ImageVerifierCode 换一换
格式:PDF , 页数:14 ,大小:99.49KB ,
资源ID:698177      下载积分:10000 积分
快捷下载
登录下载
邮箱/手机:
温馨提示:
如需开发票,请勿充值!快捷下载时,用户名和密码都是您填写的邮箱或者手机号,方便查询和重复下载(系统自动生成)。
如填写123,账号就是123,密码也是123。
特别说明:
请自助下载,系统不会自动发送文件的哦; 如果您已付费,想二次下载,请登录后访问:我的下载记录
支付方式: 支付宝扫码支付 微信扫码支付   
注意:如需开发票,请勿充值!
验证码:   换一换

加入VIP,免费下载
 

温馨提示:由于个人手机设置不同,如果发现不能下载,请复制以下地址【http://www.mydoc123.com/d-698177.html】到电脑端继续下载(重复下载不扣费)。

已注册用户请登录:
账号:
密码:
验证码:   换一换
  忘记密码?
三方登录: 微信登录  

下载须知

1: 本站所有资源如无特殊说明,都需要本地电脑安装OFFICE2007和PDF阅读器。
2: 试题试卷类文档,如果标题没有明确说明有答案则都视为没有答案,请知晓。
3: 文件的所有权益归上传用户所有。
4. 未经权益所有人同意不得将文件中的内容挪作商业或盈利用途。
5. 本站仅提供交流平台,并不能对任何下载内容负责。
6. 下载文件中如有侵权或不适当内容,请与我们联系,我们立即纠正。
7. 本站不保证下载资源的准确性、安全性和完整性, 同时也不承担用户因使用这些下载资源对自己和他人造成任何形式的伤害或损失。

版权提示 | 免责声明

本文(DLA SMD-5962-00513 REV C-2009 MICROCIRCUIT DIGITAL ADVANCED CMOS DUAL 4-INPUT NAND GATE TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf)为本站会员(eastlab115)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-00513 REV C-2009 MICROCIRCUIT DIGITAL ADVANCED CMOS DUAL 4-INPUT NAND GATE TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Correct propagation delay minimum limit in table I. jak 00-08-22 Monica L. Poelking B Make change to footnote 9/ in table I. Add vendor CAGE F8859. Add case outline X. Add device type 02. Add table III, delta limits. Change PRR in note 3 on figur

2、e 4. Update drawing to MIL-PRF-38535 requirements. Editorial changes throughout. jak 03-04-09 Thomas M. Hess C Update boilerplate paragraphs to the current MIL-PRF-38535 requirements. - LTG 09-10-23 Thomas M. Hess REV SHET REV SHET REV STATUS REV C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6

3、 7 8 9 10 11 12 13 PMIC N/A PREPARED BY Joseph A. Kerby DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY Charles F. Saffle, Jr. APPRO

4、VED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL 4-INPUT NAND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON DRAWING APPROVAL DATE 00-03-15 AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-00513 SHEET 1 OF 13 DSCC FORM 2233 APR 97 5962-E036-10 Provided by IHSNot for ResaleN

5、o reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00513 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels co

6、nsisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the

7、 PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 00513 01 Q C A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device class

8、es Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA d

9、evice. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACT20 Dual 4-input NAND gate, TTL compatible inputs 02 54ACT20 Dual 4-input NAND gate, TTL compatible inputs 1.2.3 Device class designator. The device class desi

10、gnator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certificatio

11、n and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line X CDFP3-F14 14 Flat pack 1.2.5 Lead finish. The lead finish is as s

12、pecified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00513 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-

13、3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +6.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+ 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc DC input clamp current (IIK) (VINVCC+ 0.5 V

14、) 20 mA DC output clamp current (IOK) (VOUTVCC + 0.5 V) . 50 mA DC output source or sink current per output pin (IOUT) . 50 mA DC VCCor ground current (ICCor IGND) . 100 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to

15、-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +150C Maximum power dissipation (PD) . 500 mW 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT) . +0.0 V dc to VCCMinimum high lev

16、el input voltage (VIH) . +2.0 V Maximum low level input voltage (VIL) +0.8 V Maximum high level output current (IOH) -24.0 mA Maximum low level output current (IOL) +24.0 mA Maximum input rise or fall rate (t/V) . 10 ns/V Case operating temperature range (TC) -55C to +125C 1/ Stresses above the abso

17、lute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the fully specified

18、 VCCrange and case temperature range of -55C to +125C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00513 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 AP

19、R 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or cont

20、ract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDB

21、OOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 1911

22、1-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents cited in the solicitation or contract. ELECTRONIC INDUSTRIES ALLIANCE (EIA) JEDEC Standard No. 20 - Standard for

23、Description of 54/74ACXXXXX and 54/74ACTXXXXX Advanced High-Speed CMOS Devices. (Copies of these documents are available online at http:/www.jedec.org or from Electronic Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201-3834). 2.3 Order of precedence. In the event of a conflict between

24、 the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements f

25、or device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for d

26、evice class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q a

27、nd V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure

28、 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STAN

29、DARD MICROCIRCUIT DRAWING SIZE A 5962-00513 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance character

30、istics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined

31、in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on

32、the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certificat

33、ion mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QM

34、L-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of co

35、mpliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.

