1、 IEC 60747-8 Edition 3.0 2010-12 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Discrete devices Part 8: Field-effect transistors Dispositifs semiconducteurs Dispositifs descrets Partie 8: Transistors effet de champ IEC 60747-8:2010 THIS PUBLICATION IS COPYRIGHT PROTECTED Copyrigh
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16、 22 919 02 11 Fax: +41 22 919 03 00 IEC 60747-8 Edition 3.0 2010-12 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Discrete devices Part 8: Field-effect transistors Dispositifs semiconducteurs Dispositifs descrets Partie 8: Transistors effet de champ INTERNATIONAL ELECTROTECHNICAL
17、 COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE XC ICS 31.080.30 PRICE CODE CODE PRIX ISBN 978-2-88912-279-0 Registered trademark of the International Electrotechnical Commission Marque dpose de la Commission Electrotechnique Internationale 2 60747-8 IEC:2010 CONTENTS FORE WORD 6 1 Scop e 8 2
18、 Normative references 8 3 Terms and definitions 9 3.1 Types of field-effect transistors 9 3.2 General terms 10 3.2.1 Physical regions (of a field-effect transistor). 10 3.2.2 Functional regions . 11 3.3 Terms related to ratings and characteristics 12 3.4 Conventional used terms 17 4 Letter symbols 1
19、7 4.1 General . 17 4.2 Additional general subscripts . 17 4.3 List of letter symbols 17 4.3.1 Voltage 17 4.3.2 Currents . 18 4.3.3 Power dissipation 18 4.3.4 Small-signal parameters 18 4.3.5 Other parameters 20 4.3.6 Matched-pair field-effect transistors 21 4.3.7 Inverse diodes integrated in MOSFETs
20、 21 5 Essential ratings and characteristics . 22 5.1 General . 22 5.1.1 Device categories 22 5.1.2 Multiple-gate devices . 22 5.1.3 Handling precautions . 22 5.2 Ratings (limiting values) 22 5.2.1 Temperatures . 22 5.2.2 Power dissipation (P tot ) 22 5.2.3 Safe operating area (SOA) for MOSFET only .
21、 22 5.2.4 Voltages and currents 23 5.3 Characteristics . 23 5.3.1 Characteristics for low-frequency amplifier . 23 5.3.2 Characteristics for high-frequency amplifier . 25 5.3.3 Characteristics for high and low power switching and chopper . 27 5.3.4 Characteristics for low-level amplifier 30 5.3.5 Ch
22、aracteristics for voltage-controlled resistor . 32 5.3.6 Specific characteristics of matched-pair field-effect transistors for low-frequency differential . 33 6 Measuring methods 34 6.1 General . 34 6.2 Verification of ratings (limiting values) 34 6.2.1 Voltages and currents 34 6.2.2 Safe operating
23、area . 40 6.2.3 Avalanche energy . 44 6.3 Methods of measurement 46 60747-8 IEC:2010 3 6.3.1 Breakdown voltage, drain to source (V (BR)DS* ) . 46 6.3.2 Gate-source off-state voltage (V GS(off) ) (type A and B), gate source threshold voltage (V GS(th) ) (type C) . 47 6.3.3 Drain leakage current (d.c.
24、) (I DS* )(type C), Drain cut-off current (d.c.) (I DSX ) (type A and B) . 48 6.3.4 Gate cut-off current (I GS* )(type A), Gate-leakage current (I GS* )(type B and C) 48 6.3.5 (Static) drain-source on-state resistance (r DS(on) ) or drain-source on- state voltage (V DS(on) ) . 49 6.3.6 Switching tim
25、es (t d(on) , t r , t d(off) , and t f ) 51 6.3.7 Turn-on power dissipation (P on ), turn-on energy (per pulse) (E on ) 52 6.3.8 Turn-off power dissipation (P off ), turn-off energy (per pulse) (E off ) 53 6.3.9 Gate charges (Q G , Q GD , Q GS(th) , Q GS(pl) ) 53 6.3.10 Common source short-circuit i
26、nput capacitance (C iss ) . 54 6.3.11 Common source short-circuit output capacitance (C oss ) . 55 6.3.12 Common source short-circuit reverse transfer capacitance (C rss ) . 56 6.3.13 Internal gate resistance (r g ) 57 6.3.14 MOSFET forward recovery time (t fr ) and MOSFET forward recovered charge (
27、Q f ) . 58 6.3.15 Drain-source reverse voltage (V DSR ) . 62 6.3.16 Small-signal short-circuit output conductance (type A, B and C) (g oss ) 62 6.3.17 Small-signal short-circuit forward transconductance (types A, B and C) 65 6.3.18 Noise (types A, B and C) (F, Vn) . 67 6.3.19 On-state drain-source r
28、esistance (under small-signal conditions) (r ds(on) ) 68 6.3.20 Channel-case transient thermal impedance (Z th(j-c) ) and thermal resistance (R th(j-c) ) of a field-effect transistor . 69 7 Acceptance and reliability 71 7.1 General requirements . 71 7.2 Acceptance-defining characteristics . 71 7.3 E
