IEEE C37 301-2009 en High-Voltage Switchgear (Above 1000 V) Test Techniques Partial Discharge Measurements《高压开关设备(大于1000V)测试技术 局部放电测量》.pdf

1、IEEE Std C37.301-2009IEEE Standard for High-Voltage Switchgear (Above 1000 V) Test TechniquesPartial Discharge MeasurementsIEEE3 Park Avenue New York, NY 10016-5997, USA20 March 2009IEEE Power +1 978 750 8400. Permission to photocopy portions of any individual standard for educational classroom use

2、can also be obtained through the Copyright Clearance Center. iv Copyright 2009 IEEE. All rights reserved. Introduction This introduction is not part of IEEE Std C37.301-2009, IEEE Standard for High-Voltage Switchgear (Above 1000 V) TestsPartial Discharge Measurements. A partial discharge is a locali

3、zed dielectric breakdown of a section of dielectrically stressed insulation path that occurs generally in voids, cracks, or interfaces within that insulating system or from the sharp edges of energized apparatus parts. These discharges may or may not exhibit a glow discharge, based on location and t

4、he intensity of these discharges. The classic form of Corona is usually denoted by a visual glow or dielectric breakdown of the insulating air or gas around overstressed conductors or the sharp edges of energized apparatus parts. Radio influence voltage (RIV) measurements are made to determine the e

5、xtent of radio interference generated by this Corona and the corrective measures that should be made. This Corona, when associated with the self-restoring insulation of the apparatus, may not necessarily contribute to insulation damage. In contrast, other types of partial discharges are localized di

6、electric breakdowns of a section in an insulation path where the discharges occur in voids, cracks, or interfaces of solid and/or solid/gas dielectrics. These localized discharges are undesirable because of the possible deterioration of that insulation with the formation of ionized gas due to this b

7、reakdown that may accumulate at or in a critical stress region. This generally involves non-self-restoring insulation that may be subject to permanent damage. Partial discharge measurements may be made on the basis of the resultant momentary change in the voltage at the terminals of the device. Such

8、 a change may be expressed as a voltage change (RIV in microvolts) or by calibration as an apparent charge. When injected between the terminals of the device, this apparent charge, measured in picocoulombs (pC), would cause the same voltage change as that resulting from the partial discharge. The in

9、itial efforts at measuring partial discharge levels on apparatus to provide acceptance criteria between user and manufacturer utilized NEMA 107-1987, Methods of Measurement of Radio Influence Voltage (RIV) of High-Voltage Apparatus. However, it has been determined that this narrow frequency band mea

10、suring system has limitations and that measuring partial discharges in terms of apparent charge has many advantages over that of the RIV approach. These advantages include the following: a) The internal and stray capacitance of differing switchgear and/or components is accounted for by the calibrati

11、on procedure. Thus, the measured value is related to the partial discharge level. b) The partial discharge measurements are, in most cases, not affected by local radio broadcast signals. It should be noted that apparent charge measurements may be made on either a wide-band or narrow-band basis. Part

12、ial discharge measurement is recognized as a helpful mean to ascertain the insulation quality. Most IEEE standards developed by the Recloser and Other Distribution Equipment subcommittee (RODE) of the IEEE Switchgear Committee now specify partial discharge measurement as a design (type) test and pro

13、duction (routine) test on equipment that use a non self-restoring dielectric as the primary insulation. This standard is intended to supersede the IEEE Std 1291-1993, IEEE Guide for Partial Discharge Measurement in Power Switchgear. This standard adopts the IEC 60270:2000 as the base document and fo

14、rms main part of this standard. Specific IEEE requirements for switchgear are contained in normative Annex I. Other useful data on pattern recognition is given in informative Annex J. Informative Annex K contains a bibliography. v Copyright 2009 IEEE. All rights reserved. Notice to users Laws and re

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21、 http:/standards.ieee.org. Errata Errata, if any, for this and all other standards can be accessed at the following URL: http:/standards.ieee.org/reading/ieee/updates/errata/index.html. Users are encouraged to check this URL for errata periodically. Interpretations Current interpretations can be acc

22、essed at the following URL: http:/standards.ieee.org/reading/ieee/interp/ index.html. vi Copyright 2009 IEEE. All rights reserved. Patents Attention is called to the possibility that implementation of this standard may require use of subject matter covered by patent rights. By publication of this st

23、andard, no position is taken with respect to the existence or validity of any patent rights in connection therewith. The IEEE is not responsible for identifying Essential Patent Claims for which a license may be required, for conducting inquiries into the legal validity or scope of Patents Claims or

