DLA SMD-5962-04227 REV C-2009 MICROCIRCUIT MEMORY DIGITAL CMOS 512K x 32-BIT (16 M) RADIATION-HARDENED DUAL VOLTAGE SRAM MULTICHIP MODULE.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Corrected the parameter unit for Supply current standby 0 MHz and 58.8 MHz the symbol is IDD2(SB) on Table I from 5 mA to 5 uA. ksr 05-05-12 Raymond Monnin B Changed Table I parameters for Supply current operating 1 MHz from 40 mA to 70 mA, Suppl

2、y current operating 58.8 MHz from 100 mA to 122 mA. Changed Supply current standby 0 MHz and 58.8 MHz the symbol is IDD1(SB) on Table I from 35 mA to 65 mA. Changed Supply current standby 0 MHz and 58.8 MHz the symbol is IDD2(SB) on Table I from 5 A to 8 A. Changed Data retention current for subgrou

3、p 2 from 30 mA to 55 mA, and for subgroups 1 and 3; from 500 A to 700 A. ksr 05-11-29 Raymond Monnin C Section 1.3, changed supply voltage range high end (VDD1) to 2.1V, changed TAto TC. Section 1.4 changed TAto TC, added new footnote 4/. Renumbered footnotes in section 1.5. Made significant change

4、to max value in Table I for Operating supply current IDD1and Supply current standby IDD1. New footnote 2/ added, other footnotes renumbered. Made changes to Figure 1 case outline X for dimensions b through c1, D1, and E1. ksr 09-09-15 Charles F. Saffle REV SHEET REV C C C C C C C C SHEET 15 16 17 18

5、 19 20 21 22 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Kenneth Rice DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING CHECKED BY Rajesh Pithadia THIS DRAWING IS AVAILABL

6、E FOR USE BY All DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE APPROVED BY Raymond Monnin MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 32-BIT (16 M), RADIATION-HARDENED, DUAL VOLTAGE SRAM, MULTICHIP MODULEDRAWING APPROVAL DATE 05-03-31 AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-042

7、27 SHEET 1 OF 22 DSCC FORM 2233 APR 97 5962-E225-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-04227 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 9

8、7 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When av

9、ailable, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN shall be as shown in the following example: 5962 F 04227 01 Q X A Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designat

10、or (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535 appendix A specifie

11、d RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device types. The device types shall identify the circuit function as follows: Device type Generic number 1/ Circuit function Access time 01 8CR512K32 512K X 32-bit rad-hard SRAM (Mil T

12、emp) 17 ns 02 8CR512K32 512K X 32-bit rad-hard SRAM (Extended Temp) 17 ns 1.2.3 Device class designator. The device class designator shall be a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirem

13、ents for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q, V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) shall be as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designat

14、or Terminals Package style X See figure 1 68 Flat pack 1.2.5 Lead finish. The lead finish shall be as specified in MIL-PRF-38535 for classes Q and V or MIL-PRF-38535, appendix A for device class M. 1/ Generic numbers are also listed on the Standard Microcircuit Drawing Source Approval Bulletin at th

15、e end of this document and will also be listed in QML-38535 and MIL-HDBK-103. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-04227 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SH

16、EET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 2/ 3/ Supply voltage range, (VDD1) -0.3 V dc to +2.1 V dc Supply voltage range, (VDD2) -0.3 V dc to +3.8 V dc Voltage range on any pin . -0.3 V dc to +3.8 V dc Input current, dc . + 5 mA Power dissipation . 1.2 W Case temperature range, (TC)

17、Device 01 -55C to +125C Device 02 . -40C to +125C Storage temperature range, (TSTG) -65C to +150C Junction temperature, (TJ) . +150C Thermal resistance, junction-to-case, (JC): Case X . +5C/W 1.4 Recommended operating conditions. Supply voltage range, (VDD1) +1.7 V dc to +1.9 V dc 4/ Supply voltage

18、range, (VDD2) +3.0 V dc to +3.6 V dc Supply voltage, (VSS) . 0 V dc Input voltage, dc 0 V dc to VDD2Case temperature range, (TC) Device 01 -55C to +125C Device 02 . -40C to +125C 1.5 Radiation features Maximum total dose available (dose rate = 1 rads(Si)/s) 30.0 x 104rads(Si) Dose rate upset . 1.0e9

19、 rad(Si)/s Dose rate survivability . 1.2e12 rad(Si)/s Single event phenomenon (SEP) effective linear energy threshold (LET) with no upsets 9 Mev cm2/mg with no latch-up . 100 MeV-cm2/mg 5/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, st

20、andards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification

21、for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies o

22、f these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operatio

23、n at the maximum levels may degrade performance and affect reliability. 3/ All voltage values in this drawing are with respect to VSS. 4/ For increase noise immunity, supply voltage (VDD1) can be increased to 2.0 V. The parameters in Table I, (Electrical performance characteristics) are guaranteed t

24、hrough characterization at VDD1= 2.0 V dc. 5/ Contact the device manufacturer for detailed lot information. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-04227 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO

25、43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation. AMERICA

26、N SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Ba

27、rr Harbor Drive, West Conshohocken, PA 19428-2959; http:/www.astm.org.) ELECTRONICS INDUSTRIES ASSOCIATION (EIA) JEDEC Standard EIA/JESD78 - IC Latch-Up Test. (Applications for copies should be addressed to the Electronics Industries Association, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www

28、.jedec.org.) (Non-Government standards and other publications are normally available from the organizations that prepare or distribute the documents. These documents also may be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict be

29、tween the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requireme

30、nts for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements

31、for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classe

32、s Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table(s). The truth table(s) sha

33、ll be as specified on figure 3. 3.2.4 Output load circuit. The output load circuit shall be as specified on figure 4. 3.2.5 Timing waveforms. The timing waveforms shall be as specified on figure 5. 3.2.6 Radiation test circuit. The radiation test circuit shall be as specified on figure 6. 3.2.7 Func

34、tional tests. Various functional tests used to test this device are contained in the appendix (herein). If the test patterns cannot be implemented due to test equipment limitations, alternate test patterns to accomplish the same results shall be allowed. For device class M, alternate test patterns s

35、hall be maintained under document revision level control by the manufacturer and shall be made available to the preparing or acquiring activity upon request. For device classes Q and V, alternate test patterns shall be under the control of the device manufacturers Technology Review Board (TRB) in ac

36、cordance with MIL-PRF-38535 and shall be made available to the preparing or acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter li

37、mits are as specified in table I and shall apply over the full case operating temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-04227 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990

38、REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In

39、addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked.

40、 Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535

41、. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see

42、6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this

43、drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device cla

44、sses Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devi

45、ces acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore

46、documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 41 (see MIL-PRF-38535, appendix A). 4. VERIFICATION 4.1 Sampling and inspection. Fo

47、r device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, samplin

48、g and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Delete the seq