DLA SMD-5962-04227 REV C-2009 MICROCIRCUIT MEMORY DIGITAL CMOS 512K x 32-BIT (16 M) RADIATION-HARDENED DUAL VOLTAGE SRAM MULTICHIP MODULE.pdf
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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Corrected the parameter unit for Supply current standby 0 MHz and 58.8 MHz the symbol is IDD2(SB) on Table I from 5 mA to 5 uA. ksr 05-05-12 Raymond Monnin B Changed Table I parameters for Supply current operating 1 MHz from 40 mA to 70 mA, Suppl
2、y current operating 58.8 MHz from 100 mA to 122 mA. Changed Supply current standby 0 MHz and 58.8 MHz the symbol is IDD1(SB) on Table I from 35 mA to 65 mA. Changed Supply current standby 0 MHz and 58.8 MHz the symbol is IDD2(SB) on Table I from 5 A to 8 A. Changed Data retention current for subgrou
3、p 2 from 30 mA to 55 mA, and for subgroups 1 and 3; from 500 A to 700 A. ksr 05-11-29 Raymond Monnin C Section 1.3, changed supply voltage range high end (VDD1) to 2.1V, changed TAto TC. Section 1.4 changed TAto TC, added new footnote 4/. Renumbered footnotes in section 1.5. Made significant change
4、to max value in Table I for Operating supply current IDD1and Supply current standby IDD1. New footnote 2/ added, other footnotes renumbered. Made changes to Figure 1 case outline X for dimensions b through c1, D1, and E1. ksr 09-09-15 Charles F. Saffle REV SHEET REV C C C C C C C C SHEET 15 16 17 18
5、 19 20 21 22 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Kenneth Rice DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING CHECKED BY Rajesh Pithadia THIS DRAWING IS AVAILABL
6、E FOR USE BY All DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE APPROVED BY Raymond Monnin MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 32-BIT (16 M), RADIATION-HARDENED, DUAL VOLTAGE SRAM, MULTICHIP MODULEDRAWING APPROVAL DATE 05-03-31 AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-042
7、27 SHEET 1 OF 22 DSCC FORM 2233 APR 97 5962-E225-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-04227 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 9
8、7 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When av
9、ailable, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN shall be as shown in the following example: 5962 F 04227 01 Q X A Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designat
10、or (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535 appendix A specifie
11、d RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device types. The device types shall identify the circuit function as follows: Device type Generic number 1/ Circuit function Access time 01 8CR512K32 512K X 32-bit rad-hard SRAM (Mil T
12、emp) 17 ns 02 8CR512K32 512K X 32-bit rad-hard SRAM (Extended Temp) 17 ns 1.2.3 Device class designator. The device class designator shall be a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirem
13、ents for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q, V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) shall be as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designat
14、or Terminals Package style X See figure 1 68 Flat pack 1.2.5 Lead finish. The lead finish shall be as specified in MIL-PRF-38535 for classes Q and V or MIL-PRF-38535, appendix A for device class M. 1/ Generic numbers are also listed on the Standard Microcircuit Drawing Source Approval Bulletin at th
15、e end of this document and will also be listed in QML-38535 and MIL-HDBK-103. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-04227 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SH
16、EET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 2/ 3/ Supply voltage range, (VDD1) -0.3 V dc to +2.1 V dc Supply voltage range, (VDD2) -0.3 V dc to +3.8 V dc Voltage range on any pin . -0.3 V dc to +3.8 V dc Input current, dc . + 5 mA Power dissipation . 1.2 W Case temperature range, (TC)
17、Device 01 -55C to +125C Device 02 . -40C to +125C Storage temperature range, (TSTG) -65C to +150C Junction temperature, (TJ) . +150C Thermal resistance, junction-to-case, (JC): Case X . +5C/W 1.4 Recommended operating conditions. Supply voltage range, (VDD1) +1.7 V dc to +1.9 V dc 4/ Supply voltage
18、range, (VDD2) +3.0 V dc to +3.6 V dc Supply voltage, (VSS) . 0 V dc Input voltage, dc 0 V dc to VDD2Case temperature range, (TC) Device 01 -55C to +125C Device 02 . -40C to +125C 1.5 Radiation features Maximum total dose available (dose rate = 1 rads(Si)/s) 30.0 x 104rads(Si) Dose rate upset . 1.0e9
19、 rad(Si)/s Dose rate survivability . 1.2e12 rad(Si)/s Single event phenomenon (SEP) effective linear energy threshold (LET) with no upsets 9 Mev cm2/mg with no latch-up . 100 MeV-cm2/mg 5/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, st
20、andards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification
21、for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies o
22、f these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operatio
23、n at the maximum levels may degrade performance and affect reliability. 3/ All voltage values in this drawing are with respect to VSS. 4/ For increase noise immunity, supply voltage (VDD1) can be increased to 2.0 V. The parameters in Table I, (Electrical performance characteristics) are guaranteed t
24、hrough characterization at VDD1= 2.0 V dc. 5/ Contact the device manufacturer for detailed lot information. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-04227 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO
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