JEDEC JESD89-3A-2007 Test Method for Beam Accelerated Soft Error Rate (Addendum No 3 to JESD89).pdf

1、JEDEC STANDARD Test Method for Beam Accelerated Soft Error Rate JESD89-3A Addendum No. 3 to JESD89 (Revision of JESD89-3, September 2005) NOVEMBER 2007 (Reaffirmed: JANUARY 2012)JEDEC SOLID STATE TECHNOLOGY ASSOCIATION NOTICE JEDEC standards and publications contain material that has been prepared,

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10、559 JEDEC Standard No. 89-3A Page 1 Test Method for Beam Accelerated Soft Error Rate (From JEDEC Board Ballot JCB-05-104 and JCB-07-89, formulated under the cognizance of the JC-14.1 Subcommittee on Reliability Test Methods for Packaged Devices.) 1 Scope This test method is offered as a standardized

11、 procedure to determine the terrestrial cosmic ray Soft Error Rate (SER) sensitivity of solid state volatile memory arrays and bistable logic elements (e.g. flip-flops) by measuring the error rate while the device is irradiated in a neutron or proton beam of known flux. JESD89 describes consideratio

12、ns for executing such an estimate from data collected with this method. Refer to JESD89 for other background on the motivation for requirements in this test method and guidance for those elements left to the discretion of the tester. The results of this accelerated test can be used to estimate the t

13、errestrial cosmic ray induced SER for a given terrestrial cosmic ray radiation environment. NOTE 1 This test cannot be used to project alpha-particle-induced SER. NOTE 2 Special considerations apply to devices that are more than memory arrays and/or bistable logic elements. These can preclude the ap

14、plication of this test procedure. Refer to JESD89 for further discussion on some examples. 2 Applicable documents JESD89 Measurement and Reporting of Alpha Particles and Terrestrial Cosmic Ray-Induced Soft Errors in Semiconductor Devices JESD89-1 Test Method for Real-Time Soft Error Rate JESD89-2 Te

15、st Method for Alpha Source Accelerated Soft Error Rate 3 Apparatus The performance of this test requires equipment that is capable of providing the particular test conditions to which the test samples will be subjected. 3.1 Vehicle design and operation The biasing and operating schemes shall conside

16、r the limitations of the devices and shall not overstress the devices or contribute to thermal runaway. 3.2 Device mounting Equipment design, if required, shall provide for mounting of devices to minimize adverse effects while parts are under test (e.g., improper heat dissipation). JEDEC Standard No

17、. 89-3 Page 2 3 Apparatus (contd) 3.3 Power supplies and signal sources Instruments (e.g., oscilloscopes) used to set up and monitor power supplies and signal sources shall be calibrated and have long-term stability. Electrical noise shielding shall be in place to allow for accurate test results. 3.

18、4 Scattered/stray radiation Special attention should be taken with respect to the effects of scattered radiation from the beam on the test setup. Technical personnel operating the facility should be consulted in terms of the relative flux of the forward and backward scattering distribution of the be

19、am. They should also be consulted on effectiveness of shielding materials for the main beam and scattered beam attenuation. Spectral purity (e.g., energy and species) is also important. Scattering of the primary beam with material upstream from the DUT can generate additional radiation. Technical pe

20、rsonnel operating the facility should be able to provide an estimate of the relative intensity of this stray radiation and effective means to shield it from the experiment. For example, thermal neutrons will be present in any high energy neutron beam, but use of material rich in B-10 can act as an e

21、ffective attenuator (refer to JESD89 for details). This enables distinction of device effects due to high energy neutrons from those due to thermal neutrons. The results of the testing should be due to radiation effects on the DUT and not from interaction of radiation with other components in the te

22、st. In particular, power supplies can be vulnerable to radiation-induced avalanche breakdown. Sensitive electronic circuits in the tester and any device on the DUT board (e.g., buffers or registers) can also be affected. Any of these components should be moved as far from the primary and scattered b

23、eam as possible or appropriate shielding should be used. Assure that the tester and power supply are not affected by scattered radiation from the beam before conducting tests in a new facility or before conducting tests with a new tester setup (including modified shielding of the tester). To assure

24、this, position and shield the tester exactly as during actual tests except for the DUT that shall be positioned outside the beam or shall be shielded from the beam. With the beam on and the DUT shielded or otherwise not exposed to the beam, test the DUT. Tester setup verification is successful if no

25、 failures are observed. Unless otherwise specified, this tester setup verification test shall last as long as a typical test. Care shall be taken to prevent upsets from stray signals or noise in the cables to the DUT. A tester readiness check shall be performed as part of the test sequence to assure

26、 electrical noise immunity, see section 4.3.1. JEDEC Standard No. 89-3A Page 3 4 Terms and definitions absolute maximum rated temperature: The maximum junction or ambient temperature of an operating device as listed in its data sheet and beyond which damage (latent or otherwise) may occur. It is fre

27、quently specified by device manufacturers for a specific device and/or technology. NOTE Manufacturers may also specify maximum case temperatures for specific packages. absolute maximum rated voltage: The maximum voltage that may be applied to a device and beyond which damage (latent or otherwise) ma

28、y occur. It is frequently specified by device manufacturers for a specific device and/or technology. critical charge (Qc): The minimum amount of collected charge that will cause the node to change state. DUT: Device under test. ECC: Error correction code, sometimes called error detection and correct

