KS D ISO 18115-2006 Surface chemical analysis－Vocabulary《表面化学分析 词汇》.pdf

1、KSKSKSKS SKSKSKS KSKSKS SKSKS KSKS SKS KS 2006 12 21 http:/www.kats.go.krKS D ISO 18115 KS D ISO 18115： 2006 (2011 )D ISO 18115： 2006 : ( ) ( ) ( ) : (http:/www.standard.go.kr) ： : 2003 8 30 ： 2006 12 21 : 2011 12 30 2011-0688 ： ： ( 02-509-72947) (http:/www.kats.go.kr). 10 5 , . D ISO 18115： 2006 i

2、1 1. 1 2. 1 3. 2 4. 2 5. 3 A() IEC 60050111 37 39 () 40 () 45 ICS 01.040.71； 71.040.40 KS D ISO 18115： 2006(2011 ) Surface chemical analysis Vocabulary 2001 1 ISO 18115 Surface chemical analysis Vocabulary . 1. . 2. AES Auger electron spectroscopy CDP compositional depth profile CMA cylindrical mirr

3、or analyser eV electron volt EELS electron energy loss spectroscopy EIA energetic-ion analysis EPMA electron probe microanalysis ESCA electron spectroscopy for chemical analysis FABMS fast atom bombardment mass spectrometry FWHM full width at half maximum GDS glow discharge spectrometry GDOES glow d

4、ischarge optical emission spectrometry GDMS glow discharge mass spectrometry HEISS high-energy ion-scattering spectrometry HSA hemispherical sector analyser IBA ion beam analysis LEISS low-energy ion-scattering spectrometry MEISS medium-energy ion-scattering spectrometry ptp peak-to-peak RBS Rutherf

5、ord backscattering spectrometry RFA retarding field analyser SAM scanning Auger microscope SDP sputter depth profile SEM scanning electron microscope SIMS secondary-ion mass spectrometry SNMS sputtered neutral mass spectrometry B ISO 11512： 2006 2 SSA spherical sector analyser TOF or ToF time of fli

6、ght TXRF total-reflection X-ray fluorescence spectroscopy X UPS ultra-violet photoelectron spectroscopy XPS X-ray photoelectron spectroscopy X 3. 3.1 . . 3.2 . . 3.3 . ( ) . 4. 4.1 (Auger electron spectroscopy：AES) 230 keV . X , , . X , . . 4.2 (dynamic SIMS) SIMS 1. SIMS SIMS . 2. 1016ions/m2 . 4.3

7、 (electron spectroscopy for chemical analysis：ESC A) AES XPS ( .) ESCA . X (XPS) , 1980 XPS . 4.4 (fast atom bombardment mass spectrometry：FAB MS) ( .) 4.5 (glow discharge mass spectrometry：GDMS) 4.6 (glow discharge optical emission spectrometry：G DOES) 4.7 (glow discharge spectrometry：GDS) GDOES GD

8、MS . D ISO 18115： 2006 3 4.8 (ion beam analysis：IBA) , , LEISS, MEISS, RBS IBA , 0.1 10 keV, 50 200 keV, 1 2 MeV . . 4.9 (secondary -ion mass spectrometry：SIMS) SIMS, SIMS SIMS , 1016ions/ m2 . 4.10 (sputtered neutral mass spectrometry：SNMS) , . 4.11 (static SIMS) SIMS SIMS 1016ions/m2 , . 4.12 X (t

9、otal reflection X-ray fluorescence spectrosc opy：TXRF) X X X 4.13 (ultra-violet photoelectron spectroscopy：UPS) ( , 21.2 eV 40.8 eV He I He II ). . 4.14 X (X-ray photoelectron spectroscopy：XPS) X X 1 486.6 eV Al K 1 253.6 eV Mg . Al X . X . 5. 5.1 (absorption coefficient, linear) (linear attenuation

10、 coefficient) 5.2 (absorption coefficient, mass), (attenuation coefficient, mass) (x) (/)(x) , (x) 0 /, (x) B ISO 11512： 2006 4 1. , x 2. x exp( x) . 3. ( ) ( ) . 5.3 (adventitious carbon referencing) C 1s . 284.6285.2 eV , C 1s 285.0 eV . 5.4 (altered layer) 4 keV O2 , 15 nm SiO2 , . 5.5 (analysis

11、area) 5.6 (analysis area) 5.7 (analysis volume) 3 5.8 (analysis volume) 3 5.9 (angle, critical) X , 5.10 (angle, glancing) . 5.11 (angle lapping) ( ), 1 . 5.12 (angle, magic) X 54.7 X . 5.13 (angle of emission) . 5.14 (angle of incidence) , . D ISO 18115： 2006 5 5.15 (angle of scattering) 5.16 AES(a

12、ngle-resolved AES：ARAES), AES(angle-depende nt AES) 5.17 XPS(angle-resolved XPS：ARXPS), XPS(angle-depende nt XPS) X 5 nm . 5.18 (angle, solid, of analyser) 5.19 (angle, solid, of detector) 5.20 (angle, take-off) 1. . 2. . 3. , . 5.21 (asymmetry parameter) X X L( ) L( ) = 1 1/2 (3/2)(sin2) 1 . . 5.22

13、 (atomic mixing) , , , , 5.23 (attenuation coefficient) x x , x 0 . x . , 1. x exp( /x) . 2. , EPMA . AES XPS . 5.24 (attenuation length) x x/l , x 0 l . x . , , , , 1. x exp( x/l) . 2. . B ISO 11512： 2006 6 . 5.25 (attenuation length, effective) 1 eV AES XPS . 5.26 (Auger de-excitation) a) , X b) ,

14、 . . 5.27 (Auger electron) 1. . . 2. . 5.28 (Auger electron spectrum) . , . 1. , 02 500 eV , , . . 2. . 5.29 (Auger electron yield) 1 5.30 (Auger neutralization) , . 5.31 (Auger parameter) . , 1. X X . 2. . 3. . 4. , D ISO 18115： 2006 7 . 5.32 (Auger parameter, initial state) = 3EB EK . EB EK . , ,

15、. 5.33 (Auger parameter, modified) , , X . , X . 5.34 (Auger process) , 1 , , . 5.35 (Auger process, interatomic) (localized) 5.36 (Auger transition) 1. 3 3 . , 2 ( , KLL LMM). V ( , LMV KVV). , ( , KL1L2). ( , L3M4,5M4,5, 1D). 2. ( , ) ( , LL VV K VVV). 3. ( , L1L2M) Coster-Kronig . ( , M1M2M3) , super Coster-Kronig . 5.37 (Auger transition rate) 5.38 (background, inelastic) 1