JEDEC JESD210-2007 Avalanche Breakdown Diode (ABD) Transient Voltage Suppressors.pdf

1、JEDEC STANDARD Avalanche Breakdown Diode (ABD) Transient Voltage Suppressors JESD210 DECEMBER 2007 JEDEC SOLID STATE TECHNOLOGY ASSOCIATION NOTICE JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Board of Directors level and subsequen

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8、 Catalog of JEDEC Engineering Standards and Publications online at http:/www.jedec.org/Catalog/catalog.cfm Printed in the U.S.A. All rights reserved PLEASE! DONT VIOLATE THE LAW! This document is copyrighted by JEDEC and may not be reproduced without permission. Organizations may obtain permission t

9、o reproduce a limited number of copies through entering into a license agreement. For information, contact: JEDEC Solid State Technology Association 2500 Wilson Boulevard Arlington, Virginia 22201-3834 or call (703) 907-7559 JEDEC Standard No. 210 -i- AVALANCHE BREAKDOWN DIODE (ABD) TRANSIENT VOLTAG

10、E SUPPRESSORS Contents Page Introduction i 1 Scope 1 2 Terms and definitions 1 2.1 Basic concepts 1 2.2 Classes of avalanche breakdown diodes (ABD) 2 2.3 Avalanche breakdown diode (ABD) specification concepts 5 2.3.1 Specification concepts for all ABD types 5 2.3.2 Thermal specification concepts for

11、 all ABD types 8 2.3.3 Additional specification concepts for unidirectional-conducting ABD devices 9 2.3.4 Additional specification concepts for low-capacitance ABD devices 9 2.3.5 Additional specification concepts for ABD arrays 10 2.3.6 Additional specification concepts for unidirectional-blocking

12、 ABD devices 10 3 Rating verification tests 10 3.1 Rated random recurring peak impulse power dissipation (PPPSM) 10 3.2 Rated average power dissipation (PM(AV) 11 3.3 Rated random recurring peak impulse current (IPPSM) 12 3.4 Rated forward surge current (IFSM) 12 3.5 Rated working standoff voltage (

13、VWM) 13 4 Characteristic Tests 13 4.1 Breakdown (avalanche) voltage (V(BR) 13 4.2 Standby current (ID) or blocking leakage current (IIB) 14 4.3 Clamping voltage (VC) 15 4.4 Forward surge voltage (VFS) 16 4.5 Capacitance (C or CJ) 17 4.6 Temperature coefficient of breakdown voltage (V(BR) 18 4.7 Ther

14、mal impedance (ZJAor ZthJA, ZJCor ZthJC, ZJLor ZthJL) 19 4.8 Thermal resistance (RJAor RthJA; RJCor RthJC; RJLor RthJL) 24 4.9 Peak ESD limiting voltage (VP) or clamping voltage (VCor VCF) 24 4.10 Crosstalk voltage (VCT) 25 4.11 Signal line balance 26 4.12 Simultaneous surge 29 4.13 Peak overshoot v

15、oltage (VOS) 31 JEDEC Standard No. 210 -ii- Introduction Avalanche breakdown diodes (ABDs) described in this document are used as surge protectors by limiting or clamping transient overvoltages and diverting surge currents away from the circuits they are intended to protect. ABDs exhibit relatively

16、high impedance at normal system voltages. They limit transient overvoltages by providing a low impedance to conduct the surge current. These devices may offer either unidirectional or bidirectional protection. ABDs are commonly used in power and communications circuits. Avalanche breakdown diodes ar

17、e similar to regulator (i.e., Zener) diodes, except that they are designed for short-duration overvoltage protection identified as random recurring transients where cooling occurs before repeating, rather than continuous voltage regulation. They may be single two-lead devices or may have multiple (j

18、unctions) devices in a single package. JEDEC Standard No. 210 Page 1 AVALANCHE BREAKDOWN DIODE (ABD) TRANSIENT VOLTAGE SUPPRESSORS (Device Definitions, Rating Verification Tests, and Characteristic Testing) (From JEDEC BoD Ballot JCB-04-55, formulated under the cognizance of the JC-22.5 Subcommittee

19、 on Transient Voltage Suppressors.) 1 Scope This standard is applicable to avalanche breakdown diodes when used as a surge protector or transient voltage suppressor (TVS). It describes terms and definitions and explains methods for verifying device ratings and measuring device characteristics. This

