DLA SMD-5962-94542-1994 MICROCIRCUIT DIGITAL CMOS 32-BIT LOCAL AREA NETWORK COPROCESSOR MONOLITHIC SILICON《硅单片 32位局域网络协处理器 氧化物半导体数字微型电路》.pdf

上传人:fuellot230 文档编号:700450 上传时间:2019-01-01 格式:PDF 页数:30 大小:1.05MB
下载 相关 举报
DLA SMD-5962-94542-1994 MICROCIRCUIT DIGITAL CMOS 32-BIT LOCAL AREA NETWORK COPROCESSOR MONOLITHIC SILICON《硅单片 32位局域网络协处理器 氧化物半导体数字微型电路》.pdf_第1页
第1页 / 共30页
DLA SMD-5962-94542-1994 MICROCIRCUIT DIGITAL CMOS 32-BIT LOCAL AREA NETWORK COPROCESSOR MONOLITHIC SILICON《硅单片 32位局域网络协处理器 氧化物半导体数字微型电路》.pdf_第2页
第2页 / 共30页
DLA SMD-5962-94542-1994 MICROCIRCUIT DIGITAL CMOS 32-BIT LOCAL AREA NETWORK COPROCESSOR MONOLITHIC SILICON《硅单片 32位局域网络协处理器 氧化物半导体数字微型电路》.pdf_第3页
第3页 / 共30页
DLA SMD-5962-94542-1994 MICROCIRCUIT DIGITAL CMOS 32-BIT LOCAL AREA NETWORK COPROCESSOR MONOLITHIC SILICON《硅单片 32位局域网络协处理器 氧化物半导体数字微型电路》.pdf_第4页
第4页 / 共30页
DLA SMD-5962-94542-1994 MICROCIRCUIT DIGITAL CMOS 32-BIT LOCAL AREA NETWORK COPROCESSOR MONOLITHIC SILICON《硅单片 32位局域网络协处理器 氧化物半导体数字微型电路》.pdf_第5页
第5页 / 共30页
点击查看更多>>
资源描述

1、SMD-5962-94542 = 9999996 0064703 Tob W LTR DESCRIPTION DATE (YR-MO-DA) APPROVED REV I I I SHEET I I REV PMIC N/A I I I STANDARD MICROCIRCUIT DRAWING SHEET THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE I I I AMSC NIA REV SHEET PREPARED BY Thorns M. Hes

2、s DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 CHECKED BY Thomas M. Hess 15 16 17 MICROCIRCUIT, DIGITAL, CMOS, 32-BIT LOCAL AREA NETWORK COPROCESSOR, APPROVED BY Monica L. Poelking I I 1 OF 29 I SHEET EC FORM 193 JUL 94 DISTRIBUTION STATEMENT A. Approved for publ ic release; distribution is

3、unlimited. 5962-E413-94 DRAHING APPROVAL DATE 94-10-12 REVISION LEVEL MONOLITHIC SILICON SIZE CAGE CODE 5962-94542 A 67268 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- _I I SMD-5962-94542 = 9999996 O064702 942 m 1. SCOPE 1.1 -. This drawing forms

4、 a part of a one part - one part nuder documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a choice pif cax cutlines and lead finishes are ovailabk and are reflected in the P

5、art or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“. When available, a choice of Radiation Hardness Assurance (RHA) levels

6、are reflected in the PIN. 1.2 H. The PIN shall be as shown in the following example: 5962 - 94542 o1 9, Y X I I I I I I I I t I Lead (see 1.2.5) I Case Dev i ce II Federa 1 RHA Devi ce stock class designator type class out 1 i ne finish designator (see 1.2.1) (see 1.2.2) des i gnator (see 1.2.4) f (

7、see 1.2.3) - f Drawing number 1.2.1 RHA desiqnator. Device class M RHA marked devices shall meet the MIL-1-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the HIL-1-38535 specified RHA levels and shal

8、l be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device t.vpe(s),. The device type(s) shall identify the circuit function as follows: S TANDARDI Z E3 MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER Device t,vpe o1 SIZE 5962-94542 A 1.2.3 Device class d