36、 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For devi

37、ce class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the opti

38、on to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group nu

39、mber 36 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00513 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I.

40、Electrical performance characteristics. Test and MIL-STD-883 test method 1/ Symbol Test conditions 2/ -55C TC +125C +4.5 V VCC +5.5 V unless otherwise specified Device type and device class 3/ VCCGroup A subgroups Limits 4/ Unit Min Max Positive input clamp voltage 3022 VIC+For input under test IIN=

41、 1.0 mA All V 0.0 V 1 0.4 1.5 V Negative input clamp voltage 3022 VIC-For input under test IIN= -1.0 mA All V Open 1 -0.4 -1.5 V High level output voltage 3006 VOH VIN= VIHor VILVIH= 2.0 V and VIL= 0.8 V IOH= -50 A All All 4.5 V 1, 2, 3 4.4 V 02 All 5.5V 5.4 VIN= VIHor VILVIH= 2.0 V and VIL= 0.8 V I

42、OH= -24 mA All All 4.5 V 1 3.94 2, 3 3.7 02 All 5.5 V 1 4.86 2, 3 4.7 VIN= VIHor VILVIH= 2.0 V and VIL= 0.8 V IOH= -50 mA 5/ All All 5.5 V 2, 3 3.85 Low level output voltage 3007 VOL VIN= VIHor VILVIH= 2.0 V and VIL= 0.8 V IOL= +50 A All All 4.5 V 1, 2, 3 0.1 V 02 All 5.5 V 1, 2, 3 0.1 VIN= VIHor VI

43、LVIH= 2.0 V and VIL= 0.8 V IOL= +24 mA All All 4.5 V 1 0.36 2, 3 0.5 02 All 5.5 V 1 0.36 2, 3 0.5 VIN= VIHor VILVIH= 2.0 V and VIL= 0.8 V IOL= +50 mA 5/ All All 5.5 V 2, 3 1.65 Input leakage current high 3010 IIHFor input under test VIN= 5.5 V For all other inputs VIN= VCCor GND All All 5.5 V 1 +0.1

44、 A 2, 3 +1.0 Input leakage current low 3009 IILFor input under test VIN= 0.0 V For all other inputs VIN= VCCor GND All All 5.5 V 1 -0.1 A 2, 3 -1.0 Quiescent supply current delta, TTL input levels 3005 ICC6/ For input under test VIN= VCC- 2.1 V For all other inputs VIN= VCCor GND 01 All 4.5 V and 5.

45、5 V 1 648.0 A 2, 3 810.0 02 All 5.5 V 1, 2, 3 1.6 mA Quiescent supply current 3005 ICCFor all inputs VIN= VCCor GND IOUT= 0.0 V All All 5.5 V 1 4.0 A 2, 3 80.0 Input capacitance 3012 CINSee 4.4.1c TC= +25C All All GND 4 10.0 pF See footnotes at end of table. Provided by IHSNot for ResaleNo reproduct

46、ion or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00513 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test and MIL-STD-883 test method

47、 1/ Symbol Test conditions 2/ -55C TC +125C +4.5 V VCC +5.5 V unless otherwise specified Device type and device class 3/ VCCGroup A subgroups Limits 4/ Unit Min Max Power dissipation capacitance CPD7/ See 4.4.1c TC= +25C, f = 1 MHz All All 5.0 V 4 48.0 pF Functional tests 3014 8/ See 4.4.1b VIN= VIH

48、or VILVIH= 2.0 V and VIL= 0.8 V Verify output VOUTAll All 4.5 V 7, 8 L H 5.5 V 7, 8 L H Propagation delay time, mA, mB, mC, or mD to mY 3003 tPHL, tPLH9/ CL= 50 pF RL= 500 See figure 4 All All 4.5 V 9, 10, 11 1.0 13.5 ns 1/ For tests not listed in the referenced MIL-STD-883 (e.g. ICC), utilize the general test procedure of 883 under the conditions listed herein. 2/ Each input/output, as applicable, shall be tested at the specified temperature, for the specified limits, to the tests in table I herein. Output terminals not designated shall be high-level logic, low-level log

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1