1、AMSC N/A FSC 5910 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. INCH-POUND MIL-PRF-49470C 19 January 2011 SUPERSEDING MIL-PRF-49470B 13 January 2003 PERFORMANCE SPECIFICATION CAPACITOR, FIXED, CERAMIC DIELECTRIC, SWITCH MODE POWER SUPPLY (GENERAL PURPOSE AND TEMPE
2、RATURE STABLE), STANDARD RELIABILITY AND HIGH RELIABILITY, GENERAL SPECIFICATION FOR This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the general requirements for general purpose (BQ, BR, and BX charact
3、eristics) and temperature stable (BP characteristic) ceramic capacitors for use in switch mode power supplies. Two product levels are offered: B level (standard reliability) and T level (high reliability). An acceleration factor of 8:1 has been used to relate life test data obtained at 200 percent o
4、f rated voltage at maximum rated temperature to rated voltage at rated temperature. 1.2 Classification. Capacitors covered by this specification should be classified by the style, as specified (see 3.1). 1.2.1 Part or Identifying Number (PIN). Capacitors specified herein (see 3.1); are identified by
5、 a PIN which consists of the basic number of the performance specification and a series of coded characters. The coded characters provide information concerning the characteristic, specification sheet number, capacitance, capacitance tolerance, voltage, and, where applicable, lead configuration. The
6、 PIN is in the following form: 1/ M49470 R 01 474 K C N Performance Characteristic Performance Capacitance Capacitance Rated Configuration Specification (1.2.1.1) specification (1.2.1.2) tolerance voltage (see 1.2.1.5) Indicating sheet number (1.2.1.3) (1.2.1.4) MIL-PRF-49470 (indicating MIL-PRF-494
7、70/1) 1.2.1.1 Characteristic. The characteristic refers to the voltage-temperature limits of the capacitor. The first letter (B) (not shown) identifies the rated temperature range of -55C to +125C. The second letter indicates the voltage-temperature limits as shown in table I. 1/ A “T” prefix is use
8、d in place of the “M” for T level product. Comments, suggestions, or questions on this document should be addressed to: US Army Communications - Electronics RDEC, ATTN: RDER-PRQ-QE, Fort Monmouth, NJ 07703-5023 or emailed to Robert.Francisus.Army.Mil. Since contact information can change, you may wa
9、nt to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil. The requirements to comply with the change in the terminal strength test method (4.8.10) must be completed by 6 months from the date of this document. Before then, use of the previou
10、s method is authorized. Copyright Communications - Electronics Command Provided by IHS under license with CRAINot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-49470C 2 TABLE I. Characteristic. Capacitance change with reference to +25C Symbol Step A through s
11、tep D of table XII Step E through step G of table XII P 0 ppm/C 30 ppm/C 0 ppm/C 30 ppm/C Q 15 percent +15, -50 percent R 15 percent +15, -40 percent X 15 percent +15, -25 percent 1.2.1.2 Capacitance. The nominal capacitance value, expressed in picofarads (pF) is identified by a three digit number;
12、the first two digits represent significant figures and the last digit specifies the number of zeros to follow. 1.2.1.3 Capacitance tolerance. The capacitance tolerance is identified by a single letter in accordance with table II. TABLE II. Capacitance tolerance. Symbol Capacitance tolerance J 5 perc
13、ent K 10 percent M 20 percent 1.2.1.4 Rated voltage. The rated voltage for continuous operation at +125C is identified by a single letter as shown in table III. TABLE III. Rated voltage. Symbol Rated voltage Z 25 A 50 B 100 C 200 E 500 1.2.1.5 Configuration. The configuration is identified by single
14、 letter; as shown in table IV (see 3.1). Copyright Communications - Electronics Command Provided by IHS under license with CRAINot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-49470C 3 TABLE IV. Configuration. Symbol (last digit of PIN) Lead style Height pro
15、file (Dimension A) Formed lead length, L (inches) N N (straight) Standard N/A L L (formed) Standard .070 .010 M L (formed) Standard .045 .010 J J (formed) Standard .070 .010 K J (formed) Standard .045 .010 A N (straight) Low N/A B L (formed) Low .070 .010 D L (formed) Low .045 .010 C J (formed) Low
16、.070 .010 F J (formed) Low .045 .010 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or a
17、s examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specificatio
18、ns, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-I-4605
