1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Made technical changes in Table I. Editorial changes throughout. mlp 92-01-27 Monica L. Poelking B Changes in accordance with NOR 5962-R268-92. tvn 92-08-04 Monica L. Poelking C Add package CDFP4-F16. Use new boilerplate. ljs 98-02-04 Raymond Mon
2、nin D Figure 4 modified to be consistent with Table I. ljs 98-08-12 Raymond Monnin E Add VCCpositive supply voltage specifications to para. 1.3 and 1.4. ljs 98-10-20 Raymond Monnin F Update to current requirements. Editorial changes throughout. gap 06-04-06 Raymond Monnin The original first page of
3、this drawing has been replaced. REV SHET REV F SHET 15 REV STATUS REV F F F F F F F F F F F F F F OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY David Queenan DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY D. A. Dicenzo COLUMBUS, OHIO 43218-3990 THIS D
4、RAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Robert P. Evans MICROCIRCUIT, DIGITAL, TTL-TO-ECL AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 87-11-24 TRANSLATOR, MONOLITHIC SILICON AMSC N/A REVISION LEVEL F SIZE A CAGE CODE 67268 5962-87560 SHEET 1 OF 15 DSCC FORM 223
5、3 APR 97 5962-E193-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87560 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This dra
6、wing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example: 5962-87560 01 E X Drawing number Device type (see 1.2.1) Case o
7、utline(see 1.2.2) Lead finish(see 1.2.3)1.2.1 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 10H524 Quad TTL-to-ECL translator 1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Out
8、line letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual -in-line F GDFP2-F16 or CDFP3-F16 16 Flat package X CDFP4-F16 16 Flat-package 2 CQCC1-N20 20 Square chip carrier 1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute m
9、aximum ratings. Positive supply voltage range (VCC) . 0.0 V dc to 7.0 V dc Negative supply voltage range ( VEE) . -8.0 V dc to 0.0 V dc Total supply voltage range (VCC+ | VEE |) 12 V dc Input voltage range . -5.2 V dc to 0.0 V dc Storage temperature range . -65C to +165C Lead temperature (soldering,
10、 10 seconds) +300C Junction temperature (TJ) +165C Maximum power dissipation (PD) . 530 mW Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 1.4 Recommended operating conditions. Positive supply voltage range (VCC) . 4.5 V dc minimum to 5.5 V dc maximum Negative supply voltage range (VEE)
11、 . -5.46 V dc minimum to -4.94 V dc maximum Case operating temperature range (TC) -55C to +125C Minimum high level input voltage (VIH): TA= +25C -0.780 V dc TA= +125C -0.650 V dc TA= -55C . -0.840 V dc Maximum low level input voltage (VIL) -1.950 V dc Provided by IHSNot for ResaleNo reproduction or
12、networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87560 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 3 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following spec
13、ification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General S
14、pecification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawin
15、gs. (Copies of these documents are available online at http:/assist.daps.dla.mil;quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of
16、 this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in a
17、ccordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-P
18、RF-38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan may make modifications to the requirements herein. These modification
19、s shall not affect form, fit, or function of the device. These modifications shall not affect the PIN as described herein. A “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 is required to identify when the QML flow option is used. 3.2 Design, construction, and physical dimensions. T
20、he design, construction, and physical dimensions shall be as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.2 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth tab
21、le(s). The truth table(s) shall be as specified on figure 2. 3.2.4 Logic diagram(s). The logic diagram(s) shall be as specified on figure 3. 3.2.5 Test circuit and switching waveforms. Test circuit and switching waveforms shall be as specified on figure 4. 3.3 Electrical performance characteristics.
22、 Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full case operating temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING S
23、IZE A 5962-87560 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 4 DSCC FORM 2234 APR 97 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table I. 3
24、.5 Marking. Marking shall be in accordance with MIL-PRF-38535, appendix A. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufact
25、urer has the option of not marking the “5962-“ on the device. 3.5.1 Certification/compliance mark. A compliance indicator “C” shall be marked on all non-JAN devices built in compliance to MIL-PRF-38535, appendix A. The compliance indicator “C” shall be replaced with a “Q“ or “QML“ certification mark
26、 in accordance with MIL-PRF-38535 to identify when the QML flow option is used. 3.6 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6 herein). The certificate of compliance submi
