KS D ISO 15632-2012 Microbeam analysis－Instrumental specification for energy dispersive X-ray spectrometers with semiconductor detectors《微光束分析 带半导体探测器的能量发散X射线分光仪的仪器规范》.pdf

1、 KSKSKSKSKSKSKSK KSKSKS KSKSK KSKS KSK KS KS D ISO 15632 X KS D ISO 15632:2012 2012 12 7 http:/www.kats.go.krKS D ISO 15632:2012 : ( ) ( ) () () ( ) : (http:/www.standard.go.kr) ： ：2004 12 30 ：2012 12 7 2012-0685 ： ： ( 02-509-7274) (http:/www.kats.go.kr). 10 5 , . KS D ISO 15632:2012 i ii iii 1 1 2

2、.1 3 2 3.1 2 3.2 2 3.3 .2 3.4 3 A( ) 4 B( ) L/K .7 9 KS D ISO 15632:2012 ii , X , X (EDS) , (1 keV ) . Mn K ( , FWHM： full width at half maximum) . K . (background) . Fe55 (shelf) (valley) . X . , . EDS . EDS . , . . KS Q ISO/IEC 17025 , . . KS D ISO 15632:2012 iii 2002 1 ISO 15632, Microbeam analys

3、is Instrumental specification for energy dispersive X-ray spectrometers with semiconductor detectors , . KS D ISO 15632:2012 X Microbeam analysis Instrumental specification for energy dispersive X-ray spectrometers with semiconductor detectors 1 , , X . . (EPMA) (SEM) . . 2 . 2.1 , KS D ISO 18115 .

4、2.1 X , X , X . 2.2 2.3 2.4 KS D ISO 15632:2012 2 2.5 2.6 2.7 (background) (bremsstrahlung) 2.8 (instrumental background) , . 3 3.1 . . ( ), , , ( , ) . , , . 3.2 Mn K , A . 1 keV X K . . A . (：1 000 counts/s). 3.3 55Fe . Mn K . 0.9 1.1 keV . , 0.9 1.1 keV 100 % . 1 . . 2 . . KS D ISO 15632:2012 3 3

5、.4 X . K L . 20 keV , X 35 (take-off angle： TOA) . 1 8 keV X 95 % . 2 35 , L/K 35 L/K ( B). KS D ISO 15632:2012 4 A ( ) A.1 K 55Fe , K (polytetrafluoroethylene)(PTFE, Teflon) (foil) . 55Fe 55Fe , . K PTFE CaF2 . A.2 PTFE 20 nm . 55Fe , Amersham Buchler 55Fe VZ 1977 . , X . A.3 , X . A.4 10 eV K K 10

6、 keV PTFE . . Mn K 15 keV (： 1 000 counts/s) 10 000 counts . A.5 55Fe , PTFE . PTFE K 100 . 1 eV( ) . (linear background) . 2 KS D ISO 15632:2012 5 5 . A.6 ( 3 4 ). (2 ) . ( ) . ( ) . eV . 5 . . . A.7 A.1 A.2 10 eV 55Fe 10 kV , 5 eV , 30 PTFE . A.1 55Fe K (104) (keV) KS D ISO 15632:2012 6 A.2 PTFE 1

7、0 keV K ： ： (keV) () KS D ISO 15632:2012 7 B ( ) L/K B.1 , , . B.2 20 kV . . 10 000 counts . B.3 L/K L/K . A K L . L/K . 5 . B.4 TOA35 L/K X TOA35 . L/K TOA35 L/K . B.1 B.2 . (Pouchou and Pichoir) XPP (MACs)6 . . TOA . TOA . L TOA 35 . KS D ISO 15632:2012 8 B.1 TOA 35 B.2 TOA 35 ( ) L/K(TOA)/L/K(35)

8、 L/K(TOA)/L/K(35) ( ) KS D ISO 15632:2012 9 1 KS Q ISO/IEC 17025, 2 KS D ISO 18115, 3 KS C IEC 60759, X- 4 ANSI/IEEE 759, Test Procedures for Semiconductor X-ray Energy Spectrometers 5 ASTM E 1508, Standard Guide for Quantitative Analysis by Energy Dispersive Spectroscopy 6 POUCHOU, J. L. and PICHOI

9、R, F. in K. F. J. Heinrich and D. E. Newbury(eds.) Electron Probe Quantitation, New York 1991, pp. 31 75 X 153787 1 92 3(13) (02)26240114 (02)262401489 http:/ Korean Agency for Technology and Standards http:/www.kats.go.kr KS D ISO 15632:2012KSKSKS SKSKS KSKS SKS KS SKS KSKS SKSKS KSKSKS Microbeam analysis Instrumental specification for energydispersive X-ray spectrometers withsemiconductor detectors ICS 71.040.99