KS C 7106-2007 Terms and definitions of FED《FED术语和定义》.pdf

1、 KS C 7106 KSKSKSKSSKSKSKS KSKSKS SKSKS KSKS SKS KS FED KS C 7106 : 2007(2012 ) 2007 3 23 http:/www.kats.go.krKS C 7106 : 2007 : ( ) ( ) ( ) : (http:/www.standard.go.kr) ： ：2007 3 23 ：2012 12 31 2012-0854 ： ： ( 02-509-7294) (http:/www.kats.go.kr). 10 5 , . KS C 7106 : 2007 (2012 ) FED Terms and defi

2、nitions of FED 1 (Field Emission Display, FED) . 2 . , . KS C IEC 61988-2-1:2003, 2 1： KS C IEC 61988-2-2:2003, 2 2： 3 . . 3.1 (gas permeability) , 3.2 (evacuation during baking) 3.3 (aperture ratio) 3.4 (drying process) FED KS C 7106 : 2007 2 3.5 (gate) , , 3.6 (gate voltage) 3.7 (getter) 3.8 (gett

3、er activation) 3.9 (gray scale, grey scale) . 3.10 (high vacuum sealing) FED 3.11 (space charge) 3.12 (space charge effect) 3.13 (metal back layer) , , 3.14 (photoelectron emission) , 3.15 (driving waveform) 3.16 , (uniformity - Long Range Uniformity ; LRU, Short Range KS C 7106 : 2007 3 Uniformity

4、; SRU) , 3.17 (grid) 3.18 (substrate) (front plate) (rear plate) , 3.19 (off-cell) 3.20 (cold cathode) 2 3.21 (leakage current) FED (gate current) 3.22 (active matrix FED, AM-FED) 3.23 (sub-pixel) . 3.24 (sub-pixel arrangement) Red(R), green(G), blue(B) 3.25 (sub-pixel pitch) 3.26 (data electrode) 3

5、.27 (data pulse) KS C 7106 : 2007 4 3.28 (driver) 2 (IC chip) 3.29 (dispenser) (paste) 3.30 - (micro-tip field emitter) 3.31 (micro-filter) 3.32 (mesh) 3.33 (contrast ratio, CR) (KS C IEC 61988-2-1 6.3 KS C IEC 61988-2-2 6.1 ) 3.34 (, bright defect) 3.35 (module) FED 3.36 (module power consumption)

6、. , 3.37 (tubeless packaging) , 3.38 (threshold field) , KS C 7106 : 2007 5 3.39 (sealing) 3.40 (sealing process) 3.41 (sealing line) (sealant) (frit path) 3.42 (sealant) 3.43 (Thin Film Transistor, TFT) (active layer) (Field Effect Transistor, FET) 3.44 (active pixel ratio) 3.45 (luminance efficien

7、cy) . , (lumen/watt) 3.46 (brightness) , 3.47 (evacuation) FED 3.48 (exhaust tube) 3.49 (seal-off) KS C 7106 : 2007 6 3.50 (tip-off) 3.51 (white chromatic uniformity) 3.52 (bus electrode) 3.53 NTSC (NTSC color gamut) (NTSC, National Television Standard Committee) 3.54 (volcano-type emitter) 3.55 (bl

8、ack matrix) (color purity) 3.56 (non evaporable getter) 3.57 (comb-type emitter) 3.58 (tetrode-type display) (focusing electrode) 3.59 (avalanche breakdown) ( , ) . 3.60 (triode cathode) KS C 7106 : 2007 7 3.61 (triode-type display) , 3.62 (rise time) FED - (turn-on) 3.63 (color gamut) Red(R), green

9、(G), blue(B) 3.64 (color temperature) . 3.65 (chromatic uniformity) 3.66 (line defect) 3.67 (sintering) 3.68 (power consumption) 3.69 (baking) (outgassing) 3.70 (firing) , 3.71 (firing temperature) , 3.72 (passive matrix FED, PM-FED) XY KS C 7106 : 2007 8 3.73 (lifetime) / 3.74 (column electrode) 3.

