1、 REVISIONS LTR DESCRIPTION DATE APPROVED Prepared in accordance with ASME-14.100 Selected item drawing REV PAGE REV PAGE REV STATUS OF PAGES REV PAGES 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY Roger Kissel DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OH http:/www.dscc.dla.mil/programs/milspec/docsea
2、rch.asp Original date of drawing CHECKED BY Alan Barone TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPE 2N5926 14 March 2005 APPROVED BY Thomas Hess SIZE A CODE IDENT. NO. 037Z3 DWG NO. 04030 REV PAGE 1 OF 11 AMSC N/A 5961-E075 MIL-S-19500/447 has been cancelled. This drawing m
3、ay be used as a substitute. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 04030 REV PAGE 2 1. SCOPE 1.1 Scope. This drawing describes the requirements for NPN, silic
4、on, high-power transistors. 1.2 Part or Identifying Number (PIN). The complete PIN shall be as shown in the following example: 04030 - 01 NONTX, TX, TXV | | | Drawing number Device type Quality Level 1/ 1.2.1 Device types. The device types identify the quality assurance level of the devices as follo
5、ws: Device type 1/ Figure number Package 04030-01 1 Stud 04030-01TX 1 Stud 04030-01TXV 1 Stud 1.3 Maximum rating. TC= +25C unless otherwise specified. PT (1)PT (1)VCEOVCBOVEBOIC (2)IBTJRJCTC= +25C TC= +100C and TSTGW W V dc V dc V dc A dc A dc C C/W 350 200 120 150 10 50 20 -65 to +200 0.5 (1) Betwe
6、en TC= +25C and TC= +200C, linear derating factor (average) = 2.0W/C. (2) Pulsed (see 4.4.1) = 90A.1.4 Primary electrical characteristics. hFE(1) VBE(1) VCE(sat)(1) IC= 20 A dc VCE= 2 V dc IC= 50 A dc VCE= 2 V dc IC = 90 A dc VCE = 4 V dc IC= 50 A dc VCE= 2 V dc IC= 90 A dc VCE= 4 V dc IC= 50 A dc I
7、B= 5 A dc IC= 90 A dc IB= 18 A dc Min 20 Max 80 Min 10 Max 40 Min 5 Max 1.2 Max 2.5 Max 0.6 V dc Max 1.5 V dc (1) Pulsed (see 4.4.1). Limits RJC|hfe| VCE= 10 V dc tontstfC/W IC= 5 A dc f = 100 KHz IC= 50 A dc Min 5 Max .5 20 7.0 s 4.0 s 6.0 s 1/ Quality level: non-TX (-01, no suffix), -01TX, and -01
8、TXV levels correspond to JAN, JANTX, and JANTXV equivalent quality requirements in MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 04030 REV PAGE 3 2. A
9、PPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has bee
10、n made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The f
11、ollowing specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, Genera
12、l Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Build
13、ing 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exe
14、mption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified herein. 3.1.1 Device capability. The devices must be capable of meeting the following MIL-STD-750 test conditions: Step Method Condition 1 3053
15、 Load condition C (unclamped inductive load), TC= +25C, single 10 ms pulse, tr= tf 1s, RBB1= 1, RBB2= , VBB1= 6.2 V dc, VBB2= 0 V dc, IC= 50 A dc, VCC= 25 V dc, L = 5mH. See 3.1.2. Endpoints: Group A, subgroup 2. 2 3053 Load condition B (clamped switching Destructive), TA= +25C, single 2 ms pulse, t
16、r= tf 1s, RBB1= 1, RBB2= 20, VBB1= 6.2 V dc, VBB2= 3 V dc, IC= 50 A dc, VCLAMP= 125 V dc, L = 68H, RL= 0, clamping diode 2N5926 with emitter shorted to base. Device fails if clamp voltage is not reached. See 3.1.2. Endpoints: Group A, subgroup 2. 3 3051 TC= 100C, t = 1 s, 1 cycle, see 3.1.2 and figu
17、re 2. Test 1 - VCE= 4 V dc, IC= 50 A dc Test 2 - VCE= 50 V dc, IC= 4 A dc Test 3 - VCE= 120 V dc, IC= 850 mA dc 4 3131 IMmeasurement 10 mA. VCEmeasurement voltage . 25 V. IHcollector heating current . 10 A. VHcollector-emitter heating voltage . 20 V. tHheating time. steady-state (see method 3131 of
18、MIL-STD-750 for definition). tMDmeasurement delay time . 20s maximum. tSWsample window time 10s maximum. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 04030 REV PAGE
19、 4 3.1.2 Safe Operating Area (DC Operation) test. Each transistor shall sustain the applicable test conditions and the following acceptance criteria shall apply: (a) IC(for each transistor) shall not vary more than 10% during the dc operation; and (b) All other specified end-point test(s) limits sha
