KS C IEC 60747-8-2002 Discrete devices－Part 8：Field－effect transistors《半导体器件 第8部分 场效应晶体管》.pdf

1、KS C IEC 60747-8KSKSKSKSSKSKSKS KSKSKS SKSKS KSKS SKS KS 8： KS C IEC 60747-8 : 2002(2012 ) 2002 9 25 http:/www.kats.go.krC IEC 60747 8： 2002 : ( ) ( ) ( ) : (http:/www.standard.go.kr) ： ：2002 9 25 ：2012 12 31 2012-0854 ： ： ( 02-509-7294) (http:/www.kats.go.kr). 10 5 , . ICS 31.080.30 KS C IEC 8： 607

2、47 8： 2002(2012 ) Discrete devices Part 8： Field effect transistors 1984 IEC60747 8(1984) Semiconductor devices Part 8： Field-effect transistors . 1 1. . A： (junction gate type) B： (insulated gate depletion type) C： (insulated gate enhancement type) 2. . (, , P N 2 1. 1.1 N (N-channel field-effect t

3、ransistor) N 1.2 P (Pchannel fieldeffect transistor) P ) C IEC 60747 8： 2002 2 1.3 (Junctiongate fieldeffect transistor) PN ( ) 1.4 - (Insulatedgate fieldeffect transistor) 1.5 (Metaloxidesemiconductor fieldeffe ct transistor) 1.6 (Depletion type field-effect transistor) 0 . . 1.7 (Enhancement type

4、field-effect transistor) 0 0 . . 1.8 3 (Triode field-effect transistor) , , “ (field effect triode)” . 1.9 4 (Tetrode field-effect transistor) , , “ (field effect tetrode)” . 2. 2.1 (Source region of a fieldeffect transist or) 2.2 (Drain region of a field-effect transist or) 2.3 (Gate region of a fi

5、eldeffect transisto r) , 2.4 (Depletion mode operation) 0 2.5 (Enhancement mode operation) 0 2.6 (Channel) 2.7 (Substrate) 2.7.1 ( ) /( ) , , 2.7.2 ( ) , , 3. , . C IEC 60747 8： 2002 3 3.1 “” “” “ ” ( ) , “ ” ( ) . 3.2 ( ) (VGS(TO) 3.3 ( ) (VGSoff) 3.4 ( ) 3.5 ( ) 3.6 a.c. 3.7 (rGS) d.c. 4. 4.1 IEC

6、60747 1, 2., 3., 4. . 4.2 IEC 60747 1, , 2.2.1 . D, d = (drain) G , g = (gate) S, s = (source) B, b ; U, u = (substrate) T; th ; (TO) = (threshold) 4.3 4.3.1 (d.c.) VDS (d.c.) VGS ( ) VGS(OFF); VGSoff ( ) VGST; V(th); V(TO) (d.c.) VGSF (d.c.) VGSR (d.c.) VGD (d.c.) VSB; VSB (d.c.) VDB; VDB (d.c.) VG

7、B; VGB ( ) VG1-G2C IEC 60747 8： 2002 4 V(BR)GSS4.3.2 (d.c) ID IDSX ( ) IDSR (VGS 0) IDSS (d.c.) IS ISDX (VGD 0) ISDS (d.c.) IG IGF ( ) IGDO ( ) IGSO ( ) IGSS ( ) IGSS ( ) IGSX IB; IL4.3.3 (d.c.) PDS4.3.4 ( ) (VDS Vds 0) rDS; rdsrGS; rgsrGD; rgdrGSS; rgss rDS(ON); rds(on); rDSon rDS(OFF); rds(off); r

8、DSoff ( a.c. ) Cgso ( a.c. ) Cgdo ( a.c. ) CdsoC IEC 60747 8： 2002 5 ; ( a.c. ) Ciss; C11ss ; ( a.c. ) Coss; C22ss giss goss a.c. Crss; C12ss ( a.c. ) Cods; C22ds4.3.5 y (23 1, 2, 3 ) yis Re(yis) jwCisy11s Re(y11s) jwC11s yrs Re(yrs) jwCrsy12s Re(y12s) jwC12s yfs Re(yfs) jIm(yfs)y21s Re(y21s) jIm(y2

9、1s) yos Re(yos) jwCosy22s Re(y22s) jwC22s |yrs| ; |y12s| yrs ; y12s |yfs| ; |y21s| yfs; y21s - ( ) ggs ( ) ggd ( ) gds ( ) gms; gm ( ) Cgs ( ) Cgd ( ) Cds4.3.6 GP; GpC IEC 60747 8： 2002 6 ( ) fyfs Vn F aID rds td(on) td(off) tr tf ton toff ( 4 ) ton td(on) trtoff td(off) tf 1 2 3 y C IEC 60747 8： 20

