JEDEC JESD354-1968 The Measurement of Transistor Equivalent Noise Voltage and Equivalent Noise Current at Frequencies of up to 20 kHz.pdf

1、JEDEC STANDARD The Measurement of Transistor Equivalent Noise Voltage and Equivalent Noise Current at Frequencies of up to 20 kHz JESD354 (Previously known as RS-354 and/or EIA-354) APRIL 1968 (Reaffirmed: April 1981, April 1999, March 2009) JEDEC SOLID STATE TECHNOLOGY ASSOCIATION NOTICE JEDEC stan

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7、ublication should be addressed to JEDEC at the address below, or call (703) 907-7559 or www.jedec.org Published by JEDEC Solid State Technology Association 2009 3103 North 10th Street Suite 240 South Arlington, VA 22201-2107 This document may be downloaded free of charge; however JEDEC retains the c

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10、ociation 3103 North 10th Street Suite 240 South Arlington, VA 22201-2107 or call (703) 907-7559 (Reaffirmed 4/81, 4/99) EIA STANDARD The Measurement of Transistor Equivalent Noise Voltage and Eq uivalent Noise Current at Frequencies up to 20 kHz ELECTRONIC INDUSTRIES ASSOCIATION STANDARD RS-354 Form

11、ulated by lEDEC Semiconductor Device Council NOTICE EIA engineering standards arc designed to serve the public interest through eliminating mis- understandings between manufacturers and purchasers. facilitating interchangeability and improve- ment of products, and assisting the purchaser in selectin

12、g and obtaining with minimum delay thr proper product for his particular need. Existence of such standards shall not in any respect prc- elude any member or non-member of EIA from manufacturing or selling products not conforming to such standards, nor shall the existence of such standards preclude t

13、heir voluntary use by those other than EIA members whether the standard is to be used either domestically or internationally. Recommended standards are adopted by EIA without regard to whether or not their adoption may involve patents on articles, materials, or processes. By such action, EIA does no

14、t assume any liability to any patent owner, nor does it assume any obligation whatever to parties adopting the recommended standards. Published by ELECTRONIC INDUSTRIES ASSOCIATION Engineering Department 2001 Eye Street, N. W., Washington, D. C. 20006 RS-354 Page 1 THE MEASUREMENT OF TRANSISTOR EQUI

15、VALENT NOISE VOLTAGE AND EQUIVALENT NOISE CURRENT AT FREQUENCIES UP TO 20 kHz (From Standards Proposal No. 963, formulated under the cognizance of JEDEC Committee JS-9 on Industrial Signal Transistors.! 1. INTRODUCTION The following noise measurement method applies to transistors whose noise has a G

16、aussian power distribution, to transistors whose noise has a flat (white) power distribution, and to transistors whose noise has a l/f (power inversely proportional to frequency) power distribution. Figure 1 shows a suitable method for measuring the transistor equivalent noise voltage and equivalent

17、 noise current at frequencies equal to or less than 20 kHz. The values for the driving source impedance (as seen by the transistor), Z, the d-c operating conditions, and free-air, lead or case temperature will depend upon the application and upon the optimum conditions for any particular device. The

18、se quantities, as well as the test frequency, should be specified. Common-emitter (common-source) configuration is assumed unless otherwise indicated. 1.1 Definitions “en” is the equivalent noise voltage for unity bandwidth. “(en ) 7 x” represents the spectral density of the equivalent short-circuit

19、 noise voltage generator at the input of the transistor, as shown in Figure 2, at a specified frequency and bandwidth, expressed in units of volts/e. “in” is the equivalent noise current for unity bandwidth. “(s)s3” represents the spectral density of the equivalent open-circuit noise current generat

20、or at the input of the transistor, as shown in Figure 2, at a specified frequency and bandwidth, expressed in units of amperes/ m 2. GENERAL The test set-up must be very well shielded, grounded, and securely interconnected to prevent pick-up of unwanted signals and generation of additional noise. 2.

21、1 Signal Generator The signal generator is a sine-wave oscillator capable of operation up to 20 kHz. M-354 Page 2 2.2 Bias Supplies Batteries or low-ripple d-c supplies should be used. All biases applied should be bypassed for both radio and audio frequencies. 2.3 Amplifier The amplifier noise sloul

22、d be such that with the signal generator turned off, any transistor under test gives at least an increase of 15 dB above the reading due to the post amplifier itself with no transistor in the test circuit. Heterodyne-type post amplifiers may be used but careful attention must be paid to the image an

23、d other spurious responses which can be encountered with such amplifiers. These spurious responses must be made negligible or must be accounted for in the measurement. To provide for the crest factor of the noise, the amplifier must be essentially linear from the indicated RMS level to a minimum of

24、10 dB above the indicated RMS level. 2.4 System Pass-Band The system pass-band which includes the transistor under test shall be adjusted by means of filters so that the response to white and/or l/f noise would be the same to within the accuracy desired. Analysis of such filter systems are quite com

