ImageVerifierCode 换一换
格式:PDF , 页数:17 ,大小:162.35KB ,
资源ID:689040      下载积分:10000 积分
快捷下载
登录下载
邮箱/手机:
温馨提示:
如需开发票,请勿充值!快捷下载时,用户名和密码都是您填写的邮箱或者手机号,方便查询和重复下载(系统自动生成)。
如填写123,账号就是123,密码也是123。
特别说明:
请自助下载,系统不会自动发送文件的哦; 如果您已付费,想二次下载,请登录后访问:我的下载记录
支付方式: 支付宝扫码支付 微信扫码支付   
注意:如需开发票,请勿充值!
验证码:   换一换

加入VIP,免费下载
 

温馨提示:由于个人手机设置不同,如果发现不能下载,请复制以下地址【http://www.mydoc123.com/d-689040.html】到电脑端继续下载(重复下载不扣费)。

已注册用户请登录:
账号:
密码:
验证码:   换一换
  忘记密码?
三方登录: 微信登录  

下载须知

1: 本站所有资源如无特殊说明,都需要本地电脑安装OFFICE2007和PDF阅读器。
2: 试题试卷类文档,如果标题没有明确说明有答案则都视为没有答案,请知晓。
3: 文件的所有权益归上传用户所有。
4. 未经权益所有人同意不得将文件中的内容挪作商业或盈利用途。
5. 本站仅提供交流平台,并不能对任何下载内容负责。
6. 下载文件中如有侵权或不适当内容,请与我们联系,我们立即纠正。
7. 本站不保证下载资源的准确性、安全性和完整性, 同时也不承担用户因使用这些下载资源对自己和他人造成任何形式的伤害或损失。

版权提示 | 免责声明

本文(DLA DSCC-DWG-V62 13610-2013 MICROCIRCUIT LINEAR WIDEBAND LOW DISTORTION DIFFERENTIAL AMPLIFIER MONOLITHIC SILICON.pdf)为本站会员(explodesoak291)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA DSCC-DWG-V62 13610-2013 MICROCIRCUIT LINEAR WIDEBAND LOW DISTORTION DIFFERENTIAL AMPLIFIER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE APPROVED Prepared in accordance with ASME Y14.24 Vendor item drawing REV PAGE REV PAGE REV STATUS OF PAGES REV PAGE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dl

2、a.mil/ Original date of drawing YY-MM-DD CHECKED BY RAJESH PITHADIA TITLE MICROCIRCUIT, LINEAR, WIDEBAND, LOW DISTORTION, DIFFERENTIAL AMPLIFIER, MONOLITHIC SILICON 13-07-01 APPROVED BY CHARLES F. SAFFLE SIZE A CODE IDENT. NO. 16236 DWG NO. V62/13610 REV PAGE 1 OF 17 AMSC N/A 5962-V048-13 Provided b

3、y IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DLA LAND AND MARITIME COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/13610 REV PAGE 2 1. SCOPE 1.1 Scope. This drawing documents the general requirements of a high performance wideband, low distortion, di

4、fferential amplifier microcircuit, with an operating temperature range of -55C to +125C. 1.2 Vendor Item Drawing Administrative Control Number. The manufacturers PIN is the item of identification. The vendor item drawing establishes an administrative control number for identifying the item on the en

5、gineering documentation: V62/13610 - 01 X E Drawing Device type Case outline Lead finish number (See 1.2.1) (See 1.2.2) (See 1.2.3) 1.2.1 Device type(s). Device type Generic Circuit function 01 THS4500-EP Wideband, low distortion, differential amplifier 1.2.2 Case outline(s). The case outline(s) are

6、 as specified herein. Outline letter Number of pins JEDEC PUB 95 Package style X 8 MO-187-AA-T Plastic small outline with thermal pad 1.2.3 Lead finishes. The lead finishes are as specified below or other lead finishes as provided by the device manufacturer: Finish designator Material A Hot solder d

7、ip B Tin-lead plate C Gold plate D Palladium E Gold flash palladium Z Other Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DLA LAND AND MARITIME COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/13610 REV PAGE 3 1.3 Absolute maximum ratings. 1/

