1、Designation: F1190 18Standard Guide forNeutron Irradiation of Unbiased Electronic Components1This standard is issued under the fixed designation F1190; the number immediately following the designation indicates the year oforiginal adoption or, in the case of revision, the year of last revision. A nu
2、mber in parentheses indicates the year of last reapproval. Asuperscript epsilon () indicates an editorial change since the last revision or reapproval.1. Scope1.1 This guide strictly applies only to the exposure ofunbiased silicon (Si) or gallium arsenide (GaAs) semiconduc-tor components (integrated
3、 circuits, transistors, and diodes) toneutron radiation to determine the permanent damage in thecomponents. Validated 1-MeV displacement damage functionscodified in National Standards are not currently available forother semiconductor materials.1.2 Elements of this guide, with the deviations noted,
4、mayalso be applicable to the exposure of semiconductors com-prised of other materials except that validated 1-MeV displace-ment damage functions codified in National standards are notcurrently available.1.3 Only the conditions of exposure are addressed in thisguide. The effects of radiation on the t
5、est sample should bedetermined using appropriate electrical test methods.1.4 This guide addresses those issues and concerns pertain-ing to irradiations with neutrons.1.5 System and subsystem exposures and test methods arenot included in this guide.1.6 The range of interest for neutron fluence in dis
6、placementdamage semiconductor testing range from approximately 109to 10161-MeV n/cm2.1.7 This guide does not address neutron-induced single ormultiple neutron event effects or transient annealing.1.8 This guide provides an alternative to Test Method 1017,Neutron Displacement Testing, a component of
7、MIL-STD-883and MIL-STD-750.1.9 This standard does not purport to address all of thesafety concerns, if any, associated with its use. It is theresponsibility of the user of this standard to establish appro-priate safety, health, and environmental practices and deter-mine the applicability of regulato
8、ry limitations prior to use.1.10 This international standard was developed in accor-dance with internationally recognized principles on standard-ization established in the Decision on Principles for theDevelopment of International Standards, Guides and Recom-mendations issued by the World Trade Orga
9、nization TechnicalBarriers to Trade (TBT) Committee.2. Referenced Documents2.1 ASTM Standards:2E264 Test Method for Measuring Fast-Neutron ReactionRates by Radioactivation of NickelE265 Test Method for Measuring Reaction Rates and Fast-Neutron Fluences by Radioactivation of Sulfur-32E668 Practice fo
10、r Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining AbsorbedDose in Radiation-Hardness Testing of Electronic DevicesE720 Guide for Selection and Use of Neutron Sensors forDetermining Neutron Spectra Employed in Radiation-Hardness Testing of ElectronicsE721 Guide for Determini
11、ng Neutron Energy Spectra fromNeutron Sensors for Radiation-Hardness Testing of Elec-tronicsE722 Practice for Characterizing Neutron Fluence Spectra inTerms of an Equivalent Monoenergetic Neutron Fluencefor Radiation-Hardness Testing of ElectronicsE1249 Practice for Minimizing Dosimetry Errors in Ra
12、dia-tion Hardness Testing of Silicon Electronic Devices UsingCo-60 SourcesE1250 Test Method for Application of Ionization Chambersto Assess the Low Energy Gamma Component ofCobalt-60 Irradiators Used in Radiation-Hardness Testingof Silicon Electronic DevicesE1854 Practice for Ensuring Test Consisten
13、cy in Neutron-Induced Displacement Damage of Electronic PartsE1855 Test Method for Use of 2N2222A Silicon BipolarTransistors as Neutron Spectrum Sensors and Displace-ment Damage MonitorsE2450 Practice for Application of CaF2(Mn) Thermolumi-nescence Dosimeters in Mixed Neutron-Photon Environ-mentsF98
14、0 Guide for Measurement of Rapid Annealing of1This guide is under the jurisdiction of ASTM Committee F01 on Electronicsand is the direct responsibility of Subcommittee F01.11 on Nuclear and SpaceRadiation Effects.Current edition approved March 1, 2018. Published April 2018. Originallyapproved in 198
15、8. Last previous edition approved in 2011 as F119011. DOI:10.1520/F1190-18.2For referenced ASTM standards, visit the ASTM website, www.astm.org, orcontact ASTM Customer Service at serviceastm.org. For Annual Book of ASTMStandards volume information, refer to the standards Document Summary page onthe
