EN 62276-2016 en Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods.pdf

1、Single crystal wafers for surface acoustic wave (SAW)device applications Specifications and measuring methodsBS EN 62276:2016BSI Standards PublicationWB11885_BSI_StandardCovs_2013_AW.indd 1 15/05/2013 15:06National forewordThis British Standard is the UK implementation of EN 62276:2016. It is identi

2、cal to IEC 62276:2016. It supersedes BS EN 62276:2013 which iswithdrawn.The UK participation in its preparation was entrusted to Technical Committee EPL/49, Piezoelectric devices for frequency control and selection.A list of organizations represented on this committee can be obtained onrequest to it

3、s secretary.This publication does not purport to include all the necessary provisions ofa contract. Users are responsible for its correct application. The British Standards Institution 2016.Published by BSI Standards Limited 2016ISBN 978 0 580 89222 6ICS 31.140Compliance with a British Standard cann

4、ot confer immunity fromlegal obligations.This British Standard was published under the authority of theStandards Policy and Strategy Committee on 31 December 2016.Amendments/corrigenda issued since publicationDate Text affectedBRITISH STANDARDBS EN 62276:2016EUROPEAN STANDARD NORME EUROPENNE EUROPIS

5、CHE NORM EN 62276 December 2016 ICS 31.140 Supersedes EN 62276:2013 English Version Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods (IEC 62276:2016) Tranches monocristallines pour applications utilisant des dispositifs ondes acoustique

6、s de surface (OAS) - Spcifications et mthodes de mesure (IEC 62276:2016) Einkristall-Wafer fr Oberflchenwellen-(OFW-)Bauelemente - Festlegungen und Messverfahren (IEC 62276:2016) This European Standard was approved by CENELEC on 2016-11-28. CENELEC members are bound to comply with the CEN/CENELEC In

7、ternal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC Management Centre or to a

8、ny CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the same status as the o

9、fficial versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembour

10、g, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland, Turkey and the United Kingdom. European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung CEN-CE

11、NELEC Management Centre: Avenue Marnix 17, B-1000 Brussels 2016 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members. Ref. No. EN 62276:2016 E BS EN 62276:2016EN 62276:2016 2 European foreword The text of document 49/1144/CDV, future edition 3 of IEC

12、 62276, prepared by IEC/TC 49 “Piezoelectric, dielectric and electrostatic devices and associated materials for frequency control, selection and detection” was submitted to the IEC-CENELEC parallel vote and approved by CENELEC as EN 62276:2016. The following dates are fixed: latest date by which the

13、 document has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2017-08-28 latest date by which the national standards conflicting with the document have to be withdrawn (dow) 2019-11-28 This document supersedes EN 62276:2013. Attention is d

14、rawn to the possibility that some of the elements of this document may be the subject of patent rights. CENELEC and/or CEN shall not be held responsible for identifying any or all such patent rights. Endorsement notice The text of the International Standard IEC 62276:2016 was approved by CENELEC as

15、a European Standard without any modification. IEC 61019-1 NOTE Harmonized as EN 61019-1. IEC 61019-2 NOTE Harmonized as EN 61019-2. IEC 61019-3 NOTE Harmonized as EN 61019-3. ISO 4287:1997 NOTE Harmonized as EN ISO 4287:1998. BS EN 62276:2016EN 62276:2016 3 Annex ZA (normative) Normative references

16、to international publications with their corresponding European publications The following documents, in whole or in part, are normatively referenced in this document and are indispensable for its application. For dated references, only the edition cited applies. For undated references, the latest e

17、dition of the referenced document (including any amendments) applies. NOTE 1 When an International Publication has been modified by common modifications, indicated by (mod), the relevant EN/HD applies. NOTE 2 Up-to-date information on the latest versions of the European Standards listed in this anne

18、x is available here: www.cenelec.eu. Publication Year Title EN/HD Year IEC 60758 2016 Synthetic Quartz Crystal - Specifications and guidelines for use EN 60758 2016 ISO 2859-1 1989 Sampling procedures for inspection by attributes; part_1: sampling plans indexed by acceptable quality level (AQL) for