8、 Supply voltage range (VS) 16.5 V Input voltage (VIN) VSOutput current (IOUT) . 150 mA 2/ Differential input voltage (VID) 4 V Maximum junction temperature range (TJ) . +150C 3/ Storage temperature range (TSTG) -65C to +150C Lead temperature, 1.6 mm (1/16 inch) from case for 10 seconds +300C Electro

9、static discharge (ESD): Human body model (HBM) . 4,000 V Charge device model (CDM) 1,000 V Machine model (MM) . 100 V 1.4 Recommended operating conditions. 4/ Supply voltage (VS) : Dual supply 5 V nominal and 7.5 V maximum Single supply 5 V minimum and 15 V maximum Operating junction temperature ran

10、ge (TJ) -55C to +125C 1/ Stresses beyond those listed under “absolute maximum rating” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is no

11、t implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2/ This device may incorporate a thermal pad on the underside of the chip. This acts as a heat sink and must be connected to a thermally dissipative plane for proper power dissipation. Failur

12、e to do so, may result in exceeding the maximum junction temperature which could permanently damage the device. 3/ The absolute maximum temperature under any condition is limited by the constraints of the silicon process. 4/ Use of this product beyond the manufacturers design rules or stated paramet

13、ers is done at the users risk. The manufacturer and/or distributor maintain no responsibility or liability for product used beyond the stated limits. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DLA LAND AND MARITIME COLUMBUS, OHIO SIZE A CODE IDE

14、NT NO. 16236 DWG NO. V62/13610 REV PAGE 4 1.5 Thermal characteristics. Thermal metric Symbol Case X Unit Thermal resistance, junction-to-ambient 5/ JA63.1 C/W Thermal resistance, junction-to-case (top) 6/ JC(TOP)46.2 C/W Thermal resistance, junction-to-board 7/ JB33.9 C/W Characterization parameter,

15、 junction-to-top 8/ JT1.9 C/W Characterization parameter, junction-to-board 9/ JB33.6 C/W Thermal resistance, junction-to-case (bottom) 10/ JC(BOTTOM)11.9 C/W 5/ The thermal resistance, junction-to-ambient under natural convection is obtained in a simulation on a JEDEC standard, high-K board, as spe

16、cified in JESD51-7, in an environment described in JESD51-2a. 6/ The thermal resistance, junction-to-case (top) is obtained by simulating a cold plate test on the package top. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. 7/ The therma

17、l resistance, junction-to-board is obtained by simulating in an environment with a ring cold plate fixture to control the printed circuit board (PCB) temperature, as described in JESD51-8. 8/ Characterization parameter, junction-to-top (JT) estimates the junction temperature of a device in a real sy

18、stem and is extracted from the simulation data for obtaining JA, using a procedure described in JESD51-2a (sections 6 and 7). 9/ Characterization parameter, junction-to-board (JB) estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining

19、JA, using a procedure described in JESD51-2a (sections 6 and 7). 10/ The thermal resistance, junction-to-case (bottom) is obtained by simulating a cold plate test on the exposed thermal pad. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88

20、. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DLA LAND AND MARITIME COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/13610 REV PAGE 5 2. APPLICABLE DOCUMENTS AMERICAN NATIONAL STANDARDS INSTITUTE ANSI SEMI STANDARD G30-88 - Test Method for

21、Junction-to-Case Thermal Resistance Measurements for Ceramic Packages (Applications for copies should be addressed to the American National Standards Institute, Semiconductor Equipment and Materials International, 1819 L Street, NW, 6 th floor, Washington, DC 20036 or online at http:/www.ansi.org) J

22、EDEC Solid State Technology Association EIA/JESD 51-2a - Integrated Circuits Thermal Test Method Environment Conditions Natural Convection (Still Air) EIA/JESD 51-7 - High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages EIA/JESD 51-8 - Integrated Circuits Thermal Test Met

23、hod Environment Conditions Junction-to-Board JEDEC PUB 95 - Registered and Standard Outlines for Semiconductor Devices (Applications for copies should be addressed to the Electronic Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201-3834 or online at http:/www.jedec.org) 3. REQUIREMENTS

