JEDEC EIA-318-B-1996 Measurement of Reverse Recovery Time for Semiconductor Signal Diodes《半导体信号二极管的反向恢复时间测量》.pdf

1、m s3 0 I m I W EIA-318-B EIA 318-B 96 3234600 0574461 T9T 1 (Rcvisiun of EM-318-A and Inclusion of EU-318-1) ANSI/ IA-318- 6-1996 Approved: May 7, 1996 I EIA STANDARD Measurement of Reverse Recovery Time for Semiconductor Signal Diodes JULY 1996 ELECTRONIC INDUSTRIES ASSOCIATION ENGINEERING DEPARTME

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6、ission activity has not progressed to the point where a valid comparison between the EIA Standard and the IEC document can be made. This Standard does not purport to address all safety problems associated with its use or all applicable regulatory requirements. It is the responsibility of the user of

7、 this Standard to establish appropriate safety and health practices and to determine the applicability of regulatory limitations before its use. (From Standards Proposal No. 2435-B, formulated under the cognizance of the JC-22.4 Committee on Signal and Regulator Diodes.) Published by ELECTRONIC INDU

8、STRIES ASSOCIATION 1996 Engineering Department 2500 Wilson Boulevard Arlington, VA 22201 PRICE: Please refer to the current Catalog of EIA, JEDEC, and TIA STANDARDS and ENGINEERING PUBLICATIONS or call Global Engineering Documents, USA and Canada (1 -800-854-71 79) International (303-397-7956) Ali r

9、ights reserved Printed in U.S.A. EIA 318-B b 3234b00 05744b4 7T EIA-3 18-B MEASUREMENT OF REVERSE RECOVERY TIME FOR SEMICONDUCTOR SIGNAL DIODES CONTENTS 1 Scope 2 Discussion 3 Equivalent circuit 4 MethodA 4.1 Discussion 4.2 Operation 4.3 Reverse current (iRwC) 5 Method B 5.1 Discussion 5.2 Operation

10、 6 Procedures and precautions 6.1 Procedures 6.2 Precautions Annex A 1 1 2 2 2 3 3 5 5 6 8 8 11 13 -1- EIA 318-8 96 W 3234600 0574465 635 EIA-3 18-B -11- EIA 318-6 96 3234600 0574466 571 EIA-3 18-B Page 1 MEASUREMENT OF REVERSE RECOVERY TIME FOR SEMICONDUCTOR SIGNAL DIODES 1 Scope This standard desc

11、ribes the measurement of signal diode (IF 5500 mA dc) reverse recovery times of less than 300 ns duration. It may, however, also be used for the measurement of longer recovery times. This standard is also intended to establish a method by which to characterize the test fixture used for this measurem

12、ent. 2 Discussion This EIA Recommended Standard describes two measuring techniques for determining the reverse recovery times of high speed signal diodes. The principal difference between the two methods is the manner in which the pulse generator waveform is introduced in the circuit. Method A emplo

13、ys a circuit in which the forward current is on for a long period. Method A is also limited to cases where the specified variation in VF from one diode to the next is insignificant with respect to the specified V, (see page 3). In Method B, the technique is to have forward current on for a short per

14、iod and off for a relatively long period. Method B may be properly specified for all types of diodes, but must be used where heating effects due to the larger forward currents generally employed can introduce error in measurement. The test fixture used to measure high speed diodes must be carefiilly

15、 constructed so that the effects of the fixture do not subdue the phenomena of reverse recovery. In general, this aim is achieved when the test fixture and diode under test, viewed as a transmission element, resemble a high quality transmission line. The determination of a suitable test fixture for

16、a particular reverse recovery test level depends upon the speed of the diode. The bandpass and fidelity of the complete system must be capable of applying and presenting the waveform to the accuracy required. It is also the purpose of this method to establish the necessary requirements for the test

17、fixture. The techniques and limitations may be applied, however, to the other elements of the equipment. The pulse performance method that is to be used, is characterized by its simplicity, low cost and the speed with which a determination is made, - EIA 318-B 96 W 3234600 0574467 408 W EM-3 18-B Pa

18、ge 2 3 Equivalent circuit Both Methods A and B may be represented by a Thevenins equivalent circuit consisting of a generator, the generator resistance, the diode under test, and a resistive load as shown in figure 1 Figure 1 - Equivalent circuit Referring to figure 1, it can be seen that the on and

19、 off and transient conditions are uniquely defined by specifymg of the following: VG(0N) or I,(ON), VG(OFF), and and it is not recommended that this technique be used for other than the qualitative investigation of diodes with recovery times less than ten times the rise time of the oscilloscope bein

20、g used. An example of oscilloscope rise time effect is illustrated in figure 7 where the observed trace of the device behavior is depicted as a dashed line, whereas the solid line is a better representation of the actual diode reverse characteristics when scope rise time effects are removed. 3) RF c

21、ircuit techniques should be used for test fixture layout. 4) Test Fixture Precautions Most test fixtures inherently exhibit a certain amount of ringing. The magnitude of this ringing must be held to a minimum consistent with good engineering practice if readings to the desired degree of accuracy are

22、 to be obtained. This is particularly important when measurements involving low recovery current are to be made. 5) The input pulse transition time and the detector response time shall be such that doubling these time values will not affect the required precision of measurement. 6) It is recommended that values for I, in both Methods A and B should be equal to 1,2 or 5 x 10“ mA, where n is an integer. EIA 3L-B 96 3234600 0574479 12T b 1 I VISIBLE TRACE I- EIA-3 18-B Page 14 Figure 7 - Diode current and oscilloscope response EIA 318-B Yb m 3234600 0574480 941