1、raising standards worldwideNO COPYING WITHOUT BSI PERMISSION EXCEPT AS PERMITTED BY COPYRIGHT LAWBSI Standards PublicationBS EN 62047-7:2011Semiconductor devices Micro-electromechanical devices Part 7: MEMS BAW filter and duplexer for radio frequency control and selectionBS EN 62047-7:2011 BRITISH S
2、TANDARDNational forewordThis British Standard is the UK implementation of EN 62047-7:2011. It is identical to IEC 62047-7:2011. The UK participation in its preparation was entrusted to Technical Committee EPL/47, Semiconductors.A list of organizations represented on this committee can be obtained on
3、 request to its secretary.This publication does not purport to include all the necessary provisions of a contract. Users are responsible for its correct application. BSI 2011 ISBN 978 0 580 60628 1 ICS 31.080.99 Compliance with a British Standard cannot confer immunity from legal obligations.This Br
4、itish Standard was published under the authority of the Standards Policy and Strategy Committee on 31 August 2011.Amendments issued since publicationDate T e x t a f f e c t e dBS EN 62047-7:2011EUROPEAN STANDARD EN 62047-7 NORME EUROPENNE EUROPISCHE NORM August 2011 CENELEC European Committee for E
5、lectrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung Management Centre: Avenue Marnix 17, B - 1000 Brussels 2011 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref.
6、No. EN 62047-7:2011 E ICS 31.080.99 English version Semiconductor devices - Micro-electromechanical devices - Part 7: MEMS BAW filter and duplexer for radio frequency control and selection (IEC 62047-7:2011) Dispositifs semiconducteurs - Dispositifs microlectromcaniques - Partie 7: Filtre et duplexe
7、ur BAW MEMS pour la commande et le choix des frquences radiolectriques (CEI 62047-7:2011) Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 7: BAW-MEMS-Filter und -Duplexer zur Hochfrequenz-Regelung und -Auswahl(IEC 62047-7:2011) This European Standard was approved by CENELEC on 2011
8、-07-21. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be o
9、btained on application to the Central Secretariat or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the C
10、entral Secretariat has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, L
11、uxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland and the United Kingdom. BS EN 62047-7:2011EN 62047-7:2011 - 2 - Foreword The text of document 47F/79/FDIS, future edition 1 of IEC 62047-7, prepared by SC 47F, Micro-electromechanical
12、 systems, of IEC TC 47, Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by CENELEC as EN 62047-7 on 2011-07-21. Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. CEN and CENELEC shall not be he
13、ld responsible for identifying any or all such patent rights. The following dates were fixed: latest date by which the EN has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2012-04-21 latest date by which the national standards conflictin
14、g with the EN have to be withdrawn (dow) 2014-07-21 _ Endorsement notice The text of the International Standard IEC 62047-7:2011 was approved by CENELEC as a European Standard without any modification. In the official version, for Bibliography, the following notes have to be added for the standards
15、indicated: IEC 60368-1:2000 + A1:2004 NOTE Harmonized as EN 60368-1:2000 + A1:2004 (not modified). IEC 60368-2-2 NOTE Harmonized as EN 60368-2-2. IEC 60862-1:2003 NOTE Harmonized as EN 60862-1:2003 (not modified). IEC 60862-2 NOTE Harmonized as EN 60862-2. _ 2 62047-7 IEC:2011 CONTENTS FOREWORD . 4
16、1 Scope . 6 2 Normative references . 6 3 Terms and definitions . 6 3.1 General terms . 6 3.2 Related with BAW filter 7 3.3 Related with BAW duplexer . 9 3.4 Characteristic parameters . 10 3.4.1 BAW resonator 10 3.4.2 BAW filter and duplexer . 13 3.4.3 Temperature characteristics 16 4 Essential ratin
17、gs and characteristic parameters 16 4.1 Resonator, filter and duplexer marking . 16 4.2 Additional information 17 5 Test methods . 17 5.1 Test procedure 17 5.2 RF characteristics . 19 5.2.1 Insertion attenuation, IA . 19 5.2.2 Return attenuation, RA 20 5.2.3 Bandwidth . 21 5.2.4 Isolation 21 5.2.5 R
18、ipple 22 5.2.6 Voltage standing wave ratio (VSWR) . 22 5.2.7 Impedances of input and output . 23 5.3 Reliability test method . 23 5.3.1 Test procedure 23 Annex A (informative) Geometries of BAW resonators . 25 Annex B (informative) Operation of BAW resonators 26 Bibliography 28 Figure 1 Basic struct
19、ure of BAW resonator . 7 Figure 2 Topologies for BAW filter design 8 Figure 3 Frequency responses of ladder and lattice type BAW filters . 8 Figure 4 An example of BAW duplexer configuration 9 Figure 5 Equivalent circuit of BAW resonator (one-port resonator) . 10 Figure 6 Measurement procedure of BA
20、W filters and duplexers . 18 Figure 7 Electrical measurement setup of BAW resonators, filters and duplexers . 19 Figure 8 Insertion attenuation of BAW filter 20 Figure 9 Return attenuation of BAW filter . 21 Figure 10 Isolation (Tx-Rx) of BAW duplexer 22 Figure 11 Ripple of BAW filter 22 Figure 12 S
21、mith chart plot of input and output impedances of BAW filter 23 Figure 13 Block diagram of a test setup for evaluating the reliability of BAW resonators and filters 24 62047-7 IEC:2011 3 Figure A.1 Geometry comparison of BAW resonators . 25 Figure B.1 Modified BVD (Butterworth-Van Dyke) equivalent c
22、ircuit model . 27 4 62047-7 IEC:2011 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 7: MEMS BAW filter and duplexer for radio frequency control and selection FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organiz
23、ation for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, IE
24、C publishes International Standards, Technical Specifications, Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt wit
25、h may participate in this preparatory work. International, governmental and non-governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for Standardization (ISO) in accordance with conditions determined by ag
26、reement between the two organizations. 2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international consensus of opinion on the relevant subjects since each technical committee has representation from all interested IEC National Committees. 3) IE
27、C Publications have the form of recommendations for international use and are accepted by IEC National Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC Publications is accurate, IEC cannot be held responsible for the way in which they are us