24、 determining whether any licensing terms or conditions provided in connection with submission of a Letter of Assurance, if any, or in any licensing agreements are reasonable or non-discriminatory. Users of this standard are expressly advised that determination of the validity of any patent rights, a

25、nd the risk of infringement of such rights, is entirely their own responsibility. Further information may be obtained from the IEEE Standards Association. Participants At the time this standard was submitted to the IEEE-SA Standards Board for approval, the Administrative Subcommittee Working Group C

26、37.301 Working Group had the following membership: Marcel Fortin, Chair Franois Soulard, Vice Chair J. G. Angelis. Frank P. DeCesaro Lawrence B. Farr Edward M. Jankowich T. W. Olsen Miklos J. Orosz Donald M. Parker Gerard Schoonenberg James E. Smith Brian T. Steinbrecher Tom Tobin The following memb

27、ers of the individual balloting committee voted on this standard. Balloters may have voted for approval, disapproval, or abstention. Stan Arnot Ali Al Awazi Steven Bezner Thomas Bishop Harvey Bowles Steven Brockschink Ted Burse Eldridge Byron Bill Chiu Tommy Cooper Frank P. DeCesaro Gary L. Donner L

28、ouis Doucet Dana Dufield Donald Dunn Douglas J. Edwards Gary Engmann Paul Forquer Marcel Fortin Edwin Goodwin Randall Groves Bal K. Gupta Ronald Hartzel Wolfgang Haverkamp Steven Hensley Gary Heuston Scott Hietpas Werner Hoelzl R. Jackson Edward M. Jankowich James Jones Joseph L. Koepfinger Jim Kulc

29、hisky Saumen Kundu Chung-Yiu Lam Benjamin Lanz John Leach Maurice Linker R. Long G. Luri Frank Mayle William McDermid Gary Michel Georges Montillet Charles Morse Jeffrey Nelson Michael S. Newman Joe Nims George Nourse T. W. Olsen Miklos J. Orosz Ulrich Pohl Iulian Profir Anthony Ricciuti Johannes Ri

30、ckmann Michael Roberts Thomas Rozek Bartien Sayogo Devki Sharma James E. Smith James Smith Jerry Smith Franois Soulard David Stone Michael Swearingen S. Thamilarasan Tom Tobin John Vergis Waldemar Von Miller Loren Wagenaar John Webb Hugh Zhu Sandeep Zope vii Copyright 2009 IEEE. All rights reserved.

31、 When the IEEE-SA Standards Board approved this standard on 30 January 2009, it had the following membership: Robert M. Grow, Chair Thomas Prevost, Vice Chair Steve M. Mills, Past Chair Judith Gorman, Secretary Victor Berman Richard DeBlasio Andy Drozd Mark Epstein Alexander Gelman William Goldbach

32、Arnie Greenspan Ken Hanus Jim Hughes Richard Hulett Young Kyun Kim Joseph L. Koepfinger* John Kulick David J. Law Glenn Parsons Ron Petersen Chuck Powers Narayanan Ramachandran Jon Walter Rosdahl Anne-Marie Sahazizian Malcolm Thaden Howard Wolfman Don Wright *Member Emeritus Also included are the fo

33、llowing nonvoting IEEE-SA Standards Board liaisons: Satish K. Aggarwal, NRC Representative Michael Janezic, NIST Representative Lisa Perry IEEE Standards Project Editor Matthew J. Ceglia IEEE Standards Program Manager, Technical Program Development viii Copyright 2009 IEEE. All rights reserved. Cont

34、ents of IEEE Adoption of IEC 60270:2000 IEC 60270:2000 . 1 Annex H (informative) Other reference standard and symbols 52 Annex I (normative) Testing procedures 53 I.1 Introduction 53 I.2 Conditioning of the test object . 53 I.3 Test procedure 53 Annex J (informative) PD pattern recognition . 55 J.1

35、Introduction 55 J.2 Noises . 55 J.3 Pattern recognition . 59 Annex K (informative) IEEE bibliography 62 IEEE Standard for High-Voltage Switchgear (Above 1000 V) Test TechniquesPartial Discharge Measurements IMPORTANT NOTICE: This standard is not intended to ensure safety, security, health, or enviro

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38、. NORME INTERNATIONALECEIIECINTERNATIONAL STANDARD 60270Troisime ditionThird edition2000-12Techniques des essais haute tension Mesures des dcharges partielles High-voltage test techniques Partial discharge measurements Numro de rfrence Reference number CEI/IEC 60270:2000 Numrotation des publications

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