1、IA JESD.51-1 95 3234600 0567306 128 EINJEDEC STANDARD _ Integrated Circuit Thermal Measurement Method - Electrical Test Method (Single Semiconductor Device) EINJESD51-1 DECEMBER 1995 ELECTRONIC INDUSTRIES ASSOCIATION ENGINEERING DEPARTMENT COPYRIGHT Electronic Industries AllianceLicensed by Informat
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8、M Headquarters, 2500 Wilson Boulevard, Arlington, VA 2220 1. Published by QELECTRONIC INDUSTRIES ASSOCIATION 1995 Engineering Department 2500 Wilson Boulevard Arlington, VA 2220 1 “Copyright“ does not apply to JEDEC member companies as they are free to duplicate this document in accordance with the
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12、 by Information Handling ServicesEIA JESDSL-L 95 3234600 O567307 737 EINJEDEC Standard No. 51-1 INTEGRATED CIRCUIT THERMAL MEASUREMENT METHOD - ELECTRICAL TEST METHOD (SINGLE SEMICONDUCTOR DEVICE) CONTENTS 1. INTRODUCTION 1.1 PURPOSE 1.2 SCOPE 1.3 RATIONALE 1.4 REmRENCES 1.5 DEFINITIONS 2. MEASUREME
13、NT BASICS 2.1 TEMPERATURE-SENSITIE PARAMETER 2.1.1 MEASUREMENT CURRENT CONSIDERATIONS 2.1.2 K FACTOR CALIBRATION 2.2 COOLING TIME CONSIDERATIONS 2.3 HEATING TIME CONSIDERATIONS 2.4 TEST WAVEFORMS 2.5 ENVIRONMENTAL CONSIDERATIONS 2.6 TESTSETUP 3. MEASUREMENT PROCEDURE 3.1 3.1.1 3.1.2 3.2 3.3 3.4 3.4.
14、1 3.4.2 3.5 3.6 3.7 3.8 DEVICE CONNECTION THERMAL TEST DE ACTIVE DE MEASUREMENT CURRENT DETERMINATION K FACTOR CALIBRATION TEST CONDITION DETERMINATION HEATING CONDITIONS MEASUREMENT CONDITIONS TEST CONDITION CORRECTION DATA VALIDITY TEST CONDITION SUMMARY THERMAL STEADY-STATE DETERMINATION 4. DATA
15、CORRECTION AND PRESENTATION ANNEX A DEFTNITIONS (informative) 3 4 4 5 6 7 8 10 11 12 12 12 13 14 16 18 18 18 20 22 24 25 25 27 - 30 -1- COPYRIGHT Electronic Industries AllianceLicensed by Information Handling ServicesEIA JESD51-1 95 9 3234600 0567110 b59 9 This page intentionally lefi blank 1. -11-
16、COPYRIGHT Electronic Industries AllianceLicensed by Information Handling Services - EIA JESD5L-L 95 E 3234b00 05b7LLL 595 EWJEDEC Standard No. 5 1 - 1 Page 1 INTEGRATED CIRCUIT THERMAL MEASUREMENT METHOD - ELECTRICAL TEST METHOD (SINGLE SEMICONDUCTOR DEVICE) (From JEDEC Council Ballot JCB-95-29, for
17、mulated under the cognizance of JC-15 Committee on Electrical and Thermal Characterization Techniques for Electronic Packages and Interconnects.) 1. INTRODUCTION 1.1 PURPOSE The purpose of this test method is to define a standard Electrical Test Method (ETM) that can be used to determine the thermal
18、 characteristics of single integrated circuit devices housed in some form of electronic package. This method will provide a basis for comparison of different devices housed in the same electronic package or similar devices housed in different electronic packages. By virtue of the standardizing of ai
19、l pertinent terms, this method also improves the communication and exchange of information relative to the thermal characteristics of electronic packages housing a single semiconductor device. 1.2 SCOPE The measurement method described herein is equally applicable to both thermal test die and active
20、 intemted circuit devices. Thermal test die, consisting of a heat source and temperature sensor integrated into a semiconductor chip, are commonly used for package thermal characterization efforts, especially when one package is being compared to another. Integrated circuit devices, operating in an
21、active mode that approximates intended applications, are used when specific application-oriented specification information is required. The measurement is limited to a single die (either test die or active die) housed in a package intended for a single die. 1.3 RATIONALE Increased requirements for s
22、emiconductor performance, reliability, quality, and lower cost have forced the need for knowledge of the semiconductor device junction temperature. However, without a well-defined standard methodology for making thermal measurements, it has become increasingly difficult to accurately determine junct