20、ll not be exceeded, after the dc-operation test. (c) Correlation note: satisfactory endurance of the transistors throughout tests 1, 2, and 3 respectively (paragraph 3.1.1, step 3) is directly associable with ascertainment of the safe operating area for the transistors as illustrated in the nomograp
21、h of figure 2. 3.2 Abbreviations, symbol, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.3 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and figure 1 herein. 3.3.1 Lead f
22、inish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. 3.3.2 Internal construction. Multiple chip construction shall not be permitted. 3.4 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.5 Manufacturer eligibility. To be eligible to supply dev
23、ices to this drawing, the manufacturer shall perform conformance inspection in accordance with the procuring activitys testing requirements as specified in 4.2 and 4.3 herein. Devices specified herein shall meet traceability as specified in MIL-PRF-19500. It is prohibited for a manufacturer not list
24、ed as an approved source to mark devices with this drawing number. 3.5.1 Certificate of compliance. A certificate of compliance shall be required from manufacturers requesting to be an approved source of supply. 3.5.2 Certificate of conformance. A certificate of conformance shall be provided with ea
25、ch lot of devices delivered in accordance with this drawing. 3.6 Recycled, recovered, or environmentally preferable materials. Recycled, recovered, or environmentally preferable materials should be used to the maximum extent possible provided that the material meets or exceeds the operational and ma
26、intenance requirements, and promotes economically advantageous life cycle costs. 3.7 Workmanship. The semiconductor shall be uniform in quality and free from any defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Sampling and inspection. Unless otherwise specified, sam
27、pling and inspection procedures shall be performed in accordance with MIL-PRF-19500, and as specified herein. 4.2 Screening. All TX and TXV devices shall be screened in accordance with table IV of MIL-PRF-19500, as appropriate and as specified herein. The following measurements shall be made in acco
28、rdance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV Measurement of MIL-PRF-19500) TX and TXV levels 4 Optional 9 Not applicable 11 ICES1and hfe112 Burn-in (see 4.2.1). 13 ICES1 = 100 percent of initial value, maximum, subgroup 2
29、of table I herein; hFE1= 25 percent, maximum, subgroup 2 of table I herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 04030 REV PAGE 5 4.2.1 Power burn in. Power
30、 burn-in conditions are in accordance with method 1039 of MIL-STD-750, test condition B and as follows: TA= 30C, 5C, VCE 4.5 V dc, TJ= 187.5C 12.5C. NOTE: No heatsink or forced air cooling on the devices shall be permitted. 4.3 Conformance inspection. Conformance inspection shall consist of the insp
31、ections and tests specified in groups A and B herein. 4.3.1 Group A inspection. Group A inspection shall be conducted in accordance with the conditions specified for subgroup testing in table I herein. 4.3.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions
32、specified for subgroup testing in table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and table II herein. Electrical measurements (end-points) and delta requirements shall be table I, subgroup 2 herein. 4.3.2.1 Group B sample selection. Samples selected from group B inspection shall meet all of the
33、 following requirements. a. Must be chosen from an inspection lot that has been submitted to and passed table I, subgroup 2, conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (group B for non-TX, TX, and TXV)
34、 may be pulled prior to the application of final lead finish. 4.4 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.4.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHS
35、Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 04030 REV PAGE 6 TABLE I. Group A inspection. 1/ MIL-STD-750 Limit Inspection 1/ Method Conditions Symbol Min Max Unit Subgroup 1 Visu
36、al and mechanical inspection 2071 Subgroup 2 Breakdown voltage, collector to emitter 3011 Bias condition D; IC= 200 mA dc; pulsed (see 4.4.1) V(BR)CEO120 V dc Collector to base cutoff current 3041 Bias condition C; VBE0 V dc; VCE= 150 V dc ICES12 mA dc Emitter to base current 3061 Bias condition D;
37、VEB= 10 V dc IEBO1 mA dc Base emitter voltage 3066 Test condition B, IC= 50 A dc, VCE= 2 V dc, pulsed (see 4.4.1) VBE11.2 V dc Base emitter voltage 3066 Test condition B, IC= 90 A dc, VCE= 4 V dc, pulsed (see 4.4.1) VBE22.5 V dc Saturation voltage and resistance 3071 IC= 50 A dc; IB= 5 A dc; pulsed
38、(see 4.4.1) VCE(SAT)10.6 V dc Saturation voltage and resistance 3071 IC= 90 A dc; IB= 18 A dc; pulsed (see 4.4.1) VCE(SAT)21.5 V dc Forward-current transfer ratio 3076 VCE= 2 V dc; IC= 20 A dc pulsed (see 4.4.1) hFE120 80 Forward-current transfer ratio 3076 VCE= 4 V dc; IC= 90 A dc pulsed (see 4.4.1
39、) hFE25 Forward-current transfer ratio 3076 VCE= 2 V dc; IC= 50 A dc pulsed (see 4.4.1) hFE310 40 Subgroup 3 High-temperature operation TA= +150C; n = 15, c = 0 Collector-base cutoff current 3041 Bias condition C; VCE= 100 V dc, VBE= 0 V dc ICES210 mA dc Low-temperature operation TA= -65C Forward-cu
40、rrent transfer ratio 3076 VCE= 2 V dc; IC= 50 A dc; pulsed (see 4.4.1) hFE410 See footnote at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 04030 REV P
41、AGE 7 TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Limit Unit Method Conditions Symbol Min Max Subgroup 4 Pulse response Turn-on time 3251 Test condition B, VCC= 50 V dc, Rc= 1 , VBE1= 11.2 V dc, Rb= 2 , VBE2= 10 V dc; n = 15, c = 0 ton7.0 s Storage time ts4.0 s Fall time tf6.0
42、 s Magnitude of common emitter small signal short-circuit forward-current transfer ratio 3306 VCE= 10 V dc; IC= 5 A dc; f = 100 kHz |hfe| 5 20 Subgroups 5, 6 and 7 Not applicable 1/ See MIL-PRF-19500 for sampling plan. Provided by IHSNot for ResaleNo reproduction or networking permitted without lice
43、nse from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 04030 REV PAGE 8 TABLE II. Group B inspection for TX and TXV. Inspection 1/ MIL-STD-750 Small lot CI Method Conditions Subgroup 1 Solderability 2026 Resistance to solvents 1022 n = 3, c = 0 Subgroup 2
44、 Temperature cycling (air to air) 1051 Test condition C n = 6, c = 0 Hermetic seal Fine leak Gross leak 1071 Electrical measurements See table I, subgroup 2 herein Subgroup 3 Steady state operation life 1027 TA= +30C 5C, VCE= 4.5 V dc, TJ= 187.5C, 12.5C, t = 168 hours minimum n = 12, c = 0 Electrica
45、l measurements 3041 ICES1= +100% of initial value, maximum 3076 hFE125 percent change of initial value, maximum Subgroup 4 Decap internal visual (design verification) 2075 n = 1, c = 0 Subgroup 5 Thermal resistance 3131 RJC= .5C/W; see 3.1.1 n = 6, c = 0 Subgroup 6 High-temperature life (nonoperatin
46、g) 1032 t = 168 hours minimum, T = +200C n = 12, c = 0 Electrical measurements See table I, subgroup 2 herein 1/ For sampling plan, see MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE
47、 A CODE IDENT NO. 037Z3 DWG NO. 04030 REV PAGE 9 NOTES: 1. Dimensions are in inches, millimeters are given for general information only. 2. See NSB Handbook H28, “Screw-Thread Standards for Federal Services”. 3. Angular orientation of terminals with respect to hex flats is optional. 4. Terminal spac
48、ing measured at the base seat only. 5. This dimension applies to the location of the center line of the terminals. 6. Terminal 1 - emitter, 2 - base, 3 - collector. All leads are isolated from the case. 7. Maximum pitch diameter of plated thread shall be basic pitch diameter. FIGURE 1 Physical dimensions. Dimension Ltr Inches Millimeters NotesMin Max Min Max A1.300 7.62 CD .745 .775 18.92 19.69 CD1.775 .875 19.69 22.23 CH .480 .535 12.19 13.59 HF .847 .875 21.51 22.23 HT .090 .167 2.29 4.24 OAH .937 1.03 23.80 26.16 PS .480 .500
