3 Temperature coefficient of breakdown voltage, V(BR) 49 5.5.14 Variation of holding current with temperature 5.5.1 5 Temperature derating . .50 5.5.16 Thermal resistance, R . .50 5.5.17 Transient thermal imp ce, Zth(f) . 51 gate current, VGDM, IGDM .53 5.5.19 Gate reverse current, ad
25、jacent terminal open, /GAO, IGKO 53 5.5.20 Gate reverse current, main terminals short-circuited, /GAS, IGKS 54 Gate reverse current, on-state, /GAT, IGKT 5.5.22 Gate reverse current, forward conducting state, IGAF, IGKF . 5.5.23 Gate switching charge, QGS . 5.5.25 Gate-to-adjacent terminal breakover
26、 voltage, VGK(BO), VGA(BO). . .59 49 . .50 . 5.5.18 Gate-to-adjacent terminal peak off-state voltage and peak off-state 5.5.21 5.5.24 Peak gate switching current, IGSM . 58 O BSI 15 March 2002 Page 5 EN 61643-3412001 Annex A (normative) Abnormal service conditions A.l Environmental conditions A.l .I
27、 Climatic conditio A.1.2 Biological conditi A.1.3 Chemically active substances A.l .5 Contaminating fluids 60 A.2 Mechanical conditions . 60 A.3 Miscellaneous factors 61 Annex B (informative) US verification standards with referenced impulse waveforms . 62 60 A.1.4 Mechanically or B.l B.2 B.3 Test w
28、aveforms Central office equipment verification . Customer premise equipment verification . Annex ZA (normative) Normative references to international publications with their corresponding European publications . O BSI 15 March 2002 Page 6 EN 61643-3412001 COMPONENTS FOR LOW-VOLTAGE SURGE PROTECTIVE
29、DEVICES - Part 341 : Specification for thyristor surge suppressors (TSS) 1 Scope This part of IEC 61643 is a test specification standard for thyristor surge suppressor (TSS) components designed to limit overvoltages and divert surge currents by clipping and crowbarring actions. Such components are u
30、sed in the construction of surge protective devices, particularly as they apply to telecommunications. This standard contains information on - terms, letter symbols, and definitions - basic functions, configurations and component structure - service conditions and fault modes - rating verification a
31、nd characteristic measurement 2 Normative references The following normative documents contain provisions which, through reference in this text, constitute provisions of this part of IEC 61643. For dated references, subsequent amend- ments to, or revisions of, any of these publications do not apply.
32、 However, parties to agreements based on this part of IEC 61643 are encouraged to investigate the possibility of applying the most recent editions of the normative documents indicated below. For undated references, the latest edition of the normative document referred to applies. Members of IEC and
33、IS0 maintain registers of currently valid International Standards. IEC 60050( 191), Infernafional Elecfrofechnical Vocabulary - Chapfer 191: Dependabilify and qualify of service IEC 60050(702), Infernafional Elecfrofechnical Vocabulary - Chapfer 702: Oscillafions, signals and relafed devices IEC 600
34、99-4, Surge arresfors - Parf 4: Mefal-oxide surge arresfors wifhouf gaps for BA.C. asysfems IEC 60721-3-3, Classificafion of environmenfal condifions - Parf 3: Classificafion of groups of environmenfal paramefers and fheir severifies - Secfion 3: Sfafionary use af weafher- profecfed locafions IEC 60
35、721-3-9, Classificafion of environmenfal condifions - Parf 3: Classificafion of groups of environmenfal paramefers and fheir severifies - Secfion 9: Microclimafes inside producfs IEC 60747-1 :I 983, Semiconducfor devices - Discrefe devices and infegrafed circuifs - Parf 1: General IEC 60747-2: 1983,
36、 Semiconducfor devices Discrefe devices and infegrafed circuifs - Parf 2: Recfifier diodes O BSI 15 March 2002 Page 7 EN 61643-3412001 IEC 60747-6:1983, Semiconducfor devices - Discrefe devices and infegrafed circuifs - Parf 6: Th yris f ors NOTE The TSS has substantially different characteristics a
