KS C IEC 60759-2009 Standard test procedures for semiconductor X-ray energy spectrometers《半导体X射线能谱仪的标准试验程序》.pdf

1、 KSKSKSKSKSKSKSK KSKSKS KSKSK KSKS KSK KS KS C IEC 60759 X- KS C IEC 60759:2009 2009 12 30 http:/www.kats.go.krKS C IEC 60759:2009 : ( ) ( ) () KEPIC ( ) ：(IEC/TC45/SC45B ISO/TC85/SC2) () ( ) () ( ) () () : (http:/www.standard.go.kr) ： ：2009 12 30 2009-0963 ： ：(IEC/TC45/SC45B ISO/TC85/SC2) ( 02-509-

2、7270) (http:/www.kats.go.kr). 10 5 , . KS C IEC 60759:2009 i 1983 1 IEC 60759, Standard test procedures for semiconductor X-ray energy spectrometers 1991 Amendement 1 , . . , , . , , . KS C IEC 60759:2009 X- Standard test procedures for semiconductor X-ray energy spectrometers 1 X- . - / . - . 5. .

3、2 , . IEC Publication 333： , IEC Publication 340： , IEC Publication 656： X . . X- , X- X- E . X- . . (m) 12.4 10 10E 1(keV) () 12.4 E 1(keV) 3 ( ) (ADC) (IEV 391-11-36) ( ) ( ) , (IEC 340) (BLR) KS C IEC 60759:2009 2 ( ) (IEC 340) (IEV 391-11-05) ( ) ( ) (IEV 391-10-50) ( ) - ( ) ( ) ( : ) , (mobile

4、 hole)(IEV 391-10-53) ( ) 10 % 90 % (IEV 391-10-59) , (jargon) ： 1) (high pass filter) ( ) 2) . (IEV 391-05-03). P- N- (IEV 391-09-44) CR-RC . 6 . (crest factor)( ) 1) 2) (IEC 340) KS C IEC 60759:2009 3 D.C. ( ) ( ) (IEV 391-10-55) 1/e (IEC 340) ( ) ( ) (jargon) CR (IEC 340) ( ) (FWHM)( ) - FWHM ( )

5、(IEC 340) ( )( ) (IEC 340) ( ) (IEC 340) ( ) - , 2 . ( ) 1/5 1/2 1/5 1/2 ( : ). (FWHM) , 1/2 2 , 1/2 (IEV 391-15-08). KS C IEC 60759:2009 4 1/10 (FWTM) 1/2 1/5 1/2 (IEC 340). FWFM(1/5 ) FWHM( ) FWTM(1/10 ) 1 , ( ) ( ) (IEC 340) (INL)(%) (IEC 340) ( )( ) RC RC (IEC 340) (IEC 340) (I- ) (IEV 391-05-02

6、) . , (IEV 391-10-57) (IEV 391-08-06) ( ) . (IEV 391-10-42)(IEC 340). (p-n ) ( ) KS C IEC 60759:2009 5 ( ) (drift) P- (IEV 391-09-45) ( ) (IEC 340) ( ) (IEC 340) (MCA) ( , ) 1 (IEV 391-11-32) ( ) (IEC 340) ( ) ( ) . , - (IEC 340) (paralyzable system) ( ) ( ) KS C IEC 60759:2009 6 (pile-up)( ) . (IEV

7、 391-15-15). (pile-up) ( ) p-i-n a p n - (IEC 340) (td) , 90 % 10 % ( CR-RC , td 3.36 CR .) (IEV 391-11-02) (tr) , 10 % 90 % (RC , tr 2.2 RC . CR-RC , RC , tr 0.57 RC .) , ( ) ( ) (IEV 391-08-13) - ( ) - - ( ) 0 ( ) , ( ) ( , ) KS C IEC 60759:2009 7 X- . , . ( X- ) X- . . (IEV 391-09-42) (sweep-out)

8、 , ( ) ( ) ( ) ( ) (IEC 596) , (IEV 391-09-47) ( )( ) ( ) X- 4 A . Ab AE E . E AMn Mn K At , , a, b KS C IEC 60759:2009 8 B C Cd Cc Ceff Cf Ct C1 Mn KX- 5.4 keV 5 C2 4.5 keV C1 C3 1 keV C1 FWHM AE FWHM AN FWHM AQ FWHM DE FWHM DN FWHM DQ FWHM Emax N ( ) OE FWHM ON FWHM SE FWHM SN FWHM TE FWHM TN FWHM

9、 TQ FWHM E - (hole-electron pair) e EF eni eno eqi F , ( , , ) ( ) GB ( ) i I Id Io INL . KS C IEC 60759:2009 9 k K FWHM FWHM LD Li LI N Navg - NB Np Mn KX- Mn ( ) Nx - X P1 5.4 keV Mn KX- P2 4.5 keV Mn KX- P3 1 keV Mn KX- Q R Rc- Cc Rf Cf ( ) ri RL ro SL - SM eV/ MCA ADC/ T tc td te tp tr (10 % 90

10、%) c CR d tw V Va Vd VD Vp Cc WE55Fe E X (MCA) Z Z0 X- SE FWTM SN KS C IEC 60759:2009 10 FWTM TE FWTM OE FWTM TN FWTM 5 5.1 . 1 . 2 . . X- , , X- . . , X- . - (MCA) , , X- - . MCA (ADC) . X- ( , ) . . . , HgI2 CdTe, GaAs . Si Ge , . . , , . . , , X- . 1 . X- . 2 K . , ( ) , . X- , 5.2 . KS C IEC 60759:2009 11 5.3 5.4 . . , - . “ ” , , . 5.5 . MCA . d.c. . , d.c. . , . 5.2 X- ( ) , FWHM 2.35 X- . E , - . 77 K 3.8 eV/ , 3.0 eV/ . , . F( ) , FWHM2.35 . . Si Ge F 0.05 0.15 . (trapping) , 2 F . . 5.3 . (FET) ( 1 ). FET FET . FET , FET (S/n) . S/n