20、standard may be applied to other surge-protection components with similar characteristics as the ABD. 2 Terms and definitions These may use terms similar to other regulator devices such as Zener diodes but have variations unique to ABDs. 2.1 Basic concepts 2.1.1 avalanche breakdown diode (ABD): A tr

21、ansient voltage suppressor that is a semiconductor diode with a single p-n junction (or with multiple p-n junctions none of which interact) whose operation depends in part on its breakdown characteristics. 2.1.2 stand-off (nonconducting) region: The portion of the voltage-current characteristic of a

22、 reverse-biased p-n junction that exhibits a high resistance to the passage of current. 2.1.3 breakdown region: The portion of the voltage-current characteristic beyond the initiation of breakdown for an increasing magnitude of reverse current. 2.1.4 forward-conducting region (of a unidirectional AB

23、D): The portion of the voltage-current characteristic of a unidirectional ABD forward-biased p-n junction that exhibits a low small-signal resistance to the passage of current. 2.1.5 anode terminal (A, a): The terminal connected to the p-type region of the p-n junction or, when two or more p-n junct

24、ions are connected in series with the same polarity, to the extreme p-type region. NOTE For unidirectional blocking or low-capacitance ABDs, any rectifier diode(s) that may be included are ignored in the determination of the anode terminal. JEDEC Standard No. 210 Page 2 2 Terms and definitions (cont

25、d) 2.1.6 cathode terminal (K, k): The terminal connected to the n-type region of the p-n junction or, when two or more p-n junctions are connected in series with the same polarity, to the extreme n-type region. NOTE For unidirectional blocking or low-capacitance ABDs, any rectifier diode(s) that may

26、 be included are ignored in the determination of the cathode terminal. 2.2 Classes of avalanche breakdown diodes (ABDs) 2.2.1 unidirectional ABD: A two-terminal ABD with a voltage-current avalanche breakdown characteristic in one direction and either a forward or a blocking characteristic in the oth

27、er. (See Figures 1a and 1b.) NOTE Large transient currents will be clamped for positive cathode-to-anode voltages when driven into the avalanche breakdown region with one or more p-n junctions placed in series or parallel with each junction connected in the same direction. Large transient currents m

28、ay also be clamped for negative cathode-to-anode voltages at significantly lower voltages with the typical forward-conducting characteristics of a single p-n junction (or of multiple p-n junctions connected in the same direction). The most common type of unidirectional ABD has a forward-conducting c

29、haracteristic. -VKA+VKA-I+I-VKA+VKA-I+IFigure 1a Unidirectional-conducting ABD Figure 1b Unidirectional-blocking ABD JEDEC Standard No. 210 Page 3 2.2 Classes of avalanche breakdown diodes (ABDs) (contd) 2.2.2 bidirectional ABD: A two-terminal ABD with a voltage-current avalanche breakdown character

30、istic in both directions, which can be either symmetrical (Figure 2a) or asymmetrical (Figure 2b). Figure 2c shows several alternative symbols for the bidirectional ABD. NOTE Large transient currents will be clamped for voltage of either polarity across two similar p-n junctions in series connected

31、in opposite directions. During a transient current event in this operating mode, one of the two p-n junctions is always in avalanche breakdown and the other is in the forward-conducting, low-voltage mode. The voltage across the bidirectional ABD is the sum of these two voltages. The avalanche breakd

32、own voltage is substantially the same in both directions for a symmetrical bidirectional ABD; however, it may also be intentionally different or asymmetrical by design for special applications. Since multiple p-n junction capacitances in series reduce the overall total capacitance, the bidirectional

33、 ABD has lower capacitance than its unidirectional counterpart. -VKA+VKA-I+I-VKA+VKA-I+IFigure 2a Symmetrical bidirectional ABD Figure 2b Asymmetrical bidirectional ABD Figure 2c Bidirectional ABD symbol options 2.2.3 low-capacitance ABD: A two-terminal device that has at least one unidirectional AB

34、D with at least one rectifier p-n junction connected in series with each ABD in the opposite polarity in order to reduce capacitance. NOTE The rectifier p-n junction(s) operate only in their forward-conducting mode during a transient event. JEDEC Standard No. 210 Page 4 2.2 Classes of avalanche brea

35、kdown diodes (ABDs) (contd) 2.2.3.1 unidirectional-blocking low-capacitance ABD: A two-terminal device that has at least one unidirectional ABD with at least one rectifier p-n junction connected in series in the opposite polarity in order to reduce capacitance. (See Figure 3.) NOTE The unidirectiona

