1、 IEC 60749-38Edition 1.0 2008-02INTERNATIONAL STANDARD NORME INTERNATIONALESemiconductor devices Mechanical and climatic test methods Part 38: Soft error test method for semiconductor devices with memory Dispositifs semiconducteurs Mthodes dessais mcaniques et climatiques Partie 38: Mthode dessai de
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16、ires sur cette publication ou si vous avez des questions, visitez le FAQ du Service clients ou contactez-nous: Email: csciec.ch Tl.: +41 22 919 02 11 Fax: +41 22 919 03 00 IEC 60749-38Edition 1.0 2008-02INTERNATIONAL STANDARD NORME INTERNATIONALESemiconductor devices Mechanical and climatic test met
17、hods Part 38: Soft error test method for semiconductor devices with memory Dispositifs semiconducteurs Mthodes dessais mcaniques et climatiques Partie 38: Mthode dessai des erreurs logicielles pour les dispositifs semiconducteurs avec mmoire INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECT
18、ROTECHNIQUE INTERNATIONALE MICS 31.080.01 PRICE CODECODE PRIXISBN 2-8318-9615-0 2 60749-38 IEC:2008 CONTENTS FOREWORD.3 1 Scope.5 2 Terms and definitions .5 3 Test apparatus .7 3.1 Measurement equipment .7 3.2 Alpha radiation source.7 3.2.1 Background information.7 3.2.2 Preferred sources7 3.2.3 Var
19、iation in results.7 3.2.4 Effect of high radiation levels.7 3.2.5 Measurement accuracy8 3.3 Test sample 8 4 Procedure 8 4.1 Alpha radiation accelerated soft error test .8 4.1.1 Surface preparation .8 4.1.2 Power supply voltage 8 4.1.3 Ambient temperature .9 4.1.4 Core cycle time9 4.1.5 Data pattern
20、9 4.1.6 Distance between chip and radiation source 9 4.1.7 Number of measurement samples9 4.2 Real-time soft error test.9 4.2.1 General .9 4.2.2 Power supply voltage 9 4.2.3 Ambient temperature .9 4.2.4 Operating frequency 9 4.2.5 Data pattern 10 4.2.6 Test time .10 4.2.7 Number of test samples.10 4
21、2.8 Environmental neutron testing .10 4.3 Neutron radiation accelerated soft error test10 5 Evaluation 10 5.1 Alpha radiation accelerated soft error test .10 5.2 Real-time soft error test.11 6 Summary12 Bibliography13 Figure 1 Effect of source-device spacing on normalized flux at device .8 Table 1
22、X for FIT calculation 11 60749-38 IEC:2008 3 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES MECHANICAL AND CLIMATIC TEST METHODS Part 38: Soft error test method for semiconductor devices with memory FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide org
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33、ard IEC 60749-38 has been prepared by IEC technical committee 47: Semiconductor devices. The text of this standard is based on the following documents: FDIS Report on voting 47/1943/FDIS 47/1951/RVD Full information on the voting for the approval of this standard can be found in the report on voting
34、 indicated in the above table. This publication has been drafted in accordance with the ISO/IEC Directives, Part 2. 4 60749-38 IEC:2008 A list of all the parts in the IEC 60749 series, under the general title Semiconductor devices Mechanical and climatic test methods, can be found on the IEC website
35、 The committee has decided that the contents of this publication will remain unchanged until the maintenance result date indicated on the IEC web site under “http:/webstore.iec.ch“ in the data related to the specific publication. At this date, the publication will be reconfirmed; withdrawn; replace
36、d by a revised edition, or amended. 60749-38 IEC:2008 5 SEMICONDUCTOR DEVICES MECHANICAL AND CLIMATIC TEST METHODS Part 38: Soft error test method for semiconductor devices with memory 1 Scope This part of IEC 60749 establishes a procedure for measuring the soft error susceptibility of semiconductor
37、 devices with memory when subjected to energetic particles such as alpha radiation. Two tests are described; an accelerated test using an alpha radiation source and an (unaccelerated) real-time system test where any errors are generated under conditions of naturally occurring radiation which can be
38、alpha or other radiation such as neutron. To completely characterize the soft error capability of an integrated circuit with memory, the device must be tested for broad high energy spectrum and thermal neutrons using additional test methods. This test method may be applied to any type of integrated
39、circuit with memory device. 2 Terms and definitions For the purposes of this document, the following terms and definitions apply. 2.1 single-event upset SEU soft error caused by the transient signal induced by a single energetic-particle strike 2.2 soft error erroneous output signal from a latch or
40、memory cell that can be corrected by performing one or more normal functions of the device containing the latch or memory cell NOTE As commonly used, the term refers to an error caused by radiation or electromagnetic pulses and not to an error associated with a physical defect introduced during the
41、manufacturing process. 2.3 single-event hard error SHE irreversible change in operation resulting from a single radiation event and typically associated with permanent damage to one or more of the device elements (e.g. gate oxide rupture) 2.4 static soft error soft error that is not corrected by rep
42、eated reading but can be corrected by rewriting without the removal of power 2.5 transient soft error soft error that can be corrected by repeated reading without rewriting and without the removal of power 6 60749-38 IEC:2008 2.6 soft error, power cycle PCSE soft error that is not corrected by repea
43、ted reading or writing but can be corrected by the removal of power 2.7 single event functional interrupt SEFI soft error that causes the component to reset, lock-up, or otherwise malfunction in a detectable way, but does not require power cycling of the device (off and back on) to restore operabili
44、ty, unlike single-event latch-up (SEL), or result in permanent damage as in single-event burnout (SEB) 2.8 multiple bit upset MBU multiple-cell upset in which two or more error bits occur in the same word 2.9 single event latch up SEL abnormal high-current state in a device caused by the passage of
45、a single energetic particle through sensitive regions of the device structure and resulting in the loss of device functionality NOTE 1 SEL may cause permanent damage to the device. If the device is not permanently damaged, power cycling of the device (off and back on) is necessary to restore normal
46、operation. NOTE 2 An example of SEL in a CMOS device is when the passage of a single particle induces the creation of parasitic bipolar (p-n-p-n) shorting of power to ground. 2.10 flux (of particle radiation) time rate of flow of particles emitted from or incident on a surface, divided by the area o
47、f that surface NOTE The flux is usually expressed in particles per square centimeter second (N/cm2s) or particles per square centimeter hour (N/cm2h). 2.11 alpha source activity number of alpha particle decays in the alpha source per unit time NOTE The preferred SI unit is the Becquerel (Bq); to con
48、vert from the Curie, multiply by 3,7 1010(exactly). 2.12 soft error rate SER rate at which soft errors occur 2.13 failures in time FIT the number of failures in 109device-hours 2.14 multiple-cell upset MCU single event that induces several bits in an IC to have a soft error at one time 60749-38 IEC:
49、2008 7 NOTE The bits are usually, but not always, adjacent. 3 Test apparatus 3.1 Measurement equipment The equipment shall be capable of measuring the functions of the integrated circuit devices, and capable of measuring the time taken for the change of stored data by the exposure to energetic particles, such as alpha radiation to take place (i.e. the generation of a soft error). Alternatively, the