24、 3.1 Marking. Parts shall be permanently and legibly marked with the manufacturers part number as shown in 6.3 herein and as follows: A. Manufacturers name, CAGE code, or logo B. Pin 1 identifier C. ESDS identification (optional) 3.2 Unit container. The unit container shall be marked with the manufa

25、cturers part number and with items A and C (if applicable) above. 3.3 Electrical characteristics. The maximum and recommended operating conditions and electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.4 Design, construction, and physical dimension. The design

26、, construction, and physical dimensions are as specified herein. 3.5 Diagrams. 3.5.1 Case outline. The case outline shall be as shown in 1.2.2 and figure 1. 3.5.2 Terminal connections. The terminal connections shall be as shown in figure 2. Provided by IHSNot for ResaleNo reproduction or networking

27、permitted without license from IHS-,-,-DLA LAND AND MARITIME COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/13610 REV PAGE 6 TABLE I. Electrical performance characteristics. 1/ Test Symbol Conditions 2/ VS= 5 V unless otherwise specifiedTemperature, TJ Device type Limits Unit Min Max AC char

28、acteristics. Small signal bandwidth SSBW G = +1, PIN= -20 dBm, RF= 392 +25C 01 370 typical MHz G = +2, PIN= -30 dBm, RF= 1 k 175 typical G = +5, PIN= -30 dBm, RF= 2.4 k 70 typical G = +10, PIN= -30 dBm, RF= 5.1 k 30 typical Gain bandwidth product GBWP G +10 +25C 01 300 typical MHz Bandwidth for 0.1

29、dB flatness BW PIN = -20 dBm +25C 01 150 typical MHz Large signal bandwidth LSBW VP= 2 V +25C 01 220 typical MHz Slew rate SR 4 VPPstep +25C 01 2800 typical V/s Rise time tr2 VPPstep +25C 01 0.4 typical ns Fall time tf2 VPPstep +25C 01 0.5 typical ns Settling time tsTo 0.01%, VO= 4 VPP+25C 01 8.3 ty

30、pical ns To 0.1%, VO= 4 VPP6.3 typical Harmonic distortion G = +1, VO= 2 VPP+25C Second harmonic f = 8 MHz +25C 01 -82 typical dBc f = 30 MHz -71 typical Third harmonic f = 8 MHz +25C 01 -97 typical dBc f = 30 MHz -74 typical Third order intermodulation distortion VO= 2 VPP, fC= 30 MHz, RF= 392 , 20

31、0 kHz tone spacing +25C 01 -90 typical dBc Third order output intercept point fC= 30 MHz, RF= 392 , referenced to 50 +25C 01 49 typical dBm See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DLA LAND AND MARITIME COLUMBUS,

32、 OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/13610 REV PAGE 7 TABLE I. Electrical performance characteristics Continued. 1/ Test Symbol Conditions 2/ VS= 5 V unless otherwise specifiedTemperature, TJ Device type Limits Unit Min Max AC characteristics continued. Input voltage noise f 1 MHz +25C 01 7

33、 typical nV / Hz Input current noise f 100 kHz +25C 01 1.7 typical pA / Hz Overdrive recovery time Overdrive = 5.5 V +25C 01 60 typical ns DC performance characteristics. Open loop voltage gain AVOL-55C to +125C 01 49 dB Input offset voltage VIO-55C to +125C 01 -11 6 mV Average offset voltage drift

34、VIO-55C to +125C 01 10 typical V/ C Input bias current IIB-55C to +125C 01 6.6 A Average bias current drift IIB-55C to +125C 01 10 typical nA/ C Input offset current IIO-55C to +125C 01 2 A Average offset current drift IIO-55C to +125C 01 40 typical nA/ C Input characteristics Common mode input rang

35、e VCMIR-55C to +125C 01 -5.1 2 V Common mode rejection ratio CMRR -55C to +125C 01 70 dB Input impedance ZIN3/ +25C 01 107|1 typical |pF See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DLA LAND AND MARITIME COLUMBUS, OH

