BS EN 61643-341-2002 Low voltage surge protective devices - Specification for thyristor surge suppressors (TSS)《低压电涌保护装置 半导体闸流管电涌抑制器(TSS)规范》.pdf

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BS EN 61643-341-2002 Low voltage surge protective devices - Specification for thyristor surge suppressors (TSS)《低压电涌保护装置 半导体闸流管电涌抑制器(TSS)规范》.pdf_第1页
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1、BRITISH STANDARD BS EN 61643-341:2001 Components for low-voltage surge protective devices Part 341: Specification for thyristor surge suppressors (TSS) The European Standard EN 61643-341:2001 has the status of a British Standard ICS 31.080.20 NO COPYING WITHOUT BSI PERMISSION EXCEPT AS PERMITTED BY

2、COPYRIGHT LAWBS EN 61643-341:2001 This British Standard, having been prepared under the direction of the Electrotechnical Sector Policy and Strategy Committee, was published under the authority of the Standards Policy and Strategy Committee on 15 March 2002 BSI 15 March 2002 ISBN 0 580 39102 7 Natio

3、nal foreword This British Standard is the official English language version of EN 61643-341:2001. It was derived by CENELEC from IEC 61643-341:2001. The CENELEC common modifications have been implemented at the appropriate places in the text and are indicated by common modification tags . The UK par

4、ticipation in its preparation was entrusted by Technical Committee PEL/37, Surge arresters, to Subcommittee PEL/37/2, Surge arresters Low voltage, which has the responsibility to: A list of organizations represented on this subcommittee can be obtained on request to its secretary. From 1 January 199

5、7, all IEC publications have the number 60000 added to the old number. For instance, IEC 27-1 has been renumbered as IEC 60027-1. For a period of time during the change over from one numbering system to the other, publications may contain identifiers from both systems. Cross-references Attention is

6、drawn to the fact that CEN and CENELEC Standards normally include an annex which lists normative references to international publications with their corresponding European publications. The British Standards which implement these international or European publications may be found in the BSI Standar

7、ds Catalogue under the section entitled “International Standards Correspondence Index”, or by using the “Find” facility of the BSI Standards Electronic Catalogue. A British Standard does not purport to include all the necessary provisions of a contract. Users of British Standards are responsible for

8、 their correct application. Compliance with a British Standard does not of itself confer immunity from legal obligations. aid enquirers to understand the text; present to the responsible international/European committee any enquiries on the interpretation, or proposals for change, and keep the UK in

9、terests informed; monitor related international and European developments and promulgate them in the UK. Summary of pages This document comprises a front cover, an inside front cover, the EN title page, pages 2 to 65 and a back cover. The BSI copyright date displayed in this document indicates when

10、the document was last issued. Amendments issued since publication Amd. No. Date CommentsEUROPEAN STANDARD EN 61643-341 NORME EUROPENNE EUROPISCHE NORM December 2001 CENELEC European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr

11、Elektrotechnische Normung Central Secretariat: rue de Stassart 35, B - 1050 Brussels 2001 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 61643-341:2001 E ICS 31.080.10 English version Components for low-voltage surge protective d

12、evices Part 341: Specification for thyristor surge suppressors (TSS) (IEC 61643-341:2001) Composants pour parafoudres basse tension Partie 341: Spcifications pour les parafoudres thyristor (CEI 61643-341:2001) Bauelemente fr berspannungsschutzgerte fr Niederspannung Teil 341: Festlegungen fr Suppres

13、sordioden (TSS) (IEC 61643-341:2001) This European Standard was approved by CENELEC on 2001-12-01. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.

14、Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the Central Secretariat or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translati

15、on under the responsibility of a CENELEC member into its own language and notified to the Central Secretariat has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Czech Republic, Denmark, Finland, France, Germany, Greece, Ice

16、land, Ireland, Italy, Luxembourg, Malta, Netherlands, Norway, Portugal, Spain, Sweden, Switzerland and United Kingdom.Foreword The text of document 37B/58/FDIS, future edition 1 of IEC 61643-341, prepared by SC 37B, Specific components for surge arresters and surge protective devices, of IEC TC 37,

17、Surge arresters, was submitted to the IEC-CENELEC parallel vote and was approved by CENELEC as EN 61643-341 on 2001-12-01. The following dates were fixed: latest date by which the EN has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2002

18、-09-01 latest date by which the national standards conflicting with the EN have to be withdrawn (dow) 2004-12-01 Annexes designated “normative“ are part of the body of the standard. Annexes designated “informative“ are given for information only. In this standard, annexes A and ZA are normative and

19、annex B is informative. Annex ZA has been added by CENELEC. _ Page2 EN61643341:2001 BSI15March2002CONTENTS 1 Scope 6 2 Normative references. 6 3 Terms, letter symbols and definitions. 7 3.1 Parametric terms, letter symbols and definitions . 7 3.2 Terms and definitions for TSS, terminals and characte

