DLA SMD-5962-95668 REV B-2007 MICROCIRCUIT LINEAR OPERATIONAL AMPLIFIER MONOLITHIC SILICON《运算放大器硅单片电路线型微电路》.pdf

上传人:inwarn120 文档编号:700725 上传时间:2019-01-01 格式:PDF 页数:11 大小:75.27KB
下载 相关 举报
DLA SMD-5962-95668 REV B-2007 MICROCIRCUIT LINEAR OPERATIONAL AMPLIFIER MONOLITHIC SILICON《运算放大器硅单片电路线型微电路》.pdf_第1页
第1页 / 共11页
DLA SMD-5962-95668 REV B-2007 MICROCIRCUIT LINEAR OPERATIONAL AMPLIFIER MONOLITHIC SILICON《运算放大器硅单片电路线型微电路》.pdf_第2页
第2页 / 共11页
DLA SMD-5962-95668 REV B-2007 MICROCIRCUIT LINEAR OPERATIONAL AMPLIFIER MONOLITHIC SILICON《运算放大器硅单片电路线型微电路》.pdf_第3页
第3页 / 共11页
DLA SMD-5962-95668 REV B-2007 MICROCIRCUIT LINEAR OPERATIONAL AMPLIFIER MONOLITHIC SILICON《运算放大器硅单片电路线型微电路》.pdf_第4页
第4页 / 共11页
DLA SMD-5962-95668 REV B-2007 MICROCIRCUIT LINEAR OPERATIONAL AMPLIFIER MONOLITHIC SILICON《运算放大器硅单片电路线型微电路》.pdf_第5页
第5页 / 共11页
点击查看更多>>
资源描述

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update drawing boilerplate to current requirements of MIL-PRF-38534. 01-04-27 Raymond Monnin B Update drawing. -gz 07-04-10 Robert M. Heber REV SHEET REV SHEET REV STATUS REV B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPA

2、RED BY Gary Zahn DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Michael C. Jones COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Kendall A. Cottongim MICROCIRCUIT, LINEAR, OPERATIONAL AMPLIFIER, MONOLITHIC SIL

3、ICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-09-07 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-95668 SHEET 1 OF 10 DSCC FORM 2233 APR 97 5962-E347-07 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROC

4、IRCUIT DRAWING SIZE A 5962-95668 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finis

5、hes which are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN. 1.2 PIN. The PIN shall be as shown in the following example: 5962 - 95668 01 H X X Federal RHA Device Device Case Lead stock cl

6、ass designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 Radiation hardness assurance (RHA) designator. RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropr

7、iate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 MSK 1259B Operational amplifier 1.2.3 Device class designator. This device class designator shall be a single

8、letter identifying the product assurance level. All levels are defined by the requirements of MIL-PRF-38534 and require QML Certification as well as qualification (Class H, K, and E) or QML Listing (Class G and D). The product assurance levels are as follows: Device class Device performance document

9、ation K Highest reliability class available. This level is intended for use in space applications. H Standard military quality class level. This level is intended for use in applications where non-space high reliability devices are required. G Reduced testing version of the standard military quality

10、 class. This level uses the Class H screening and In-Process Inspections with a possible limited temperature range, manufacturer specified incoming flow, and the manufacturer guarantees (but may not test) periodic and conformance inspections (Group A, B, C, and D). E Designates devices which are bas

11、ed upon one of the other classes (K, H, or G) with exception(s) taken to the requirements of that class. These exception(s) must be specified in the device acquisition document; therefore the acquisition document should be reviewed to ensure that the exception(s) taken will not adversely affect syst

12、em performance. D Manufacturer specified quality class. Quality level is defined by the manufacturers internal, QML certified flow. This product may have a limited temperature range. 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descripti

13、ve designator Terminals Package style X See figure 1 8 Flange mount 1.2.5 Lead finish. The lead finish shall be as specified in MIL-PRF-38534. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95668 DEFENSE SUP

14、PLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltages (V). 18 V dc Differential Input voltage . 6.0 V dc Voltage at either input terminal . V+ to V- Peak output current (10% duty cycle) . 100 mA Maximum power dis

15、sipation (PD) 2/ 1.9 W Storage temperature range. -65C to +150C Lead temperature (soldering, 10 seconds) . +300C Thermal resistance, junction-to-case (JC) 21C/W Thermal resistance, junction-to-ambient (JA). 30C/W Junction temperature (TJ) . +175C 1.4 Recommended operating conditions. Positive supply

16、 voltage (V+) +4.5 V dc to +15.5 V dc Negative supply voltage (V-). -4.5 V dc to -15.5 V dc Case operating temperature range (TC) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this dr

17、awing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38534 - Hybrid Microcircuits, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Met

18、hod Standard Microcircuits. MIL-STD-1835 - Interface Standard for Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.