16、 ASTM website.Copyright ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United StatesThis international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for theDevelo
17、pment of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.1Neutron-Induced Displacement Damage in Silicon Semi-conductor DevicesF1892 Guide for Ionizing Radiation (Total Dose) EffectsTesting of Semiconductor Device
18、s2.2 Military Standards:3MIL-STD-883 Test Method Standard MicrocircuitsMIL-STD-750 Test Methods for Semiconductor Devices2.3 Other Documents:2.2.1 The Department of Defense publishes every fewyears a compendium of nuclear reactor facilities that may besuitable for neutron irradiation of electronic c
19、omponents:DASIAC SR-94-009, April 1996, Guide to Nuclear Weap-ons Effects Simulation Facilities and Techniques42.4 The Offce of the Federal Register, National Archivesand Records Administration publishes several documents thatdelineate the regulatory requirements for handling and trans-porting radio
20、active semiconductor components:Code of Federal Regulations: Title 10 (Energy), Part 20,Standards for Protection Against Radiation5Code of Federal Regulations: Title 10 (Energy), Part 30,Rules of General Applicability to Domestic Licensing ofByproduct Material5Code of Federal Regulations: Title 49 (
21、Transportation), Parts100 to 17753. Terminology3.1 Definitions:3.1.1 1-MeV equivalent neutron fluence eq, 1 MeV, Sithisexpression is used by the radiation-hardness testing communityto characterize an incident energy-fluence spectrum, (E), interms of monoenergetic neutrons at a specific energy, Eref=
22、1MeV, required to produce the same displacement damage in aspecific irradiated material, denoted by the subscript as “matl”(see Practice E722 for details).3.1.1.1 DiscussionHistorically, the material has been as-sumed to be silicon (Si). Other materials such as galliumarsenide (GaAs), whose radiatio
23、n damage effects mechanismsdiffer substantially from Si based devices, requires that futureuse of the 1-MeV equivalent fluence expression include theexplicit specification of the irradiation semiconductor material.3.1.2 equivalent monoenergetic neutron fluence (eq,Eref, matl)an equivalent monoenerge
24、tic neutron fluence thatcharacterizes an incident energy-fluence spectrum, (E), interms of the fluence of monoenergetic neutrons at a specificenergy, Eref, required to produce the same displacement dam-age in a specified irradiated material, matl (see Practice E722for details).3.1.2.1 DiscussionThe
25、appropriate expressions for com-monly used 1-MeV equivalent fluence are eq, 1 MeV, Siforsilicon semiconductor devices and eq, 1 MeV, GaAsfor galliumarsenide based devices. See Practice E722 for a more thoroughtreatment of the meaning and significant limitations imposedon the use of these expressions
26、.3.1.3 silicon damage equivalent (SDE)expression syn-onymous with “1-MeV(Si) equivalent fluence in silicon.”4. Summary of Guide4.1 Evaluation of neutron radiation-induced damage insemiconductor components and circuits requires that the fol-lowing steps be taken:4.1.1 Select a suitable neutron facili
27、ty where the radiationenvironment and exposure geometry desired are both availableand currently characterized (within the last 15 months). Prac-tice E1854 contains detailed guidance to assist the user inselecting a neutron facility that is certified to be adequatelycalibrated.4.1.2 Prepare test plan
28、 and fixtures,4.1.3 Conduct pre-irradiation electrical test of the testsample,4.1.4 Expose test sample and dosimeters,4.1.5 Retrieve irradiated test sample,4.1.6 Read dosimeters,4.1.7 Conduct post-irradiation electrical tests, and4.1.8 Repeat 4.1.4 through 4.1.7 until the desired cumula-tive fluence
29、 is achieved or until degradation of the test devicewill not allow any further useful data to be taken.4.2 Operations addressed in this guide are only thoserelating to facility selection, irradiation procedure and fixturedevelopment, positioning and exposure of the test sample, andshipment of the ir
30、radiated samples back to the parent facility.Dosimetry methods are covered in existing ASTM standardsreferenced in Section 2, and many pre- and post-exposureelectrical measurement procedures are contained in the litera-ture. Dosimetry is usually supplied by the neutron facility, seePractice E1854.5.
