1、JEDEC STANDARD Measurement and Reporting of Alpha Particle and Terrestrial Cosmic Ray-Induced Soft Errors in Semiconductor Devices JESD89A (Revision of JESD89, August 2001) OCTOBER 2006 (Reaffirmed: JANUARY 2012) JEDEC SOLID STATE TECHNOLOGY ASSOCIATION NOTICE JEDEC standards and publications contai
2、n material that has been prepared, reviewed, and approved through the JEDEC Board of Directors level and subsequently reviewed and approved by the JEDEC legal counsel. JEDEC standards and publications are designed to serve the public interest through eliminating misunderstandings between manufacture
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7、d to JEDEC at the address below, or refer to www.jedec.org under Standards and Documents for alternative contact information. Published by JEDEC Solid State Technology Association 2012 3103 North 10th Street Suite 240 South Arlington, VA 22201-2107 This document may be downloaded free of charge; how
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9、oduced without permission. For information, contact: JEDEC Solid State Technology Association 3103 North 10th Street Suite 240 South Arlington, VA 22201-2107 or refer to www.jedec.org under Standards-Documents/Copyright Information. JEDEC Standard No. 89A -i- MEASUREMENT AND REPORTING OF ALPHA PARTI
10、CLE AND TERRESTRIAL COSMIC RAY INDUCED SOFT ERRORS IN SEMICONDUCTOR DEVICES CONTENTS Page Foreword .iii Introductioniii 1 Scope .1 2 Terms and definitions 1 3 Test equipment and software requirements5 3.1 Test equipment.5 3.2 Test plan.6 3.3 Test conditions.8 3.4 Setup procedure .10 3.5 General test
11、ing specifications 11 3.6 Data collection .11 3.7 Considerations for testing non-memory components 11 4 Real-time (unaccelerated and high-altitude) test procedures .15 4.1 Background.15 4.2 Test facilities and equipment 16 4.3 Testing procedures18 4.4 Differences in real-time ser tests and actual en
12、d-user observed fail rates.20 4.5 Final report20 5 Accelerated alpha particle test procedure 22 5.1 Background.22 5.2 Alpha particle environment.23 5.3 Packaging for alpha particle testing23 5.4 Alpha particle sources.24 5.5 Basic test methodology .26 5.6 Test procedure and results 27 5.7 Interferen
13、ces30 5.8 Final report32 6 Accelerated terrestrial cosmic ray test procedures.33 6.1 Background.33 6.2 Test facilities.34 6.3 Basic test methodology .34 6.4 Basic test procedure 34 6.5 Beam parameters.35 6.6 Fundamental quantities: seu cross-section and seu rate36 6.7 Interferences42 6.8 Final repor
14、t43 JEDEC Standard No. 89A -ii- MEASUREMENT AND REPORTING OF ALPHA PARTICLE AND TERRESTRIAL COSMIC RAY INDUCED SOFT ERRORS IN SEMICONDUCTOR DEVICES CONTENTS (contd) Page 7 Accelerated thermal neutron test procedures .44 7.1 Background.44 7.2 The terrestrial thermal neutron environment.46 7.3 Packagi
15、ng for thermal neutron testing 46 7.4 Thermal neutron sources.47 7.5 Basic test methodology .49 7.6 Test procedure and results 49 7.7 Interferences52 7.8 Final report53 Annexes A (normative) Determination of terrestrial neutron flux.55 B (normative) Counting statistics 70 C (normative) Real-time tes
16、ting statistics71 D (informative) The alpha particle environment .75 E (informative) Neutron and proton test facilities .79 F Bibliographic References82 G Differences Between JESD89A and JESD89 84 JEDEC Standard No. 89A -iii- Foreword This specification defines the standard requirements and procedur
17、es for terrestrial soft error rate (SER) testing of integrated circuits and reporting of results. Both real-time (unaccelerated) and accelerated testing procedures are described. At terrestrial, Earth-based altitudes, the predominant sources of radiation include both cosmic-ray radiation, dominated
18、by high- and low-energy neutron-induced reactions, and alpha-particle radiation from radioisotopic impurities in the package and chip materials. An overall assessment of a devices SER is complete, only when an unaccelerated test is done under actual use conditions, or accelerated SER data for the al
19、pha-particle component, the high-energy cosmic-radiation component, and if necessary, the thermal neutron component (see 7 for details) has been obtained and extrapolated to the use conditions. Annexes D and E are informative; Annexes A, B, and C are normative. Introduction Soft errors are nondestru
20、ctive functional errors induced by energetic ion strikes. Soft errors are a subset of single event effects (SEE), and include single-event upsets (SEU), multiple-bit upsets (MBU), single-event functional interrupts (SEFI), single-event transients (SET) that, if latched, become SEU, and single-event