25、plicated; however, the following two systems have becn analyzed: 1. With l/f noise voltage applied to a single-section resonant filter having a Q of 6, the indi- cated noise voltage density will be 2.2% lower than the true spot noise voltage density at the resonant frequency of the filter. The equiv

26、alent white-noise bandwidth of the filter is 1.57 times the 3-dB bandwidth. 2. With l/f noise voltage applied to a maximally flat four-section filter having a white noise bandwidth numerically equal to the geometric center frequency of the filter, the indicated noise voltage density will be 1.9% low

27、er than the true spot noise voltage density at the geo- metric center rrequency. The equivalent white-noise bandwidth of the filter is 1.025 times the 3-dB bandwidth.* 2.5 Noise Detected,“ The noise detector must respond to the true RMS value or average value of the applied signal. If an average typ

28、e detector is used, the RMS value indicated for noise will be 1.05 dB low. The integration RS-354 Page 3 time should be as long as practical in accordance with the accuracy required as determined by the fol- lowing equations: True RMS Detector For total integration time, t o= For time T = time const

29、ant o= Averaging Detector (Linear Full-Wave Detector) where o = the one-sigma deviation of the RMS value from the long-time average B = the equivalent system noise bandwidth in hertz t = total integration time in seconds T = simple RC time constant 3. TRANSISTOR UNDER TEST The transistor under test

30、shall be inserted in an amplifier.circuit having the general configuration shown in Figure 1. A similar configuration in which the transistor is operated in the common-base (common- gate) or common-collector (common-drain) connection may be used. 4. METHOD OF TEST 4.1 Measurement of en The driving s

31、ource admittance is selected such that Qe,. The attenuator is adjusted to give a convenient reading on the noise detector. The signal voltage, Vg, is adjusted such that the output voltage, Vo2, is at least ten times as large as the output voltage, Vol, corresponding to zero-signal voltage. Thus, the

32、 equivalent noise voltage is: RS-354 Page 4 where B = the equivalent system noise bandwidth in hertz k = Boltzmans constant i .38054 x lo-23 J/deg T = Absolute temperature of R, in OK Vg = Signal generator voltage Vo2 = output voltage “01 = Output voltage at zero signal voltage Ys = Driving source a

33、dmittance (Gs +jB,) correspondingly ZS = Driving source impedance (R, _+_ jX,) = l/Y, 4.2 Measurement of in The attenuator is adjusted to give a convenient reading on the noise detector. The signal voltage, Vg, is adjusted such that the output voltage. Vo2. is at least ten times as large as the outp

34、ut voltage. Vol, corresponding to zero-signal voltage. Thus, the equivalent noise currer.t is: (G)% - - ($ ,$ +)2 _ “;:,;i _ !&-j% AS Zs is increased, the values of the second and third terms decrease. But, Vol generally in- creases with Zs, due to in. Hence, for large values of Z,: ($)” ” vol “g l

35、“02 IZSI 6 where B = the equivalent system-noise bandwidth in hertz k = Boltzmans constant = 1.38054 X 1 O-23 J/deg T = Absolute temperature of R, in oK Vg = Signal generator voltage vo2 = output voltage vO1 = Output voltage at zero-signal voltage Ys = Driving source admittance (C, *jB,) correspondi

36、ngly Zs = Driving source impedance (R, +jXs) = I /Ys RS-364 Page 5 5. SYSTEM ACCURACY System errors consist of the following: 1. Calibration errors 2. Pass-Band determination (see Section 2.4) 3. Meter deviation (see Section 2.5) 4. Amplifier noise will increase the noise measured by less than 0.1 d

37、B if it is more than 15 dB below that of the transistor under test. SIGNAL TRANSISTOR GENERATOR * UNDER PRE- + AMP. 5 ATTENUATOR -c, POST AMP. -I SELECTIVE NOISE TEST FILTER + DETECTOR 4 BIAS SUPPLIES FIGURE 1 r -m-m- 1 I I I VO I TRANSISTOR UNDER TEST I -_- J FIGURE 2 RELATED STANDARDS In addition

38、to this Standard the following EIA Standards pertinent to transistor noise figure measure- ments are available: RS-283 Test Method for Transistor Noise Figure Measurements at Medium Frequencies (NEMA Publication No. SK 503-1963) $ .60 RS-306 Measurement of Small Signal HF, VHF and UHF Power Gain of

39、Transistors (NEMA Publication No.SK506-1965) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t .60 RS-3 11 Measurement of Transistor Noise Figure at HF and VHF (NEMA Publication No. SK 509-1965) . : . . 1 .OO RS-353 The Measurement of Transistor Noise Figure at Freque

40、nces up to 20 kHz by Sinusoidal Signal GeneratorMethod . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .80 Minimum Order $1.00 For a free and complete list of EIA Standards and Publications write: Engineering Department Electronic Industries Association 2001 Eye Street, N.W. Washington, D. C. 20006 -