1、 IEC 62047-9 Edition 1.0 2011-07 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Micro-electromechanical devices Part 9: Wafer to wafer bonding strength measurement for MEMS Dispositifs semiconducteurs Dispositif microlectromcaniques Partie 9: Mesure de la rsistance de collage de d
2、eux plaquettes pour les MEMS IEC62047-9:2011 colourinsideTHIS PUBLICATION IS COPYRIGHT PROTECTED Copyright 2011 IEC, Geneva, Switzerland All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in any form or by any means, electronic or mechanical, i
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16、i vous avez des questions, visitez le FAQ du Service clients ou contactez-nous: Email: csciec.ch Tl.: +41 22 919 02 11 Fax: +41 22 919 03 00 IEC 62047-9 Edition 1.0 2011-07 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Micro-electromechanical devices Part 9: Wafer to wafer bondin
17、g strength measurement for MEMS Dispositifs semiconducteurs Dispositif microlectromcaniques Partie 9: Mesure de la rsistance de collage de deux plaquettes pour les MEMS INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE T ICS 31.080.99 PRICE CODE CODE PRIX ISBN 978-
18、2-88912-585-2 Registered trademark of the International Electrotechnical Commission Marque dpose de la Commission Electrotechnique Internationale colourinside 2 62047-9 IEC:2011 CONTENTS FOREWORD. 4 1 Scope 6 2 Normative references . 6 3 Measurement methods . 6 3.1 General . 6 3.2 Visual test . 6 3.
19、2.1 Types of visual test 6 3.2.2 Equipment . 7 3.2.3 Procedure 7 3.2.4 Expression of results 7 3.3 Pull test . 7 3.3.1 General . 7 3.3.2 Equipment . 8 3.3.3 Procedure 8 3.3.4 Expression of results 9 3.4 Double cantilever beam test using blade 9 3.4.1 General . 9 3.4.2 Equipment . 11 3.4.3 Procedure
20、11 3.4.4 Expression of results 11 3.5 Electrostatic test 12 3.5.1 General . 12 3.5.2 Equipment . 13 3.5.3 Procedure 13 3.5.4 Expression of results 14 3.6 Blister test . 14 3.6.1 General . 14 3.6.2 Preparation of the specimens . 15 3.6.3 Test apparatus and testing method . 15 3.6.4 Report . 16 3.7 Th
21、ree-point bending test 16 3.7.1 General . 16 3.7.2 Preparation of the specimens . 17 3.7.3 Test apparatus and testing method . 18 3.7.4 Report . 19 3.8 Die shear test 19 3.8.1 General . 19 3.8.2 Preparation of the specimens . 20 3.8.3 Test apparatus . 21 3.8.4 Test method . 21 3.8.5 Shear bonding st
22、rength 22 3.8.6 Report . 22 Annex A (informative) Example of bonding force . 23 Annex B (informative) An example of the fabrication process for three-point bending specimens 24 Bibliography . 25 62047-9 IEC:2011 3 Figure 1 Bonding strength measurement pull test . 8 Figure 2 Bonding strength measurem
23、ent double cantilever beam (DCB) test specimen using blade . 10 Figure 3 Bonding strength measurement electrostatic test . 13 Figure 4 A specimen for blister test 15 Figure 5 Three-point bending specimen and loading method . 17 Figure 6 Specimen geometry of three-point bending specimen 18 Figure 7 D
24、ie shear testing set-up 19 Figure 8 Size requirement of control tool and specimen 20 Figure 9 Example of bonded region in test piece . 20 Figure 10 Setting of contact tool . 22 Figure A.1 An example of bonding force or load measurement with time at constant rate of upper fixture moving 23 Figure B.1
25、 An example of specimen preparation for three-point bending test . 24 Table 1 Example of visual test 7 Table 2 Example of pull test . 9 Table 3 Example of Double Cantilever Beam test using blade . 12 Table 4 Example of electrostatic test 14 4 62047-9 IEC:2011 INTERNATIONAL ELECTROTECHNICAL COMMISSIO
26、N _ SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 9: Wafer to wafer bonding strength measurement for MEMS FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Com
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37、onal Standard IEC 62047-9 has been prepared by subcommittee 47F: Micro-electromechanical systems, of IEC technical committee 47: Semiconductor devices: The text of this standard is based on the following documents: FDIS Report on voting 47F/82/FDIS 47F/92/RVD Full information on the voting for the a
38、pproval of this standard can be found in the report on voting indicated in the above table. This publication has been drafted in accordance with the ISO/IEC Directives, Part 2. 62047-9 IEC:2011 5 The committee has decided that the contents of this publication will remain unchanged until the stabilit
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40、 copy. IMPORTANT The colour inside logo on the cover page of this publication indicates that it contains colours which are considered to be useful for the correct understanding of its contents. Users should therefore print this document using a colour printer. 6 62047-9 IEC:2011 SEMICONDUCTOR DEVICE
41、S MICRO-ELECTROMECHANICAL DEVICES Part 9: Wafer to wafer bonding strength measurement for MEMS 1 Scope This standard describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and
42、applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 m to several millimeters. 2 Normative references The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited app
43、lies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 60749-19, Semiconductor devices Mechanical and climatic test methods Part 19: Die shear strength ISO 6892-1: 2009, Metallic materials Tensile testing Part1: Method of test at room temp
44、erature ASTM E399-06e2: 2008, Standard Test Method for Linear-Elastic Plane-Strain Fracture Toughness K Ic of Metallic Materials 3 Measurement methods 3.1 General There are different ways to measure bonding strength such as visual test, pull test, double cantilever beam test using blade, electrostat
45、ic test, blister test, three-point bend test, and die shear test. 3.2 Visual test 3.2.1 Types of visual test From colour change of silicon substrate and surface of glass, this method tells you only a general information like whether the material is bonded or not. The visual test shall be performed t
46、o confirm whether substantial other bonding tests are required, and/or to identify the area that the bonding tests shall be conducted. Optical microscope shall be used to evaluate the bonding interface of glass to silicon and glass to glass. An infrared (IR) camera shall be used to observe voids exi
47、sting in the bonding interface of silicon to silicon NOTE Visual test is a simple qualitative test method. 62047-9 IEC:2011 7 3.2.2 Equipment One or a few equipments of optical microscope, scanning acoustic microscope, scanning electron microscope (SEM), transmission electron microscope (TEM), and I
48、R or optical camera can be used. 3.2.3 Procedure Steps to measure voids areas are as follows: a) To observe voids, use the IR or optical microscope. b) To take images of voids, use the IR or optical camera, or scanning acoustic microscope. c) Measure voids areas using the observed images. 3.2.4 Expr
49、ession of results Check and simply indicate using the mark “V” the observation result based on Note 1 in Table 1 for each case. Table 1 Example of visual test good fair poor Visual test NOTE 1 good complete bonded area fraction larger than 95 %, fair complete bonded area fraction larger than 75 %, poor complete bonded area fraction less than 75 %. 3.3 Pull te