20、ristic terminology13 3.2.1 TSS .13 3.2.2 Terminals.14 3.2.3 Characteristic terminology15 4 Basic function and component description 18 4.1 TSS types18 4.2 Basic device structure .20 4.3 Device equivalent circuit21 4.4 Switching quadrant characteristics.22 4.4.1 Off-state region22 4.4.2 Breakdown reg

21、ion22 4.4.3 Negative resistance region.23 4.4.4 On-state region23 4.5 Performance criteria of a TSS23 4.5.1 System loading 23 4.5.2 Equipment protection.24 4.5.3 Durability .24 4.6 Additional TSS structures 24 4.6.1 Gated TSS.24 4.6.2 Unidirectional blocking TSS .25 4.6.3 Unidirectional conducting T

22、SS .26 4.6.4 Bidirectional TSS .26 4.6.5 Bidirectional TRIAC TSS27 5 Standard test methods27 5.1 Test conditions 27 5.1.1 Standard atmospheric conditions .27 5.1.2 Measurement errors.28 5.1.3 Measurement accuracy28 5.1.4 Designated impulse shape and values .28 5.1.5 Multiple TSS 28 5.1.6 Gated TSS t

23、esting .28 5.2 Service conditions .29 5.2.1 Normal service conditions29 5.2.2 Abnormal service conditions 29 5.3 Failures and fault modes .29 5.3.1 Degradation failure 29 5.3.2 High off-state current fault mode30 5.3.3 High reverse current fault mode.30 5.3.4 High breakover voltage fault mode.30 5.3

24、.5 Low holding current fault mode 30 5.3.6 Catastrophic (cataleptic) failure .30 5.3.7 Short-circuit fault mode30 5.3.8 Open-circuit fault mode30 Page3 EN61643341:2001 BSI15March20025.3.9 Critical failure 30 5.3.10 Fail-safe 31 5.4 Rating test procedures.31 5.4.1 Repetitive peak off-state voltage V

25、DRM 31 5.4.2 Repetitive peak on-state current, I TRM 32 5.4.3 Non-repetitive peak on-state current, I TSM 33 5.4.4 Non-repetitive peak pulse current, I PPSM 34 5.4.5 Repetitive peak reverse voltage, V RRM .35 5.4.6 Non-repetitive peak forward current, I FSM .35 5.4.7 Repetitive peak forward current,

26、 I FRM .36 5.4.8 Critical rate of rise of on-state current, di/dt .36 5.5 Characteristic test procedures .37 5.5.1 Off-state current, I D .37 5.5.2 Repetitive peak off-state current, I DRM .38 5.5.3 Repetitive peak reverse current, I RRM .38 5.5.4 Breakover voltage, V (BO)and current, I (BO) .38 5.5

27、.5 On-state voltage, V T 40 5.5.6 Holding current, I H .44 5.5.7 Off-state capacitance, C o .44 5.5.8 Breakdown voltage, V (BR) .46 5.5.9 Switching voltage, V Sand current, I S 47 5.5.10 Forward voltage, V F .48 5.5.11 Peak forward recovery voltage, V FRM .48 5.5.12 Critical rate of rise of off-stat

28、e voltage, dv/dt49 5.5.13 Temperature coefficient of breakdown voltage, V(BR) 49 5.5.14 Variation of holding current with temperature.50 5.5.15 Temperature derating 50 5.5.16 Thermal resistance, R th .50 5.5.17 Transient thermal impedance, Z th(t) 51 5.5.18 Gate-to-adjacent terminal peak off-state v

29、oltage and peak off-state gate current, V GDM , I GDM 53 5.5.19 Gate reverse current, adjacent terminal open, I GAO , I GKO 53 5.5.20 Gate reverse current, main terminals short-circuited, I GAS , I GKS 54 5.5.21 Gate reverse current, on-state, I GAT , I GKT .54 5.5.22 Gate reverse current, forward c

30、onducting state, I GAF , I GKF 55 5.5.23 Gate switching charge, Q GS 56 5.5.24 Peak gate switching current, I GSM 58 5.5.25 Gate-to-adjacent terminal breakover voltage, V GK(BO) , V GA(BO) .59 Page4 EN61643341:2001 BSI15March2002Annex A (normative) Abnormal service conditions60 A.1 Environmental con

31、ditions.60 A.1.1 Climatic conditions.60 A.1.2 Biological conditions 60 A.1.3 Chemically active substances 60 A.1.4 Mechanically or electrically active substances .60 A.1.5 Contaminating fluids 60 A.2 Mechanical conditions .60 A.3 Miscellaneous factors 61 Annex B (informative) US verification standar

32、ds with referenced impulse waveforms .62 B.1 Central office equipment verification62 B.2 Customer premise equipment verification 62 B.3 Test waveforms .62 Annex ZA (normative) Normative references to international publications with their corresponding European publications 63 Page5 EN61643341:2001 B