23、ion temperature under actual operating and environmental conditions. Knowing the semiconductor device thermal resistance for a specific electronic package allows both the manufacturer and user to determine the junction temperature of the device. COPYRIGHT Electronic Industries AllianceLicensed by In
24、formation Handling Services EIA JESD51-1 95 m 3234600 0567LL2 421 m EINJEDEC Standard No. 5 1-1 Page 2 Accurate and correct thermal measurements are difficult to make because of the many variables that impact the final results. Electrical considerations (such as power, voltage and current levels, in
25、put and output levels, etc.), environmental considerations (mounting configuration, surroundings, mounting methodology, etc.) and selection of the junction temperature sensor will directly affect the thermal measurement. It should also be noted that the thermal characteristics of any semiconductor d
26、evice are not necessarily constant with temperature or power dissipation, thus requiring thermal measurements under conditions that approximate actual operation in the applications. 1.4 REFERENCES The following documents are recommended reading for reference and test method standard description purp
27、oses: Mil Std 883C Method 1012.1 Thermal Characteristics of Microelectronic Devices SEMI Test Method #G43-87 Test Method, Junction-to-Case Thermal Resistance Measurements of Molded Plastic Packages SEMI Test Method #G38-87 Still and Forced Air Junction-to-Am bient Thermal Resistance Measurements of
28、Integrated Circuit Packages SEMI Test Method #G42-88 Specification, Thermal Test Board Stanhdiiation for Measuring Junction- To- Ambient Thermal Resistance of Semiconductor Packages SEMI Test Method #G30-88 Junction-to-Case Thermal Resistance Measurements of Ceramic Packages SEMI Test Method #G32-86
29、 SEUI Guideline for Unencapsulated Thermal Test Chip SEMI Test Method #G46-88 Thermal Transient Testing for Die Attachment Evaluation of Integrated Circuits NIST Special Publication 400-86 Semiconductor Measurement Technology: Thermal Resistance Measurements 1.5 DEFINITIONS Refer to ANNEX A for a li
30、st of terminology and symbols applicable to this document. COPYRIGHT Electronic Industries AllianceLicensed by Information Handling Services EIA JESD51-1 95 3234600 0567113 368 EINJEDEC Standard No. 5 1-1 Page 3 2. MEASUREMENT BASICS The thermal resistance of a semiconductor device is generally defi
31、ned as: 73 - Tr %JX = where Rem = thermal resistance from device junction to the specific environment (alternative symbol is em) “CnV = device junction temperature in the steady state test condition O Cl = reference temperature for the specific environment “CI = power dissipated in the device wl TJ
32、TX PH The device junction temperature in the test condition can be determined by: TJ = TJO + ATj where TJO ATJ = initial device junction temperature before heater power is = change in junction temperature due to heater power applied “CI application “CI The Electrical Test Method (ETh.), described he
33、rein, makes use of a temperature-sensitive parameter (TSP) to sense the change in temperature of the junction operating area due to the application of electrical power to the device-under-test (DUT). In equation terms, AT =KxATSP (3) J where ATSP = change in temperature-sensitive parameter value mv
34、K = constant defining relationship between changes in TJ and TSP “Clmv For many test environments, the test conditions can be arranged such that the specific environment temperature (TX) is also the initial temperature of the device before the device is powered and that the specific environment temp
35、erature does not change during the test. Under those conditions, the equations simplify to: FTJIX PH (4) %X= The units of thermal resistance are usually “CN. It should be noted that the relationship between junction temperature change and power dissipation is usually linear over some specific range
36、of conditions and may vary considerably at the extremes of device operation. The method itself is independent of the environment of the device under test (DUT), thus requiring careful and detailed attention to environmental conditions in order to assure that the test produces meaningful results. COP
