1、BRITISH STANDARD BS EN 60749-25:2003 Semiconductor devices Mechanical and climatic test methods Part 25: Temperature cycling The European Standard EN 60749-25:2003 has the status of a British Standard ICS 31.080.01 BS EN 60749-25:2003 This British Standard was published under the authority of the St
2、andards Policy and Strategy Committee on 30 October 2003 BSI 30 October 2003 ISBN 0 580 42859 1 National foreword This British Standard is the official English language version of EN 60749-25:2003. It is identical with IEC 60749-25:2003. It partially supersedes BS EN 60749:1999 which will be withdra
3、wn on 2006-09-01. The UK participation in its preparation was entrusted to Technical Committee EPL/47, Semiconductors, which has the responsibility to: A list of organizations represented on this committee can be obtained on request to its secretary. Cross-references The British Standards which impl
4、ement international or European publications referred to in this document may be found in the BSI Catalogue under the section entitled “International Standards Correspondence Index”, or by using the “Search” facility of the BSI Electronic Catalogue or of British Standards Online. This publication do
5、es not purport to include all the necessary provisions of a contract. Users are responsible for its correct application. Compliance with a British Standard does not of itself confer immunity from legal obligations. aid enquirers to understand the text; present to the responsible international/Europe
6、an committee any enquiries on the interpretation, or proposals for change, and keep the UK interests informed; monitor related international and European developments and promulgate them in the UK. Summary of pages This document comprises a front cover, an inside front cover, the EN title page, page
7、s 2 to 13 and a back cover. The BSI copyright notice displayed in this document indicates when the document was last issued. Amendments issued since publication Amd. No. Date CommentsEUROPEAN STANDARD EN 60749-25 NORME EUROPENNE EUROPISCHE NORM September 2003 CENELEC European Committee for Electrote
8、chnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung Central Secretariat: rue de Stassart 35, B - 1050 Brussels 2003 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No.
9、EN 60749-25:2003 E ICS 31.080.01 English version Semiconductor devices - Mechanical and climatic test methods Part 25: Temperature cycling (IEC 60749-25:2003) Dispositifs semiconducteurs - Mthodes dessais mcaniques et climatiques Partie 25: Cycles de temprature (CEI 60749-25:2003) Halbleiterbaueleme
10、nte - Mechanische und klimatische Prfverfahren Teil 25: Zyklische Temperaturwechsel (IEC 60749-25:2003) This European Standard was approved by CENELEC on 2003-09-01. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European
11、Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the Central Secretariat or to any CENELEC member. This European Standard exists in three official versions (English,
12、 French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the Central Secretariat has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belg
13、ium, Czech Republic, Denmark, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Lithuania, Luxembourg, Malta, Netherlands, Norway, Portugal, Slovakia, Spain, Sweden, Switzerland and United Kingdom. Foreword The text of document 47/1696/FDIS, future edition 1 of IEC 60749-25, prepar
14、ed by IEC TC 47, Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by CENELEC as EN 60749-25 on 2003-09-01. This mechanical and climatic test method, as it relates to change of temperature, is a complete rewrite of the test contained in Subclause 1.1 of Chapter 3
15、 of EN 60749:1999. The following dates were fixed: latest date by which the EN has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2004-06-01 latest date by which the national standards conflicting with the EN have to be withdrawn (dow) 20
16、06-09-01 Annexes designated “normative“ are part of the body of the standard. In this standard, annex ZA is normative. Annex ZA has been added by CENELEC. _ Endorsement notice The text of the International Standard IEC 60749-25:2003 was approved by CENELEC as a European Standard without any modifica
17、tion. _ Page2 EN6074925:2003067-9425 IEC:02 30 3 CONTENTS 1 Scope.4 2 Normative references.4 3 Terms and definitions .4 4 Test apparatus.6 5 Procedure6 5.1 Initial measurements.6 5.2 Conditioning6 5.3 Cycle rates7 5.4 Upper and lower soak times 9 5.5 Upper and lower soak temperatures 9 5.6 Soak mode
18、s9 5.7 Cycle time.9 5.8 Ramp rate.10 5.9 Load transfer time.10 5.10 Recovery.10 5.11 Final measurements10 5.12 Failure criteria.11 6 Summary11 Annex ZA (normative) Normative references to international publications with their corresponding European publications .13 Figure 1 Representative temperatur
