ImageVerifierCode 换一换
格式:PDF , 页数:24 ,大小:146.96KB ,
资源ID:701163      下载积分:10000 积分
快捷下载
登录下载
邮箱/手机:
温馨提示:
如需开发票,请勿充值!快捷下载时,用户名和密码都是您填写的邮箱或者手机号,方便查询和重复下载(系统自动生成)。
如填写123,账号就是123,密码也是123。
特别说明:
请自助下载,系统不会自动发送文件的哦; 如果您已付费,想二次下载,请登录后访问:我的下载记录
支付方式: 支付宝扫码支付 微信扫码支付   
注意:如需开发票,请勿充值!
验证码:   换一换

加入VIP,免费下载
 

温馨提示:由于个人手机设置不同,如果发现不能下载,请复制以下地址【http://www.mydoc123.com/d-701163.html】到电脑端继续下载(重复下载不扣费)。

已注册用户请登录:
账号:
密码:
验证码:   换一换
  忘记密码?
三方登录: 微信登录  

下载须知

1: 本站所有资源如无特殊说明,都需要本地电脑安装OFFICE2007和PDF阅读器。
2: 试题试卷类文档,如果标题没有明确说明有答案则都视为没有答案,请知晓。
3: 文件的所有权益归上传用户所有。
4. 未经权益所有人同意不得将文件中的内容挪作商业或盈利用途。
5. 本站仅提供交流平台,并不能对任何下载内容负责。
6. 下载文件中如有侵权或不适当内容,请与我们联系,我们立即纠正。
7. 本站不保证下载资源的准确性、安全性和完整性, 同时也不承担用户因使用这些下载资源对自己和他人造成任何形式的伤害或损失。

版权提示 | 免责声明

本文(DLA SMD-5962-96896-1997 MICROCIRCUIT DIGITAL BICMOS HIGH-SPEED OPTICAL COPPER RECEIVER INTERFACE MONOLITHIC SILICON《双互补金属氧化物半导体 光学的铜接收器接口硅单片电路数字微电路》.pdf)为本站会员(sofeeling205)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-96896-1997 MICROCIRCUIT DIGITAL BICMOS HIGH-SPEED OPTICAL COPPER RECEIVER INTERFACE MONOLITHIC SILICON《双互补金属氧化物半导体 光学的铜接收器接口硅单片电路数字微电路》.pdf

1、REVISIONSLTR DESCRIPTION DATE (YR-MO-DA) APPROVEDREV SHEETREVSHEET 15 16 17 18 19 20 21 22 23REV STATUSOF SHEETSREVSHEET 123456789101121314PMIC N/APREPARED BY Larry T. Gauder DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216 STANDARDMICROCIRCUITDRAWINGTHIS DRAWING IS AVAILABLEFOR USE BY ALLDEPARTM

2、ENTSAND AGENCIES OF THEDEPARTMENT OF DEFENSEAMSC N/A CHECKED BYThomas M. HessMICROCIRCUIT, DIGITAL, BICMOS, HIGH-SPEEDOPTICAL/COPPER RECEIVER INTERFACE, MONOLITHIC SILICONAPPROVED BYMonica L. PoelkingDRAWING APPROVAL DATE97-05-06SIZEACAGE CODE672685962-96896REVISION LEVELSHEET 1 OF 23DSCC FORM 2233A

3、PR 97 5962-E027-97DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000SIZEA5962-96896REVIS

4、ION LEVEL SHEET2DSCC FORM 2234APR 971. SCOPE1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part orId

5、entifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.1.2 PIN. The PIN is as shown in the following example:5962 - 96896 01 Q 3 X G0DG0D G0D G0D G0D G0DG0DG0D G0D G0D G0D G0DG0D G0D G0D G0D G0D G0D Federal RHA Device Device Case Lead s

6、tock class designator type class outline finishdesignator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3)/ Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and aremarked with the appropriate RHA design

7、ator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix Aspecified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:Device type Generic number Circui

8、t function01 7B933 High-speed optical/copper receiver interface1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level asfollows:Device class Device requirements documentationM Vendor self-certification to the requirements for MIL-STD-883

9、 compliant,non-JAN class level B microcircuits in accordance with MIL-PRF-38535,appendix AQ or V Certification and qualification to MIL-PRF-385351.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:Outline letter Descriptive designator Terminals Package style3

10、CQCC2-N28 28 Square leadless chip carrier1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRC

11、UIT DRAWINGDEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000SIZEA5962-96896REVISION LEVEL SHEET3DSCC FORM 2234APR 971.3 Absolute maximum ratings. 1/Supply voltage range (V )CCto ground potential continuous - - - - - - - - - - - - - - - - - - - - - -0.5 V to +7.0 V DC voltage range applied to o