31、 Significance and Use5.1 Semiconductor devices can be permanently damaged byneutrons (1, 2)6. The effect of such damage on the performanceof an electronic component can be determined by measuringthe components electrical characteristics before and afterexposure to fast neutrons in the neutron fluenc
32、e range ofinterest. The resulting data can be utilized in the design ofelectronic circuits that are tolerant of the degradation exhibitedby that component.5.2 This guide provides a method by which the exposure ofsilicon and gallium arsenide semiconductor devices to neutronirradiation may be performe
33、d in a manner that is repeatable andwhich will allow comparison to be made of data taken atdifferent facilities.5.3 For semiconductors other than silicon and galliumarsenide, applicable validated 1-MeV damage functions are notavailable in codified National standards. In the absence of avalidated 1-M
34、eV damage function, the non-ionizing energyloss (NIEL) or the displacement kerma, as a function of3Available from Standardization Documents Order Desk, Bldg. 4 Section D, 700Robbins Ave., Philadelphia, PA 19111-5094, Attn: NPODS.4Available from Defense Special Weapons Agency, Washington, DC 20305-10
35、00.5Available from the Superintendent of Documents, U.S. Government PrintingOffice, Washington, DC 20402.6The boldface numbers in parentheses refer to a list of references at the end ofthis standard.F1190 182incident neutron energy, normalized to the response in the 1MeV energy region, may be used a
36、s an approximation. SeePractice E722 for a description of the method used to deter-mine the damage functions in Si and GaAs (3).6. Interferences6.1 Gamma Effects:6.1.1 Gamma rays will always be present in reactor pro-duced neutron environments. Prompt gamma rays are produceddirectly in the fission p
37、rocess, from neutron transmutationreactions with reactor support materials and test objects.Delayed gamma rays are emitted by fission products andactivated materials. Furthermore, these gamma rays can pro-duce secondary gamma rays and fluorescence photons inreactor fuel, moderator, and surrounding m
38、aterials. Sincedegradation in piece part performance may be produced bygamma rays as well as neutrons, and because of the softerphoton spectra, dose enhancement may be a problem. If aseparation of neutron (n) and gamma ray() degradation isdesired, either the n/ ratio must be increased to the point a
39、twhich gamma effects are negligible or the test sample degra-dation must first be characterized in a “pure” gamma rayenvironment and one must have a basis for believing that thedamage mode of concern does not exhibit any synergy betweenthe neutron and gamma response. The use of such data from agamma
40、 ray exposure to separate neutron and gamma effectsobtained during a neutron exposure may be a complex task. Ifthis approach is taken, Guide F1892 should be used as areference. Guides E1249 and E1250 should be used to addressdose enhancement issues.6.2 Temperature EffectsAnnealing of neutron damage
41、isenhanced at elevated temperatures. Elevated temperatures mayoccur during irradiation, transportation, storage, or electricalcharacterization of the test devices.6.3 Dosimetry ErrorsNeutron fluence is typically reportedin terms of an equivalent 1-MeV monoenergetic neutronfluence in the specified ir
42、radiated material (eq, 1 MeV, Sioreq, 1 MeV, GaAs) in units of neutrons per square centimeter.ASTM guidelines and standards exist for calculating this valuefrom measured neutron generator characteristics. However,neutron facilities may not routinely re-measure the neutronspectrum, (using Guide E720
43、and Method E721) at the testsample exposure sites. A currently valid determination of theneutron spectrum is needed to provide the essential data toaccurately ascertain the equivalent 1-MeV monoenergetic neu-tron fluence in the specified irradiated material. Lack of thiscritical data can result in s
44、ubstantial error. Therefore, theexperimenter must request a current valid determination of the1-MeV equivalent fluence in silicon or GaAs, as needed, fromthe reactor facility operator. This may require a re-characterization of the reactor test facility, or the particular testconfiguration. Practice
45、E1854 discusses the roles of the facility,dosimetrist, and user.6.4 Recoil Ionization EffectsIonization effects fromneutron-induced recoils of the lattice atoms within a semicon-ductor device may be significant for some device types at somereactor configurations, although under normal conditions, io
46、n-ization due to the gamma radiation from the source will bemuch greater than the ionization from neutron-induced recoils.6.5 Test Configuration EffectsExtraneous materials in thevicinity of the test specimens can modify the radiation envi-ronment at the test sample location. Both the neutron spectr
47、umand the gamma field can be altered by the presence of suchmaterial even if these materials are not directly interposedbetween the reactor core and the test devices.6.6 Thermal Neutron EffectsFast Burst Reactor (FBR)neutron spectra have a small thermal neutron component;however, TRIGA reactors inhe
48、rently produce a very largethermal neutron flux from the water moderation of the fissionneutrons. Neutrons interact with the materials of the devicesbeing irradiated causing them to become radioactive. Thermalneutrons generally induce higher levels of radioactivity. As aconsequence, parts irradiated
49、 to moderate or high fluencelevels at TRIGA reactors should not be handled or measuredsoon after exposure. It is therefore common practice at TRIGAreactors to shield test parts from the thermal neutrons withborated polyethylene or cadmium shields. Cadmium capture ofthermal neutrons produces more gamma rays than boroncapture, thus producing a lower n/ ratio when such a shield isused. In addition, whereas cadmium has a strong capture crosssection for neutrons with incident energies less than 0.3 eV,boron-10 has a significant (n,) reaction with a 1/E energyfall-o
