1、TECHNICAL REPORT IECTR 62014-3 First edition 2002-12 Electronic design automation libraries Part 3: Models of integrated circuits for EMI behavioural simulation Reference number IEC/TR 62014-3:2002(E)Publication numbering As from 1 January 1997 all IEC publications are issued with a designation in t
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8、 IEC TR 62014-3 First edition 2002-12 Electronic design automation libraries Part 3: Models of integrated circuits for EMI behavioural simulation PRICE CODE IEC 2002 Copyright - all rights reserved No part of this publication may be reproduced or utilized in any form or by any means, electronic or m
9、echanical, including photocopying and microfilm, without permission in writing from the publisher. International Electrotechnical Commission, 3, rue de Varemb, PO Box 131, CH-1211 Geneva 20, Switzerland Telephone: +41 22 919 02 11 Telefax: +41 22 919 03 00 E-mail: inmailiec.ch Web: www.iec.ch G For
10、price, see current catalogue Commission Electrotechnique Internationale International Electrotechnical Commission 2 TR 62014-3 IEC:2002(E) CONTENTS FOREWORD 3 1 Scope 5 1.1 General 5 1.2 Philosophy 6 2 Normative references. 7 3 Definitions . 7 4 ICEM models description . 8 4.1 ICEM power-supply line
11、 model 8 4.2 ICEM Input/output. 9 4.3 ICEM direct radiation .10 5 ICEM models parts details 11 5.1 Passive parts parameters 11 5.2 The current sources I band I i/o .12 Annex A Simulation tools implementation.14 Figure 1 Mechanisms for parasitic emission covered by ICEM. 5 Figure 2 The basic mechanis
12、m for parasitic emission is due to the current driving by all the gates. 6 Figure 3 Number of switching gates versus time 6 Figure 4 Model of the IC supply lines 8 Figure 5 Origin of primary and secondary resonance in the IC model 9 Figure 6 Comparison between simulation and measurements (IEC 61967-
13、4, 1 method) . 9 Figure 7 Coupling between core and I/Os.10 Figure 8 Coupling between core and I/Os in the case of separate supplies.10 Figure 9 IC direct emissions measured in TEM cell 11 Figure 10 Current source definition as a PWL description versus time13 Table 1 Value range of the model paramet
14、ers 12TR 62014-3 IEC:2002(E) 3 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ ELECTRONIC DESIGN AUTOMATION LIBRARIES Part 3: Models of integrated circuits for EMI behavioural simulation FOREWORD 1) The IEC (International Electrotechnical Commission) is a worldwide organization for standardization compr
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22、hnical committee may propose the publication of a technical report when it has collected data of a different kind from that which is normally published as an International Standard, for example “state of the art”. IEC 62014-3, which is a technical report, has been prepared by IEC technical committee
23、 93: Design automation. The text of this technical report is based on the following documents: Enquiry draft Report on voting 93/146/DTR 93/157/RVC Full information on the voting for the approval of this technical report can be found in the report on voting indicated in the above table. This publica
24、tion has been drafted in accordance with the ISO/IEC Directives, Part 2. 4 TR 62014-3 IEC:2002(E) The committee has decided that the contents of this publication will remain unchanged until 2005. At this date, the publication will be reconfirmed; withdrawn; replaced by a revised edition, or amended.
25、TR 62014-3 IEC:2002(E) 5 ELECTRONIC DESIGN AUTOMATION LIBRARIES Part 3: Models of integrated circuits for EMI behavioural simulation 1 Scope The objective of this Technical Report (TR) ICEM (Integrated Circuit Electrical Model) for Components is to propose electrical modelling for integrated circuit
26、 internal activities. This model will be used to evaluate electromagnetic behaviour and performances of electronic equipment. 1.1 General Integrated circuits integrate more and more gates on silicon and the technologies are faster and faster. To predict the electromagnetic behaviour of equipment, it
27、 is required to model IC interface switching and their internal activities as well. Indeed IBIS and IMIC models are focused mainly on interface activity predictions (cross-talk, overshoot, etc.). See IEC 62014-1. This report describes a model for EMI simulation due to IC internal activities. This mo
28、del gives more accurately the electromagnetic emissions of electronic equipment by taking into account the influence of internal activities. This model gives general data which could be implemented in different format such as IBIS, IMIC, SPICE, etc. During the design stage of the application that wi
29、ll exploit the IC, it becomes useful to predict and to prevent electromagnetic risks with the CAD tool. Accurate IC modelling is necessary to run on these simulation tools. Three coupling mechanisms of the internal activities for emission (Figure 1) are proposed in the ICEM model: ! conducted emissi
30、ons through supply lines; ! conducted emissions through input/output lines; ! direct radiated emissions. Internal activities noise Coupling by power lines alimentations Coupling by input/output Direct radiation Figure 1 Mechanisms for parasitic emission covered by ICEM IEC 3027/02 6 TR 62014-3 IEC:2
31、002(E) This report proposes a model that addresses those three types of coupling in a single approach. The elements of the model would be kept as simple as possible to ease the identification and simulation process. 1.2 Philosophy The purpose of this report is to provide data to enable printed-circu