33、SI15March2002COMPONENTS FOR LOW-VOLTAGE SURGE PROTECTIVE DEVICES Part 341: Specification for thyristor surge suppressors (TSS) 1 Scope This part of IEC 61643 is a test specification standard for thyristor surge suppressor (TSS) components designed to limit overvoltages and divert surge currents by c

34、lipping and crowbarring actions. Such components are used in the construction of surge protective devices, particularly as they apply to telecommunications. This standard contains information on terms, letter symbols, and definitions basic functions, configurations and component structure service co

35、nditions and fault modes rating verification and characteristic measurement 2 Normative references The following normative documents contain provisions which, through reference in this text, constitute provisions of this part of IEC 61643. For dated references, subsequent amend- ments to, or revisio

36、ns of, any of these publications do not apply. However, parties to agreements based on this part of IEC 61643 are encouraged to investigate the possibility of applying the most recent editions of the normative documents indicated below. For undated references, the latest edition of the normative doc

37、ument referred to applies. Members of IEC and ISO maintain registers of currently valid International Standards. IEC 60050(191), International Electrotechnical Vocabulary Chapter 191: Dependability and quality of service IEC 60050(702), International Electrotechnical Vocabulary Chapter 702: Oscillat

38、ions, signals and related devices IEC 60099-4, Surge arrestors Part 4: Metal-oxide surge arrestors without gaps for A.C. systems IEC 60721-3-3, Classification of environmental conditions Part 3: Classification of groups of environmental parameters and their severities Section 3: Stationary use at we

39、ather- protected locations IEC 60721-3-9, Classification of environmental conditions Part 3: Classification of groups of environmental parameters and their severities Section 9: Microclimates inside products IEC 60747-1:1983, Semiconductor devices Discrete devices and integrated circuits Part 1: Gen

40、eral IEC 60747-2: 1983, Semiconductor devices Discrete devices and integrated circuits Part 2: Rectifier diodes Page6 EN61643341:2001 BSI15March2002IEC 60747-6:1983, Semiconductor devices Discrete devices and integrated circuits Part 6: Thyristors NOTE The TSS has substantially different characteris

41、tics and usage to the type of thyristor covered by IEC 60747-6. These differences necessitate the modification of some characteristic descriptions and the introduction of new terms. Such changes and additions are indicated in clause 3. IEC 60749:1996, Semiconductor devices Mechanical and climatic te

42、st methods IEC 61000-4-5:1995, Electromagnetic compatibility (EMC) Part 4: Testing and measurement techniques Section 5: Surge immunity test IEC 61083-1:1991 Digital recorders for measurements in high-voltage impulse tests Part 1: Requirements for digital recorders ITU-T Recommendation K.20:1996 Res

43、istibility of telecommunication switching equipment to overvoltages and overcurrents ITU-T Recommendation K.21:1996 Resistibility of subscribers terminal to overvoltages and overcurrents ITU-T Recommendation K.28:1993 Characteristics of semi-conductor arrester assemblies for the protection of teleco

44、mmunications installations 3 Terms, letter symbols and definitions For the purpose of this part of IEC 61643, the following definitions apply. 3.1 Parametric terms, letter symbols and definitions Where appropriate, terms, letter symbols and definitions are used from existing thyristor (IEC 60747-6)

45、and rectifier diode (IEC 60747-2) standards. NOTE 1 IEC 60747-1, chapter V, clause 2.1.1, states “IEC 60027 recommends the letters V and v only as reserve symbols for voltage; however, in the field of semiconductor devices, they are so widely used that in this publication they are on the same plane

46、as U and u.“ This standard uses the letters V and v for voltage with the letters U and u as alternatives. NOTE 2 When several distinctive forms of letter symbol exist, the most commonly used form is given first. 3.1.1 main terminal ratings listed ratings cover the appropriate requirements of the blo

47、cking, conducting and switching quadrants 3.1.1.1 repetitive peak off-state voltage, V DRM rated maximum (peak) instantaneous voltage that may be applied in the off-state conditions including all D.C. and repetitive voltage components 3.1.1.2 repetitive peak on-state current, I TRMrated maximum (pea

48、k) value of A.C. power frequency on-state current of specified waveshape and frequency which may be applied continuously Page7 EN61643341:2001 BSI15March20023.1.1.3 non-repetitive peak on-state current, I TSM rated maximum (peak) value of A.C. power frequency on-state surge current of specified wave

49、shape and frequency which may be applied for a specified time or number of A.C. cycles 3.1.1.4 non-repetitive peak impulse current, I PPSM, I TSM rated maximum value of peak impulse current of specified amplitude and waveshape that may be applied NOTE There are several symbols that are used for this rating. The merits of these symbols are as follows: I PPSMThis is technically correct as it is the maximum or peak (M) non-repetitive (S) value o

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