29、ndurance and reliability tests . 72 7.3.1 High-temperature blocking (HTRB) 72 7.3.2 High-temperature gate bias 72 7.3.3 Intermittent operating life (load cycles) 72 7.4 Type tests and routine tests 73 7.4.1 Type tests 73 7.4.2 Routine tests 73 Bibliography . 75 Figure 1 Basic waveforms to specify th
30、e gate charges . 14 Figure 2 Integral times for the turn-on energy E onand turn-off energy E off. 16 Figure 3 Switching times 21 Figure 4 Circuit diagram for testing of drain-source voltage 35 Figure 5 Circuit diagram for testing of gate-source voltage . 35 Figure 6 Circuit diagram for testing of ga
31、te-drain voltage . 36 Figure 7 Basic circuit for the testing of drain current 37 Figure 8 Circuit diagram for testing of peak drain current . 38 Figure 9 Basic circuit for the testing of reverse drain current of MOSFETs . 38 4 60747-8 IEC:2010 Figure 10 Basic circuit for the testing of peak reverse
32、drain current of MOSFETs . 39 Figure 11 Circuit diagram for verifing FBSOA . 40 Figure 12 Circuit diagram for verifying RBSOA 41 Figure 13 Test waveforms for verifying RBSOA . 41 Figure 14 Circuit for testing safe operating pulse duration at load short circuit . 42 Figure 15 Waveforms of gate-source
33、 voltage V GS , drain current I Dand voltage V DSduring load short circuit condition SCSOA . 43 Figure 16 Circuit for the inductive avalanche switching 44 Figure 17 Waveforms of I D , V DSand V GSduring unclamped inductive switching . 44 Figure 18 Waveforms of I D , V DSand V GSfor the non-repetitiv
34、e avalanche switching 45 Figure 19 Circuit diagrams for the measurement drain-source breakdown voltage 46 Figure 20 Circuit diagram for measurement of gate-source off-state voltage and gate- source threshold voltage . 47 Figure 21 Circuit diagram for drain leakage (or off-state) current or drain cut
35、-off current measurement 48 Figure 22 Circuit diagram for measuring of gate cut-off current or gate leakage current 49 Figure 23 Basic circuit of measurement for on-state resistance 50 Figure 24 On-state resistance . 50 Figure 25 Circuit diagram for switching time . 51 Figure 26 Schematic switching
36、waveforms and times . 51 Figure 27 Circuit for determining the turn-on and turn-off power dissipation and/or energy . 52 Figure 28 Circuit diagrams for the measurement gate charges 54 Figure 29 Basic for the measurement of short-circuit input capacitance . 55 Figure 30 Basic circuit for measurement
37、of short-circuit output capacitance (C oss ) 56 Figure 31 Circuit for measurement of reverse transfer capacitance C rss57 Figure 32 Circuit for measurement of internal gate resistance 58 Figure 33 Circuit diagram for MOSFET forward recovery time and recovered charge (Method 1) . 59 Figure 34 Current
38、 waveform through MOSFET (Method 1) . 59 Figure 35 Circuit diagram for MOSFET forward recovery time and recovered charge (Method 2) . 60 Figure 36 Current waveform through MOSFET (Method 2) . 61 Figure 37 Circuit diagram for the measurement of drain-source reverse voltage . 62 Figure 38 Basic circui
39、t for the measurement of the output conductance g oss(method 1: null method) . 63 Figure 39 Basic circuit for the measurement of the output conductance g oss(method 2: two-voltmeter method) 64 Figure 40 Circuit for the measurement of short-circuit forward transconductance g fs (Method 1: Null method
40、) 65 Figure 41 Circuit for the measurement of forward transconductance g fs(method 2: two-voltmeter method) 66 Figure 42 Block diagram for the measurement of equivalent input noise voltage . 67 Figure 43 Circuit for the measurement of equivalent input noise voltage 67 Figure 44 Circuit diagram for t
41、he measurement of on-state drain-source resistance 68 60747-8 IEC:2010 5 Figure 45 Circuit diagram . 69 Figure 46 Circuit for high-temperature blockings . 72 Figure 47 Circuit for high-temperature gate bias 72 Figure 48 Circuit for intermittent operating life 73 Table 1 Terms for MOSFET in this stan
42、dard and the conventional used terms for the inverse diode integrated in the MOSFET . 17 Table 2 Acceptance defining characteristics . 34 Table 3 Acceptance-defining characteristics for endurance and reliability tests 71 Table 4 Minimum type and routine tests for FETs when applicable 74 6 60747-8 IE
43、C:2010 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES DISCRETE DEVICES Part 8: Field-effect transistors FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National
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