19、8 - Insulating Compound, Electrical (for Coating Printed Circuit Assemblies). MIL-PRF-49470/1 - Capacitor, Fixed, Ceramic Dielectric, Switch Mode Power Supply (General Purpose and Temperature Stable), Standard Reliability and High Reliability, Unencapsulated, Horizontally Stacked, Style PS01. MIL-PR
20、F-49470/2 - Capacitor, Fixed, Ceramic Dielectric, Switch Mode Power Supply (General Purpose and Temperature Stable), Standard Reliability and High Reliability, Encapsulated, Horizontally Stacked, Style PS02. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-202 - Test Methods Standard Electronic and Electrica
21、l Component Parts. MIL-STD-790 - Standard Practice for Established Reliability and High Reliability Qualified Products List (QPL) Systems for Electrical, Electronic, and Fiber Optic Parts Specifications. MIL-STD-1276 - Leads for Electronic Component Parts. (Copies of these documents are available on
22、line at https:/assist.daps.dla.mil/quicksearch or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) Copyright Communications - Electronics Command Provided by IHS under license with CRAINot for ResaleNo reproduction or networking permitted w
23、ithout license from IHS-,-,-MIL-PRF-49470C 4 2.3 Non-Government publications. The following documents form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are those cited in the solicitation or contract. ELECTRONIC COMPONENTS ASSOCIATIO
24、N (ECA) EIA/ECA-469 - Standard Test Method for Destructive Physical Analysis (DPA) of Ceramic Monolythic Capacitors. (DoD adopted). TECHAMERICA EIA-557 - Statistical Process Control Systems. (DoD adopted). (Copies of these documents are available online at http:/ or Global Engineering Documents, Att
25、n: Customer Service Department, 15 Inverness Way East, Englewood, CO 80112-5776.) 2.4 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein (except for related specification sheets), the tex
26、t of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Specification sheets. The individual item requirements shall be as specified herein and in accordance with the applica
27、ble specification sheet. In the event of any conflict between the requirements of this specification and the specification sheet, the latter shall govern. 3.2 Qualification. Capacitors furnished under this specification shall be products that are authorized by the qualifying activity for listing on
28、the applicable qualified products list (QPL) before contract award (see 4.4 and 6.3). In addition, the manufacturer shall obtain certification from the qualifying activity that the QPL requirements of 3.3 and 4.2.1 have been met and are being maintained. Authorized distributors who are approved to M
29、IL-STD-790 distributor requirements by the QPL manufacturer are listed in the QPL. 3.3 QPL system. The manufacturer shall establish and maintain a QPL system for parts covered by this specification. Requirements for this system are specified in MIL-STD-790. In addition, the manufacturer shall establ
30、ish a Statistical Process Control (SPC) system that meets the requirements of 3.3.1. 3.3.1 SPC system. As part of the overall MIL-STD-790 QPL system, the manufacturer shall establish a SPC system that meets the requirements of EIA-557. Typical manufacturing processes for application of a SPC include
31、 raw material mixing and blending, dielectric sheet manufacturing, stacking and electrode printing, laminating and dicing, chip firing, termination, conformal coating, and encapsulation. 3.4 Materials. Materials shall be as specified herein. However, when a definite material is not specified, a mate
32、rial shall be used which will enable the capacitors to meet the performance requirements of this specification. Acceptance or approval of any constituent material shall not be construed as a guarantee of the acceptance of the finished product. 3.5 Interface and physical dimension requirements. Capac
33、itors shall meet the interface and physical dimensions specified (see 3.1). 3.5.1 Dielectric parameters. Capacitors supplied to this specification shall have a minimum dielectric thickness of 0.8 mil for 25 volt and 50 volt rated capacitors or 1 mil for capacitors with ratings above 50 volts. Dielec
34、tric thickness is the actual measured thickness of the fired ceramic dielectric layer. Voids, or the cumulative effect of voids, shall not reduce the total dielectric thickness by more than 50 percent (see figure 1). 3.5.2 Lead attachment. When solder is utilized to attach the lead frame to the chip
