1、raising standards worldwideNO COPYING WITHOUT BSI PERMISSION EXCEPT AS PERMITTED BY COPYRIGHT LAWBSI British StandardsWB9423_BSI_StandardColCov_noK_AW:BSI FRONT COVERS 5/9/08 12:55 Page 1Semiconductor devices Part 14-3: Semiconductor sensors Pressure sensorsBS IEC 60747-14-3: 2009National forewordTh
2、is British Standard is the UK implementation of IEC 60747-14-3:2009. Itsupersedes BS IEC 60747-14-3:2001 which is withdrawn.The UK participation in its preparation was entrusted to Technical CommitteeEPL/47, Semiconductors.A list of organizations represented on this committee can be obtained onreque
3、st to its secretary.This publication does not purport to include all the necessary provisions of acontract. Users are responsible for its correct application. BSI 2009ISBN 978 0 580 62901 3ICS 31.080.99Compliance with a British Standard cannot confer immunity fromlegal obligations.This British Stand
4、ard was published under the authority of the StandardsPolicy and Strategy Committee on 31 July 2009Amendments issued since publicationAmd. No. Date Text affectedBRITISH STANDARDBS IEC 60747-14-3:2009IEC 60747-14-3Edition 2.0 2009-04INTERNATIONAL STANDARD NORME INTERNATIONALESemiconductor devices Par
5、t 14-3: Semiconductor sensors Pressure sensors Dispositifs semiconducteurs Partie 14-3: Capteurs semiconducteurs Capteurs de pression INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE RICS 31.080.99 PRICE CODECODE PRIXISBN 2-8318-1039-7 Registered trademark of the
6、International Electrotechnical Commission Marque dpose de la Commission Electrotechnique Internationale BS IEC 60747-14-3:2009 2 60747-14-3 IEC:2009 CONTENTS FOREWORD.4 INTRODUCTION.6 1 Scope.7 2 Normative references .7 3 Terminology and letter symbols 7 3.1 General terms .7 3.1.1 Semiconductor pres
7、sure sensors.7 3.1.2 Sensing methods.7 3.2 Definitions .9 3.3 Letter symbols.12 3.3.1 General .12 3.3.2 List of letter symbols .12 4 Essential ratings and characteristics.13 4.1 General .13 4.1.1 Sensor materials for piezoelectrical sensors .13 4.1.2 Handling precautions.13 4.1.3 Types 13 4.2 Rating
8、s (limiting values) 13 4.2.1 Pressures 13 4.2.2 Temperatures 13 4.2.3 Voltage13 4.3 Characteristics 13 4.3.1 Full-scale span (VFSS) .13 4.3.2 Full-scale output (VFSO).13 4.3.3 Sensitivity (S).13 4.3.4 Temperature coefficient of full-scale sensitivity (s) 14 4.3.5 Offset voltage (Vos).14 4.3.6 Temper
9、ature coefficient of offset voltage (vos) 14 4.3.7 Pressure hysteresis of output voltage (Hohp) 14 4.3.8 Temperature hysteresis of output voltage (HohT) 14 4.3.9 Response time 14 4.3.10 Warm-up .14 4.3.11 Dimensions .14 4.3.12 Mechanical characteristics.14 5 Measuring methods 14 5.1 General .14 5.1.