19、e profile for thermal cycle test conditions 12 Table 1 Temperature cycling test conditions 8 Table 2 Soak mode conditions .8 Table 3 Typical frequency and soak mode for test conditions.9 Table 4 Recommended test conditions for solder interconnection temperature cycling.10 Page3 EN6074925:2003067-942
20、5 IE:C2003 4 SEMICONDUCTOR DEVICES MECHANICAL AND CLIMATIC TEST METHODS Part 25: Temperature cycling 1 Scope This part of IEC 60749 provides a test procedure for determining the ability of semiconductor devices and components and/or board assemblies to withstand mechanical stresses induced by altern
21、ating high and low temperature extremes. Permanent changes in electrical and/or physical characteristics can result from these mechanical stresses. This test method is in general accord with IEC 60068-2-14 but, due to specific requirements of semiconductors, the clauses of this standard apply. This
22、test method applies to single, dual and triple chamber temperature cycling and covers component and solder interconnection testing. In single chamber cycling, the load is placed in a stationary chamber and is heated or cooled by introducing hot, ambient or cold air into the chamber. In dual chamber
23、cycling, the load is placed on a moving platform that shuttles between stationary chambers maintained at fixed temperatures. In triple chamber temperature cycling, the load is moved between the three chambers. 2 Normative references The following referenced documents are indispensable for the applic
24、ation of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 60068-2-14:1984, Basic environmental testing procedures Part 2: Tests Test N: Change of temperature 3 Terms and
25、definitions For the purposes of this document, the following terms and definitions apply. 3.1 load sample(s) and associated fixtures (trays, racks, etc.) in the chamber during the test 3.2 working zone volume in the chamber(s) in which the temperature of the load is controlled within the specified c
26、onditions Page4 EN6074925:2003067-9425 IEC:02 30 5 3.3 sample temperature T stemperature of the samples during temperature cycling, as measured by thermocouples, or equivalent temperature measurement apparatus, affixed to, or imbedded in, their bodies NOTE The thermocouple, or equivalent temperature
27、 measurement apparatus, and whichever attachment or embedding method is used, ensure that the entire mass of the sample(s) reaches the temperature extremes and the soak requirements. 3.4 maximum sample temperature T s,maxmaximum temperature experienced by the sample(s) as measured by thermocouples (
28、see 3.3) 3.5 minimum sample temperature T s,minminimum temperature experienced by the sample(s) as measured by thermocouples (see 3.3) 3.6 load transfer time time taken to physically transfer the load from one temperature chamber and introduce it into the other NOTE Load transfer applies to dual and
29、 triple chamber cycling. 3.7 maximum load largest load that can be placed in the chamber and still meet the specified temperature cycling requirements as verified by thermocouples (see 3.3) 3.8 sample temperature differential T difference between specified T s,max and specified T s,min for the tempe
30、rature cycling test condition (see Table 1) 3.9 soak time total time the sample temperature is within a specified range of each specified T s,maxand specified T s,minNOTE This range is defined as the time T sis at between 5 C and either +10 C or +15 C (dependent on the test condition tolerance) of s
31、pecified T s,maxfor the upper end of the cycle and the time T s is at between +5 C and 10 C of specified T s,minfor the lower end of the cycle. 3.10 soak temperature temperature range that is between 5 C and either +10 C or +15 C (dependent on the test condition tolerance) of specified T s,maxand be
32、tween +5 C and 10 C of specified T s,min3.11 cycle time time between one high temperature extreme to the next, or from one low temperature extreme to the next NOTE For a given sample, see Figure 1. Page5 EN6074925:2003067-9425 IE:C2003 6 3.12 ramp rate rate of temperature increase or decrease per un
33、it of time for the sample(s) NOTE 1 Ramp rate should be measured for the linear portion of the profile curve, which is generally in the range of between 10 % and 90 % of the test condition temperature range (see points a) and b) in Figure 1). NOTE 2 Ramp rate can be load dependent and should be veri
34、fied for the load being tested. 3.13 test conditions various temperature cycle range options listed in Table 1 3.14 soak mode minimum soak time at soak temperature (maximum) and soak time (minimum). Each test condition will have four possible soak modes. These soak modes are listed in Table 2. The s
