1、ETSI TR 102 151 V6.0.0 (2003-02) Technical Repor Smart Cards; Measurement of Electromagnetic Emission of SIM Cards; (Release 6) Release 6 2 ETSI TR 102 151 V6.0.0 (2003-02) Reference DTR/SCP-000286 Keywords EMC, smart card ETSI 650 Route des Lucioles F-O6921 Sophia Antipolis Cedex - FRANCE Tel.: +33
2、 4 92 94 42 O0 Fax: +33 4 93 65 47 16 Siret No 348 623 562 00017 - NAF 742 C Association but non lucratif enregistre la Sous-prfecture de Grasse (06) No 7803/88 Important notice Individual copies of the present document can be downloaded from: http:lwmv.etsi .arq The present document may be made ava
3、ilable in more than one electronic version or in print. In any case of existing or perceived difference in contents between such versions, the reference version is the Portable Document Format (PDF). In case of dispute, the reference shall be the printing on ETSI printers of the PDF version kept on
4、a specific network drive within ETSI Secretariat. Users of the present document should be aware that the document may be subject to revision or change of status. Information on the current status of this and other ETSI documents is available at ha p:/pa rta I. etsi I a rgltbistat uslstatus .as p If
5、you find errors in the present document, send your comment to: Cori vriaht Notifica tion No part may be reproduced except as authorized by written permission. The copyright and the foregoing restriction extend to reproduction in all media. O European Telecommunications Standards Institute 2003. All
6、rights reserved. DECTTM, PLUGTESTSTMand UMTSTMare Trade Marks of ETSI registered for the benefit of its Members. TIPHONTM and the TIPHON logo are Trade Marks currently being registered by ETSI for the benefit of its Members. 3GPPTM is a Trade Mark of ETSI registered for the benefit of its Members an
7、d of the 3GPP Organizational Partners. ETSI Release 6 3 ETSI TR 102 151 V6.0.0 (2003-02) Contents Intellectual Property Rights 4 Foreword . 4 Introduction 4 1 2 3 3.1 3.2 4 4.1 4.2 4.3 5 5.1 5.2 Scope 5 References 5 Definitions and abbreviations . 5 Definitions . . 5 Abbreviations . 5 Description of
8、 the SET Boards . 6 Schematic of the Mobile-specific Network . . 7 Description of the TEM cell . 7 Measurements . 8 List of test fiequency . . 8 Measurement pro cedure . . 8 Measurement Equipment 6 Annex A: Sample EM Measurements 10 A.l Global Setup . 10 A.2 System dependencies 11 A.3 Influences oft
9、he measurement equipment . 12 A.4 Influence of board orientation 13 A.5 Influence of Clock Shape . 14 A.6 Influence of the operation mode . 17 A.7 Influence ofthe chip hardware . 21 A.7.1 SLE 66 C 162 P . 21 A.7.2 SLE 66 CX 320 P . 24 A.8 Radiation in Bands 2 and 3 . 28 A.8.1 Band2 . A.8.2 Band3 . A
10、.9 Influence of the Mobile-specific Network . 32 A.10 Influence of Readers . 33 . Annex B: Change his tory 34 History 35 ETSI Release 6 4 ETSI TR 102 151 V6.0.0 (2003-02) Intellectual Property Rights IPRs essential or potentially essential to the present document may have been declared to ETSI. The
11、information pertaining to these essential IPRs, if any, is publicly available for ETSI members and non-members, and can be found in ETSI SR O00 314: “Intellectual Property Rights (7PRs); Essential, orpotentially Essential, IPRs notlJied to ETSI in respect ofETSI standards“, which is available from t
12、he ETSI Secretariat. Latest updates are available on the ETSI Web server (5). All published ETSI deliverables shall include information which directs the reader to the above source of information. Foreword This Technical Report (TR) has been produced by ETSI Project Smart Card Platform (SCP). The co
13、ntents of the present document are subject to continuing work within EP SCP and may change following formal EP SCP approval. If EP SCP modifies the contents of the present document, it will then be republished by ETSI with an identiSling change of release date and an increase in version number as fo
14、llows: Version x.y.z where: x the fiist digit: O early working draft; 1 2 3 the second digit is incremented for all changes of substance, i.e. technical enhancements, corrections, updates, etc. the third digit is incremented when editorial only changes have been incorporated in the document. present
15、ed to EP SCP for information; presented to EP SCP for approval; or greater indicates EP SCP approved document under change control. y z Introd U ction ETSI Project Smart Card Platform (SCP) identified potential problems between mobile equipments and SIMLJICC due to electromagnetic interferences. To