12、utput - - - - - - - - - - - - - - - - - - - - -0.5 V to V maximumCCDC input voltage range - - - - - - - - - - - - - - - - - - - - - - - - - - - -0.5 V to +7.0 VDC output current (TTL LOW) - - - - - - - - - - - - - - - - - - - - - - 30 mADC output current (PECL HIGH) - - - - - - - - - - - - - - - - -

13、 - - - - -50 mADC input current - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -30 to +0.5 mAStorage temperature range - - - - - - - - - - - - - - - - - - - - - - - - -65(C to +150(CMaximum power dissipation (P ) 2/ - - - - - - - - - - - - - - - - - - - 2.6 WDLead temperature (sol

14、dering, 10 seconds) - - - - - - - - - - - - - - 260(CThermal resistance Junction to case (V ) - - - - - - - - - - - - - - See MIL-STD-1835JCJunction temperature (T ) - - - - - - - - - - - - - - - - - - - - - - - - - - 155(CJ1.4 Recommended operating conditions.Supply voltage range (V ) - - - - - - -

15、 - - - - - - - - - - - - - - - - - - +4.5 V dc to +5.5 V dc CCMinimum high-level input voltage (V ) - - - - - - - - - - - - - - - - - 2.0 VIHMaximum low-level input voltage (V ) - - - - - - - - - - - - - - - - - 0.8 VILCase operating temperature range (T ) - - - - - - - - - - - - - - - - -55(C to +1

16、25(CC1.5 Digital logic testing for device classes Q and V. Fault coverage measurement of manufacturinglogic tests (MIL-STD-883, test method 5012) - - - - - - - - - - - - - XX percent 3/2. APPLICABLE DOCUMENTS2.1 Government specification, standards, and handbooks. The following specification, standar

17、ds, and handbooks form a partof this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in theissue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in thesolicitation.SPECIFICATI

18、ONMILITARYMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.STANDARDSMILITARYMIL-STD-883 - Test Methods and Procedures for Microelectronics.MIL-STD-973 - Configuration Management.MIL-STD-1835 - Microcircuit Case Outlines.1/ Stresses above the absolute maximum rating may c

19、ause permanent damage to the device. Extended operation at themaximum levels may degrade performance and affect reliability.2/ Must withstand the added P due to short circuit test; e.g., I .DSC3/ Values will be added when they become available.Provided by IHSNot for ResaleNo reproduction or networki

20、ng permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000SIZEA5962-96896REVISION LEVEL SHEET4DSCC FORM 2234APR 97HANDBOOKSMILITARYMIL-HDBK-103 - List of Standard Microcircuit Drawings (SMDs).MIL-HDBK-780 - Standard Microcircuit Draw

21、ings.(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk,700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)2.2 Order of precedence. In the event of a conflict between the text of this drawing and th

22、e references cited herein, the text of this drawing takesprecedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.3. REQUIREMENTS3.1 Item requirements. The individual item requirements for device classes Q and V shall be

23、in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QMplan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance

24、 with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein.3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535and herein for device classes Q and V or MIL-PRF-38535, appendix A and

25、herein for device class M.3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein .3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.3.2.3 Truth table(s). The truth table(s) shall be as specified on figure 2.3.2.4 Functional block/logi

26、c diagrams. The functional block/logic diagrams shall be as specified on figure 3.3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as specified when available.3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein,

27、the electrical performancecharacteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range.3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical te

28、sts for eachsubgroup are defined in table I.3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the

29、manufacturer has the option ofnot marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Qand V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendi

30、x A.3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A.3.6 Certificate of compliance. For device classes Q and V, a

31、 certificate of compliance shall be required from a QML-38535 listed manufacturer inorder to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from amanufacturer in order to be listed as an approved source of supply in MI

32、L-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted toDSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Qand V, the requirements of MIL-PRF-38535 and herein or for device class M, the req

33、uirements of MIL-PRF-38535, appendix A and herein.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.Provide

34、d by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000SIZEA5962-96896REVISION LEVEL SHEET5DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics.Test Symbol Conditions

35、-55C T +125CC4.5 V V 5.5 V 1/CCunless otherwise specifiedGroup AsubgroupsDevicetypeLimits UnitMin MaxBus interface signals: Q , SC/G09D, RVS, G09RG09DG09Y, CKR, SO, RF, REFCLK, MODE, G09BG09IG09SG09TG09EG09N0-7Output high voltage VOHTV = 4.5 V, I = -2 mACC OHV = 0.0 V or 3.0 VIN1, 2, 3 All 2.4 VOutp