10、1 General precautions 14 5.1.2 Measuring conditions.14 5.2 Output voltage measurements.15 5.2.1 Purpose.15 5.2.2 Principles of measurement 15 5.3 Sensitivity (S) 16 5.3.1 Purpose.16 5.3.2 Measuring procedure.16 5.3.3 Specified conditions 16 5.4 Temperature coefficient of sensitivity (s) .16 BS IEC 6
11、0747-14-3:200960747-14-3 IEC:2009 3 5.4.1 Purpose.16 5.4.2 Specified conditions 16 5.5 Temperature coefficient of full-scale span ( VFSS) and maximum temperature deviation of full-scale span (VFSS) .17 5.5.1 Purpose.17 5.5.2 Specified conditions 17 5.6 Temperature coefficient of offset voltage ( Vos
12、) and (Vos).17 5.6.1 Purpose.17 5.6.2 Specified conditions 17 5.7 Pressure hysteresis of output voltage (Hohp) 18 5.7.1 Purpose.18 5.7.2 Circuit diagram and circuit description .18 5.7.3 Specified conditions 18 5.8 Temperature hysteresis of output voltage (HohT) 18 5.8.1 Purpose.18 5.8.2 Measuring p
13、rocedure.18 5.8.3 Specified conditions 18 5.9 Linearity 18 5.9.1 Purpose.18 5.9.2 Specified conditions 18 5.9.3 Measuring procedure.18 Figure 1 Basic circuit for measurement of output voltage .15 Figure 2 Linearity test 19 BS IEC 60747-14-3:2009 4 60747-14-3 IEC:2009 INTERNATIONAL ELECTROTECHNICAL C
14、OMMISSION _ SEMICONDUCTOR DEVICES Part 14-3: Semiconductor sensors Pressure sensors FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to p
15、romote international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports, Publicly Available Specifications (PAS) and Guid
16、es (hereafter referred to as “IEC Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with may participate in this preparatory work. International, governmental and non-governmental organizations liaising with the IEC a
17、lso participate in this preparation. IEC collaborates closely with the International Organization for Standardization (ISO) in accordance with conditions determined by agreement between the two organizations. 2) The formal decisions or agreements of IEC on technical matters express, as nearly as pos
18、sible, an international consensus of opinion on the relevant subjects since each technical committee has representation from all interested IEC National Committees. 3) IEC Publications have the form of recommendations for international use and are accepted by IEC National Committees in that sense. W
19、hile all reasonable efforts are made to ensure that the technical content of IEC Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any misinterpretation by any end user. 4) In order to promote international uniformity, IEC National Committees undertak
20、e to apply IEC Publications transparently to the maximum extent possible in their national and regional publications. Any divergence between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in the latter. 5) IEC provides no marking procedure to in
21、dicate its approval and cannot be rendered responsible for any equipment declared to be in conformity with an IEC Publication. 6) All users should ensure that they have the latest edition of this publication. 7) No liability shall attach to IEC or its directors, employees, servants or agents includi
22、ng individual experts and members of its technical committees and IEC National Committees for any personal injury, property damage or other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and expenses arising out of the publication, use of, or relianc
23、e upon, this IEC Publication or any other IEC Publications. 8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is indispensable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the elem
24、ents of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. International Standard IEC 60747-14-3 has been prepared by subcommittee 47E: Discrete semiconductor devices, of IEC technical committee 47: Semiconductor
25、 devices. This second edition cancels and replaces the first edition, published in 2001, and constitutes a technical revision. The major technical changes with regard to the previous edition are as follows: added a new Subclause 5.9 (measuring method of linearity) (technical) BS IEC 60747-14-3:20096
26、0747-14-3 IEC:2009 5 The text of this standard is based on the following documents: CDV Report on voting 47E/362/CDV 47E/376/RVCFull information on the voting for the approval of this standard can be found in the report on voting indicated in the above table. This publication has been drafted in acc
27、ordance with the ISO/IEC Directives, Part 2. This part of IEC 60747 should be read in conjunction with IEC 60747-1:2006. A list of all the parts in the IEC 60747 series, under the general title Semiconductor devices, can be found on the IEC website. The committee has decided that the contents of thi
28、s publication will remain unchanged until the maintenance result date indicated on the IEC web site under “http:/webstore.iec.ch“ in the data related to the specific publication. At this date, the publication will be reconfirmed; withdrawn; replaced by a revised edition, or amended. BS IEC 60747-14-
29、3:2009 6 60747-14-3 IEC:2009 INTRODUCTION This part of IEC 60747 provides basic information on semiconductors: terminology; letter symbols; essential ratings and characteristics; measuring methods; acceptance and reliability. BS IEC 60747-14-3:200960747-14-3 IEC:2009 7 SEMICONDUCTOR DEVICES Part 14-
30、3: Semiconductor sensors Pressure sensors 1 Scope This part of IEC 60747 specifies requirements for semiconductor pressure sensors measuring absolute, gauge or differential pressures. 2 Normative references The following referenced documents are indispensable for the application of this document. Fo
