1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with N.O.R. 5962-R024-95. 94-10-28 M. A. FRYE B Changes in accordance with N.O.R. 5962-R193-95. 95-08-25 M. A. FRYE C Make changes to SSBW and GFR tests as specified in table I. Redrawn. - ro 00-09-29 R. MONNIN D Make change
2、 to Input bias current (+IIN) test as specified under table I. - ro 00-11-14 R. MONNIN E Replaced reference to MIL-STD-973 with reference to MIL-PRF-38535. - gt 03-12-12 R. MONNIN REV SHET REV SHET REV STATUS REV E E E E E E E E E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY
3、 RICK C. OFFICER DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY CHARLES E. BESORE COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL A. FRYE AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 93-0
4、2-11 MICROCIRCUIT, LINEAR, QUAD, WIDEBAND, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL E SIZE A CAGE CODE 67268 5962-93055 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E072-04 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for Re
5、saleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93055 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL E SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class leve
6、ls consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected
7、in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 93055 01 M C X Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Dev
8、ice classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a
9、non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 CLC415 Quad, wideband, operational amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assuran
10、ce level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s
11、). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device c
12、lasses Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93055 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL E SHEET 3 DSCC FOR
13、M 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VS) 7 V dc Output current (IOUT) 70 mA Common mode input voltage (VCM) .VSDifferential input voltage (VID) 10 V Power dissipation (PD) .1.2 W Lead temperature (soldering, 10 seconds) .+300C Junction temperature (TJ) .+175C Storage temper
14、ature range -65C to +150C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA) .75C/W 1.4 Recommended operating conditions. Supply voltage (VS) 5 V dc Gain range (AV) 1 to 10 Ambient operating temperature range (TA) -55C to +125C 2. APPLICABLE DOCUM
15、ENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of
16、 Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835
17、- Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Sta
18、ndardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for Res
19、aleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93055 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL E SHEET 4 DSCC FORM 2234 APR 97 2.2 Order of precedence. In the event of a conflict between the text of this
20、 drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes
21、 Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M sha
22、ll be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-3
23、8535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics and post irradiation parameter limit
24、s. Unless otherwise specified herein, the electrical performance characteristics and post irradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgro
25、ups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number
26、is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M sh
27、all be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certif
28、icate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in orde
29、r to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of M
30、IL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each
31、 lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A. 3.9 Verific
32、ation and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit
33、 group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-9
34、3055 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL E SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits 2/ Unit Min Max Input bias current (no
35、ninverting) +IIN1,2 01 -13 +13 A 3 -25 +25 Input bias current (inverting) -IIN1 01 -10 +10 A 2 -15 +15 3 -18 +18 Input offset voltage VIORS= 50 1 01 -5.0 +5.0 mV 2 -10.0 +10.0 3 -9.0 +9.0 Average +input bias current drift TC3/ 2 01 -50 +50 nA/C (+IIN) 3 -100 +100 Average input bias current drift TC3
36、/ 2 01 -50 +50 nA/C (-IIN) 3 -125 +125 Average input offset voltage drift TC(VIO) 3/ 2,3 01 -50 +50 V/C Supply current (all channels) ISNo load 1 01 26 mA 2 24 3 27 Input resistance +RIN3/ 1,2 01 600 k 3 300 Output current IOUT3/ 1,2,3 01 50 mA Power supply rejection ratio PSRR +VS= +4.5 V to +5.0 V
37、, 1,3 01 47 dB -VS= -4.5 V to 5.0 V 2 45 Common mode 3/ rejection ratio CMRR VCM= 1 V 4,6 01 45 dB 5 43 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93055 DEFENSE SUPPLY CENT
38、ER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL E SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits 2/ Unit Min Max Small signal bandwidth SSBW -3 dB ba
39、ndwidth, 4/ 4,6 01 105 MHz VOUT25 MHz, 4/ VOUT1 MHz 3/ 4,6 01 -155 dBm 5 -154 (1 Hz) Total integrated noise INV At 1 MHz to 100 MHz 3/ 4,5,6 01 38 V Input noise, non-inverting voltage VN 1 MHz 3/ 1,3 01 3.6 nV Hz 2 4.0 Input noise, inverting current ICN 1 MHz 3/ 1,3 01 14 pA Hz 2 16 Input noise, non
40、-inverting current NCN 1 MHz 3/ 1,3 01 2.6 pA Hz 2 3.0 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93055 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LE
41、VEL E SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits 2/ Unit Min Max Linear phase deviation LPD 0.1 MHz to 75 MHz 3/ 4,6 01 1.0 Degrees 5 1.3 Differential
42、 gain DG1 At 3.58 MHz, 3/ RL= 150 , AV= +2 4,5,6 01 0.08 % DG2 At 4.43 MHz, 3/ RL= 150 , AV= +2 0.1 Differential phase DP1 At 3.58 MHz, 3/ RL= 150 , AV= +2 4,5,6 01 0.08 Degrees DP2 At 4.43 MHz, 3/ RL= 150 , AV= +2 0.1 Crosstalk XT At 5 MHz, 3/ 5/ 4,6 01 60 dB all hostile, input referred 5 59 CXT At
43、 5 MHz, 3/ 6/ 4,6 63 channel to channel 5 62 Output voltage swing +VOUTRL= 100 7/ 4,5 01 +2.5 V 6 +2.3 -VOUT4,5 -2.5 6 -2.3 Input capacitance CIN3/ 4,5,6 01 2.0 pF Output impedance RO dc 3/ 4 01 0.3 5 0.2 6 0.6 Common mode input voltage CMIR 3/ 4,5 01 -2.0 +2.0 V 6 -1.4 +1.4 Slew rate SR Measured 1
44、V with 4,6 01 1200 V/s 4 V step 5 1000 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93055 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL E SHEET 8 DS
45、CC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits 2/ Unit Min Max Rise and fall time TRS 2 V step 3/ 9,11 01 3.0 ns 10 4.0 TRL 5 V step 3/ 9 3.6 10 4.5 11 4.0 Settling
46、 time tS2 V step at 0.1 percent 3/ 9,11 01 18 ns of the fixed value 10 22 Overshoot OS 2 V step 3/ 9,10,11 01 12 % 1/ Unless otherwise specified, VS= 5 V dc, AV= +6, load resistance (RL) = 100 , and feedback resistance (RF) = 500 . 2/ The algebraic convention, whereby the most negative value is a mi
47、nimum and the most positive is a maximum, is used in this table. Negative current shall be defined as conventional current flow out of a device terminal. 3/ If not tested, shall be guaranteed to the limits specified in table I herein. 4/ Tested at TA= +25C limits only. Guaranteed at TA= -55C and TA=
48、 +125C limits. 5/ Three channels are driven simultaneously while observing the output of the undriven fourth channel. 6/ One channel is driven with a 2 VPPpulse while the output of the most affected channel is observed. 7/ This parameter is group A sample tested only and is excluded from final electrical testing, but is guaranteed to the limits specified herein Provided by IHSNot for ResaleNo reproduction or networ