21、latchup (SEL) where the formation of parasitic bipolar action in CMOS wells induce a low-impedance path between power and ground, producing a high current condition (SEL can also cause latent and hard errors). In general, soft errors may be induced by alpha particles emitted from radioactive impurit
22、ies in materials nearby the sensitive volume, such as packaging, solder bumps, etc., and by highly ionizing secondary particles produced from the reaction of both thermal and high-energy neutrons with component materials. There are two fundamental methods to determine a products SER. One is to test
23、a large number of actual production devices for a long enough period of time (weeks or months) until enough soft errors have been accumulated to give a reasonably confident estimate of the SER. This is generally referred to as a real-time or unaccelerated SER testing. Real-time testing has the advan
24、tage of being a direct measurement of the actual product SER requiring no intense radiation sources, extrapolations to use conditions, etc. (provided the test is performed in a building location similar to the actual use environment - see A.5). However, real-time testing does require an expensive sy
25、stem capable of monitoring hundreds or thousands of devices in parallel, for long periods of time. The other method commonly employed to allow more rapid SER estimations and to clarify the source of errors is accelerated-SER (ASER) testing. In ASER testing, devices are exposed to a specific radiatio
26、n source whose intensity is much higher than the ambient levels of radiation the device would normally encounter. ASER allows useful data to be obtained in a fraction of the time required by unaccelerated real-time testing. Only a few units are needed and complete evaluations can often be done in a
27、few hours or days instead of weeks or months. The disadvantages of ASER are that the results must be extrapolated to use conditions and that several different radiation sources must be used to ensure that the estimation accounts for soft errors induced by both alpha particle and cosmic-ray-neutron e
28、vents. JEDEC Standard No. 89A -iv- JEDEC Standard No. 89A Page 1 MEASUREMENT AND REPORTING OF ALPHA PARTICLE AND TERRESTRIAL COSMIC RAY INDUCED SOFT ERRORS IN SEMICONDUCTOR DEVICES (From JEDEC Board ballot JCB-06-63, formulated under the cognizance of the JC-13.4 Subcommittee on Radiation Hardness:
29、Assurance and Characterization.) 1 Scope This standard specification covers soft errors due to alpha particles and low and high-energy atmospheric neutrons. 3 covers test methods and issues common to all test types, 4 covers real-time or unaccelerated measurements, 5 covers accelerated soft error ra
30、te test procedures related to alpha particles, 6 covers accelerated soft error rate test procedures related to high-energy neutron reactions (1 MeV), and 7 covers test procedures for thermal neutron reactions with 10B. This specification defines the standard requirements and procedures for terrestri
31、al soft error rate (including real-time and accelerated) testing of integrated circuits and a standardized methodology for reporting the results of the tests. The procedures apply to components including memory and logic. Warning: These tests may involve hazardous materials, operations, and equipmen
32、t. It is the responsibility of the user of this test method in consultation with radiation safety personnel to establish the appropriate safety and health practices and to determine the applicability of regulatory limitations prior to use. 2 Terms and definitions ATE: Automatic test equipment compon
33、ent: A packaged die or integrated circuit. NOTE This may be either a test vehicle or an actual product. collected charge: The charge collected by a particular device node during the passage of a particle. NOTE The collected charge is dependent on the geometry and doping of the node, the particle mas
34、s, energy, and trajectory, and the density and type of material in the volume being penetrated by the incident radiation. critical charge: The minimum amount of collected charge that will cause a device node to change state. device, electronic: synonymous with component or microcircuit JEDEC Standar
35、d No. 89A Page 2 2 Terms and definitions (contd) differential flux: The time rate of fluence per unit energy, the rate of the quantity of radiation, particle fluence, per unit area incident on a surface per unit energy. NOTE 1 Differential flux is usually expressed in particles per unit area per uni