29、ion (EDAC). failure cross section: The numbers of failures detected per fluence . fluence: The number of radiant-energy particles emitted from or incident on a surface during a given period of time, divided by the area of the surface. NOTE 1 The equation “fluence = N/A” applies, where N and A repres

30、ent the quantities number of particles and area. Fluence can also be calculated by integrating the flux density over the given period of time, e.g., as in a run. NOTE 2 The unit symbol (e.g., cm-) does not identify particle type. The particle name may be placed before the term, e.g., “neutron fluenc

31、e”, or in the spelled-out unit name, e.g., “neutrons per square centimeter”. NOTE 3 Fluence of particle radiation incident on a surface is maximized when the surface is perpendicular to the direction of the incident particle flow. flux density (of particle radiation): The time rate of flow of radian

32、t-energy particles emitted from or incident on a surface, divided by the area of that surface. NOTE 1 The equation “flux density = N/At” applies, where N, A, and t represent the quantities number of particles, area, and time. NOTE 2 The unit symbol (e.g., cm-2s-1) does not identify particle type. Th

33、e particle name may be placed before the term, e.g., “neutron flux density”, or in the spelled-out unit name, e.g., “neutrons per square centimeter second”. NOTE 3 Flux density is maximized when the surface is perpendicular to the direction of the incident particle flow. golden part: A sample used t

34、o monitor the consistency of the beam and tester setup. JEDEC Standard No. 89-3 Page 4 4 Terms and definitions (contd) maximum operating voltage: The maximum supply voltage at which a device is specified to operate in compliance with the applicable device specification or data sheet. minimum operati

35、ng voltage: The minimum supply voltage at which a device is specified to operate in compliance with the applicable device specification or data sheet. multiple-bit upset (MBU): A multiple-cell upset (MCU) in which two or more error bits occur in the same word. NOTE An MBU cannot be corrected by simp

36、le (single-bit) ECC. multiple-cell upset (MCU): A single event that induces several bits in an IC to fail at the same time. NOTE The error bits are usually, but not always, physically adjacent. single-event burnout (SEB): An event in which a single energetic-particle strike induces a localized high-

37、current state in a device that results in catastrophic failure. single-event effect (SEE): Any measurable or observable change in state or performance of a microelectronic device, component, subsystem, or system (digital or analog) resulting from a single energetic-particle strike. NOTE Single-event

38、 effects include single-event upset (SEU), multiple-bit SEU (MBU), multiple-cell upset (MCU), single-event functional interrupt (SEFI), single-event latch-up (SEL), single-event hard error (SHE), single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR). single-e

39、vent functional interrupt (SEFI): A soft error that causes the component to reset, lock-up, or otherwise malfunction in a detectable way, but does not require power cycling of the device (off and back on) to restore operability, unlike single-event latch-up (SEL), or result in permanent damage as in

40、 single-event burnout (SEB). NOTE An SEFI is often associated with an upset in a control bit or register. single-event gate rupture (SEGR): An event in which a single energetic-particle strike results in a breakdown and subsequent conducting path through the gate oxide of a MOSFET. NOTE An SEGR is m

41、anifested by an increase in gate leakage current and can result in either the degradation or the complete failure of the device. single-event hard error (SHE): An irreversible change in operation resulting from a single radiation event and typically associated with permanent damage to one or more el

42、ements of a device (e.g., gate oxide rupture). JEDEC Standard No. 89-3A Page 5 4 Terms and definitions (contd) single-event latch-up (SEL): An abnormal high-current state in a device caused by the passage of a single energetic particle through sensitive regions of the device structure and resulting

43、in the loss of device functionality. NOTE 1 SEL may cause permanent damage to the device. If the device is not permanently damaged, power cycling of the device (off and back on) is necessary to restore normal operation. NOTE 2 An example of SEL in a CMOS device occurs when the passage of a single pa

44、rticle induces the creation of parasitic bipolar (p-n-p-n) shorting of power to ground. single-event transient (SET): A momentary voltage excursion (voltage spike) at a node in an integrated circuit caused by the passage of a single energetic particle. single-event upset (SEU): A soft error caused b

45、y the transient signal induced by the passage of a single energetic particle. soft error, device: An erroneous output signal from a latch or memory cell that can be corrected by performing one or more normal functions of the device containing the latch or memory cell. NOTE 1 As commonly used, the te

46、rm refers to an error caused by radiation or electromagnetic pulses and not to an error associated with a physical defect introduced during the manufacturing process. NOTE 2 Soft errors can be generated from SEU, SEFI, MBU, MCU, and/or SET. The term SER, which includes a variety of soft error mechan

47、isms, has been adopted by the commercial industry while the more specific terms SEU, SEFI, etc. are typically used by the avionics, space, and military electronics communities. soft error, power cycle (PCSE): A soft error that is not corrected by repeated reading or writing but can be corrected by t

48、he removal of power (e.g., nondestructive latch-up). soft error, static: A soft error that is not corrected by repeated reading but can be corrected by rewriting without the removal of power. soft error, transient: A soft error that can be corrected by repeated reading without rewriting and without

49、the removal of power. JEDEC Standard No. 89-3 Page 6 5 Procedure 5.1 Radiation source In order to do accelerated terrestrial SER measurements, a radiation source(s) is required that matches the energy spectrum of terrestrial cosmic rays. This can be accomplished by a broad-spectrum beam or by using multiple mono-energetic beams. For more information on the terrestrial energy spectrum, see JESD89. 5.1.1 Flux density Beam calibration requirements: A calibration for beam energy and flux shall be run prior to the first test and at the end of the last test. If the beam fl