JEDEC JESD10-1976 Low Frequency Power Transistors《低频功率晶体管》.pdf

1、- e EIA JESDLO 76 3234600 0004573 I -. . . _. . -._. z . .- JANUARY 1976 -. (Reaffirmed September, 1981) - Gv : 5. EIA JESDLO 76 = 3234600 0004574 3 m . NOTICE CI This JEDEC Standard contains material which has been prepared and progres- sively reviewed and approved through the JEDEC Council level a

2、nd subsequently ., reviewed and approved by the EIA General Counsel. JEDEC Standards are designed to serve the public interest through eliminating misunderstandings between manufacturers and purchasers, facilitating inter- changeability and improvement of products, and assisting the purchaser in sel

3、ecting and-obtaining-.with-minimum delay the proper product Tor his particular I . need. Existence of such standards shall not in any respect preclude any member : or non-member of JEDEC from manufacturing or selling products not conforming . ta such- standards, nor shall the existence of such stand

4、ards preclude their 7 voluntary use by those other than EIA members whether the standard is-to be used either domestically or internationally. Recommended seandards .are adopted by JEDEC without regard to whether or not their adoption may involve patents or articles, materials, or processes. By such

5、 action JEDEC does not assume any liability to any patent owner, nor does it assume any obligation whatever to parties adopting the recommended standards. The information included in JEDEC Standards represents a sound approaci to product specificaeion and application, principally from the solid stat

6、e device manufvturer viewpoint: Within the JEDEC organization there are procedres whereby a JEDEC Sta rd may be further processed and ultimately become an EIA Standard. Inquiries, comments, and suggestions relative to the content of this- JEDEC Standard should be addressed- to the JEDEC Executive- S

7、ecretary at the EIA Headquarters. ._ r. . -. . e. - = - : . 1. . -JEDEC Electronic Industries Association . 2001 Eye Street N.W. . Washington, D.C. Engineering Department 2001 Eye Street, N.W. . PRICE: $20.30 i,._ however, are some special letter While the primary source for this listing is JEDEC Pu

8、blication No. 77-A, the Descriptive information concerning letter symbols used are abbreviated and added a Multiple terminals connected to electrodes of the same type, such as the bases of a Darlington device, are identified by adding a number following and in line with each terminal designation in

9、accordance with terminal numbering in EIA Standard RS-321B. number 1. For example, VEB1 is the voltage between the emitter and base terminal 1.2 TERMS AND DEFINITIONS Term base (B, b)* . , . . . . . . . breakdown. . . , . . . . . . A region which lies between an emitter and collector of a transistor

10、 and into which min- ority carriers are injected. (Ref. 60 IRE 28.S1) A phenomenon occurring in a reverse-biased semiconductor junction, the initiation of which is observed as a transition from a region of high small-signal resistance to a region of substantially lower small-signal resistance or an

11、increasing magnitude of reverse current. (Ref. RS-282 par. 1,38). 5 EIA JESDLO b m 3234600 0004583 4 m t f Term Definit ion breakdown region . . . . . . . A region of the volt-ampere character- istic beyond the initiation of break- dQwn for an increasing magnitude of reverse current, (Ref RS-282 par

12、. 1.37). breakdown voltage. . . . . . . , The voltage measured at a specified current in a breakdown region. MIL-S-19500D Par. 20.3). (Ref collector (C, c)*. . . . . . . . A region through which a primary flow of charge carriers leaves the base. (Ref. 60 IRE 28.S1). electrode . . . . . . . , . , . A

13、n electrical and mechanical contact to a region of a semiconductor device. (Ref, RS-282 par. 1.06). emitter (E, e)* . . . . . . . . A region from which charge carriers that are minority carriers in the base are injected into the base. (Ref. 60 IRE 28.S1). junction, collector. . . . . . A semiconduct

14、or junction normally biased in the high-resistance direction, the current through which can be controlled by the introduction of minority carriers into the base. (Ref, 60 IRE 28.S1). A semiconductor junction normally biased in the low-resistance direction to inject minority carriers into the base. (

15、Ref. 60 IRE 28.S1). A circuit in which halving the magni- tude of the terminating impedance does not produce a change in the parameter being measured greater than the required accuracy of the measurement. (Ref MIL-S-19500D par. 20.8). junction., emitter . . , , , . . open-circuit , . , . . . . , . r

16、everse current. . .I , . , . . . The current that flows through a semi- conductor junction in the reverse direction. *NOTE: Reference to base, collector, emitter symbolism (B, b, C, c, E, c) refers to the device terminals connected to those regions. 6 e E EIA JESDLO 76 3234600 0004584 b W reverse di

17、rection . . . . . . The direction of higher resistance to steady direct-current flow through a semiconductor junction. (Ref. RS-282 par. 1.20). saturation . . . . . . , . . . A base-current and a collector-current condition resulting in a forward-biased collector junction. Ref. JEDEC Publ. 77-A, p.