9、esiqnator. assurance level as follows: DAYTON, OHIO 45444 Generic nuder 82596CA-25 REVISION LEVEL SHEET 2 Circuit function 32-Bi t local area network coprocessor The device class designator shall be a single letter identifying the product Device class Devi ce requirements documentat ion M Vendor sel

10、f-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-1-38535 1.2.4 Case outline(s). The case outline(s) shall be as designated in MIL-STD-1835 and as follows: Out1 ine letter Descriptive desiqnator

11、 Termi na 1 s Packaqe style Y See figure 1 164 Leaded chip carrier wfunformed leads 1.2.5 Lead finish. The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-1-38535 for classes Q and V. Finish letter “X“ shall not be marked on the microcircuit or its packaging. The

12、 “X“ designation is for use in specifications when lead finishes A, E, and C are considered acceptable and interchangeable without preference. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- - - I - - - - - - 4 SMD-5962-94542 = 9999996 0064703 889 1

13、.3 Absolute maximum ratinqs. i-/ Storage tenperature range . Supply voltage with respect to ground range Voltage on any pin with respect to ground range -0.5 V dc to VCC + 0.5 V dc Lead temperature (soldering, 10 seconds) . +300C Junction tenperature . +150C Power dissipation . 1.0 W Thermal resista

14、nce, junction-to-case (6JC): Thermal resistance, junction-to-ambient (6JA): 1.4 Recomnended operatinci conditions. Case operating temperature range . -55C to +125OC Supply voltage range . 1.5 Diaital loqic testinq for device classes Q and V. -65OC to +15OoC -0.5 V dc to +6.5 V dc Case Y . 2.0C/W Cas

15、e Y . lO.O“C/W 4.75 V dc 2 Vcc I 5.25 V dc Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) . 90 percent 2. APPLICABLE MCUMENTS 2.1 Goverrunent specification, standards, bulletin, and handbook. Unless otherwise specified, the following specification, standards,

16、 bulletin, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein. SPEC1 FI CATION MILITARY MIL-1-38535 - Integrated Circuits, Manufacturing, General S

17、pecification for. STANDARDS MILITARY MIL-STD-883 - Test Methods and Procedures for Microelectronics. MIL-STD-973 - Configuration Management. MIL-STD-1835 - Microcircuit Case Outlines. BULLETIN MILITARY MIL-BUL-103 - List of Standardized Military Drawings (SEIDS). HANDBOOK MILITARY MIL-HDBK-780 - Sta

18、ndardized Military Drawings. (Copies of the specification, standards, bu1 letin, and handbook required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity.) 2.2 Order of precedence. In the even

19、t of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take precedence. I/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels my degrade performance and affect re1 iab

20、il ity. 5962-94542 STANDARDIZED SIZE MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL SHEET 3 DESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- SMD-5962-94542 = 9999996 0064704 715 m 3. REQUI

21、REMENTS 3.1 The individual item requirements for device class M shall be in accordance with 1.2.1 of YIL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“ and as specified herein, device manufacturers Quality Management (QM) plan, and as specified herein.

22、 Specified in MIL-STD-883 (see 3.1 herein) for device class M and MIL-1-38535 for device classes Q and V and herein. Item requirements. The individiihi item requirements for device classes Q and V shall be in accordarlce with MIL-1-38535, the 3.2 Desiqn, construction, and physical dimensions. The de

23、sign, construction, and physical dimensions shall be as 3.2.1 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Block diagram. 3.2.4 Radiation exDosure circuit. The radiation exposure circuit shall be as specified when available. 3.3 Electrical performance

24、 characteristics and postirradiation parameter limits. Unless otherwise specified Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. The block diagram shall be as specified on figure 3. herein, the electrical performance characteristics and postirradiation pa

25、rameter 1 imits are as specified in table I and shall apply over the full case operating temperature range. The electrical tests for each subgroup are defined in table I. accordance with MIL-STD-883 (see 3.1 herein). In addition, the manufacturers PIN may also be marked as listed in MIL-BUL-103. Mar

26、king for device classes Q and V shall be in accordance with MIL-1-38535. MIL-STO-883 (see 3.1 herein). The certification mark for device classes Q and V shall be a “QML“ or “9“ as required in MIL-1-38535. manufacturer in order to be listed as an approved source of supply in MIL-BUL-103 (see 6.7.2 he