35、oak mode selected is dependent on the failure mechanism of interest. 4 Test apparatus The chamber(s) used shall be capable of providing and controlling the specified temperatures and cycling time in the working zone(s), when the chamber is loaded with a maximum load. Direct heat conduction to sample
36、(s) shall be minimized. The capability of each chamber achieving the sample temperature requirements shall be verified across each chamber for a given load by one or both of the following methods: a) Periodic calibration using instrumented parts and a maximum load, and continual monitoring during ea
37、ch test of such fixed tool thermocouple temperature measurement(s) as adequate to ensure run-to-run repeatability. b) Continual monitoring during each test of an instrumented part or parts placed at worst- case temperature locations (for example, this may be the corners and middle of the load). 5 Pr
38、ocedure 5.1 Initial measurements The specimen shall be visually inspected and electrically and mechanically checked, as required by the relevant specification. 5.2 Conditioning a) The specimen shall be subjected to the test in the unpacked condition, without load or in the switched-off condition, un
39、less otherwise specified by the relevant specification. b) The specimen under test, while being at the ambient temperature of the laboratory, shall be placed in the chamber, the atmosphere of which is at the appropriate ambient, low temperature T s,minor high temperature T s,max . c) Depending on wh
40、ether the chamber is at ambient or one of the temperature extremes, the specimen shall be subjected to (or maintained at) the low/high temperature for the appropriate period. d) The specimen shall then be subjected to the ambient temperature of the laboratory for the appropriate period. Page6 EN6074
41、925:2003067-9425 IEC:02 30 7 e) The specimen shall then be subjected to the atmosphere at the appropriate high temperature T s,maxor low temperature T s,min . f) The specimen shall be maintained at the high/low temperature condition for the appropriate period. g) At the end of this period, the speci
42、men shall be subjected to the ambient temperature of the laboratory for the appropriate period. h) This procedure constitutes one cycle (see Figure 1). i) At the end of the last cycle, the specimen shall be removed from the chamber and be subjected to the recovery procedure. 5.3 Cycle rates Nominal
43、cycle rates are dependent on the soak mode selected. 5.3.1 Component cycle rates Typical component level temperature cycle rates are in the range of 1 to 3 cycles per hour. Typical failure mechanisms include, but are not limited to, fatigue (such as metal circuit fatigue) and delamination. For certa
44、in failure mechanisms, such as ball bond integrity, faster rates, 3 cycles per hour can be used if the temperature cycling chambers are capable of meeting the T s,minand T s,maxand soak requirements for the given test condition. 5.3.2 Solder interconnect cycle rates Typical solder interconnect cycle
45、 rates are slower, in the range of 1 to 2 cycles per hour, when solder joint fatigue evaluations are performed. These include flip chip, ball grid array and stacked packages with solder interconnections. Cycle frequency and soak time is more significant for solder interconnections. 5.3.3 Maximum and
46、 minimum temperature The maximum and minimum sample temperatures measured shall be within the range stated in Table 1 for the specific test condition being used and the nominal T shall be at least attained. Page7 EN6074925:2003067-9425 IE:C2003 8 Table 1 Temperature cycling test conditions Test cond
47、ition aT s,minC T s,maxC A 55 0 10 +85 10 0 +B 55 0 10 +125 15 0 +C 65 0 10 +150 15 0 +G 40 0 10 +125 15 0 +H 55 0 10 +150 15 0 +I 40 0 10 +115 15 0 +J 0 0 10 +100 15 0 +K 0 0 10 +125 15 0 +L 55 0 10 +110 15 0 +M 40 0 10 +150 15 0 +N 30 0 10 +80 10 0 +O 25 0 10 +125 15 0 +P 65 0 10 +125 15 0 +NOTE T
48、emperature cycling test conditions different from Table 1 can be used. However, test conditions should meet the soak, cycles per hour and ramp rate recommendations for the failure mechanism being tested. These conditions should be documented as indicated in Clause 6, point f).aCAUTION Care should be
49、 taken when selecting test conditions since: 1) the T s,maxrequirement for a specific test condition may exceed the glass transition temperature of some package materials which may induce failure mechanisms not normally seen during design application conditions in the field; and 2) coefficient of thermal expansion differences over the test condition tempe