31、r dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 60747-1:2006, Semiconductor devices Part 1: General IEC 60747-14-1:2000, Semiconductor devices Part 14-1: Semiconductor sensors General an
32、d classification 3 Terminology and letter symbols 3.1 General terms 3.1.1 Semiconductor pressure sensors A semiconductor pressure sensor converts the difference between two pressures into an electrical output quantity. One of the two pressures may be a reference pressure (see 3.2.3). It includes lin
33、ear and on-off (switch) types of sensors. A linear sensor produces electrical output quantity changes linearly with the pressure difference. An on-off sensor switches an electrical output quantity on and off between two stable states when the increasing or decreasing pressure differences cross given
34、 threshold values. In this standard, the electrical output quantity is described as a voltage: output voltage. However, the statements made in this standard are also applicable to other output quantities such as those described in 3.8 of IEC 60747-14-1: changes in impedance, capacitance, voltage rat
35、io, frequency-modulated output or digital output. 3.1.2 Sensing methods 3.1.2.1 Piezoelectric sensing The basic principle of piezoelectric devices is that a piezoelectric material induces a charge or induces a voltage across itself when it is deformed by stress. The output from the sensor is amplifi
36、ed in a charge amplifier which converts the charge generated by the transducer sensor into a voltage that is proportional to the charge. The main advantages of piezoelectric sensing are the wide operating temperature range (up to 300 C) and high-frequency range (up to 100 kHz). BS IEC 60747-14-3:200
37、9 8 60747-14-3 IEC:2009 3.1.2.2 Piezoresistive sensing The basic principle of a piezoresistor is the change of the resistor value when it is deformed by stress. The sensing resistors can be either p- or n-type doped regions. The resistance of piezoresistors is very sensitive to strain, and thus to p
38、ressure, when correctly placed on the diaphragm of a pressure sensor. Four correctly oriented resistors are used to build a strain gauge in the form of a resistor bridge. An alternative to the resistor bridge is the transverse voltage strain gauge. It is a single resistive element on a diaphragm, wi
39、th voltage taps centrally located on either side of the resistor. When a current is passed through the resistor, the voltages are equal when the element is not under strain, but when the element is under strain, a differential voltage output appears. 3.1.2.3 Capacitive sensing A small dielectric gap
40、 between the diaphragm and a plate makes a capacitance which changes with the diaphragm movement. Single capacitance or differential capacitance techniques can be used in open- or closed-loop systems. Capacitance and capacitive changes can be measured either in a bridge circuit or using switched-cap
41、acitor techniques. Any of the capacitive sensing techniques used in a micromachined structure require an a.c. voltage across the capacitor being measured. Capacitive sensing has the following advantages: small size of elements, wide-operating temperature range, ease of trimming, good linearity, and
42、compatibility to CMOS signal conditioning. 3.1.2.4 Silicon vibrating sensing The vibrating element of a silicon micromachined structure is maintained in oscillation, either by piezoelectric or electrical field energy. The application of pressure to the silicon diaphragm produces strain on the microm
43、achined structure and the vibration frequency is measured to determine applied pressure. 3.1.2.5 Signal conditioning Semiconductor pressure sensors are mainly micromachined structures including a sensing element. Other electrical components or functions can be performed at the same time and in the s
44、ame package on the process line. Most pressure sensors offer integrated signal conditioning. Signal conditioning transforms a raw sensor output into a calibrated signal. This process may involve several functions, such as calibration of initial zero pressure offset and pressure sensitivity, compensa
45、tion of non-linear temperature errors of offset and sensitivity, compensation of the non-linearity and output signal amplification of the pressure. 3.1.2.6 Temperature compensation Semiconductor sensors are temperature sensitive. Some are temperature non-compensated sensors while others are compensa
46、ted with added circuitry or materials designed to counteract known sources of error. When non-compensated, the variations due to the temperature follow physical laws and a temperature coefficient () is representative of this physical phenomena. When compensated, the temperature remaining error is al
47、so dependant on the way the compensation is performed. In this case, a maximum temperature deviation () better represents this error. BS IEC 60747-14-3:200960747-14-3 IEC:2009 9 3.2 Terms and definitions For the purposes of this document, the terms and definitions given in IEC 60747-1 and the follow
48、ing apply. 3.2.1 piezoresistance coefficient measure of the piezoresistance effect derived from the semiconductor materials under the application of strain 3.2.2 absolute pressure pressure using absolute vacuum as the datum point 3.2.3 reference pressure pressure against which pressures are defined,
49、 usually absolute vacuum or ambient atmo-spheric pressure 3.2.4 differential pressure difference between the two (absolute) pressures that act simultaneously on opposite sides of the membrane 3.2.5 relative pressure differential pressure when one of the two pressures is considered to be a reference pressure with respect to which the other pressure is being measured 3.2.6 gauge pressure relative pressure when the ambient atmospheric pressure is used as t