19、lot-by-lot inspection - - BS EN 62276:2016 2 IEC 62276:2016 IEC 2016 CONTENTS FOREWORD . 5 INTRODUCTION . 7 1 Scope 8 2 Normative references 8 3 Terms and definitions 8 3.1 Single crystals for SAW wafer . 8 3.2 Terms and definitions related to LN and LT crystals 9 3.3 Terms and definitions related t

20、o all crystals 9 3.4 Flatness 10 3.5 Definitions of appearance defects . 12 3.6 Other terms and definitions . 13 4 Requirements 14 4.1 Material specification 14 4.1.1 Synthetic quartz crystal . 14 4.1.2 LN . 15 4.1.3 LT 15 4.1.4 LBO, LGS 15 4.2 Wafer specifications 15 4.2.1 General . 15 4.2.2 Diamet

21、ers and tolerances 15 4.2.3 Thickness and tolerance 15 4.2.4 Orientation flat . 15 4.2.5 Secondary flat . 16 4.2.6 Back surface roughness 16 4.2.7 Warp . 16 4.2.8 TV5 or TTV 16 4.2.9 Front (propagation) surface finish 17 4.2.10 Front surface defects . 17 4.2.11 Surface orientation tolerance . 18 4.2

22、.12 Inclusions 18 4.2.13 Etch channel number and position of seed for quartz wafer . 18 4.2.14 Bevel . 18 4.2.15 Curie temperature and tolerance 18 4.2.16 Lattice constant . 18 4.2.17 Bulk resistivity (conductivity) for reduced LN and LT 19 5 Sampling plan 19 5.1 General . 19 5.2 Sampling. 19 5.3 Sa

23、mpling frequency 19 5.4 Inspection of whole population 19 6 Test methods . 19 6.1 Diameter . 19 6.2 Thickness . 20 6.3 Dimension of OF . 20 6.4 Orientation of OF 20 6.5 TV5 . 20 BS EN 62276:2016IEC 62276:2016 IEC 2016 3 6.6 Warp . 20 6.7 TTV 20 6.8 Front surface defects 20 6.9 Inclusions . 20 6.10 B

24、ack surface roughness 20 6.11 Orientation 20 6.12 Curie temperature . 20 6.13 Lattice constant 20 6.14 Bulk resistivity . 21 7 Identification, labelling, packaging, delivery condition 21 7.1 Packaging . 21 7.2 Labelling and identification 21 7.3 Delivery condition . 21 8 Measurement of Curie tempera

25、ture 21 8.1 General . 21 8.2 DTA method 21 8.3 Dielectric constant method 22 9 Measurement of lattice constant (Bond method) 23 10 Measurement of face angle by X-ray 24 10.1 Measurement principle 24 10.2 Measurement method . 25 10.3 Measuring surface orientation of wafer 25 10.4 Measuring OF flat or

26、ientation 25 10.5 Typical wafer orientations and reference planes 25 11 Measurement of bulk resistivity 26 11.1 Resistance measurement of a wafer . 26 11.2 Electrode 27 11.3 Bulk resistivity . 27 12 Visual inspections Front surface inspection method 27 Annex A (normative) Expression using Euler angl

27、e description for piezoelectric single crystals . 29 A.1 Wafer orientation using Euler angle description 29 Annex B (informative) Manufacturing process for SAW wafers . 32 B.1 Crystal growth methods 32 B.1.1 Czochralski growth method 32 B.1.2 Vertical Bridgman method 34 B.2 Standard mechanical wafer

28、 manufacturing 35 B.2.1 Process flow-chart . 35 B.2.2 Cutting both ends and cylindrical grinding 36 B.2.3 Marking orientation 37 B.2.4 Slicing . 37 B.2.5 Double-sided lapping . 37 B.2.6 Bevelling (edge rounding) 37 B.2.7 Mirror polishing 37 Bibliography 38 Figure 1 Wafer sketch and measurement point

29、s for TV5 determination 10 Figure 2 Schematic diagram of TTV . 11 BS EN 62276:2016 4 IEC 62276:2016 IEC 2016 Figure 3 Schematic diagram of warp 11 Figure 4 Schematic diagram of Sori . 11 Figure 5 Example of site distribution for LTV measurement 12 Figure 6 LTV value of each site 12 Figure 7 Schemati

30、c of a DTA system . 22 Figure 8 Schematic of a dielectric constant measurement system 22 Figure 9 The Bond method . 24 Figure 10 Measurement method by X-ray . 24 Figure 11 Relationship between cut angle and lattice planes . 25 Figure 12 Measuring circuit 26 Figure 13 Resistance measuring equipment .