36、ut low voltage VOLTV = 4.5 V, I = 4 mACC OHV = 0.0 V or 3.0 VIN1, 2, 3 All 0.45 VOutput short circuit current IOSTV = 0 V 2/OUT1, 2, 3 All -15 -90 mAInput high voltage VIHT1, 2, 3 All 20 VCCVInput low voltage VILT1, 2, 3 All -0.5 0.8 VInput high current IIHTV = VIN CC1, 2, 3 All -10 +10 )AInput low

37、current IILTV = 0.0 VIN1, 2, 3 All -500 )APECL interface signals: INB+, SI, A/BInput high voltage VIHE1, 2, 3 All VCC-1.14VCCVInput low voltageVILE1, 2, 3 All 2.0 VCC-1.5VInput high current 3/IIHEV = V maxIN IHE1, 2, 3 All +500 )AInput low current 3/IILEV = V minIN ILE1, 2, 3 All +0.5 )ADifferential

38、 serial data inputs: INA+, INA-, INB+, INB-Differential input voltage VDIFF1, 2, 3 All 0.05 VHighest input voltage VIHH1, 2, 3 All VCCVLowest input voltage VILL1, 2, 3 All 2.0 VInput high current IIHHV = V maxIN IHH1, 2, 3 All 750 )AInput low current 4/ILLV = V minIN ILE1, 2, 3 All -200 )AMiscellane

39、ous: V , VCCN CCQPower supply current 5/ICCRFrequency = max 1, 2, 3 All 135 160 mAInput capacitance CINf = 1 MHz, V = 5.0 VoCCSee 4.4.1b 4 All 10 pFFunctional test See 4.4.1c 7, 8 AllSee footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license fr

40、om IHS-,-,-STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000SIZEA5962-96896REVISION LEVEL SHEET6DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics - Continued.Test Symbol Conditions-55C T +125CC4.5 V V 5.5 V 1/CCunless otherwise specifiedGroup Asubg

41、roupsDevicetypeLimits UnitMin MaxRead clock reference,relative to REFCLKt16/ 9, 10, 11 All -1 +1 %REFCLK clock periodreferenced to sourceword ratet27/ 9, 10, 11 All -0.1 +0.1 %Read clock period t38/ 9, 10, 11 All 30.3 62.5 nsBit time t4Internal bit clock 9/ 13/ 9 All 3.03 6.25 ns10, 11 Read clock hi

42、gh pulse t58/ 9, 10, 11 All 5t -34nsRead clock low pulse t68/ 9, 10, 11 All 5t -34nsG09RG09DG09Y hold time t79, 10, 11 All t -34nsG09RG09DG09Y pulse fall to CKR high t89, 10, 11 All 5t -34nsG09RG09DG09Y pulse width high t99, 10, 11 All 4t -34nsData access time t1010/ 11/ 9, 10, 11 All 2t -242t +44ns

43、Data hold time t1110/ 11/ 9, 10, 11 All t -34nsData hold time from CKRriset1210/ 11/ 9, 10, 11 All 2t -34nsREFCLK clock pulse high t139, 10, 11 All 6.5 nsREFCLK clock pulse low t149, 10, 11 All 6.5 nsPropagation delay SI to SO t1512/ 9, 10, 11 All 20 nsStatic alignment t1613/ 14/ 9 All 100 ps10, 11

44、Error free window t1713/ 15/ 9 All 0.9t4ps10, 11 See footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGDEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000SIZEA5962-96896REVISION LEVEL SHEET7DSCC

45、 FORM 2234APR 97TABLE I. Electrical performance characteristics - Continued.1/ Unless otherwise specified, for dc test parameters, all test conditions shall be worst case conditions; V = 2.0 V andIHV = 0.8 V. For ac test parameters, all tests are performed using the input waveforms in figure 4. The

46、following conditionsILalso apply:All timing references are made with respect to +1.5 V for TTL-level signals or to the 50% point between V and VOH OLfor PECL levels. PECL input rise and fall times must be 1 ns between the 20% and 80% points. TTL input rise andfall time must be 1 ns between 1 V and 2

47、 V points.2/ Tested one output at a time, output shorted for less than one second, less than 10% duty cycle.3/ Applies to A/G09B only.4/ Input currents are always positive at all voltages above V /2.CC5/ Maximum I is measured with V = max, RF = low, and outputs unloaded.CCR CC6/ The period of t will

48、 match the period of the transmitter byte clock when the receiver is receiving serial data. When data is1interrupted, t may drift to one of the range limits.17/ The receiver REFCLK has no phase or frequency relationship to the CKR and only acts as a centering reference to reduceclock synchronization time. REFCLK must be within 0.1% of the transmitted byte clock, necessitating a 500 ppm crystalreference.8/ This parameter does not apply during framing o

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1