32、it-board level (PCB) electromagnetic tools to compute the electromagnetic fields produced by integrated circuits and their associated PCB. These data can be extracted from measurement methods, as described in IEC 61967, or obtained from IC simulation tools. 1.2.1 Origin of parasitic emission The ori
33、gin of parasitic emission in IC is due to the current flowing through all the IC gates (Iv and Iv) during high to low or low to high transitions as shown in Figure 2. IV dd1 IV ddN IV ss1 IV ssN N gates IC Gate 1 Gate N IV dd IV ss Figure 2 The basic mechanism for parasitic emission is due to the cu
34、rrent driving by all the gates The combination of several hundred thousands of gates lead to very important peaks of current, mainly at rise and fall edges of the clock circuit. For example Figure 3 plots the number of gates switching versus the time for an IC integrating 1 000 000 transistors. Cons
35、equently, high current spikes are created inside the die and induce voltage drops of the internal voltage references. 0 200 400 600 800 1 000 1 200 0 20 40 60 80 100 120 140 Time ns Number of simultaneous switching gates Figure 3 Number of switching gates versus time IEC 3028/02 IEC 3029/02TR 62014-
36、3 IEC:2002(E) 7 1.2.2 Conducted emission through power-supply lines The current spikes created inside the die are partially reduced thanks to the on-chip decoupling capacitance. Anyhow, a significant portion of the current spikes is present at the power-supply pins of the chip. This current could be
37、 measured according to IEC 61967 or other methods permitting to have the power-supply currents. 1.2.3 Conducted emissions through input/output lines (I/O) The internal voltage drops generated by the current spikes create noise on the I/Os through direct connection, parasitic capacitive and inductive
38、 couplings and/or through common impedance. The PCB wires connected to the I/O can act as antennas and propagate electromagnetic emissions. The measurement set-up is done according to IEC 61967. 1.2.4 Direct radiated emissions The internal current flowing in low impedance loops generates electromagn
39、etic fields which can be measured in near field according to IEC 61967. 2 Normative references The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced
40、 document (including any amendments) applies. IEC 61967-1, Integrated circuits Measurement of electromagnetic emissions, 150 KHz to 1 GHz Part 1: General conditions and definitions IEC 61967-4, Integrated circuits Measurement of electromagnetic emissions, 150 kHz to 1 GHz Part 4: Measurement of cond
41、ucted emissions, 1 / 150 direct coupling method IEC 61967-6, Integrated circuits Measurement of electromagnetic emissions, 150 kHz to 1 GHz Part 6: Measurement of conducted emissions Magnetic probe method IEC 62014-1, Electronic design automation libraries Part 1: Input/output buffer information spe
42、cifications (IBIS version 3.2) 3 Terms and definitions For the purposes of this document,the following terms and definitions apply. 3.1 ElectroMagnetic Compatibility EMC ability of an equipment or system to function satisfactorily in its electromagnetic environment without introducing intolerable el
43、ectromagnetic disturbance to anything in that environment 3.2 electromagnetic emission phenomenon by which electromagnetic energy emanates from a source 3.3 electromagnetic radiation a) the phenomena by which energy in the form of electromagnetic waves propagates from a source into space b) energy t
44、ransferred through space in the form of electromagnetic waves 8 TR 62014-3 IEC:2002(E) 4 ICEM models description The proposed model includes 3 sections which describe the 3 coupling mechanisms of the internal activities for emission introduced in Part 1: ! ICEM power-supply line model for conducted
45、emissions through supply lines; ! ICEM input/output for conducted emissions through input/output lines; ! ICEM direct radiation for direct radiated emissions. Models are defined with electrical schematics described below for each IC pin. 4.1 ICEM power-supply line model The IC equivalent model shown
46、 in Figure 4 is able to determine the peak harmonics spectrum and main resonances. This model consists of: I bcurrent generator, LpackV ddpackage inductance of the positive supply V dd , LpackV sspackage inductance of the ground V ss , RpackV ddpackage resistor of the positive supply V dd , RpackV s
47、spackage resistor of the ground V ss , C dparasitic capacitor between V ddand V sspackage pins, Rv dd , series resistor of V dd , bonding and die connection, Rv ss , series resistor of V ss , bonding and die connection, Lv dd , inductance of V dd , bonding and die connection, Lv ss , inductance of V
48、 ss , bonding and die connection, C binternal die capacitor. I b Rv dd V DDof the IC V SSof the IC C d Lv dd Rv ss Lv ss C b RPackV dd RPackV ss LPackV ss LPackV dd Figure 4 Model of the IC supply lines 4.1.1 First and second order effects The inductance of the package LpackV dd , LpackV ss , in ser
49、ies with the capacitance C dcreate a first resonance, while the serial inductances Lv dd , Lv ss , in series with the local block capacitance C bcreate a second resonance (Figure 5). IEC 3030/02TR 62014-3 IEC:2002(E) 9 I b Rv dd C d Lv dd Rv ss Lv ss C b (R, L) PackV dd (R, L) PackV ss External V DD External V SS IC model Package model First resonance Second resonance Figure 5 Origin of primary and secondary