28、ed or for any misinterpretation by any end user. 4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications transparently to the maximum extent possible in their national and regional publications. Any divergence between any IEC Publication and the c
29、orresponding national or regional publication shall be clearly indicated in the latter. 5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible
30、for any services carried out by independent certification bodies. 6) All users should ensure that they have the latest edition of this publication. 7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and members of its technical committees
31、 and IEC National Committees for any personal injury, property damage or other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC Publications. 8
32、) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is indispensable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rig
33、hts. IEC shall not be held responsible for identifying any or all such patent rights. International Standard IEC 62047-7 has been prepared by subcommittee 47F: Micro-electromechanical systems, of IEC technical committee 47: Semiconductor devices. The text of this standard is based on the following d
34、ocuments: FDIS Report on voting 47F/79/FDIS 47F/87/RVD Full information on the voting for the approval of this standard can be found in the report on voting indicated in the above table. This publication has been drafted in accordance with the ISO/IEC Directives, Part 2. 62047-7 IEC:2011 5 The commi
35、ttee has decided that the contents of this publication will remain unchanged until the stability date indicated on the IEC web site under “http:/webstore.iec.ch“ in the data related to the specific publication. At this date, the publication will be reconfirmed, withdrawn, replaced by a revised editi
36、on, or amended. IMPORTANT The “colour inside” logo on the cover page of this publication indicates that it contains colours which are considered to be useful for the correct understanding of its contents. Users should therefore print this publication using a colour printer. 6 62047-7 IEC:2011 SEMICO
37、NDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 7: MEMS BAW filter and duplexer for radio frequency control and selection 1 Scope This part of IEC 62047 describes terms, definition, symbols, configurations, and test methods that can be used to evaluate and determine the performance characterist
38、ics of BAW resonator, filter, and duplexer devices as radio frequency control and selection devices. This standard specifies the methods of tests and general requirements for BAW resonator, filter, and duplexer devices of assessed quality using either capability or qualification approval procedures.
39、 2 Normative references Void. 3 Terms and definitions For the purposes of this document, the following terms and definitions apply. 3.1 General terms 3.1.1 bulk acoustic wave BAW acoustic wave propagating in a bulk body 3.1.2 BAW resonator resonator employing bulk acoustic wave NOTE BAW resonator co
40、nsists of piezoelectric material between top and bottom electrodes, as shown in Figure 1. The top and bottom electrodes which can be made to vibrate in a vertical direction of the deposited piezoelectric film. The electrodes are either two air-to-solid interfaces or an acoustic Bragg reflector and a
41、n air-to-solid interface. The former is often called the film bulk acoustic resonator (FBAR), and the latter is called the solidly-mounted resonator (SMR). 62047-7 IEC:2011 7 AC power supplyElectrode Piezoelectric filmAir-to-solidinterfaceKey Layers of a piece of BAW resonator Components to operate
42、a BAW resonator Electrode To provide electrical input to a body of piezoelectric film and electrical connections with a external circuit AC power supply Electric power supply to vibrate a BAW resonator Piezoelectric film Body layer of a kind of BAW resonator Air to solid interface Figure 1 Basic str
43、ucture of BAW resonator 3.1.3 electrode electrically conductive plate in proximity to or film in contact with a face of the piezoelectric film by means of which a polarizing or driving field is applied to the element IEC/TS 61994-1, 3.21 3.1.4 piezoelectric film film which has piezoelectricity NOTE
44、Piezoelectric films can be distinguished as non-ferroelectric and ferroelectric materials. The non-ferroelectric materials, such as AlN (aluminium nitride) and ZnO (zinc oxide) have low dielectric constant, small dielectric loss, good hardness, and excellent insulating properties. Thus, they are goo
45、d for microwave resonator and filter applications. The ferroelectric materials, such as PZT (lead-zirconate-titanate) and PLZT (lead-lanthanum-zirconate) have high dielectric constant, large dielectric loss, and fair insulating properties. Thus, they are good for memory and actuator applications. 3.
46、1.5 direct piezoelectric effect effect which a mechanical deformation of piezoelectric material produces a proportional change in the electric polarization of that material 3.1.6 converse (or reverse) piezoelectric effect effect which mechanical stress proportional to an acting external electric fie
47、ld is induced in the piezoelectric material NOTE Converse piezoelectric effect is widely being used for acoustic wave resonators and filters, resonant sensors, oscillators, ultrasonic wave generators, and actuators. Direct piezoelectric effect is usually applied for various piezoelectric sensors and
48、 voltage generators. 3.2 Related with BAW filter Figure 2 shows topologies for BAW filter design. IEC 1211/11 8 62047-7 IEC:2011 a) Ladder type b) Lattice type Figure 2 Topologies for BAW filter design NOTE BAW resonators are connected in series and parallel for forming electrical filters, as shown
49、in Figure 2. The resonant frequencies of series and parallel resonators should be different to secure the bandwidth of the BAW filter. 3.2.1 ladder filter filter having a cascade or tandem connection of alternating series and shunt BAW resonators NOTE BAW resonator connected in series should have slightly higher resonant frequency than that of a parallel BAW resonator. The parallel resonant frequency of the parallel BAW resonator needs to
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