16、allow the analysis of such potential problems it is necessary to define a common reproducible measurement procedure. This allows the comparison of different EMC measurements The aim of this report is the definition of a standard hardware equipment for EM measurements of smart cards and a common EM m
17、easurement procedure. Further EM measurements are described in the appendix of this report from already existing smart cards used for SIM. ETSI Release 6 5 ETSI TR 102 151 V6.0.0 (2003-02) 1 Scope The present document describes: a reference test board and TEM cell for EM measurements of smart cards;
18、 EM measurement procedures for smart card using the reference test board and TEM cell; Sample EM measurements of already existing smart cards. 2 Re fe re nces For the purposes of this Technical Report (TR), the following references apply: il ISO/IEC 78 16-3 : “Information technology - Identification
19、 cards - Integrated circuit(s) cards with contacts - Part 3: Electronic signals and transmission protocols“. ETSI TS 102 221 : “Smart cards; UICC-Terminal interface; Physical and logical characteristics“. IS0 11452-3: “Road vehicles - Component test methods for electrical disturbances from narrowban
20、d radiated electromagnetic energy - Part 3 : Transverse electromagnetic mode (TEM) cell“. 21 31 3 Definitions and abbreviations 3.1 De fi nit ions For the purposes of the present document, the following terms and definitions apply: Answer To Reset (ATR): string of characters sent by the card followi
21、ng a reset sequence card: the smart card, SIM or UICC clock the clock provided by the terminal to the card external clock (e.c.): which has a sinusoidal shape onboard clock (o.c.): which has a rectangular shape reader: the hardware used to connect the card to the terminal printed circuit board TC: m
22、etal box used for the measurements terminal: the handset, ME or UE Transparent Reader (TR): the terminal used to communicate with the SIM card 3.2 Abbreviations For the purposes of the present document, the following abbreviations apply: ATR Answer To Reset ATT ATTenuation CLK e.c. external clock 11
23、0 NL Noise Level CLOCK signal provided by the terminal to the card bi-directional communication line between the terminal and the card ETSI Release 6 6 ETSI TR 102 151 V6.0.0 (2003-02) O.C. PCB RBW RST SA SNR TR SET onboard clock, which has a rectangular shape Printed Circuit Board Resolution Band W
24、idth ReSeT signal provided by the terminal Spectrum Analyser Signal to Noise Ratio Transparent Reader SIM card EMV Test 4 Measurement Equipment For the EMC measurements the following measurement equipment is needed: SET Board: SIM EMC Test board; There are different variations of SET boards availabl
25、e that are described below. TEM cell: The needed TEM cell is described below. Spectrum analyser that allows the measurements within the different test frequency bands. Clock generator to provide the external clock for the SIM. 4.1 Description of the SET Boards The reference SET board is developed wi
26、th the following features: Power control. Special types of plugs for power supply, signal measurements and communication. Special filters for reduction of external radiation (p-type filters). 6-layer board symmetrical stack up, TEM cell ground only penetrated by signal vias. Mobile-specific network
27、inside and outside the TEM cell. Different boards with different type of readers. Figure 4.1: Schematic description of the SET board ETSI Release 6 7 ETSI TR 102 151 V6.0.0 (2003-02) There are SET boards with different plug-in card readers available. Also the mobile network could be optionally place
28、d outside of the TEM cell. These variation of SET-boards allows the choice of the optimum test condition for a specific problem case. The following four SET-board versions were used for the generation of the present document: Version 1 with Amphenol, No. C707 10 M 006 0012 plug-in reader (6 leads on
29、 one side) and mobile network outside of TEM cell. Version 2 with Amphenol, No. C707 10 M 006 0492 plug-in reader (three leads on each side) and mobile network outside of TEM cell. Version 3 with Amphenol, No. C707 10 M 006 0972 plug-in reader (small version) and mobile network outside of TEM cell.
