1、raising standards worldwide NO COPYING WITHOUT BSI PERMISSION EXCEPT AS PERMITTED BY COPYRIGHT LAW BSI Standards Publication Semiconductor devices Discrete devices Part 15: Isolated power semiconductor devices BS EN 60747-15:2012National foreword This British Standard is the UK implementation of EN
2、60747-15:2012. It is identical to IEC 60747-15:2010. It supersedes BS EN 60747-15:2004 which is withdrawn. The UK participation in its preparation was entrusted to Technical Committee EPL/47, Semiconductors. A list of organizations represented on this committee can be obtained on request to its secr
3、etary. This publication does not purport to include all the necessary provisions of a contract. Users are responsible for its correct application. The British Standards Institution 2012 Published by BSI Standards Limited 2012 ISBN 978 0 580 58410 7 ICS 31.080.99 Compliance with a British Standard ca
4、nnot confer immunity from legal obligations. This British Standard was published under the authority of the Standards Policy and Strategy Committee on 30 April 2012. Amendments issued since publication Amd. No. Date Text affected BRITISH STANDARD BS EN 60747-15:2012 EUROPEAN STANDARD EN 60747-15 NOR
5、ME EUROPENNE EUROPISCHE NORM March 2012 CENELEC European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung Management Centre: Avenue Marnix 17, B - 1000 Brussels 2012 CENELEC - All rights of exploitation in
6、 any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 60747-15:2012 E ICS 31.080.99 Supersedes EN 60747-15:2004English version Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices (IEC 60747-15:2010) Dispositifs semi-conducteurs - Disposit
7、ifs discrets - Partie 15: Dispositifs de puissance semiconducteurs isols (CEI 60747-15:2010) Halbleiterbauelemente - Einzel-Halbleiterbauelemente - Teil 15: Isolierte Leistungshalbleiter (IEC 60747-15:2010) This European Standard was approved by CENELEC on 2011-01-20. CENELEC members are bound to co
8、mply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENEL
9、EC Management Centre or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre
10、has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, t
11、he Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland, Turkey and the United Kingdom. BS EN 60747-15:2012EN 60747-15:2012 - 2 - Foreword The text of document 47E/403/FDIS, future edition 2 of IEC 60747-15, prepared by SC 47E, “Discrete semiconductor device
12、s“, of IEC TC 47, “Semiconductor devices“ was submitted to the IEC-CENELEC parallel vote and approved by CENELEC as EN 60747-15:2012. The following dates are fixed: latest date by which the EN has to be implemented at national level by publication of an identical national standard or by endorsement
13、(dop) 2012-09-16 latest date by which the national standards conflicting with the EN have to be withdrawn (dow) 2014-01-20 This European Standard supersedes EN 60747-15:2004. The main changes with respect to EN 60747-15:2004 are listed below. a) Clause 3, 4 and 5 were re-edited and some of them were
14、 combined to other sub clauses. b) Clause 6, 7 were re-edited as a part of “Measuring methods” with amendment of suitable addition and deletion. c) Clause 8 was amended by suitable addition and deletion. d) Annex C, D and Bibliography were deleted. Attention is drawn to the possibility that some of
15、the elements of this document may be the subject of patent rights. CENELEC and/or CEN shall not be held responsible for identifying any or all such patent rights. _ Endorsement notice The text of the International Standard IEC 60747-15:2010 was approved by CENELEC as a European Standard without any
16、modification. In the official version, for Bibliography, the following notes have to be added for the standards indicated: IEC 60112 NOTE Harmonized as EN 60112. IEC 61287-1:2005 NOTE Harmonized as EN 61287-1:2006 (not modified). _ BS EN 60747-15:2012 - 3 - EN 60747-15:2012 Annex ZA (normative) Norm
17、ative references to international publications with their corresponding European publications The following documents, in whole or in part, are normatively referenced in this document and are indispensable for its application. For dated references, only the edition cited applies. For undated referen
18、ces, the latest edition of the referenced document (including any amendments) applies. NOTE When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD applies. Publication Year Title EN/HD Year IEC 60270 - High-voltage test techniques - Partia