10、02 7 4 4.3.7 ( ) ( ) IG1 IG2 . 0 IDSS1/IDSS2 . gfs1 gfs2 . gfs1/gfs2 . VGS1 VGS2 . |(VGS1 VGS2)|t3 1. 1.1 . A % 100 90 10 0 0 10 90 100 % t t trtontd(on)td(off)tofftfC IEC 60747 8： 2002 8 B C 1.2 . 1.3 ( ) ( ) . IEC 60747 1 1. . C IEC 60747 8： 2002 9 A B C2. () 2.1 2.1.1 , (Tstg) 2.1.2 , , (Tamb Tre

11、f) 2.2 ( Ptot) 2.2.1 ( ) (Ptotmax). / . 2.2.1.1 Ptotmax (Tamb Tcase) ( MOSFET ) 2.2.1.2 a) (Tvjmax) 2.2.1.2 b) (Ptotabs). Tvjmax Ptotabs Rth Zth . (3. ) 2.2.2 MOSFET , .(PtotMmax) PtotMmax ( ) 2.2.3 MOSFET , , (SOAR) 2.3 25 IEC 60747 1 5. . 2.3.1 2.3.2 2.3.3 2.3.4 ( ) 2.3.5 ( ) 2.3.6 2.3.6.1 (ID) 2.

12、3.6.2 MOSFET , (IDM) 2.3.7 2.3.8 ( MOSFET ) C IEC 60747 8： 2002 10 A B C d.c. 2.3.8.1 ( )(IS(B) 2.3.8.2 (ISM(B) 2.4 . 3. 25 . IEC 60747 1, 5. . 3.1 3.1.1 25 25 . 3.1.2 25 3.1.3 0 (IDSS) 25 0 3.1.4 (ID) 25 3.1.5 (VGSoff) , 3.1.6 (VGS(TO) 25 0 10 , 3.1.7 (Ciss) , , a.c. , C IEC 60747 8： 2002 11 A B C3

13、.1.8 (goss, Coss) , , a.c. , 3.1.9 ( )(Crss) , , a.c. , 3.1.10 (gfs) 3.1.10.1 ( MOSFET ) , , 3.1.10.2 MOSFET 25 , 3.1.11 (Vn, F) , , , 3.1.12 ( MOSFET ) 3.1.12.1 (VC(B) (IS(B), VGS 0 3.1.12.2 (trr(B) 3.1.13 MOSFET , (Rth(j amb) (Rth(i case). 3.1.14 MOSFET (Zth(j amb) (Zth(i case). 3.2 3.2.1 25 , 25

14、, 3.2.2 25 3.2.3 0 (IDSS) 25 , C IEC 60747 8： 2002 12 A B C 0 3.2.4 (IDSX) 25 3.2.5 (VGSoff) 3.2.6 (VGS(TO) 25 0 10 3.2.7 y 3.2.7.1 FET yis , . yos , . yfs , . , (3.2.7.2. ) yrs , . 3.2.7.2 MOSFET , yfs (gfs) 25 , 3.2.8 (F ) . 3.2.9 MOSFET (Rth(j-amb) (Rth(i-case) 3.2.10 MOSFET , (Zth(j-amb) (Zth(i-

15、case) 3.3 3.3.1 25 , 25 , 3.3.2 25 , C IEC 60747 8： 2002 13 A B C 3.3.3 (VGSoff) 3.3.4 (VGS(TO) 25 , , 0 10 3.3.5 3.3.5.1 25 ( MOSFET ) 3.3.5.2 (rDS(on) 25 3.3.6 a) 3.3.1 b) 3.3.5 3.3.7 a) 3.3.1 b) 3.3.5 3.3.8 a) 3.3.1 b) 3.3.5 , 3.3.9 ( 5 ) . a) b) c) , , d) VGS(off-state) A , B , , C . e) VGS(on-state) . td(on), tr, td(off), tf td(off) (toff) , toff (VDS(on) C IEC 60747 8： 2002 14 A B C . 3.3.10 ( MOSFET ) 3.3.10.1 (VD(B) (IS(B), VGS 0 . 3.3.10.2 (trr(B) 3.3.10.3 (ISRRM) . 3.3.11 MOSFET (Rth(j amb) (Rth(i case) 3.3.12 MOSFET (Zth(j-amb) (Zth(i case) 3.4 3.4.1 25 25 , 3.4.2 ( ) , 3.4.3