35、 capacitor, the solder shall have a liquidus temperature of 260C or greater. Copyright Communications - Electronics Command Provided by IHS under license with CRAINot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-49470C 5 ACCEPTABLE UNACCEPTABLE FIGURE 1. Die
36、lectric parameters. 3.5.3 Terminal lead finish. The terminal lead finish shall be in accordance with code 32 or code 52 of MIL-STD-1276 (NOTE: The 200 microinch maximum dimension for code 52 is not applicable). 3.5.3.1 Solder dip (retinning). The manufacturer may solder dip/retin the leads of capaci
37、tors supplied to this specification provided the solder dip process (see appendix A) has been approved by the qualifying activity. 3.5.3.2 Pure tin. The use of pure tin, as an underplate or final finish, is prohibited both internally and externally. Tin content of capacitor components and solder sha
38、ll not exceed 97 percent, by mass. Tin shall be alloyed with a minimum of 3 percent lead, by mass (see 6.5). 3.6 Nondestructive internal examination (T level product only). Prior to assembly, all chip capacitors shall be subjected to ultrasonic examination or some other method of nondestructive inte
39、rnal examination approved by the qualifying activity. When capacitors are examined as specified in 4.8.1, there shall be no capacitors delivered that show unacceptable responses as specified in EIA/ECA-469. 3.7 Chip level DPA (T level product only). When examined as specified in 4.8.2, chip capacito
40、rs shall meet the defect criteria of EIA/ECA-469. The EIA/ECA-469 delamination criteria shall be replaced with the following: a. Any single delamination of an interface of material layers exceeding 20 percent of the overall interface (pertaining to the overall chip element length or width), and exce
41、eding .005 inch (0.13 mm). b. Any single delamination of an interface of material layers, in the active area, which exceeds .005 inch (0.13 mm), and displaces adjacent dielectric layers by more than 50 percent of the average nominal dielectric thickness. c. Any knitline delamination which exceeds 20
42、 percent of the length of the knitline interface (end margin length) or which exceeds .010 inch (0.25 mm), whichever is smaller. d. Any delamination in any material interface of a side margin. NOTE: Delaminations or longitudinally migrating voids within a dielectric material layer may be treated as
43、delaminations at material interfaces; or, they may be treated as dielectric voids, in which case the zone of interest must include all of the migratory segments (see figures EIA/ECA-469 D.1 and D.2). 3.8 In-process visual examination. When capacitors are inspected as specified in 4.8.3, no device sh
44、all be acceptable that exhibits the following: 3.8.1 Ceramic body defects. a. Cracks or pre-chipouts. b. Exposed electrodes. c. Delaminations. Copyright Communications - Electronics Command Provided by IHS under license with CRAINot for ResaleNo reproduction or networking permitted without license f
45、rom IHS-,-,-MIL-PRF-49470C 6 d. Electrodes visible in chipouts. e. Chipouts longer than 30 percent of each axis or longer than .100 inch (2.54 mm), whichever is less. f. Lifted terminations. 3.8.2 Lead attachment defects. a. Exposed electrodes. b. Solder balls or conductive epoxy particles. c. Expos
46、ed base metal on the lead frame that exceeds 5 percent of the total solderable area. d. Less than or equal to 80 percent solder attachment. e. Fractured solder. f. Bent, twisted or fractured leads. g. Residual flux. 3.9 Thermal shock and voltage conditioning. When tested as specified in 4.8.5, capac
47、itors shall withstand the extremes of high and low temperature without visible damage and meet the following requirements: a. Insulation resistance (at +125C): As specified in 3.10. b. Dielectric withstanding voltage (at +25C): As specified in 3.11. c. Insulation resistance (at +25C): As specified i
48、n 3.10. d. Dissipation factor (at +25C): As specified in 3.12. e. Capacitance (at +25C): Shall be within the tolerance specified (see 3.1). 3.10 Insulation resistance. When measured as specified in 4.8.11, the insulation resistance shall not be less than the following: a. At +25C, rated voltage: 100
49、,000 megohms or 1,000 megohm-F, whichever is less. b. At +125C, rated voltage: 10,000 megohms or 100 megohm-F, whichever is less. 3.11 Dielectric withstanding voltage. When tested as specified in 4.8.8, there shall be no evidence of breakdown or visible evidence of arcing or sparking. 3.12 Dissipation factor. When determined as specified in 4.8.7, the dissipation factor shall be