19、l discharge measurements EN 60270 - IEC 60664-1 2007 Insulation coordination for equipment within low-voltage systems - Part 1: Principles, requirements and tests EN 60664-1 2007 IEC 60721-3-3 1994 Classification of environmental conditions - Part 3: Classification of groups of environmental paramet
20、ers and their severities - Section 3: Stationary use at weatherprotected locations EN 60721-3-3 1995 IEC 60747-1 2006 Semiconductor devices - Part 1: General - - IEC 60747-2 - Semiconductor devices - Discrete devices and integrated circuits - Part 2: Rectifier diodes - - IEC 60747-6 - Semi conductor
21、 devices - Part 6: Thyristors - - IEC 60747-7 - Semiconductor devices - Part 7: Bipolar transistors - - IEC 60747-8 - Semiconductor devices - Part 8: Field-effect transistors - - IEC 60747-9 - Surface mounting technology - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs) - - IEC
22、 60749-5 - Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test EN 60749-5 - IEC 60749-6 - Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature EN 60749-6 - IEC 60749-10 - Semiconductor d
23、evices - Mechanical and climatic test methods - Part 10: Mechanical shock EN 60749-10 - IEC 60749-12 - Semiconductor devices - Mechanical and climatic test methods - Part 12: Vibration, variable frequency EN 60749-12 - BS EN 60747-15:2012EN 60747-15:2012 - 4 - Publication Year Title EN/HD Year IEC 6
24、0749-15 - Semiconductor devices - Mechanical and climatic test methods - Part 15: Resistance to soldering temperature for through-hole mounted devices EN 60749-15 - IEC 60749-21 - Semiconductor devices - Mechanical and climatic test methods - Part 21: Solderability EN 60749-21 - IEC 60749-25 - Semic
25、onductor devices - Mechanical and climatic test methods - Part 25: Temperature cycling EN 60749-25 - IEC 60749-34 - Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling EN 60749-34 - BS EN 60747-15:2012 2 60747-15 IEC:2010 CONTENTS 1 Scop e 6 2 Normative references 6
26、 3 Terms and definitions 7 4 Letter symbols 8 4.1 Gene ra l . 8 4.2 Additional subscripts/symbols 8 4.3 List letter symbols 8 4.3.1 Voltages and currents 8 4.3.2 Mechanical symbols 8 4.3.3 Other symbols 9 5 Essential ratings (limiting values) and characteristics . 9 5.1 Gene ra l . 9 5.2 Ratings (li
27、miting values) 9 5.2.1 Isolation voltage (V isol ) 9 5.2.2 Peak case non-rupture current (I RSMCor I CNR ) (where appropriate) 9 5.2.3 Terminal current (I tRMS ) (where appropriate), . 9 5.2.4 Total power dissipation (P tot ) 9 5.2.5 Temperatures . 9 5.2.6 Mechanical ratings 10 5.2.7 Climatic rating
28、s (where appropriate) 10 5.3 Characteristics . 10 5.3.1 Mechanical characteristics . 10 5.3.2 Parasitic inductance (L p ) 11 5.3.3 Parasitic capacitances (C p ) 11 5.3.4 Partial discharge inception voltage (V iMor V i(RMS) ) (where appropriate) 11 5.3.5 Partial discharge extinction voltage (V eM or
29、V e(RMS) ) (where appropriate) 11 5.3.6 Thermal resistances 11 5.3.7 Transient thermal impedance (Z th ) 12 6 Measurement methods 12 6.1 Verification of isolation voltage rating between terminals and base plate (V isol ) 12 6.2 Methods of measurement 13 6.2.1 Partial discharge inception and extincti
30、on voltages (V i ) (V e ) 13 6.2.2 Parasitic inductance (L p ) 13 6.2.3 Parasitic capacitance terminal to case (C p ) 15 6.2.4 Thermal characteristics 16 7 Acceptance and reliability 18 7.1 General requirements . 18 7.2 List of endurance tests . 19 7.3 Acceptance defining criteria 19 7.4 Type tests
31、and routine tests 19 7.4.1 Type tests 19 7.4.2 Routine tests 20 Annex A (informative) Test method of peak case non-rupture current 21 BS EN 60747-15:201260747-15 IEC:2010 3 Annex B (informative) Measuring method of the thickness of thermal compound paste . 24 Bibliography . 25 Figure 1 Basic circuit
32、 diagram for isolation breakdown withstand voltage test (“high pot test”) with V isol12 Figure 2 Circuit diagram for measurement of parasitic inductances (L p ) . 14 Figure 3 Wave forms 15 Figure 4 Circuit diagram for measurement of parasitic capacitance C p16 Figure 5 Cross-section of an isolated p
33、ower device with reference points for temperature measurement of T cand T s17 Figure A.1 Circuit diagram for test of peak case non-rupture current I CNR21 Figure B.1 Example of a measuring gauge for a layer of thermal compound paste of a thickness between 5 mm and 150 mm . 24 Table 1 Endurance tests
34、 . 19 Table 2 Acceptance defining characteristics for endurance and reliability tests 19 Table 3 Minimum type and routine tests for isolated power semiconductor devices . 20 BS EN 60747-15:2012 6 60747-15 IEC:2010 SEMICONDUCTOR DEVICES DISCRETE DEVICES Part 15: Isolated power semiconductor devices 1