36、l-blocking low-capacitance ABD is intended to suppress transients in only one direction. The rectifier p-n junction(s) have low capacitance and block in the reverse direction; they are not intended to be operated in their reverse avalanche breakdown regions. The p-n junction that serves as the unidi

37、rectional ABD determines which terminal is the anode and which is the cathode; for that determination, the rectifier p-n junction is ignored. Figure 3 Unidirectional-blocking low-capacitance ABD 2.2.3.2 unidirectional-conducting low-capacitance ABD: A two-terminal device comprising a unidirectional-

38、blocking low-capacitance ABD and an anti-parallel diode. (See Figure 4.) NOTE To create a low-capacitance ABD with a forward-conducting, low-voltage characteristic, a low-capacitance diode (such as a rectifier) is placed in anti-parallel to the unidirectional-blocking low-capacitance ABD. This diode

39、 must have a reverse blocking voltage greater than the avalanche breakdown voltage of the unidirectional ABD. Figure 4 Unidirectional-conducting low capacitance ABD JEDEC Standard No. 210 Page 5 2.2 Classes of avalanche breakdown diodes (ABDs) (contd) 2.2.3.3 bidirectional low-capacitance ABD: A two

40、-terminal device comprising two anti-parallel unidirectional-blocking low-capacitance ABD devices. (See Figure 5.) NOTE The rectifier p-n junctions have low capacitance and must have a reverse blocking voltage greater than the avalanche breakdown voltage of the anti-parallel unidirectional ABD eleme

41、nt. Figure 5 Bidirectional low-capacitance ABD 2.2.4 ABD array: A device having three or more terminals and containing multiple diodes within a single package, with at least one of the diodes being an ABD. NOTE ABD arrays can be classified as 1) devices with multiple discrete semiconductor chips; an

42、d 2) devices with multiple diode junctions diffused into a single semiconductor chip. 2.3 Avalanche breakdown diode (ABD) specification concepts 2.3.1 Specification concepts for all ABD types 2.3.1.1 rated working standoff voltage (VWM): The maximum-rated value of dc or repetitive peak positive cath

43、ode-to-anode voltage that may be continuously applied to an ABD over the standard operating temperature range. 2.3.1.2 standby current (ID): The current through an ABD at rated stand-off voltage. 2.3.1.3 breakdown avalanche voltage (V(BR): The voltage across an ABD at a specified current I(BR)in the

44、 breakdown region. JEDEC Standard No. 210 Page 6 2.3 Avalanche breakdown diode (ABD) specification concepts (contd) 2.3.1.4 clamping voltage (VCor VCF): The voltage across an ABD in a region of low differential resistance that serves to limit the voltage across the device terminals. NOTE 1 For an as

45、ymmetrical device, VCrefers to the clamping voltage in the reverse direction, and VCFrefers to the clamping voltage in the forward direction. NOTE 2 Clamping voltage is measured as the peak voltage across an ABD during the application of an impulse current (IPP) for a specified waveform. NOTE 3 Due

46、to thermal, reactive, or other effects, peak voltage and peak pulse current may not necessarily be coincident. 2.3.1.5 peak impulse current (IPP): The peak current that is applied to an ABD to determine the clamping voltage (VC) for a specified impulse waveform. 2.3.1.6 rated random recurring peak i

47、mpulse current (IPPSM): The maximum-rated value of random recurring peak impulse current that may be applied to a device. NOTE 1 A repetitive current is usually a function of the circuit and increases the heating effects within the device. A random recurring transient current is usually due to an ex

48、ternal cause, and it is assumed that its effect will have completely disappeared before the next transient arrives. NOTE 2 The symbol IPPor IPPMis often used by the industry; however IPPSMis preferred. 2.3.1.7 rated average power dissipation (PM(AV): The maximum-rated value of power dissipation resu

49、lting from all sources, including transients and standby current, averaged over a short period of time. NOTE This value should be comparable to the dc power rating of the device. 2.3.1.8 rated random recurring peak impulse power dissipation (PPPSM): The maximum-rated value of the product of rated random recurring peak impulse current (IPPSM) and specified maximum clamping voltage (VC). NOTE 1 A repetitive peak impulse power is usually a function of the circuit and increases the heating effects within the device. A random recurring transient peak