37、YRIGHT Electronic Industries AllianceLicensed by Information Handling ServicesEIA JESDSL-L 95 m 3234600 0567334 2T4 EINJEDEC Standard No. 5 1 - 1 Page 4 There are two approaches to ETM implementation. The first, referred to as the Static Mode, applies heating power to the DUT on a continuous basis w
38、hile monitoring the junction temperature through measurement of the temperature-sensitive parameter. This mode is most suitable for use with thermal test die and some active integrated circuit devices. The second approach, referred to as the Dynamic Mode, switches rst from a temperature-sensitive pa
39、rameter measurement condition, then to a heating condition during which power is applied to the DUT for a specific period of time, and then back to the measurement condition. This mode is needed for most active integrated circuit devices and is also suitable for most thermal test die. In both modes,
40、 the difference between the initial and final measurement conditions is directly related to the temperature rise caused by the application of power to the DUT for a specific period of time. 2.1 TEMPERAIZTRE-SENSITIVE PARAMETER The most commoniy used temperaturesensitive parameter (TSP) is the voltag
41、e drop across a fonvard- biased diode. This diode is specifically designed into thermal test die and usually exists as a parasitic device (substrate isolation diode, input protection diode, output steering diode, etc.) in most integrated circuit devices. Other common methods of sensing temperature o
42、n an IC die include using the resistance shift with temperature of a metal-fim resistor or diffused resistor. 2.1.1 MEASUREMENT CURRENT CONSIDERATIONS The Measurement Current (IM) through the temperature sensing diode must be large enough to obtain a reliable forward voltage reading not influenced b
43、y surface leakage effects but small enough not to cause sigmcant seifheating. The value of IM is chosen to be in a range right around the knee of the diodes I-V curve, as shown in figure 1, and is usually in the 100 pA to 5 mA range, depending on the diode size. Lower values of current can be used,
44、but for greatest ease in implementing the measurement and to eliminate potential surface leakage effects (which can result in significant non- temperature dependent variability between diodes of the same construction and size) the current is rarely chosen below 100 pA and is usually 1 mA. The upper
45、limit on IM is determined by self-heating effects, which in turn are a function of the diode geometry. I O Figure 1. - I, selection relative to typical diodc I-V Curvc COPYRIGHT Electronic Industries AllianceLicensed by Information Handling ServicesEIA JESD5L-1 95 3234600 0567115 L30 EINJEDEC Standa
46、rd No. 5 1-1 Page 5 2.1.2 K FACTOR CALIBRATION Once the proper value of IM is selected, the relationship between the temperature sensing diode forward voltage and junction temperature is determined by performing a K FACTOR CALIBRATION. During this procedure, the diode is forward biased with IM while
47、 inserted into a temperature-controlled environment. The forward voltage of the diode is recorded for two or more different equilibrium temperature conditions. Because IM is specifically chosen not to cause significant self heating, the environment temperature and junction temperature are taken to b
48、e essentially the same. Using the diode conduction equation, Equation 5 below, it can be shown * that for a fixed applied current (IM in this case), the forward voltage will vary linearly with junction temperature. The saturation current (IO) expression is given in Equation 6. Taking the derivative
49、of equation 5 with respect to temperature (dropping the unity term with respect to the exponential) and inserting the derivative of the logarithm of equation 6 into the first derivative, produces equation 7. dT T T (7) where k = Boltzmann constant q = electronic charge T = temperature in K For silicon devices, n = 2 (usualiy in the range of 1 to 2), m = 1.5 and VGO = 1.21 V. Thus, assuming an IM value sufficient to make V equal 0.6 V at ajunction temperature of 300 K, equation 7 yields: dV - = 2.293 mV/“C dT AS. Grove, Physics and Technology o
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