KS D ISO 22493-2012 Microbeam analysis－Scanning electron microscopy－Vocabulary《微光束分析 扫描电子显微镜 术语》.pdf

1、 KSKSKSKSKSKSKSK KSKSKS KSKSK KSKS KSK KS KS D ISO 22493 KS D ISO 22493:2012 2012 12 7 http:/www.kats.go.krKS D ISO 22493:2012 : ( ) ( ) () () ( ) : () () : (http:/www.standard.go.kr) ： ：2012 12 7 2012-0687 ： ： ( 02-509-7274) (http:/www.kats.go.kr). 10 5 , . KS D ISO 22493:2012 i ii 1 1 2 1 3 (SEM)

2、.1 4 (SEM) .6 5 SEM .13 6 SEM .17 7 SEM 19 21 KS D ISO 22493:2012 ii 2008 1 ISO 22493, Microbeam analysis Scanning electron microscopyVocabulary . KS D ISO 22493:2012 Microbeam analysis Scanning electron microscopy Vocabulary 1 (SEM) . KS D ISO 23833 . SEM . (： EPMA, AEM, EDS) . 2 AEM / (analytical

3、electron microscope/microscopy) BSE (BE, backscattered electron) CPSEM / (controlled pressure scanning electron microscope/microscopy) CRT (cathode ray tube) EBIC (electron beam induced current) EBSD (electron backscatter/backscattering diffraction) EDS X / (energy dispersive X-ray spectrometer/spec

4、trometry) EDX X (energy dispersive X-ray spectrometry) EPMA / (electron probe microanalyser/analysis) ESEM / (environmental scanning electron microscope/microscopy) FWHM (full width at half maximum) SE 2 (secondary electron) SEM / (scanning electron microscope/microscopy) VPSEM / (variable-pressure

5、scanning electron microscope/microscopy) 3 (SEM) 3.1 (electron optics) ( ) 3.1.1 (electron source) KS D ISO 22493:2012 2 3.1.1.1 (energy spread) 3.1.1.2 (effective source size) (electron source) 3.1.2 (electron emission) 3.1.2.1 (field emission) 3.1.2.1.1 (cold field emission) 3.1.2.1.2 ( , Shottky

6、emission) 3.1.2.2 (thermionic emission) (work function) 3.1.3 (electron lens) ( ) 3.1.3.1 (electrostatic lens) 3.1.3.2 (electromagnetic lens) ( ) 3.1.4 (focusing) 3.1.5 (demagnification) KS D ISO 22493:2012 3 3.2 (electron scattering) ( ) ( ) ( ) 3.2.1 (elastic scattering) 3.2.1.1 (back scattering)

7、3.2.2 (inelastic scattering) 0.01 rad . 3.2.3 (scattering cross-section) (m2) . 3.2.4 (mean free path) 3.2.5 (Bethe range) (： 1 keV) ( ) , . 3.3 (BSE) 50 eV . 3.3.1 (BSE ) 3.3.2 BSE (BSE angular distribution) KS D ISO 22493:2012 4 3.3.3 BSE (BSE atomic number dependence) 3.3.4 BSE (BSE beam energy d

8、ependence) 3.3.5 BSE (BSE depth distribution) 3.3.6 BSE (BSE energy distribution) 3.3.7 BSE (BSE escape depth) 3.3.8 BSE (BSE lateral spatial distribution) 2 3.4 2 (SE, secondary electron) 1 2 50 eV . 3.4.1 SE / (SE yield/coefficient) 2 3.4.2 SE (SE angular distribution) 2 3.4.3 SE (SE energy distri

9、bution) 2 3.4.4 SE (SE escape depth) 2 3.4.5 SE (SE tilt dependence) 2 KS D ISO 22493:2012 5 3.4.6 SE1(SEI) 2 3.4.7 SE2(SEII) 2 3.4.8 SE3(SEIII) 2 3.4.9 SE4(SEIV) 2 3.5 (electron penetration) ( ) 3.5.1 (electron range) 3.5.2 (interaction volume) 3.5.3 (information volume) 3.5.4 (penetration depth) (

10、target) 3.5.5 (Monte Carlo simulation) 3.6 (electron channelling) 3.7 (electron diffraction) KS D ISO 22493:2012 6 3.7.1 (EBSD) 4 (SEM) 4.1 (electron gun) 4.1.1 (field emission gun) 4.1.1.1 (cold field emission gun) 4.1.1.1.1 (extracting electrode) 4.1.1.1.2 (flashing) (tip) 4.1.1.2 (thermal field e