27、rein). For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.7.1 herein). The certificate of compliance submitted to DESC-EC prior to listing as an approved source of supply for thi

28、s drawing shall affirm that the manufacturers product meets, for device class M, the requirements of MIL-STD-883 (see 3.1 herein), or for device classes Q and V, the requirements of MIL-1-38535 and the requirements herein. 3.1 herein) or for device classes Q and V in MIL-1-38535 shall be provided wi

29、th each lot of microcircuits delivered to this drawing. (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-STO-973. retain the option to review the manufacturers facility and applicable required documentation. shall be made available onshore at t

30、he option of the reviewer. microcircuit group nuMer 105 (see MIL-1-38535, appendix A). 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. 3.5 Markinq. The part shall be marked with the PIN listed in 1.2 herein. Marking for device class M

31、shall be in 3.5.1 Certification/comliance mark. The compliance mark for device class M shall be a “C“ as required in 3.6 Certificate of comliance. For device class M, a certificate of compliance shall be required from a 3.7 Certificate of conformance. A certificate of conformance as required for dev

32、ice class M in MIL-STD-883 (see 3.8 Notification of chanqe for device class M. For device class FI, notification to DESC-EC of change of product 3.9 Verification and review for device class M. For device class M, DESC, DESCs agent, and the acquiring activity Offshore documentation 3.10 Microcircuit

33、group assiqnment for device class M. Device class M devices covered by this drawing shall be in 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. For device class M, sampling and inspection procedures shall be in accordance with For device classes Q and V, sampling and inspection procedur

34、es shall be in accordance MIL-STD-883 (see 3.1 herein), with MIL-1-38535 and the device manufacturers QM plan. 5962-94542 t-t-t- REVISION LEVEL SHEET STANDARD1 Z ED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 DESG FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproductio

35、n or networking permitted without license from IHS-,-,-I I I VIH I I I I I I I I I l I I 1,2,3 I O1 I 2.0 IVcc+O.3 I I I I I REVISION LEVEL SHEET 5 TABLE I. Electrical performance characteristics. I I I I Unit Syrrbol i Conditions iJ I -55C 5 TC I +125“C I I unless otherwise specified I 1 4.75 V I V

36、cc 15.25 V I 1 Group A /Device I Limits subgroups I type I I I I I I I I 1 I I I I 1 Min I Max 1.2.3 I O1 1 -0.3 I 0.8 Test V VIL i I Input low voltage (TTL) V Input high voltage (TTL) Input low voltage (MOS) I VMIL I I I I I I 1 l I I 1,2,3 I O1 I -0.3 I 0.8 I l I I I I V Input high voltage (MOS) I

37、 I I I I I I I I VMIH I I I I 1 0.45 I I 1,2.3 O1 I I 1,2,3 I O1 I 3.7 IVcc+O.3 VOL IIOL = 4.0 m92/ IVcc = 4.75 v 1 I I I V utput low voltage (W V - Input low voltage RXC, TXC VCIL I I I I I I I I I 1,2,3 I O1 I -0.5 I 0.6 V - Input high voltage RXC, TXC VCIH I I I I I I I I I I I I I I 1,2,3 1 O1 I

38、 3.3 IVcp0.5 IOH = 0.9 ITA - 1.0 mA2/ I 1,2,3 I O1 I 2.4 1 I I I I I vcc = 4.75 v I I V V VOH Output high voltage (TTL) Input leakage current ILI I I I I I I I I 1.2.3 I O1 1+15 I -15 CiA Output leakage current I I I I I 1,2,3 I O1 1+15 I -15 I I I I CiA Supply current Icc V c = 5.25 V ! = 25 MHz CL

39、K input capacitance CCLK Frequency = 1 MHz See 4.4.1 I I IO1 I I I 20 I PF Input capacitance PF Frequency = 1 MHz See 4.4.1 4 o1 i 10 I I I See footnotes at end of table. t STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 I 5962-94542 DESC FORM 193A JUL 91 Provided

