JEDEC JESD353-1968 The Measurement of Transistor Noise Figure at Frequencies up to 20 kHz by Sinusoidal Signal-Generator Method.pdf

1、JEDEC STANDARD The Measurement of Transistor Noise Figure at Frequencies up to 20 kHz by Sinusoidal Signal-Generator Method JESD353 (Previously known as RS-353 and/or EIA-353) APRIL 1968 (Reaffirmed: April 1981, April 1999, March 2009) JEDEC SOLID STATE TECHNOLOGY ASSOCIATION NOTICE JEDEC standards

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7、tion should be addressed to JEDEC at the address below, or call (703) 907-7559 or www.jedec.org Published by JEDEC Solid State Technology Association 2009 3103 North 10th Street Suite 240 South Arlington, VA 22201-2107 This document may be downloaded free of charge; however JEDEC retains the copyrig

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10、on 3103 North 10th Street Suite 240 South Arlington, VA 22201-2107 or call (703) 907-7559 APRIL. Ime (Reaffirmed 4/81, 4/99) ETA STANDARD THE MEASUREMENT OF TRANSISTOR NOISE FIGURE AT FREQUENCIES UP TO 20 kHz BY SINUSOIDAL SIGNAL-GENERATOR METHOD ELECTRONIC INDUSTRIES ASSOCIATION STANDARD RS-353 For

11、mulated by If DEC Semiconductor Device Council NOTICE EIA engineering standards arc designed to serve the public interest through eliminating mis- understandings between manufacturers and purchasers, facilitating interchangeability and improve- ment of products, nd assistin the purchaser in selectin

12、 “h. f proper product for IS particu ar need. Existence of SW f, and obtaining with minimum delay the standards shall not in any respect pre- elude any member or non-member of EIA from manufacturing or selling products not conforming to such standards, nor shall the existence of such standards precl

13、ude their voluntary use by those other than EIA members whether the standard is to be used either domesticaIIy or internationally. Recommended standards are adopted by EIA without regard to whether or not their adoption may involve patents on articles, materials, or processes. By such action, EIA do

14、es not assume any liability to any patent owner, nor does it assume any obligation whatever to parties adopting the recommended standards. Published by ELECTRONIC MNJSTRIES ASSOCIATION Engineering Department 2001 Eye Street, N. W., Washington, D. C. 20006 R5353 Page 1 STANDARD FOR THE MEASUREMENT OF

15、 TRANSISTOR NOISE FIGURE AT FREQUENCIES UP TO 20 kHz BY SINUSOIDAL SIGNAL-GENERATOR METHOD (From Standards Proposal No. 962, formulated under the cognizance of JEDEC Committee JS-9 on Signal Transistors.! 1. INTRODUCTION The following noise measurement method applies to transistors whose noise has a

16、 Gaussian power distribution, to transistors whose noise has a flat (white) power distribution, and to transistors whose noise has a l/f (power inversely proportional to frequency) power distribution. Figure 1 shows a suitable method for measuring the transistor noise figure at frequencies equal to

17、or less than 20 kHz. The values for the generator source resistance (as seen by the transistor), Rs, the d-c operating conditions, and free-air, lead or case temperature will depend upon the application and upon the optimum conditions for any particular device. These quantities, as well as the test

18、frequency, should be specified. Common-emitter (common-source) configuration is assumed unless otherwise indicated. 1.1 Definition The Noise Figure (Spot Noise Figure ),I at a specified frequency, is defined as the ratio of (1) the total noise power per unit bandwidth at that frequency available at

19、the output port when the noise temperature of the input termination is at the standard temperature (290K) to (2) that portion of (1) engendered by the input termination. 2. GENERAL The test set-up must be very well shielded, grounded, and securely interconnected to prevent pick-up of unwanted signal

20、s and generation of additional noise. 2.1 Signal Generator The signal generator is a sine-wave oscillator capable of operation up to 20 kHz. Abridged version of the Noise Factor definition. IRE Standard on Electron Tubes; Definitions ofTems, 1957 (57 IRE 7S2). RS-353 Page 2 2.2 Bias Supplies Batteri

21、es or low-ripple d-c supplies should be used. All biases applied should be bypassed for both radio and audio frequencies. 2.3 Amplifier The amplifier noise should be such that with the signal generator turned off, any transistor under test gives at least an increase of 15 dB above the reading due to

22、 the post amplifier itself with no transistor in the test circuit. Heterodyne-type post amplifiers may be used but careful attention must be paid to the image and other spurious responses which can be encountered with such amplifiers. These spurious responses must be made negligible or must be accou