18、Dl,) second breakdown . e . . . . . . A condition of the transistor, resulting from a lateral current instability, in which the electrical characteristics are determined principally by the spread- ing resistance of a thermally maintained current constriction, The initiation of second breakdown is ob

19、served as a decrease in the voltage sustained by the collector. JC-25 NOTE: Sekond breakdown differ-s from thermal failure in that its initi- ation can not be predicted from low voltage thermal resistance measurements. Unless the current and duration in second breakdown are limited the high junction

20、 temperature at the current constriction will result in failure, usually as a collector-to-emitter short-circuit. Second breakdown can occur at positive, negative, or zero base current. - semiconductor device . . , . . A device whose essential characteris- tics are due to the flow of charge carriers

21、 within a semiconductor. (Ref. RS-282 par. 1.09). semiconductor junction . , . . . A region of transition between semi- (commonly referred to as conductor regions of different electri- j unction) cal properties (e.g., n-n+, p-n, P-P+ 1.0). short-circuit. . . . . , . A circuit in which doubling the m

22、agni- tude of the terminating impedance does not produce a change in the parameter being measured that is greater than the required accuracy of the measurement. (Ref. MIL-S-19500D par. 20.16) . ! semiconductors) or between a metal and a semiconductor. (Ref. RS-282 par. EIA JESDLO 7b W 3234b00 000458

23、5 8 W small-signal . . . . . . . . A signal which when doubled in magni- tude does not produce a change in the parameter being measured that is greater than the required accuracy of the measurement. (Ref. MIL-S-19500D par. 20.17). static value . . . . . . . . . . A non-varying value or quantity of m

24、easurement at a specified fixed point, or the slope of the line from the origin to the operating point on the appropriate characteristic curve. (Ref. IEEE #255 par. 2.2.1). terminal . . . . . . . . . . . An externally available point of connec- tion to one or more electrodes. RS-282 par. 1.14). (Ref

25、. thermal resistance . . . . The temperature difference between two specified points or regions divided by the power dissipation under conditions of thermal equilibrium. (Ref. IEEE #223). (steady- s t ate) transient thermal . . . . . . . The change of temperature difference impedance between two spe

26、cified points or regions at the end of a time interval divided by the step function change in power dissipation at the beginning of the same time interval causing the change of temperature difference. (Ref. IEEE #223). transistor . . . . . . . . . . . An active semiconductor device capable of provid

27、ing power amplification and having three or more terminals. (Ref. IEC #147-O par. 0-2.8). transistor, junction, , . . . . A transistor having a base and two or multijunction type more junctions. Graphic symbols for emitter, base, collec- tor transistors: (Ref. ANSIY32.2). NOTE: In the graphic symbol

28、s, the envelope is optional if no element is connected to the envelope. 8 I emitter enitt5-r b ,. EIA JESDLO 76 m 3234600 O004586 T m I) 1.3 LETTER SYMBOLS, TERMS AND DEFINITIONS SymboZ iba ?ob0 ?hfe fT GPE h hfe hIE hie Term open-circuit input capacitance open-circuit output capacitance small-signa

29、l short- circuit forward current transfer ratio cutoff frequency (common-emitter) transition frequency or frequency at which small-signal forward current transfer ratio (common-emitter) extrapolates to unity large-signal insertion power gain (common- emitter) static forward cur- rent transfer ratio

30、(common-emitter) small-signal short- circuit forward current transfer ratio (common emitter) static input resist- ance (common- emi t t er) small -signal short- circuit input impedance (common-emitter) Definition The capacitance measured across the input terminals (emitter and base) with the. collec

31、tor open-circuited for ac. (Ref. IEEE #255). The capacitance measured across the out- put terminals Ccollector and base) with the input open-circuited to ac. Ref. IEEE #255). The lowest frequency at which the magni-? tude of the small-signal short-circuit forward current transfer ratio is 0.707 of i

32、ts value at a specified low fre- quency (usually 1 kHz or less). (Ref. IEEE #255). The product of the modulus (magnitude of the common-emitter small-signal short- .circuit forward current transfer ratio, hfe 3 and the frequency of measurement when this frequency is sufficiently high so that the modu

33、lus (magnitude) of hfe is decreasing with a slope of approxi- mately 6 dB per octave. (Ref. IEEE #255). The ratio, usually expressed in dB, of the signal power delivered to the load to the large-signal power delivered to the input. The ratio of the dc collector current to the dc base current. (Ref.