19、daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of thi

20、s drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item performance requirements for device classes D, E, G, H, and K shall be in accordance wit

21、h MIL-PRF-38534. Compliance with MIL-PRF-38534 shall include the performance of all tests herein or as designated in the device manufacturers Quality Management (QM) plan or as designated for the applicable device class. The manufacturer may eliminate, modify or optimize the tests and inspections he

22、rein, however the performance requirements as defined in MIL-PRF-38534 shall be met for the applicable device class. In addition, the modification in the QM plan shall not affect the form, fit, or function of the device for the applicable device class. 1/ Stresses above the absolute maximum ratings

23、may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ TC +125C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95668 DEFENSE SU

24、PPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38534 and herein. 3.2.1 Case outline(s). The case outline(s) shall be in

25、 accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply ov

26、er the full specified operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking of device(s). Marking of device(s) shall be in accordance wit

27、h MIL-PRF-38534. The device shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers vendor similar PIN may also be marked. 3.6 Data. In addition to the general performance requirements of MIL-PRF-38534, the manufacturer of the device described herein shall maintain the elec

28、trical test data (variables format) from the initial quality conformance inspection group A lot sample, for each device type listed herein. Also, the data should include a summary of all parameters manually tested, and for those which, if any, are guaranteed. This data shall be maintained under docu

29、ment revision level control by the manufacturer and be made available to the preparing activity (DSCC-VA) upon request. 3.7 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to supply to this drawing. The certificate of compliance (original copy) s

30、ubmitted to DSCC-VA shall affirm that the manufacturers product meets the performance requirements of MIL-PRF-38534 and herein. 3.8 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38534 shall be provided with each lot of microcircuits delivered to this drawing. 4. VER

31、IFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38534 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 4.2 Screening.

32、 Screening shall be in accordance with MIL-PRF-38534. The following additional criteria shall apply: a. Preseal burn-in test, method 1030 of MIL-STD-883, (optional for classes H and K). (1) Test condition C or D. The test circuit shall be maintained by the manufacturer under document revision level

33、control and shall be made available to either DSCC-VA or the acquiring activity upon request. Also, the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1030 of MIL-STD-883. (2) TAas specified in accordanc

34、e with table I of method 1015 of MIL-STD-883. b. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to either DSCC-VA or the acquiring activity upon req

35、uest. Also, the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TAas specified in accordance with table I of method 1015 of MIL-STD-883. c. Interim and final electrical test param

36、eters shall be as specified in table II herein, except interim electrical parameter tests prior to burn-in are optional at the discretion of the manufacturer. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-9

37、5668 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits Test Symbol Conditions -55C TA +125C V = 15 V dc unless otherwise specified Group A subgroups Device type Min Max Unit Common mode inpu

38、t voltage range VINf = 100 Hz, TA= +25C 4 01 10 V 1 2.0 Input offset voltage VIO2,3 01 4.5 mV 1 2.5 Input bias current IIB2,3 01 2600 nA 1 1.0 Input offset current IIO2,3 01 1025 nA 1 65 Power supply rejection ratio PSRR V = 5 V dc to 18 V dc 2,3 01 62 dB 1 13 Quiescent current ICCVIN= 0 V 2,3 01 16

39、 mA Common mode rejection ratio CMRR VCM= 10 V, f 500, TA= +25C 4 01 10.0 V Output current IOPRLOAD= 200, VOUT= 10 V, TA= +25C 4 01 50.0 mA Open loop gain AVRLOAD 500, VOUT= 5 V, f = 100 Hz, TA= +25C 4 01 84 dB Full power bandwidth FPBW RLOAD 500, VOUT= 20 Vp-p, TA= +25C 4 01 2.5 MHz See footnotes a

40、t end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95668 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance ch

41、aracteristics - Continued. Limits Test Symbol Conditions -55C TA +125C V = 15 V dc unless otherwise specified Group A subgroups Device type Min Max Unit Unity gain bandwidth 1/ BW VOUT= 90 mVp-p, TA= +25C 4 01 34 MHz Rise time 1/ trAAVCL= -1, TA= +25C 4 01 10 ns Overshoot 1/ OS AAVCL= -1, TA= +25C 4

42、 01 15 % Slew rate 1/ SR AAVCL= -1, TA= +25C 4 01 160 V/s 1/ The parameter specified shall be guaranteed if not tested. Values are for design reference. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95668 D

43、EFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 Case outline X. Millimeters InchesSymbol Min Max Min MaxA 39.62 1.560B 18.92 19.56 .745 .770C 10.16 .400D 0.89 1.43 .035 .045E 2.54 .100F 40 BSC 40 BSCG 12.7 BSC .500 BSCH 29.90 30.40 1.177 1.197J

44、15.06 BSC .593 BSCK 6.22 .245Q 3.84 4.09 .151 .161R 25.91 1.020NOTES: 1. The U. S. preferred system of measurement is the metric SI. This case outline was originally designed using inch-pound units of measurement, in the event of conflict between the metric and inch-pound units, the inch-pound shall

