1、 IEC 60749-43 Edition 1.0 2017-06 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Mechanical and climatic test methods Part 43: Guidelines for IC reliability qualification plans Dispositifs semiconducteurs Mthodes dessais mcaniques et climatiques Partie 43: Lignes directrices conce
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19、 86 et CISPR de lIEC. Service Clients - webstore.iec.ch/csc Si vous dsirez nous donner des commentaires sur cette publication ou si vous avez des questions contactez-nous: csciec.ch. IEC 60749-43 Edition 1.0 2017-06 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Mechanical and cli
20、matic test methods Part 43: Guidelines for IC reliability qualification plans Dispositifs semiconducteurs Mthodes dessais mcaniques et climatiques Partie 43: Lignes directrices concernant les plans de qualification de la fiabilit des CI INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTEC
21、HNIQUE INTERNATIONALE ICS 31.080.01 ISBN 978-2-8322-4471-5 Registered trademark of the International Electrotechnical Commission Marque dpose de la Commission Electrotechnique Internationale Warning! Make sure that you obtained this publication from an authorized distributor. Attention! Veuillez vou
22、s assurer que vous avez obtenu cette publication via un distributeur agr. colour inside 2 IEC 60749-43:2017 IEC 2017 CONTENTS FOREWORD . 4 INTRODUCTION . 6 1 Scope 7 2 Normative references 7 3 Terms and definitions 8 4 Product categories and applications 8 5 Failure . 9 5.1 Failure distribution 9 5.
23、2 Early failure 10 5.2.1 Description 10 5.2.2 Early failure rate 11 5.2.3 Screening 14 5.3 Random failure . 17 5.3.1 Description 17 5.3.2 Mean failure rate . 17 5.4 Wear-out failure 20 5.4.1 Description 20 5.4.2 Wear-out failure rate 20 6 Reliability test 23 6.1 Reliability test description . 23 6.2
24、 Reliability test plan . 23 6.2.1 Procedures for creating a reliability test plan . 23 6.2.2 Estimation of the test time required to confirm the TDDB from the number of test samples . 26 6.2.3 Estimation of the number of samples required to confirm the TDDB from the test time. 27 6.3 Reliability tes
25、t methods . 28 6.4 Acceleration models for reliability tests . 31 6.4.1 Arrhenius model 31 6.4.2 V-model: 32 6.4.3 Absolute water vapor pressure model 32 6.4.4 Coffin-Manson model . 32 7 Stress test methods . 32 8 Supplementary tests 33 9 Summary table of assumptions 34 10 Summary . 36 Bibliography
26、37 Figure 1 Bathtub curve . 10 Figure 2 Failure process of IC manufacturing lots during the early failure period . 11 Figure 3 Weibull conceptual diagram of the early failure rate . 12 Figure 4 Example of a failure ratio: (in hundreds) and the number of failures for CL of 60 % 14 Figure 5 Screening
27、and estimated early fail rate in Weibull diagram 15 Figure 6 Bathtub curve setting the point immediately after production as the origin . 16 IEC 60749-43:2017 IEC 2017 3 Figure 7 Bathtub curve setting the point after screening as the origin 17 Figure 8 Conceptual diagram of calculation method for th
28、e mean failure rate from the exponential distribution . 18 Figure 9 Conceptual diagram of calculation method for the mean failure rate as an extension of early failure . 19 Figure 10 Conceptual diagram of the wear-out failure 21 Figure 11 Conceptual diagram describing the concept of the acceleration
29、 test 21 Figure 12 Concept of the reliability test in a Weibull diagram (based on sample size) . 25 Figure 13 Concept of the reliability test in a Weibull diagram (based on test time) 28 Figure 14 Difference in sampling sizes according to the m value (image) . 29 Table 1 Examples of product categori
30、es . 9 Table 2 Cumulative failure probability 0,1 % over 10 years 10 6 for the third, fifth and seventh years 25 Table 3 Major reliability (life) test methods and purposes . 30 Table 4 Examples of the number of test samples and the test time in typical reliability (life) test methods 31 Table 5 LTPD
31、 sampling table for acceptance number Ac = 0 33 Table 6 Major reliability (strength) test methods and purposes . 33 Table 7 Supplementary tests 34 Table 8 Accelerating factors, calculation formulae and numerical values a35 4 IEC 60749-43:2017 IEC 2017 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMI
32、CONDUCTOR DEVICES MECHANICAL AND CLIMATIC TEST METHODS Part 43: Guidelines for IC reliability qualification plans FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committe
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43、 Standard IEC 60749-43 has been prepared by IEC technical committee 47: Semiconductor devices. The text of this International Standard is based on the following documents: FDIS Report on voting 47/2389/FDIS 47/2406/RVD Full information on the voting for the approval of this International Standard ca
44、n be found in the report on voting indicated in the above table. This document has been drafted in accordance with the ISO/IEC Directives, Part 2. IEC 60749-43:2017 IEC 2017 5 A list of all parts in the IEC 60749 series, published under the general title Semiconductor devices Mechanical and climatic
45、 test methods, can be found on the IEC website. The committee has decided that the contents of this document will remain unchanged until the stability date indicated on the IEC website under “http:/webstore.iec.ch“ in the data related to the specific document. At this date, the document will be reco
46、nfirmed, withdrawn, replaced by a revised edition, or amended. IMPORTANT The colour inside logo on the cover page of this publication indicates that it contains colours which are considered to be useful for the correct understanding of its contents. Users should therefore print this document using a
47、 colour printer. 6 IEC 60749-43:2017 IEC 2017 INTRODUCTION This document provides guidelines for semiconductor IC vendors in the preparation of detailed reliability test plans for device qualification. Such plans are intended to be prepared before commencing qualification tests and after consultatio
48、n with the user of their semiconductor integrated circuit product. The guideline gives some examples for creating reliability qualification test plans to determine appropriate reliability test conditions based on the quality standards demanded in use conditions for each application of semiconductor
49、integrated circuits. Categories are set for automotive applications and for general applications as a target of reliability. The grade for automotive use is further classified into two grades according to applications. The guideline assumes annual operating hours, useful life, etc. for each grade, and defines the verification methods for early failure rate and wear-out