27、tted to DSCC-VA prior to listing as an approved source of supply shall affirm that the manufacturers product meets the requirements of MIL-PRF-38535, appendix A and the requirements herein. 3.7 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38535, appendix A shall be
28、 provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change. Notification of change to DSCC-VA shall be required for any change that affects this drawing. 3.9 Verification and review. DSCC, DSCCs agent, and the acquiring activity retain the option to review the man
29、ufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. Scree
30、ning shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. The following additional criteria shall apply: a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintain
31、ed by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MI
32、L-STD-883. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical parameter tests prior to burn-in are optional at the discretion of the manufacturer. Provided by IHSNot for ResaleNo reproduction or networking permi
33、tted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87560 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TC +125C unless otherwise specified G
34、roup A subgroups Limits Unit Min Max Cases E, F, 2 and X Quiescent tests 1/ VRVF2.4 0.4 1 -1.010 -0.780 2.4 0.4 2 -0.860 -0.650 High level output voltage VOHOutputs terminated through 100 to -2 V 2.4 0.4 3 -1.060 -0.840 V 2.4 0.4 1 -1.950 -1.580 2.4 0.4 2 -1.950 -1.565 Low level output voltage VOLVC
35、C= +5.0 V VEE= -5.2 V GND = 0.0 V 2/ 2.4 0.4 3 -1.950 -1.610 V VIHTVILT2.0 0.8 1 -1.010 -0.780 2.0 0.8 2 -0.860 -0.650 High level threshold output voltage VOHA2.0 0.8 3 -1.060 -0.840 V 2.0 0.8 1 -1.950 -1.580 2.0 0.8 2 -1.950 -1.565 Low level threshold output voltage VOLA2.0 0.8 3 -1.950 -1.610 V In
36、put clamping voltage VDGND = 0.0 V ID= -10 mA VCC= +5.0 V VEE= -5.46 V AIN, BIN, CIN DIN1, 2, 3 -1.5 V GND = 0.0 V ID= -20 mA VCC= +5.0 V VEE= -5.46 V Strobe 1, 2, 3 -1.5 V Input breakdown current IINBVIN= 5.5 V, VEE= -5.46 V VCC= +5.0 V, GND = 0.0 V 1, 2, 3 1.0 mA Forward bias input current IINFVCC
37、= +5.0 V VF= 0.4 V VEE= -4.94 V GND = 0.0 V AIN, BIN, CIN DIN1, 2, 3 -3.2 mA Forward bias input current IINFVCC= +5.0 V VR= 2.4 V VEE= -4.94 V GND = 0.0 V Strobe 1, 2, 3 -12.8 mA See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from
38、IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87560 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TC +125C unless otherwise specified Group A subgroups Limits Un
39、it Min Max Cases E, F, 2 and X Quiescent tests - continued1/ Reverse bias input current IRVCC= +5.0 V VR= 2.4 V VEE= -5.46 V GND = 0.0 V AIN,BIN, CIN, DIN1, 2, 3 50 A CC= +5.0 V VF= 0.4 V VEE= -5.46 V GND = 0.0 V Strobe 1, 2, 3 200 A Supply current negative IEE4/ VEE= -5.46 V, VCC= +5.0 V 2,3 -72 mA
40、 GND = 0.0 V 1 -66 mA Supply current high ICCHAll inputs = 2.4 V, VCC= +5.0 V 1, 3 16 mA VEE= -5.46 V, GND = 0.0 V 2 18 mA Supply current low ICCLStrobe = 0.4 V, VCC= +5.0 V 1, 3 25 mA EE= -5.46 V, GND = 0.0 V 2 25 mA Functional tests See 4.3.1c 7 Cases E, F and X DC rapid tests 3/ VRVF2.4 0.4 1 -1.
41、028 -0.800 2.4 0.4 2 -0.879 -0.671 High level output voltage VOHOutputs terminated through 100 to -2 V 2.4 0.4 3 -1.079 -0.861 V 2.4 0.4 1 -1.950 -1.586 2.4 0.4 2 -1.950 -1.571 Low level output voltage VOLVCC= +5.0 V VEE= -5.2 V GND = 0.0 V 2/ 2.4 0.4 3 -1.950 -1.616 V See footnotes at end of table.
42、Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87560 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. T
43、est Symbol Conditions -55C TC +125C unless otherwise specified Group A subgroups Limits Unit Min Max Cases E, F and X DC rapid tests - continued 3/ VIHTVILT2.0 0.8 1 -1.028 -0.800 2.0 0.8 2 -0.879 -0.671 High level threshold output voltage VOHAOutputs terminated through 100 to -2 V 2.0 0.8 3 -1.079
44、-0.861 V 2.0 0.8 1 -1.950 -1.586 2.0 0.8 2 -1.950 -1.571 Low level threshold output voltage VOLAVCC= +5.0 V VEE= -5.2 V GND = 0.0 V 2/ 2.0 0.8 3 -1.950 -1.616 V Input clamping voltage VDVCC= +5.0 V ID= -10 mA VEE= -5.46 V GND = 0.0 V AIN, BIN, CIN, DIN1, 2, 3 -1.5 V CC= +5.0 V ID= -20 mA VEE= -5.46
45、V GND = 0.0 V Strobe 1, 2, 3 -1.5 V Input breakdown current IINBVIN= 5.5 V, VCC= +5.0 V VEE= -5.46 V, GND = 0.0 V 1, 2, 3 1.0 mA Forward bias input current IINFVCC= +5.0 V VF= 0.4 V VEE= -4.94 V GND = 0.0 V AIN, BIN, CIN, DIN1, 2, 3 -3.2 mA CC= +5.0 V VR= 2.4 V VEE= -4.94 V GND = 0.0 V Strobe 1, 2,
46、3 -12.8 mA Reverse bias input current IRVCC= +5.0 V VR= 2.4 V VEE= -5.46 V GND = 0.0 V AIN, BIN, CIN, DIN1, 2, 3 50 A CC= +5.0 V VF= 0.4 V VEE= -5.46 V GND = 0.0 V Strobe 1, 2, 3 200 A See footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license
47、from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87560 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions -55C TC +125C Group A subgroups Limits Unit unless
48、otherwise specified Min Max Cases E, F and X DC rapid tests - Continued 3/ Supply current negative IEE 4/VEE= -5.46 V, VCC= +5.0 V 2, 3 -71 mA GND = 0.0 V 1 -65 mA Supply current high ICCHVCC= +5.0 V, VEE= -5.46 V 1, 3 16 mA All inputs = 2.4 V, GND = 0.0 V 2 18 mA Supply current low ICCHVCC= +5.0 V, VEE= -5.46 V 1, 3 25 mA Strobe = 0.4 V, GND = 0.0 V 2 25 mA Functional tests See 4.3.1c 7 Case 2