36、IO SIZE A CODE IDENT NO. 16236 DWG NO. V62/13610 REV PAGE 8 TABLE I. Electrical performance characteristics Continued. 1/ Test Symbol Conditions 2/ VS= 5 V unless otherwise specifiedTemperature, TJ Device type Limits Unit Min Max Output characteristics. Differential output voltage swing VODRL= 1 k -

37、55C to +125C 01 7.25 V Differential output current drive IODRL= 20 -55C to +125C 01 90 mA Output balance error PIN= -20 dBm, f = 100 kHz +25C 01 -58 typical dB Closed loop output impedance (single ended) f = 1 MHz +25C 01 0.1 typical Output common mode voltage control characteristics. Small signal b

38、andwidth SSBW RL= 400 +25C 01 180 typical MHz Slew rate SR 2 VPPstep +25C 01 92 typical V/s Minimum gain -55C to +125C 01 0.98 V/V Maximum gain -55C to +125C 01 1.08 V/V Common mode offset voltage VOCM-55C to +125C 01 -7.6 15 mV Input bias current IIBVOCM= 2.5 V -55C to +125C 01 170 A Input voltage

39、range VINR-55C to +125C 01 3.4 V Input impedance ZIN3/ +25C 01 25|1 typical k|pF Maximum default voltage VOCMleft floating -55C to +125C 01 0.10 V Minimum default voltage VOCMleft floating -55C to +125C 01 -0.10 V Power supply characteristics. Specified operating voltage -55C to +125C 01 7.5 V Maxim

40、um quiescent current -55C to +125C 01 40 mA Minimum quiescent current -55C to +125C 01 11 mA Power supply rejection PSRR -55C to +125C 01 70 dB See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DLA LAND AND MARITIME COLUM

41、BUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/13610 REV PAGE 9 TABLE I. Electrical performance characteristics Continued. 1/ Test Symbol Conditions 2/ VS= 5 V unless otherwise specifiedTemperature, TJ Device type Limits Unit Min Max Power down characteristics. Enable voltage threshold Device ena

42、bled ON above 2.9 V -55C to +125C 01 -2.9 V Disable voltage threshold Device disabled OFF below 4.3 V -55C to +125C 01 -4.3 V Power down quiescent current -55C to +125C 01 1400 A Input bias current IIB-55C to +125C 01 260 A Input impedance ZIN3/ +25C 01 50|1 typical k|pF Turn on time delay ton+25C 0

43、1 1000 typical ns Turn off time delay toff+25C 01 800 typical ns See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DLA LAND AND MARITIME COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/13610 REV PAGE 10 TABLE I. El

44、ectrical performance characteristics. 1/ Test Symbol Conditions 2/ VS= 5 V unless otherwise specifiedTemperature, TJ Device type Limits Unit Min Max AC characteristics. Small signal bandwidth SSBW G = +1, PIN= -20 dBm, RF= 392 +25C 01 320 typical MHz G = +2, PIN= -30 dBm, RF= 1 k 160 typical G = +5,

45、 PIN= -30 dBm, RF= 2.4 k 60 typical G = +10, PIN= -30 dBm, RF= 5.1 k 30 typical Gain bandwidth product GBWP G +10 +25C 01 300 typical MHz Bandwidth for 0.1 dB flatness BW PIN = -20 dBm +25C 01 180 typical MHz Large signal bandwidth LSBW VP= 1 V +25C 01 200 typical MHz Slew rate SR 2 VPPstep +25C 01

46、1300 typical V/s Rise time tr2 VPPstep +25C 01 0.5 typical ns Fall time tf2 VPPstep +25C 01 0.6 typical ns Settling time tsTo 0.01%, VO= 2 VPP+25C 01 13.1 typical ns To 0.1%, VO= 2 VPP8.3 typical Harmonic distortion G = +1, VO= 2 VPPSecond harmonic f = 8 MHz +25C 01 -80 typical dBc f = 30 MHz -55 ty

47、pical Third harmonic f = 8 MHz +25C 01 -76 typical dBc f = 30 MHz -60 typical See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DLA LAND AND MARITIME COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/13610 REV PAGE 11 TABLE I. Electrical performance characteristics Continued. 1/ Test Symbol Conditions 2/ VS= 5 V unless otherwise specifiedTemperature, TJ Device type Limits Unit Min Max

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1