11、mission gun) 4.1.2 (thermionic emission gun) 4.1.2.1 (tungsten hairpin gun) 4.1.2.2 LaB6 LaB6 4.1.2.3 (anode) 4.1.2.4 (cathode) KS D ISO 22493:2012 7 4.1.2.5 (Wehnelt cylinder) 4.1.3 (brightness) , . 4I/(2d22) I ： (： A) d ： (： m) ： (： ) 4.1.4 (reduced brightness) ( ) /V ： V ： 4.1.5 (emission current

12、) 4.1.6 (saturation) , 4.2 (electron lens system) 4.2.1 (aberration, 收差 ) (： , , ) 4.2.1.1 (chromatic aberration) KS D ISO 22493:2012 8 4.2.1.2 (spherical aberration) 4.2.2 (aperture) 4.2.2.1 (aperture angle) 4.2.2.2 (aperture diffraction) (Gauss) 4.2.2.3 (objective aperture) 4.2.2.4 (virtual object

13、ive aperture) 4.2.3 (astigmatism) 90 , , , . 4.2.3.1 (stigmator) 4.2.4 (condenser lens) 3 . 4.2.5 (objective lens) . KS D ISO 22493:2012 9 4.2.5.1 (conical lens) 4.2.5.2 (immersion lens) 4.2.5.3 (snorkel lens) , , 4.3 (scanning system) 1 2 4.3.1 (analogue scanning system) x ( ) y ( ) ( ) 4.3.2 (digi

14、tal scanning system) (x, y) , ( ) , ( ) 4.3.3 (double deflection) ( ) 4.3.4 (dwell time) 4.4 (specimen chamber) 4.4.1 (charge balance) (2 , ) 4.4.2 (differential pumping) KS D ISO 22493:2012 10 4.4.3 SEM (VPSEM) (CPSEM)(4.4.7) . 4.4.4 SEM (ESEM) (CPSEM)(4.4.7) . 4.4.5 (gas path length) 4.4.6 (gas am

15、plification) - 2 4.4.7 (CPSEM) 1 Pa 5 000 Pa , 2 (2 ) , (4.4.6), SE (4.6.2.6), , BSE . (SEM) . 4.5 (specimen) 4.5.1 (specimen stage) , , x y z , , . 4.5.2 (working distance) (pole piece) . 4.5.3 (contamination) . KS D ISO 22493:2012 11 4.5.4 (coating) 4.5.5 (edge effect) (SEM) 4.6 (signal detection)

16、 4.6.1 (detector) 4.6.2 (electron detector) 4.6.2.1 BSE-SE (BSE to SE conversion detector) (BSE) 2 (SE) SE BSE Everhart Thornley 4.6.2.2 EBSD CCD (EBSD CCD-based camera) (phosphor screen), , EBSD 4.6.2.3 IR (IR camera) 4.6.2.4 (channel plate detector) SE BSE . 4.6.2.5 / BSE (combined scintillator/li

17、ght guide BSE detector) ( ) 2 BSE BSE 4.6.2.6 SE (environmental SE detector) SE SE- VPSEM CPSEM SE KS D ISO 22493:2012 12 4.6.2.7 Everhart-Thornley (Everhart-Thornley detector) T. Everhart R.F.M. Thornley SE . . 4.6.2.8 SE (gas SE detector) SE (4.6.2.6) . 4.6.2.9 (solid-state diode detector) , , , ,

18、 BSE 4.6.2.10 TTL through-the-lens(TTL) detector SE/BSE SE/BSE . 4.6.2.11 (in-lens detector) SE/BSE SE/BSE 4.6.3 (take-off angle) X . X KS D ISO 23833 X . 4.7 (signal processing) . 4.7.1 ( ) 4.7.2 (dynamic range) 4.7.3 (derivative processing) KS D ISO 22493:2012 13 5 SEM 5.1 (scanning) 5.1.1 (area s

19、canning) SEM x y 5.1.2 (line scanning) (x y) 5.1.2.1 y (y modulation) CRT y 5.1.3 (scanning distortion) (fidelity) 5.1.3.1 (Moir effects) 5.2 SEM (SEM imaging) 5.2.1 (analogue imaging) (SEM) 5.2.2 (digital imaging) (SEM) 5.2.2.1 (digital resolution) , (picture elements) (pixels) (： 512512, 1 0241 024) 5.2.2.2 2 KS D ISO 22493:2012 14 8 256 5.2.2.2.1 (bit depth) (color depth) (pixel depth) 2 1 5.2.2.2 . 2 (SEM) 8 , 12 , 16 , 24 , 32 . - (grey-scale) 8 , 12 , 16 256, 4 096, 64 536 - (grey-level) . 5.2.3 (depth of field) 5.2.4 (pixel) , CRT