23、nted for in the measurement. To provide for the crest factor of the noise, the amplifier must be essentially linear from the indicated KMS level to a minimum of IO dB above the indicated RMS Icvel. 2.4 System Pass-Band The system pass-band, which includes the transistor under test, shall be adjusted

24、 by means of filters so that the response to white and/or l/f noise would be the same to within the accuracy desired Analysis of such filter systems are qllite complicated; however, the following twn systems have been analyd: 1. With l/f noise voltage applied to a single-section resonant filter havi

25、ng a Q of 6, the indicated noise voltage density will be 2.2% lower than the true spot noise voltage density :It the resonant frequency of the filter. The equivalent white-noise bandwidth of the filter is I .57 times the 3-dB bandwidth. 2. With l/f noise voltage applied to a maximally flat four-sect

26、ion filter having a white-noise bandwidth numerically equal to the geometric center frequency of the filter, the indicated noise voltage density will be 1.9% lower than the true spot noise voltage density at the geometric center frequency. The equivalent white-noise bandwidth of the filter is 1.025

27、times the 3-dB bandwidth.2 2.5 Noise Detectors3n4 The noise detector must respond to the true RMS value or average value of the applied signal. If an average type detector is used, the RMS value indicated for noise will be I .05 dB low. The integration time should be as long as practical in accordan

28、ce with the accuracy required as determined by the following equations: Valley and Wallman. Vacuum Tube Amplifiers. Radiation Lab Series. Vol. 18, p. 169, 1948. A. Conrad. et al, A Recommended Sfandard ResismrNoise Test Sysfem, IRE Trans. of P.G. on Componrnt Parts. Vol. CP-7. No.3. September 1960.

29、FiS-353 Page 3 True RMS Detector For total integration time, t For time r = time constant Averaging Detector (Linear Full-Wave Detector) 1 0= m where: o= B= t = 7 = a=& the one-sigma deviation of the RMS value from the long-time average the equivalent system-noise bandwidth in hertz total integratio

30、n time in seconds simple RC time constant 3. TRANSISTOR UNDER TEST The transistor under test shall be inserted in an amplifier circuit having the general configuration shown in Figure 1. A similar configuration in which the transistor is operated in the common-base (common-gate) or common-collector

31、(common-drain) connection may be used. 4. METHOD OF TEST The attenuator is adjusted to give a convenient reading on the noise detector. The signal voltage Vg, is adjusted such that the output voltage VO2 is at least ten times as large as the output voltage VO1 corresponding to zero-signal voltage. T

32、hus, the spot noise figure is: (vO1)2 (vg)” NF indB = 1010gVo22 4kTBRs where: k = Boltzmanns Constant = 1.38054 x I O-23 J/deg T = Absolute Temperature of R, in “K RS-363 Page 4 Rs = Generator (source) Resistance B = The equivalent system-noise bandwidth in hertz VO2 = The output voltage VOl = The o

33、utput voltage at zero-signal voltage “g = Signal generator voltage 5. SYSTEM ACCURACY System errors consist of the following: I. Calibration errors 2. Pass-band determination (See Section 2.4) 3. Meter deviation (See Section 2.5) 4. Amplifier noise will increase the noise figure measurement by less

34、than 0.1 dB if it is more than 15 dE below that of the transistor under test. SIGNAL GENERATOR -I TRANSISTOR UNDER PRE- + AMP. + ATTENUATOR -t POST TEST AMP. + SELECTIVE NOISE FILTER a DETECTOR BIAS SUPPLIES FIGURE I RELATED EIA STANDARDS In addition to this Standard the following EIA Standards pert

35、inent to transistor noise figure measure- ments are available: RS-283 Test Method for Transistor Noise Figure Measurements at Medium Frequencies (NEMA Publication No. SK 503-1963). . . . . . $ .60 RS-306 Measurement of Small Signal HF, VHF and UHF Power Gain of Transistors (NEMA Publication No. SK 5

36、06-1965) . . . . .60 RS-3 1 I RS-354 Measurement of Transistor Noise Figure at HF and VHF (NEMAPublication No. SK 509-1965) . . . . 1.00 The Measurement of Transistor Equivalent Noise Voltage and Equivalent Noise Current ag Frequencies up to 20 kHz . . . . . 1 .OO Minimum Order $1.00 - For a free and complete list of all EIA Standards and Publications write: Engineering Department Electronic Industries Association 2001 Eye Street, N.W. Washington, D. C. 20006