31、 26 Figure 14 Shape of electrode . 27 Figure A.1 Definition of Euler angles to rotate coordinate system (X, Y, Z) onto (321, xxx ) 29 Figure A.2 SAW wafer coordinate system 30 Figure A.3 Relationship between the crystal axes, Euler angles, and SAW orientation for some wafer orientations . 31 Figure

32、B.1 Czochralski crystal growth method 32 Figure B.2 Example of non-uniformity in crystals grown from different starting melt compositions . 34 Figure B.3 Schematic of a Vertical Bridgman furnace and example of temperature distribution 35 Figure B.4 Process flow-chart 36 Table 1 Description of wafer

33、orientations . 14 Table 2 Roughness, warp, TV5 and TTV specification limits 17 Table 3 Maximum number of etch channels in seed position 18 Table 4 Crystal planes to determine surface and OF orientations . 25 Table 5 Electrode size . 27 Table A.1 Selected SAW substrate orientations and corresponding

34、Euler angles . 30 BS EN 62276:2016IEC 62276:2016 IEC 2016 5 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SINGLE CRYSTAL WAFERS FOR SURFACE ACOUSTIC WAVE (SAW) DEVICE APPLICATIONS SPECIFICATIONS AND MEASURING METHODS FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organi

35、zation for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, I

36、EC publishes International Standards, Technical Specifications, Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt wi

37、th may participate in this preparatory work. International, governmental and non-governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for Standardization (ISO) in accordance with conditions determined by a

38、greement between the two organizations. 2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international consensus of opinion on the relevant subjects since each technical committee has representation from all interested IEC National Committees. 3) I

39、EC Publications have the form of recommendations for international use and are accepted by IEC National Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC Publications is accurate, IEC cannot be held responsible for the way in which they are u

40、sed or for any misinterpretation by any end user. 4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications transparently to the maximum extent possible in their national and regional publications. Any divergence between any IEC Publication and the

41、corresponding national or regional publication shall be clearly indicated in the latter. 5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible

42、 for any services carried out by independent certification bodies. 6) All users should ensure that they have the latest edition of this publication. 7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and members of its technical committee

43、s and IEC National Committees for any personal injury, property damage or other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC Publications.

44、8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is indispensable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent ri

45、ghts. IEC shall not be held responsible for identifying any or all such patent rights. International Standard IEC 62276 has been prepared by IEC technical committee 49: Piezoelectric, dielectric and electrostatic devices and associated materials for frequency control, selection and detection. This t

46、hird edition cancels and replaces the second edition of IEC 62276 published in 2012. It constitutes a technical revision. This edition includes the following significant technical changes with respect to the previous edition: Corrections of Euler angle indications in Table 1 and axis directions in F

47、igure 3. Definition of “twin“ is not explained clearly enough in 3.3.3. Therefore it is revised by a more detailed definition. Etch channels maximum number at quartz wafer of seed which do not pass through from surface to back surface are classified for three grades in 4.2.13 a). Users use seed port

48、ions of quartz wafers for devices. They request quartz wafers with less etch channels BS EN 62276:2016 6 IEC 62276:2016 IEC 2016 in seeds to reduce defects of devices. The classification of etch channels in seed may prompt a rise in quartz wafer quality. The text of this standard is based on the fol

49、lowing documents: CDV Report on voting 49/1144/CDV 49/1170/RVC Full information on the voting for the approval of this standard can be found in the report on voting indicated in the above table. This publication has been drafted in accordance with the ISO/IEC Directives, Part 2. The committee has decided that the contents of this publication will remain unchanged until the stability date indicated on the IEC website under “http:/webstore.iec.ch“ in the d