JIS Z 8737-2-2000 Acoustics -- Noise emitted by machinery and equipment -- Measurement of emission sound pressure levels at a work station and at other specifie.pdf

相关资源

JIS C9901 AMD 1-2018 Methods of calculation and representation of energy efficiency standard achievement percentage of electrical and electronic appliances (Ame.pdf

JIS B8366-1-2018 Fluid power systems and components -- Cylinders 《流体动力系统和元件 液压缸 元件和识别代码 第1部分 缸径和活塞杆.pdf

JIS Z4716-2018 Measurement methods of leakage X-ray from X-ray examination rooms《X射线检查室泄漏X射线的测量方法》.pdf

JIS Z2345-4-2018 Standard test blocks for ultrasonic testing -- Part 4 Standard test blocks for angle beam ultrasonic testing《超声检测用标准试块 第4部分 斜射超声检测用标准试块》.pdf

JIS Z2345-3-2018 Standard test blocks for ultrasonic testing -- Part 3 Standard test blocks for normal ultrasonic testing《超声检测用标准试块 第3部分 普通超声检测用标准试块》.pdf

JIS Z2345-2-2018 Standard test blocks for ultrasonic testing -- Part 2 A7963 Standard Test Block《超声检测用标准试块 第2部分 A7963标准试块》.pdf

JIS Z2345-1-2018 Standard test blocks for ultrasonic testing -- Part 1 A1 Standard Test Block《超声检测用标准试块 第1部分 A1标准试块》.pdf

JIS Z2242-2018 Method for Charpy pendulum impact test of metallic materials《金属材料的摆式冲击试验方法》.pdf

JIS Z0150-2018 Packaging -- Distiribution packaging -- Graphical symbols for handling and storage of packages《包装 畸变包装 包装处理和储存用图形符号》.pdf

JIS X6302-9-2018 Identification cards -- Recording technique -- Part 9 Tactile identifier mark《识别卡 记录技术 第9部分 触式鉴别器标志》.pdf

猜你喜欢

DLA MIL-PRF-19500 627 B-2012 SEMICONDUCTOR DEVICE DIODE SILICON ULTRA-FAST RECOVERY POWER RECTIFIER 1N6688 1N6689 1N6688US 1N6689US JANTX JANTXV AND JANS.pdf

DLA MIL-PRF-19500 628 B-2012 SEMICONDUCTOR DEVICE DIODE SILICON ULTRA-FAST RECOVERY POWER RECTIFIER 1N6690 THROUGH 1N6693 1N6690US THROUGH 1N6693US JAN JANTX JANTXV AND JANS.pdf

DLA MIL-PRF-19500 630 F-2012 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTOR P-CHANNEL SILICON TYPES 2N7389 2N7390 2N7389U 2N7389U5 AND 2N7390U 2N7390U5 JANTXV R AN.pdf

DLA MIL-PRF-19500 631 B VALID NOTICE 1-2011 Semiconductor Device Filed Effect Radiation Hardened Total Dose and Single Event Effects) Transistors N-Channel Silicon Types 2N7395 2N7.pdf

DLA MIL-PRF-19500 632 B VALID NOTICE 1-2011 Semiconductor Device Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistors N-Channel Silicon Types 2N7399 2N.pdf

DLA MIL-PRF-19500 633 D-2013 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTORS P-CHANNEL SILICON TYPES 2N7403 AND 2N7404 JANSD AND JANSR.pdf

DLA MIL-PRF-19500 634 D-2013 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTORS N-CHANNEL SILICON TYPES 2N7405 2N7406 2N7407 AND 2N7408 JANSD AND JANSR.pdf

DLA MIL-PRF-19500 638 B VALID NOTICE 1-2011 Semiconductor Device Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor N-Channel Silicon Type 2N7410 JANS.pdf

DLA MIL-PRF-19500 639 A VALID NOTICE 2-2011 Semiconductor Device Field Effect Radiation Hardened (Total Dose and Single Event Effects)Transistor P-Channel Silicon Type 2N7411 JANSD.pdf