40、by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-TABLE I. Electrical perforniince characteristics - Continued. Test I Conditions I/ I Group A I srno1 I I -55C S TC S *125OC I subgroups I 4.75 Vi Vcc S 5.25 V I I unless otherwise specified I Unit ievice type Li

41、mits I Min I Max I I npu t/output capacitance I COUT Ifrequency - 1 MHz ISee 4.4.1 I 14 ! o1 PF i 12 I I I I 1 I I 73 I Functional test I I I I I I I Operating frequency l I I I ISee 4.4.lb I 9*10111 Il x TTL clock input I I I o1 I I I I 1 12.5 I 25 HHz o1 I 40 I 80 I I I I ! I 9110111 tl I See figu

42、re 4 7 o1 Clock period ns - o1 Clock period stability I tla I Adjacent CLK delta I See figure 4 I I I 91011 ns I 0.11 I I 14 I 1 I Clock high time I I See figure 4 tg IAt 2.0 V I I I 9,10,11 I I o1 ns Clock low time I I See figure 4 t3 IAt 0.8 V I I I 9110*11 o1 14 i -.-.I- I 14 ns I I I I I I Clock

43、 rise time I t4 10.8 V to 2.0 V 3/ I 9,10,11 I 1 I See figure 4 ns o1 I 14 I 2 i 18 I 1 l I I I ns Clock fall time t5 10.8 V to 2.0 V3/ I See figure 4 I I I 9n10*11 I o1 I I I A2-A31. BEn VALID DELAY I 1 9,10,11 1 I I t6 I See figure 4 ns o1 i I I 7 BLAST valid delay I I 9,10,11 I I I t6a I See figu

44、re 4 ns - PCHK valid delay I I t6b 1 See figure 4 I I I 9810*11 I ns - LOCK valid delay I I t6c I See figure 4 I I I I 9,10,11 I ns See footnotes at end of table. 5962-94542 REVISION LEVEL STANDARD1 ZED MILITARY DRAWING DEFENSE ELECTRNICS SUPPLY CENTER DAYTON, OHIO 45444 SHEET 6 DESC FORM 193A JUL 9

45、1 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-I Limits I Unit I I I I Conditions J I Group A (Device I -55C - TC I +125OC I subgroups I type 1 I Min 4.75 V 6 Vcc 6 5.25 V I I unless otherwise specified I I STANDARDIZED SIZE MILITARY DRAWING A DEF

46、ENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL l l I 5962-94542 SHEET 7 See figure 4 i 9,10,11 j o1 i 3 ! ! ! See figure 4 9,10,11 I I o1 I 3 I See figure 4 I 9,10,11 I I I See figure 4 I 9,10,11 I I I See figure 4 I 9,10,11 I I o1 I 3 I o1 I 2 I I I o1 I 3 I 11 51 See figure 4 9.1

47、0,11 9,10,11 9,10,11 51 See figure 4 i 9,10,11 I I I i 9.10,11 o1 j 7 I l 2 I o1 I 5 i l I O1 I 8 I o1 i 3 i i i 1- I I I I 9.10,11 I o1 I 9 I I I Max i L I 30 i ns i I I I 19 I ns b 30 I ns i I I I I I 20 I ns 21 I ns 30 I ns 19 i ns I I i ns I I i ns I I 1 ns I I I ns i ns I I Provided by IHSNot f

48、or ResaleNo reproduction or networking permitted without license from IHS-,-,-I REVISION LEVEL I ! STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 TABLE 1. Electrical performance characteristics - Continued. Limits Test Conditions I/ -55C ; TC S +125C 4.75 V S Vcc

49、S 5.25 V unless otherwise specified Group A sdgroups evice tYPe Unit Symbol I Min I Max - o1 - RDY Set-up tim t17a - 51 See figure 4 9,10,11 81 I 1 31 - o1 - BRDY hold tim 9,10,11 ns i i L I I o1 14 I 9,10,11 - RDY hold time ns 9,10,11 ns DO-D31, DPn read Set-up time DO-D31, read hold tim 9,10,11 AHOLD Set-up time - 41 5/ See figur

展开阅读全文
相关资源
猜你喜欢
相关搜索

当前位置:首页 > 标准规范 > 国际标准 > 其他

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1