45、 take precedence. 2. Leads in true position within 0.01 inch (0.25 mm) R at MMC at seating plane. 3. Pin numbers are for reference and may not be marked on package. FIGURE 1. Case outline(s). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD M

46、ICROCIRCUIT DRAWING SIZE A 5962-95668 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 8 DSCC FORM 2234 APR 97 Device type 01 Case outline X Terminal number Terminal symbol 1 2 3 4 5 6 7 8 Output V+ No connection VOS - Input + Input V-VOS FIGURE 2. Terminal connections

47、. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95668 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 9 DSCC FORM 2234 APR 97 TABLE II. Electrical test requirements. MIL-PRF-

48、38534 test requirements Subgroups (in accordance with MIL-PRF-38534, group A test table) Interim electrical parameters 1 Final electrical parameters 1*, 2, 3, 4 Group A test requirements 1, 2, 3, 4 Group C end-point electrical parameters 1 End-point electrical parameters for radiation hardness assurance (RHA) devices Not applicable * PDA applies to subgroup 1. 4.

展开阅读全文
相关资源
猜你喜欢
  • ASTM E2027-2005 Standard Practice for Conducting Proficiency Tests in the Chemical Analysis of Metals Ores and Related Materials《在金属、矿和相关材料的化学分析中进行技术检查的标准操作规程》.pdf ASTM E2027-2005 Standard Practice for Conducting Proficiency Tests in the Chemical Analysis of Metals Ores and Related Materials《在金属、矿和相关材料的化学分析中进行技术检查的标准操作规程》.pdf
  • ASTM E2027-2009 Standard Practice for Conducting Proficiency Tests in the Chemical Analysis of Metals Ores and Related Materials《在金属、矿和相关材料的化学分析中进行技术检查的标准实施规程》.pdf ASTM E2027-2009 Standard Practice for Conducting Proficiency Tests in the Chemical Analysis of Metals Ores and Related Materials《在金属、矿和相关材料的化学分析中进行技术检查的标准实施规程》.pdf
  • ASTM E2027-2017 Standard Practice for Conducting Proficiency Tests in the Chemical Analysis of Metals Ores and Related Materials《针对金属 矿石及相关材料的化学分析所需的熟练度测验的标准实施规程》.pdf ASTM E2027-2017 Standard Practice for Conducting Proficiency Tests in the Chemical Analysis of Metals Ores and Related Materials《针对金属 矿石及相关材料的化学分析所需的熟练度测验的标准实施规程》.pdf
  • ASTM E2027-2017e1 Standard Practice for Conducting Proficiency Tests in the Chemical Analysis of Metals Ores and Related Materials《金属矿石及相关材料化学分析能力测试的标准实施规程》.pdf ASTM E2027-2017e1 Standard Practice for Conducting Proficiency Tests in the Chemical Analysis of Metals Ores and Related Materials《金属矿石及相关材料化学分析能力测试的标准实施规程》.pdf
  • ASTM E2029-1999(2004) Standard Test Method for Volumetric and Mass Flow Rate Measurement in a Duct Using Tracer Gas Dilution《用示踪气体稀释法测量管道中体积和质量流量率的标准试验方法》.pdf ASTM E2029-1999(2004) Standard Test Method for Volumetric and Mass Flow Rate Measurement in a Duct Using Tracer Gas Dilution《用示踪气体稀释法测量管道中体积和质量流量率的标准试验方法》.pdf
  • ASTM E2029-2011 Standard Test Method for Volumetric and Mass Flow Rate Measurement in a Duct Using Tracer Gas Dilution《管道体积和质量流率追踪气体稀释法测定的标准试验方法》.pdf ASTM E2029-2011 Standard Test Method for Volumetric and Mass Flow Rate Measurement in a Duct Using Tracer Gas Dilution《管道体积和质量流率追踪气体稀释法测定的标准试验方法》.pdf
  • ASTM E2030-2007 Standard Guide for Recommended Uses of Photoluminescent (Phosphorescent) Safety Markings《推荐使用的荧光(磷光)安全标记的标准指南》.pdf ASTM E2030-2007 Standard Guide for Recommended Uses of Photoluminescent (Phosphorescent) Safety Markings《推荐使用的荧光(磷光)安全标记的标准指南》.pdf
  • ASTM E2030-2008 Standard Guide for Recommended Uses of Photoluminescent (Phosphorescent) Safety Markings.pdf ASTM E2030-2008 Standard Guide for Recommended Uses of Photoluminescent (Phosphorescent) Safety Markings.pdf
  • ASTM E2030-2009 Standard Guide for Recommended Uses of Photoluminescent (Phosphorescent) Safety Markings.pdf ASTM E2030-2009 Standard Guide for Recommended Uses of Photoluminescent (Phosphorescent) Safety Markings.pdf
  • 相关搜索

    当前位置:首页 > 标准规范 > 国际标准 > 其他

    copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
    备案/许可证编号:苏ICP备17064731号-1