1、 IEC 62417Edition 1.0 2010-04INTERNATIONAL STANDARD NORME INTERNATIONALESemiconductor devices Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) Dispositifs semiconducteurs Essais dions mobiles pour transistors semiconducteur oxyde mtallique effet de champ (MOSFETs) IE
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16、Service clients ou contactez-nous: Email: csciec.ch Tl.: +41 22 919 02 11 Fax: +41 22 919 03 00 IEC 62417Edition 1.0 2010-04INTERNATIONAL STANDARD NORME INTERNATIONALESemiconductor devices Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) Dispositifs semiconducteurs E
17、ssais dions mobiles pour transistors semiconducteur oxyde mtallique effet de champ (MOSFETs) INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE HICS 31.080 PRICE CODECODE PRIXISBN 978-2-88910-696-7 Registered trademark of the International Electrotechnical Commissio
18、n Marque dpose de la Commission Electrotechnique Internationale 2 62417 IEC:2010 CONTENTS FOREWORD.3 1 Scope.5 2 Abbreviations and letter symbols 5 3 General description 5 4 Test equipment.6 5 Test structures .6 6 Sample size6 7 Conditions 6 8 Procedure 7 8.1 Bias temperature stress.7 8.2 Voltage sw
19、eep.7 9 Criteria .7 10 Reporting .8 62417 IEC:2010 3 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES MOBILE ION TESTS FOR METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFETs) FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for sta
20、ndardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, IEC publishes I
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28、onal Committees for any personal injury, property damage or other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC Publications. 8) Attention i
29、s drawn to the Normative references cited in this publication. Use of the referenced publications is indispensable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shal
30、l not be held responsible for identifying any or all such patent rights. International Standard IEC 62417 has been prepared by IEC technical committee 47: Semiconductor devices. The text of this standard is based on the following documents: FDIS Report on voting 47/2042/FDIS 47/2049/RVD Full informa
31、tion on the voting for the approval of this standard can be found in the report on voting indicated in the above table. This publication has been drafted in accordance with the ISO/IEC Directives, Part 2. 4 62417 IEC:2010 The committee has decided that the contents of this publication will remain un
32、changed until the stability date indicated on the IEC web site under “http:/webstore.iec.ch“ in the data related to the specific publication. At this date, the publication will be reconfirmed, withdrawn, replaced by a revised edition, or amended. 62417 IEC:2010 5 SEMICONDUCTOR DEVICES MOBILE ION TES
33、TS FOR METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFETs) 1 Scope This present standard provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. . It is applicable to both active and paras
34、itic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors. 2 Abbreviations and letter symbols This standard uses the following abbreviations and letter symbol
35、s: CV test capacitance-voltage measurement HFCV test high frequency capacitance-voltage measurement Vggate voltage toxoxide thickness Idsdrain-source current Vddpositive power supply voltage Vdd,maxmaximum supply voltage Vttransistor threshold voltage Vt,initialthe absolute value of the threshold vo
36、ltage before the test Vsupplythe absolute value of the supply voltage oxdielectric constant of the oxide 3 General description The stress applied is on test structures at an elevated temperature where mobile ions can overcome the energy barriers at the interfaces and the ion mobility in the oxide is
37、 sufficiently high. Two test methods are described in this document. Bias temperature stress (BTS) Voltage sweep (VS). The bias temperature stress test is done on transistors. The threshold voltage is determined from an Ids- Vgsmeasurement at room temperature on fresh structures. The threshold volta
38、ge is defined as the gate voltage needed to force a fixed drain current through the transistor. Then, a positive gate stress is applied at a high temperature, to sweep the mobile ions towards the substrate. After the stress the test structure is cooled to room temperature with the bias still applied
39、 A second Ids- Vgscurve is measured at room temperature. The sequence is completed with a negative gate stress at high temperature followed by an Ids- Vgsmeasurement at room temperature. Mobile charge causes a shift in the Ids- Vgscurve. The distance over which the curve is shifted is a measure of
40、the amount of mobile charge in the insulator. 6 62417 IEC:2010 Edge effects of the transistor structure can be taken into account by applying a negative gate bias for 2 minutes duration at the elevated temperature prior to the BTS measurement. NOTE Mobile charge in dielectric layers above a large ar
41、ea polysilicon or metal-plate cannot be detected, because there is no electric field which drives the ions towards the underlying oxide. To overcome this problem special edge sensitive test structures can be used, that have a large edge/area value, e.g. structures with fingers. The voltage sweep mea
42、surements are done on capacitors. A quasi-static C-V curve is measured and compared with a low-frequency C-V curve. The ionic displacement current, which appears as a peak in the quasi-static C-V curve, is indicative of the mobile ion concentration. 4 Test equipment The hot chuck shall be capable of
43、 maintaining a temperature of 250 C. A capacitance (LCR) meter is needed for HFCV measurements and quasi-static C-V measurements. A pA-meter is needed for low-frequency C-V (typical frequency = 1 kHz) measurements. The frequency for low-frequency C-V measurements may differ from 1 kHz as long as the
44、 accumulation and inversion capacitances differ no more than 10 %. 5 Test structures The test structures for bias temperature stress are transistors and, for voltage sweep, capacitors are used. The minimum area Aminof this capacitor is calculated from the voltage sweep rate dV/dt and the lowest meas
45、urable current Imin(determined by the resolution of the test equipment) according to the following equation: tVtIAoxoxd/d0minmin=(1) where 0is the permittivity of vacuum. 6 Sample size The recommended sample size is 5. 7 Conditions The electric field during stress is as follows: 1,0 MV/cm with a min
46、imum of (operating voltage +10 %) for gate oxide; 0,2 MV/cm for polysilicon gates on field oxide; 0,3 MV/cm for metal gates on field oxide. The electric field is calculated as Vg/tox. 62417 IEC:2010 7 8 Procedure 8.1 Bias temperature stress The test structures are subsequently subjected to the follo
47、wing procedures: measure the first Ids- Vgs(or HFCV) characteristic at room temperature; apply a positive gate bias to collect mobile ions at the silicon/oxide interface; ramp the temperature to 250 C; hold 5 min; ramp down to room temperature; remove bias; measure the second Ids- Vgs(or HFCV) chara
48、cteristic; apply a negative gate bias to collect mobile ions at the gate/oxide interface; ramp the temperature to 250 C; hold 5 min; ramp down to room temperature; remove bias; measure the third Ids- Vgs(or HFCV) characteristic. Ids- Vgscharacteristics may be measured at 250 C (fast tests). HFCV and
49、 Ids- Vgsmeasurements shall be started with the polarity used in the preceding high temperature stress. NOTE Reporting of correlation data is required if the stress temperature deviates from 250 C by more than 10 C. 8.2 Voltage sweep The device temperature is 250 C. The start/stop values of the gate bias are calculated from the oxide thickness, so that the maximum