30、Version 4 with Amphenol, No. C707 10 M 006 0492 plug-in reader (three leads on each side) and mobile network inside of TEM cell. The SET-board can be used in four different operation modes: Stand Alone Mode: The card needs only power, reset and clock after the program is started and runs in an endle
31、ss loop. There is a choice between an onboard clock (rectangular) and external clock (sinusoidal). An onboard reset control is implemented. Communication Mode via electrical link: Full communication with a TR. Communication Mode via fibre optics: Full communication with a TR. Conducted emission: Plu
32、gs for measurements are on board. 4.2 Schematic of the Mobile-specific Network Figure 4.2 shows the mobile specific decoupling network on the SET-board that is either located inside or outside the TEM cell. Figure 4.2: Description of the mobile specific network 4.3 Description of the TEM cell For mo
33、unting the SET board at the TEM cell, a TEM cell from Fischer Custom Communication Inc. Model Nr. FCC - TEM- JM3 for the usage up to 2 O00 MHz (U.S. Patent Nr. 543 66 03) is used. ETSI Release 6 8 ETSI TR 102 151 V6.0.0 (2003-02) Figure 4.3 shows the TEM cell with the SET board. SET board n 50. -Ohm
34、 :oaxial cable Figure 4.3: Schematic description of the TEM cell The SET board can be mounted in four different orientations at the TEM cell: O“ (12 h). 90“ (3 h). 180“ (6 h). 270“ (9 h). 5 5.1 Measurements List of test frequency The following test frequency bands are recommended for the EMC measure
35、ments: Band 1 (Low frequency): 1 MHz to 100 MHz. Band 2 (GSM, EGSM): 800 MHz to 1 O00 MHz. Band 3 (PCN1800, PCN1900, UMTS): 1 700 MHz to 2 200 MHz. 5.2 Measurement procedure To allow a correct analysis of the measurement result the following influence have to be checked before analysis of the measur
36、ements: System dependencies: Therefore the spectrum analyser shall perform measurement with a reference resistance of 50 Q within the test frequency bands. Typically at each individual spectrum analyser some significant peaks above noise level will occur that should be filtered out for the analysis
37、of the measurements. Influence of the measurement equipment: Therefore the spectrum analyser shall perform measurements with a connected SET board mounted at the TEM cell. The SET board shall not be connected to any other electrical signals (Power, clock or I/O) during the measurements. After the me
38、asurements it has to be verified if the measurement equipment has a significant influence on the measurement results. Influence of the board orientation: Therefore measurement with identical conditions (Same clock, power, SIM, operation mode .) shall be performed with different orientated SET board
39、at the TEM cell. For this measurement it is recommended to use test conditions where a high EM radiation is expected. After the analysis of these measurements it is recommended to use the orientation with the highest EM radiation results (worst case). ETSI Release 6 9 ETSI TR 102 151 V6.0.0 (2003-02
40、) Influence of external clock: Therefore measurements with a not powered smart card shall be performed with different clock shapes to measure the spectrum of the external clock signal. If the smart card hardware can be driven by a sine signal, then it is recommended to use this clock shape to reduce
41、 the emitted spectrum of the external clock signal. The spectrum of the clock signal have to filtered out for the analysis of the EM measurement result s. To analyse generally the EM radiation of smart cards the following analysis are recommended: Influence of operation mode: Therefore measurements
42、shall be performed with different operation modes of the SIM (stand-by mode, normal CPU calculations, cryptographic calculations, I/O transfer mode .). Influence of different SIM chip hardware: Therefore measurements with different SIM chip hardware shall be performed. Influence of mobile decoupling
43、 network: Therefore measurements under the same test conditions with the mobile network inside and outside the TEM cell shall be performed by exchanging the SET boards. Influence of plug-in reader: Therefore measurements under the same test conditions with different plug-in reader shall be performed
44、 by exchanging the SET boards. ETSI Release 6 10 ETSI TR 102 151 V6.0.0 (2003-02) Annex A: Sample EM Measurements A.l Global Setup For the measurements shown in this annex the following conditions were used: VDD external = 5 V. External clock frequency = 3.57. Global RBW = 10 kHz. Measurements in dB
45、pV. The following test cards were used: C#l: SLE 88 CX 720 P, Infineon with 27 MHz internal clock. C#2: SLE 66 CX 320 P, Infineon with max 12 MHz internal clock. C#3: SLE 66 C 162 P, Infimeon with max 12 MHz internal clock. The following measurement equipment was used: FSP spectrum analyser 9 kHz to
46、 7 GHz from Rhode Philips, PM 5 193. SET boards as described in the present document. TEM cell as described in the present document. ETSI Release 6 11 ETSI TR 102 151 V6.0.0 (2003-02) A.2 System dependencies settings FSP Acquisition Max Hold, Maxpeak, OdB An Filtertype FFT, Resolutionbandwidth 100Hr
47、 Sweeptime 80s. Sweepcount 1 5 O -5 U/d Bu V -10 -15 -20 MikrwTEM-Cell, DC 2GHr. FCC Spectrumanalysator FSP. Rhode this mode was used as the reference mode. CPU: There is a high level of activity in the CPU. ACE: Asymmetric cryptographic execution mode. ETSI Release 6 21 ETSI TR 102 151 V6.0.0 (2003
48、-02) DES: There is a high level of activity in the DES module and in the chip crypto coprocessor. NVM: There is a high level of activity in the NVM (non-volatile memory) programming and reading. UO: There is a high level of activity on the I/O pin; the chip is permanently sending a byte stream. Four
49、 frequencies have been set to -20 dBpV (here for the first time) according to the system dependencies. The sleep mode has no significant peaks, only the clock (3.57 MHz) can be seen with 30 dB above NL. This sine wave is clean, there are no harmonics. The I/O mode has the highest peaks. In this mode a second pin is permanently active. The other modes show no major differences. No radiation to be seen above 100 MHz. Conclusion: There is some radiation in the range under 100 MHz up to 25 dB (6 peaks), the clock shows 30 dB. A.7 A.7.1 Influence of the chip hardware SLE 66 C 162 P Sett
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