10、75 (lateral field emitter) 3.76 (duty ratio) 3.77 (scan driver) 3.78 (scan electrode) 3.79 (scan pulse) 3.80 (screen luminance efficiency) (光束 ) 3.81 (screen power consumption) 3.82 (spacer) , , 3.83 (spacer placement) KS C 7106 : 2007 9 3.84 (spacer charging) 2 . 2 3.85 (spacer alignment) 3.86 (spi

11、n rotor gauge) (tube) 3.87 (Spindt-type emitter) 1968 SRI(Stanford Research Institute) Capp. Spindt (E-gun evaporator) 3.88 (viewing angle) 3.89 (seasoning) / 3.90 (wedge-type emitter) 3.91 (, anode) 3.92 (anode voltage) 3.93 - (anode-to-cathode gap) ( ) ( ) 3.94 (anode pad) KS C 7106 : 2007 10 3.95

12、 (arching) 3.96 (anti arcing insulation film) 3.97 (dark defect) 3.98 (anode voltage) 3.99 (quantum tunneling) ( ) 3.100 (addressability) 3.101 (addressing) , 3.102 (stain, mura) 3.103 (energy barrier) (Fermi) 3.104 (emitter) 3.105 (emitter lifetime) 3.106 (aging) KS C 7106 : 2007 11 3.107 (thermal

13、stress) 3.108 (thermionic emission) 3.109 (thermal expansion) 3.110 (degradation constant) , 3.111 (image sticking) 3.112 (cone-type emitter) 3.113 (glass frit) 3.114 (effective screen area, active screen area) 3.115 (effective emission area) 3.116 (effective screen area) 3.117 (cathode luminescence

14、) 3.118 (cathode ray tube) KS C 7106 : 2007 12 3.119 (response time) / 3.120 (ion bombardment) 3.121 (diode-type display) 3.122 (image retention) 3.123 (work function) (Fermi) 3.124 (emissive display) 3.125 (image smear) 3.126 (residual gas) 3.127 (image sticking) 3.128 (low melting point glass) 500

15、 PbO 3.129 (resistive layer, ballast layer) 3.130 (field emission) KS C 7106 : 2007 13 3.131 (field emission display, FED) 3.132 (field emitter) 3.133 (field emitter array) 3.134 (field conversion factor) (Vg) (E) 3.135 (electric field breakdown) , 3.136 (interconnection pad) 3.137 (interconnection

16、pad spacing) 3.138 (interconnection pad width) 3.139 (interconnection pad pitch) 3.140 (current driving) ( ) . 3.141 (current density) 3.142 (front plate) (rear plate) KS C 7106 : 2007 14 3.143 (full-white luminance) 3.144 (voltage driving) . 3.145 (transition metal) , , , 3.146 (electron trajectory

17、) ( ) 3.147 (electron beam) 3.148 (electron source) ( ) 3.149 (electron gun) ( ) 3.150 (electron back-scattering) 3.151 (misalign) ( ) ( ) 3.152 (anti static film) 3.153 (intermediate layer) (Al metal-back) 3.154 (evaporable getter) , KS C 7106 : 2007 15 3.155 (direct current, DC) 3.156 (vacuum gaug

18、e) , 0 mmHg . 3.157 (vacuum tube) 3.158 (vacuum in-line packaging) 3.159 (vacuum level) , 3.160 (vacuum laser sealing) 3.161 (vacuum conductance) , 3.162 (vacuum pump) , 3.163 (focusing electrode) ( ) 3.164 (focusing voltage) 3.165 (maximum luminance, peak luminance) KS C 7106 : 2007 16 3.166 (minimum luminance) (0 Gray level) 3.167 (, cathode) FED 3.168 (on-cell) 3.169 (contrast ratio)