35、 Scope This part of IEC 60747 gives the requirements for isolated power semiconductor devices excluding devices with incorporated control circuits. These requirements are additional to those given in other parts of IEC 60747 for the corresponding non-isolated power devices. 2 Normative references Th
36、e following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 60270, High-voltage test techniques Partial dis
37、charge measurements IEC 60664-1:2007, Insulation coordination for equipment within low-voltage systems Part 1: Principles, requirements and tests IEC 60721-3-3:1994, Classification of environmental conditions Part 3-3: Classification of groups of environmental parameters and their severities Station
38、ary use at weather protected locations IEC 60747-1:2006, Semiconductor devices Part 1: General IEC 60747-2, Semiconductor devices Discrete devices and integrated circuits Part 2: Rectifier diodes IEC 60747-6, Semiconductor devices Part 6: Thyristors IEC 60747-7, Semiconductor discrete devices and in
39、tegrated circuits Part 7: Bipolar transistors IEC 60747-8, Semiconductor devices Part 8: Field-effect transistors IEC 60747-9, Semiconductor devices Discrete devices Part 9: Insulated-gate bipolar transistors (IGBTs) IEC 60749-5, Semiconductor devices Mechanical and climatic test methods Part 5: Ste
40、ady-state temperature humidity bias life test IEC 60749-6, Semiconductor devices Mechanical and climatic test methods Part 6: Storage at high temperature IEC 60749-10, Semiconductor devices Mechanical and climatic test methods Part 10: Mechanical shock IEC 60749-12, Semiconductor devices Mechanical
41、and climatic test methods Part 12: Vibration, variable frequency BS EN 60747-15:201260747-15 IEC:2010 7 IEC 60749-15, Semiconductor devices Mechanical and climatic test methods Part 15: Resistance to soldering temperature for through-hole mounted devices IEC 60749-21, Semiconductor devices Mechanica
42、l and climatic test methods Part 21: Solderability IEC 60749-25, Semiconductor devices Mechanical and climatic test methods Part 25: Temperature cycling IEC 60749-34, Semiconductor devices Mechanical and climatic test methods Part 34: Power cycling 3 Terms and definitions For the purposes of this do
43、cument, the following terms and definitions apply. 3 . 1 isolated power semiconductor device semiconductor power device that contains an integral electrical insulator between the cooling surface or base plate and any isolated circuit elements 3.2 Constituent parts of the isolated power semiconductor
44、 device 3.2.1 switch any single component that performs a switching function in a electrical circuit, e.g. diode, thyristor, MOSFET, etc. NOTE A switch might be a parallel or series connection of several chips with a single functionality. 3.2.2 base plate part of the package having a cooling surface
45、 that transfers the heat from inside to outside 3.2.3 main terminal terminal having a high potential of the power circuit and carrying the main current. The main terminal can comprise more than one physical connector. 3.2.4 control terminal terminal having a low current capability for the purpose of
46、 control function, to which the external control signals are applied or from which sensing parameters are taken 3.2.4.1 high voltage control terminal terminal electrically connected to an isolated circuit element, but carrying only low current for control function NOTE Examples include current shunt
47、s and collector sense terminals having the high potential of the main terminals. 3.2.4.2 low voltage control terminal terminal having a control function and isolated from the high voltage control terminals NOTE Examples include the terminals of isolated temperature sensors and isolated gate driver i
48、nputs etc. BS EN 60747-15:2012 8 60747-15 IEC:2010 3.2.5 insulation layer integrated part of the device case that insulates any part having high potential from the cooling surface or external heat sink and any isolated circuit element 3.3 peak case non-rupture current peak current, which will not le
49、ad to a rupture of the package, ejecting plasma and massive particles under specified conditions 3.4 thermal interface material heat conducting material between base plate and external heat sink 4 Letter symbols 4.1 General General letter symbols are defined in Clause 4 of IEC 60747-1:2006. 4.2 Additional subscripts/symbols p = parasitic t = terminal isol = isolation m = mount 4.3 List letter symbols 4.3.1 Voltages and currents Termin