36、t energy per unit time, e.g., n/(cm MeV hr). NOTE 2 The term differential flux in this standard is synonymous with spectral flux density used in other publications. DUT: Device under test. ECC: Error correction code, sometimes called error detection and correction (EDAC). FITs: Failures in time; the
37、 number of failures per 109device-hours. fluence (of particle radiation incident on a surface): The total amount of particle radiant energy incident on a surface in a given period of time, divided by the area of the surface. NOTE This fluence is usually expressed in particles per unit area (e.g., N/
38、cm2). flux: The time rate of flow of particle radiant energy incident on a surface, divided by the area of that surface. NOTE 1 Flux is usually expressed in particles per unit area, per unit time (e.g., N/cm2h). NOTE 2 The term “flux” is used in this standard whereas other standards might use the te
39、rm “flux density” for the same meaning. hard error: An irreversible change in operation that is typically associated with permanent damage to one or more elements of a device or circuit (e.g., gate oxide rupture, destructive latch-up events).NOTE The error is “hard” because the data is lost and the
40、component or device no longer functions properly, even after power reset and re-initialization. multiple-bit upset (MBU): A multiple-cell upset in which two or more error bits occur in the same word. NOTE An MBU cannot be corrected by a simple single-bit ECC. multiple-cell upset (MCU): A single even
41、t that induces several bits in an IC to fail at one time. NOTE The error bits are usually, but not always, adjacent. process: A combination of people, procedures, methods, machines, materials, measurement equipment, and/or environment for specific work activities to produce a given product or servic
42、e. NOTE For the purposes of this standard the process is specifically the manufacturing steps and methodologies used to fabricate an IC. JEDEC Standard No. 89A Page 3 2 Terms and definitions (contd) product: A component or service sold to satisfy a particular customer application. NOTE For the purpo
43、ses of this standard a product is a complete integrated circuit sold to satisfy a particular customer application. radiation: Energy emitted in the form of electromagnetic waves or moving nuclear particles. NOTE For purposes of this standard the primary radiation of concern is ionizing and includes
44、protons, electrons, alpha particles, and nuclear reaction products. real-time soft error rate (RTSER): Soft error rate measurement technique under a naturally occurring alpha particle and neutron environment using a large number of devices to obtain a statistically significant error count. This is i
45、n contrast to an accelerated SER test where an intense radiation source is used on a single, or small number of devices. RTSER error counts can be increased by using a higher neutron flux at higher altitudes, but for the purposes of this specification, the term accelerated is reserved for intense ra
46、diation sources that do not occur in natural terrestrial environments. System SER (SSER) is another term that is often used and is considered synonymous with RTSER. sensitive volume: A region, or multiple regions, containing nodes whose states can be changed by incident radiation. NOTE The sensitive
47、 volume is determined by the angle of the incident radiation, the mass and energy of the incident particles, and the density and type of material in the volume being penetrated by the incident radiation. single-event effect (SEE): Any measurable or observable change in state or performance of a micr
48、oelectronic device, component, subsystem, or system (digital or analog) resulting from a single energetic particle strike. NOTE Single-event effects include single-event upset (SEU), multiple-bit upset (MBU), multiple-cell upset (MCU), single-event functional interrupt (SEFI), single-event latch-up
49、(SEL), single-event hard error (SHE) and single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR). single-event functional interrupt (SEFI): A soft error that causes the component to reset, lock-up, or otherwise malfunction in a detectable way, but does not require power cycling of the device (off and back on) to restore operability, unlike single-event latch-up (SEL), or result in permanent damage as in single-event burnout (SEB). NOTE A SEFI is often associated with an upset in a control bit or register. JEDEC Standard No. 89A Page 4 2
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