37、nd usage to the type of thyristor covered by IEC 60747-6. These differences necessitate the modification of some characteristic descriptions and the introduction of new terms. Such changes and additions are indicated in clause 3. IEC 60749:1996, Semiconducfor devices - Mechanical and climafic fesf m
38、efhods IEC 61 000-4-5: 1995, Elecfromagnefic compafibilify (EMC) - Parf 4: Tesfing and measuremenf fechniques - Secfion 5: Surge immunify fesf IEC 61 083-1 : 1991 Digifal recorders for measuremenfs in high-volfage impulse fesfs - Parf 1: Requiremenfs for digifal recorders ITU-T Recommendation K.20:1
39、996 Resisfibilify of felecommunicafion swifching equipmenf fo overvolfages and overcurrenfs ITU-T Recommendation K.21 :I 996 Resisfibilify of subscribers ferminal fo overvolfages and overcurrenfs ITU-T Recommendation K.28: 1993 Characferisfics of semi-conducfor arresfer assemblies for fhe profecfion
40、 of felecommunicafions insfallafions 3 Terms, letter symbols and definitions For the purpose of this part of IEC 61643, the following definitions apply. 3.1 Parametric terms, letter symbols and definitions Where appropriate, terms, letter symbols and definitions are used from existing thyristor (IEC
41、 60747-6) and rectifier diode (IEC 60747-2) standards. NOTE 1 IEC 60747-1, chapter V, clause 2.1 .I, states “IEC 60027 recommends the letters V and v only as reserve symbols for voltage; however, in the field of semiconductor devices, they are so widely used that in this publication they are on the
42、same plane as U and u.“ This standard uses the letters V and v for voltage with the letters U and u as alternatives. NOTE 2 When several distinctive forms of letter symbol exist, the most commonly used form is given first. 3.1.1 main terminal ratings listed ratings cover the appropriate requirements
43、 of the blocking, conducting and switching quadrants 3.1.1.1 repetitive peak off-state voltage, VDRM rated maximum (peak) instantaneous voltage that may be applied in the off-state conditions including all D D.C. Cl and repetitive voltage components 3.1 .I .2 repetitive peak on-state current, IT, ra
44、ted maximum (peak) value of DA.C. Cl power frequency on-state current of specified waveshape and frequency which may be applied continuously O BSI 15 March 2002 Page 8 EN 61643-3412001 3.1 .I .3 non-repetitive peak on-state current, ITS, rated maximum (peak) value of DA.C. Cl power frequency on-stat
45、e surge current of specified waveshape and frequency which may be applied for a specified time or number of D A.C. Cl cycles 3.1 .I .4 non-repetitive peak impulse current, I, ITS, rated maximum value of peak impulse current of specified amplitude and waveshape that may be applied NOTE There are seve
46、ral symbols that are used for this rating. The merits of these symbols are as follows: I, This is technically correct as it is the maximum or peak (M) non-repetitive (S) value of Ipp. I, For short duration impulses this is not technically correct as the maximum (M) value of non-repetitive (S) curren
47、t may not occur when the device is in the on-state (T) condition. I, The use of this symbol for a non-repetitive value is discouraged. This symbol is the rated maximum (M) repetitive value of I,. I, The use of this symbol for a rated value is discouraged. The term peak impulse current is a circuit p
48、arameter and is defined as the peak current for a series of essentially identical pulses. 3.1 .I .5 repetitive peak reverse voltage, VRRM rated maximum (peak) instantaneous voltage that may be applied in the reverse blocking direction including all D D.C. Cl and repetitive voltage components 3.1 .I
49、.6 non-repetitive peak forward current, IFS, rated maximum (peak) value of D A.C. Cl power frequency forward surge current of specified waveshape and frequency which may be applied for a specified time or number of DA.C. Cl cycles 3.1 .I .7 repetitive peak forward current, IF, rated maximum (peak) value of DA.C. Cl power frequency forward current of specified waveshape and frequency which may be applied continuously 3.1 .I .8 critical rate of rise of on-state current, dildf, (diTldf)cr rated value of the rate of rise of curre
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