34、MIL-S-19500D par. 30.28). The ratio of the ac collector current to the small-signal ac base current with the collector short-circuited to the emitter for ac. (Ref. MIL-S-19500D par. 30.20). The ratio of the dc base-emitter voltage to the dc base current. (Ref. MIL-S- 19500D par. 30.29). The ratio of

35、 the small-signal ac base- emitter voltage to the ac base current with the collector short-circuited to the emitter for ac. (Ref. MIL-S-19500D par. 30.24). 9 EIA JESDLO 76 = 3234b00 0004587 I t 1 Symbo i! Term Im(hie) imaginary part of the small-signal short- circuit input imped- ance, (common-emitt

36、er) Re (hie) real part of the small- signal short-circuit input impedance, (common-emitter) hoe small-signal open- circuit output admittance, . (common-emitter) imaginary part of the small-signal open- circuit output admit- tance , (common-emitter) ImChoe) Re ChoeJ real part of the small- signal ope

37、n-circuit output admittance, (common- emi t ter) IB, IC, IE b IC e B C E i i i current, dc (base- terminal, collector- terminal, emitter- termina 1 ) current, rms value of alternating component (bace-terminal, collector-terminal, emitter- terminal) current, instantan- eous total value (base- t ermin

38、al , collector-terminal, emitter-terminal) The ratio of the out-ofhfhase (imaginary) component of the small-signal ac base,- emitter voltage to the ac base current with the collector terminal short-circuited to the emitter terminal for ac. The ratio of the in-phase (real) com- ponent of the small-si

39、gnal ac base- emitter voltage to the ac base current with the collector terminal short- circuited to the emitter terminal for ac. The ratio of the ac collector current to the small-signal ac collector-emitter voltage with the base terminal open- circuited to the emitter for ac. (Ref. MIL-S-19500D pa

40、r. 30.15). The ratio of the ac collector current to the out-of-phase (imaginary) component of the small-signal collector-emitter voltage and with the base terminal open- circuited to the emitter for ac. The ratio of the ac collector current to the in-phase (real) component of the small-signal collec

41、tor-emitter voltage and with the base-terminal open-circuited to the emitter for ac. The value of the dc current into the terminal indicated by the subscript. The root-mean-square value of alter- nating current into the terminal indicated by the subscript. The instantaneous total value of alternatin

42、g current into the terminal indicated by the subscript. 10 EIA JESDLO 7b = 3234600 0004588 3 o I) DIAGRAM ILLUSTRATING FOREGOING CURRENTS (Ref IEEE #255) Icrn MAXIMUM (PEAK) VALUE OF ALTERNATING CDMPONENT- NO ALTERNATING -q. WITH ALTERNATING COMPONENT COMPONENT ICBO CEO INSTANTANEOUS VALUE OF ALTERN

43、ATING COMPONENT SymboZ T instantan- eous total (to the base, common-emitter) emitter circuit configuration. The product of the instantaneous input current and voltage with the common- PBE large-signal output power (common-emitter) The product of the large-signal ac out- put current and voltage with

44、the common- emitter circuit configuration. The sum of the products of the dc input OE total nonreactive power input to all currents and voltages, i.e. terminals . PT IB + VcE IC or BE BE E + CB PT Q nonreactive power input, instanteous total, to all terminals The sum of the products of the instan- t

45、aneous input currents and voltages. quality factor 2a times the ratio of the maximum stored energy to the energy dissipated per cycle at a given frequency. Note: The Q of an inductor at a frequency is the mag- nitude of the ratio of its reactance to its effective series resistance at that frequency.

46、 (IEEE std. 100-1972). r C co 1 1 ect or- bas e time constant bc thermal resistance Re (formerly O) The product of the intrinsic base resistance and collector capacitance under specified small-signal conditions. Refer to thermal resistance (steady state) in 1.2. thermal resistance; The thermal resis

47、 tance (s teady-s t ate) case-to-ambient from the device case to the ambient. ROCA thermal resistance, The thermal resistance (s teady-state) R junction-to-ambient from the semiconductor junction(s) to the ambient. (formerly 0.J-A) * c EIA JESDLO 7b 3234b00 O004590 L Symbol thermal resistance, junct

48、on-to-case . ROJC (former 1 y 0J-C) thermal resistance, junction-to-mounting surface R TA ambient temperature or freebair temperature * case temperature TC junction temperature TJ T storage temperature stg delay time td tf toff ton t P fall time - -i turn-off tim$ turn-on time pulse time The thermal

49、 resistance (steady-state) from the semiconductor junction(s) to a statedlocation on the case. The thermal resistance (steady-state) from the semiconductor junction(s) to a stated location on the mounting sur- face. The air temperature measured below a device, in an environment of substan- tially uniform temperature, co0Xe.d- only by natural air convection and not materially affected by reflective and radiant surfaces. (Ref, MIL-S-19500D par. 20.20.1) The temperature measured at a specified location on the case of a device; (Ref. MIL-S-19500D par. 20