1、 IEC 60749-15 Edition 2.0 2010-10 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Mechanical and climatic test methods Part 15: Resistance to soldering temperature for through-hole mounted devices Dispositifs semiconducteurs Mthodes dessai mcaniques et climatiques Partie 15: Rsista
2、nce la temprature de soudage pour dispositifs par trous traversants IEC 60749-15:2010 THIS PUBLICATION IS COPYRIGHT PROTECTED Copyright 2010 IEC, Geneva, Switzerland All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in any form or by any means
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16、s sur cette publication ou si vous avez des questions, visitez le FAQ du Service clients ou contactez-nous: Email: csciec.ch Tl.: +41 22 919 02 11 Fax: +41 22 919 03 00 IEC 60749-15 Edition 2.0 2010-10 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Mechanical and climatic test met
17、hods Part 15: Resistance to soldering temperature for through-hole mounted devices Dispositifs semiconducteurs Mthodes dessai mcaniques et climatiques Partie 15: Rsistance la temprature de soudage pour dispositifs par trous traversants INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECH
18、NIQUE INTERNATIONALE G ICS 31.080.01 PRICE CODE CODE PRIX ISBN 978-2-88912-231-8 Registered trademark of the International Electrotechnical Commission Marque dpose de la Commission Electrotechnique Internationale 2 60749-15 IEC:2010 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES M
19、ECHANICAL AND CLIMATIC TEST METHODS Part 15: Resistance to soldering temperature for through-hole mounted devices FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committe
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29、ublications is indispensable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. International
30、 Standard IEC 60749-15 has been prepared by IEC technical committee 47: Semiconductor devices. This second edition cancels and replaces the first edition published in 2003 and constitutes a technical revision. The significant changes with respect from the previous edition include: editorial change i
31、n the scope, addition of lead-free solder chemical composition specification. 60749-15 IEC:2010 3 The text of this standard is based on the following documents: FDIS Report on voting 47/2067/FDIS 47/2078/RVD Full information on the voting for the approval of this standard can be found in the report
32、on voting indicated in the above table. This publication has been drafted in accordance with the ISO/IEC Directives, Part 2. A list of all parts in the IEC 60749 series, under the general title Semiconductor devices - Mechanical and climatic test methods, can be found on the IEC website. The committ
33、ee has decided that the contents of this publication will remain unchanged until the stability date indicated on the IEC website under “http:/webstore.iec.ch“ in the data related to the specific publication. At this date, the publication will be reconfirmed; withdrawn; replaced by a revised edition,
34、 or amended. 4 60749-15 IEC:2010 SEMICONDUCTOR DEVICES MECHANICAL AND CLIMATIC TEST METHODS Part 15: Resistance to soldering temperature for through-hole mounted devices 1 Scope This part of IEC 60749 describes a test used to determine whether encapsulated solid state devices used for through-hole m
35、ounting can withstand the effects of the temperature to which they are subjected during soldering of their leads by using wave soldering or a soldering iron. In order to establish a standard test procedure for the most reproducible methods, the solder dip method is used because of its more controlla
36、ble conditions. This procedure determines whether devices are capable of withstanding the soldering temperature encountered in printed wiring board assembly operations, without degrading their electrical characteristics or internal connections. This test is destructive and may be used for qualificat
37、ion, lot acceptance and as a product monitor. This test is, in general, in conformity with IEC 60068-2-20 but, due to specific requirements of semiconductors, the clauses of this standard apply. 2 General The heat is conducted through the leads into the device package from solder heat at the reverse
38、 side of the board. This procedure does not simulate wave soldering or reflow heat exposure on the same side of the board as the package body. 3 Test apparatus 3.1 3.2 3.3 Solder pot A solder pot of sufficient size to contain at least 1 kg of solder shall be used. The solder pot dimensions shall all
39、ow full immersion of the leads without touching the bottom. The apparatus shall be capable of maintaining the solder at the temperature specified in Table 1. Dipping device A mechanical dipping device shall be used that is capable of controlling the rates of immersion and emersion of the leads and p
40、roviding the dwell time as specified in Table 1. Heatsinks or shielding If applicable, heatsinks or shielding shall be attached to the devices prior to the test and shall be as specified in the relevant specification. 60749-15 IEC:2010 5 Table 1 Parameters for solder dipping Parameter Condition A (f
41、or wave solder) Condition B (for soldering iron) Temperature of molten solder C 260 5 350 5 Number of immersions 2 2 Immersion rate mm s 1 25 5 25 5 Dwell time s 10 5 10 5 Emersion rate mm s 1 25 5 25 5 Distance between solder bath and device body mm 1,5 0,5 1,5 0,5 4 Materials 4.1 4.2 5.1 5.2 Solde
42、r The solder specification shall be as follows. Chemical composition for SnPb solder the composition in percentage by weight shall be as follows: Tin: 59 % to 65 %; Lead: the remainder. Chemical composition for Pb-free solder the composition in percentage by weight shall be as follows: Silver: 3 % t
43、o 4 %; Copper: 0.5 % to 1 %; Tin: the remainder. The solder shall not contain impurities which will adversely affect its properties. Other solders and their applicable bath temperatures may be used as specified in the relevant specification. Flux If flux is applied prior to solder dipping, the flux
44、shall consist of 25 % by weight of colophony in 75 % by weight of isopropyl alcohol, unless otherwise detailed in the relevant specification. 5 Procedure Pre-conditioning of specimens Any special pre-conditioning of the specimens prior to testing shall be as specified in the relevant specification.
45、This preparation may include operations such as bending or other relocation of leads, and the attachment of heat sinks or protective shielding prior to solder dipping. Preparation of the solder bath The molten solder shall be stirred to assure that the temperature is uniform. The dross shall be skim
46、med from the surface of the molten solder just prior to dipping the part. 6 60749-15 IEC:2010 5.3 5.4 5.5 5.6 5.7 Use of flux Where detailed in the relevant specification, all leads of the specimen shall be dipped in flux prior to solder dip; excess flux shall be removed by draining for a suitable t
47、ime. Solder dip The part shall be attached to the dipping device (see 3.2) and the leads immersed in the molten solder until the body of the device under test reaches the dimensions specified in Table 1. The parameters for solder temperature, dwell time, number of immersions and rates of immersion a
48、nd emersion are defined in Table 1. Unless otherwise detailed in the procurement specification, Condition A shall be used. After the dipping process, the part shall be allowed to cool in air and, if flux has been used, residues shall be removed with isopropanol or ethanol. Precautions Prior to and a
49、fter the solder immersion, precautionary measures shall be taken to prevent undue exposure of the part to the heat radiated by the solder bath. Measurements Hermeticity tests for hermetic devices, visual examination and electrical measurements that consist of parametric and functional tests, shall be made as specified in the relevant specification. Failure criteria A devic
