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JIS K 0147-2-2017 4896 Surface chemical analysis -- Vocabulary -- Part 2 Terms used in scanning-probe microscopy《表面化学分析 词汇 第2部分 扫描探针显微镜用术语》.pdf 70

JIS K 0147-2-2017 4896 Surface chemical analysis -- Vocabulary -- Part 2 Terms used in scanning-probe microscopy《表面化学分析 词汇 第2部分 扫描探针显微镜用术语》.pdfJIS K 0147-2-2017 4896 Surface chemical analysis -- Vocabulary -- Part 2 Terms used in scanning-probe microscopy《表面化学分析 词汇 第2部分 扫描探针显微镜用术语》.pdf

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JIS K 0147-1-2017 1263 Surface chemical analysis -- Vocabulary -- Part 1 General terms and terms used in spectroscopy《表面化学分析 词汇 第1部分 通用术语和用于光谱学的术语》.pdf 127

JIS K 0147-1-2017 1263 Surface chemical analysis -- Vocabulary -- Part 1 General terms and terms used in spectroscopy《表面化学分析 词汇 第1部分 通用术语和用于光谱学的术语》.pdfJIS K 0147-1-2017 1263 Surface chemical analysis -- Vocabulary -- Part 1 General terms and terms used in spectroscopy《表面化学分析 词汇 第1部分 通用术语和用于光谱学的术语》.pdf

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JIS K 0146-2002 Surface chemical analysis -- Sputter depth profiling -- Optimization using layered systems as reference materials《表面化学分析 溅镀深度造型 利用分层系统作为标准物质的优选法.pdf 28

JIS K 0146-2002 Surface chemical analysis -- Sputter depth profiling -- Optimization using layered systems as reference materials《表面化学分析 溅镀深度造型 利用分层系统作为标准物质的优选法.pdfJIS K 0146-2002 Surface chemical analysis -- Sputter depth profiling -- Optimization using layered systems as reference materials《表面化学分析 溅镀深度造型 利用分层系统作为标准物质的优选法.pdf

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JIS K 0145-2002 Surface chemical analysis -- X-ray photoelectron spectrometers -- Calibration of energy scales《表面化学分析 X射线光电子分光计 能量刻度的校准》.pdf 38

JIS K 0145-2002 Surface chemical analysis -- X-ray photoelectron spectrometers -- Calibration of energy scales《表面化学分析 X射线光电子分光计 能量刻度的校准》.pdfJIS K 0145-2002 Surface chemical analysis -- X-ray photoelectron spectrometers -- Calibration of energy scales《表面化学分析 X射线光电子分光计 能量刻度的校准》.pdf

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JIS K 0143-2000 Surface chemical analysis -- Secondary ion mass spectrometry -- Determination of boron atomic concentration in silicon using uniformly doped mat.pdf 25

JIS K 0143-2000 Surface chemical analysis -- Secondary ion mass spectrometry -- Determination of boron atomic concentration in silicon using uniformly doped mat.pdfJIS K 0143-2000 Surface chemical analysis -- Secondary ion mass spectrometry -- Determination of boron atomic concentration in silicon using uniformly doped mat.pdf

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JIS H 0611-1994 Methods of measurement of thickness thickness variation and bow for silicon wafer《硅片厚度、厚度变化及弯曲的测量方法》.pdf 9

JIS H 0611-1994 Methods of measurement of thickness thickness variation and bow for silicon wafer《硅片厚度、厚度变化及弯曲的测量方法》.pdfJIS H 0611-1994 Methods of measurement of thickness thickness variation and bow for silicon wafer《硅片厚度、厚度变化及弯曲的测量方法》.pdf

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JIS H 0610-1966 Method of measurement of etch pit density of germanium crystal《锗晶体浸蚀点密度的测定方法》.pdf 8

JIS H 0610-1966 Method of measurement of etch pit density of germanium crystal《锗晶体浸蚀点密度的测定方法》.pdfJIS H 0610-1966 Method of measurement of etch pit density of germanium crystal《锗晶体浸蚀点密度的测定方法》.pdf

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JIS H 0607-1978 Determination of conductivity type in germanium by thermoelectromotive method《用热电动势法测定锗导电类型》.pdf 7

JIS H 0607-1978 Determination of conductivity type in germanium by thermoelectromotive method《用热电动势法测定锗导电类型》.pdfJIS H 0607-1978 Determination of conductivity type in germanium by thermoelectromotive method《用热电动势法测定锗导电类型》.pdf

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JIS H 0602-1995 Testing method of resistivity for silicon crystals and silicon wafers with four-point probe《用四点探针法对硅晶体和硅片电阻率的测试方法》.pdf 17

JIS H 0602-1995 Testing method of resistivity for silicon crystals and silicon wafers with four-point probe《用四点探针法对硅晶体和硅片电阻率的测试方法》.pdfJIS H 0602-1995 Testing method of resistivity for silicon crystals and silicon wafers with four-point probe《用四点探针法对硅晶体和硅片电阻率的测试方法》.pdf

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JIS H 0543-2014 0625 Testing method of determining bendability for magnesium alloy sheets《镁合金片用弯曲性测定试验方法》.pdf 14

JIS H 0543-2014 0625 Testing method of determining bendability for magnesium alloy sheets《镁合金片用弯曲性测定试验方法》.pdfJIS H 0543-2014 0625 Testing method of determining bendability for magnesium alloy sheets《镁合金片用弯曲性测定试验方法》.pdf

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