1、 IEC 62132-2Edition 1.0 2010-03INTERNATIONAL STANDARD NORME INTERNATIONALEIntegrated circuits Measurement of electromagnetic immunity Part 2: Measurement of radiated immunity TEM cell and wideband TEM cell method Circuits intgrs Mesure de limmunit electromagntique Partie 2: Mesure de limmunit rayonn
2、e Mthode de cellule TEM et cellule TEM large bande IEC62132-2:2010 THIS PUBLICATION IS COPYRIGHT PROTECTED Copyright 2010 IEC, Geneva, Switzerland All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in any form or by any means, electronic or mec
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16、ation ou si vous avez des questions, visitez le FAQ du Service clients ou contactez-nous: Email: csciec.ch Tl.: +41 22 919 02 11 Fax: +41 22 919 03 00 IEC 62132-2Edition 1.0 2010-03INTERNATIONAL STANDARD NORME INTERNATIONALEIntegrated circuits Measurement of electromagnetic immunity Part 2: Measurem
17、ent of radiated immunity TEM cell and wideband TEM cell method Circuits intgrs Mesure de limmunit electromagntique Partie 2: Mesure de limmunit rayonne Mthode de cellule TEM et cellule TEM large bande INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE TICS 31.200 PR
18、ICE CODECODE PRIXISBN 2-8318-1087-2 Registered trademark of the International Electrotechnical Commission Marque dpose de la Commission Electrotechnique Internationale 2 62132-2 IEC:2010 CONTENTS FOREWORD.3 1 Scope.5 2 Normative references .5 3 Terms and definitions .5 4 General 6 5 Test conditions
19、.7 6 Test equipment.7 6.1 General .7 6.2 Cables.7 6.3 RF disturbance source 7 6.4 TEM cell8 6.5 Gigahertz TEM cell8 6.6 50- termination .8 6.7 DUT monitor8 7 Test set-up .8 7.1 General .8 7.2 Test set-up details.8 7.3 EMC test board .10 8 Test procedure .10 8.1 General .10 8.2 Immunity measurement .
20、10 8.2.1 General .10 8.2.2 RF disturbance signals 10 8.2.3 Test frequencies11 8.2.4 Test levels and dwell time .11 8.2.5 DUT monitoring .11 8.2.6 Detail procedure 11 9 Test report12 Annex A (normative) Field strength characterization procedure13 Annex B (informative) TEM CELL and wideband TEM cell d
21、escriptions21 Bibliography22 Figure 1 TEM and GTEM cell cross-section .9 Figure 2 TEM cell test set-up .9 Figure 3 GTEM cell test set-up.10 Figure 4 Immunity measurement procedure flowchart 12 Figure A.1 E-field characterization test fixture14 Figure A.2 The electric field to voltage transfer functi
22、on.16 Figure A.3 H-field characterization test fixture19 Figure A.4 The magnetic field to voltage transfer function20 62132-2 IEC:2010 3 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ INTEGRATED CIRCUITS MEASUREMENT OF ELECTROMAGNETIC IMMUNITY Part 2: Measurement of radiated immunity TEM cell and wideb
23、and TEM cell method FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions concerning st
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32、ng out of the publication, use of, or reliance upon, this IEC Publication or any other IEC Publications. 8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is indispensable for the correct application of this publication. 9) Attention is d
33、rawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. International Standard IEC 62132-2 has been prepared by subcommittee 47A: Integrated circuits, of IEC techni
34、cal committee 47: Semiconductor devices. The text of this standard is based on the following documents: FDIS Report on voting 47A/838/FDIS 47A/843/RVDFull information on the voting for the approval of this standard can be found in the report on voting indicated in the above table. This publication h
35、as been drafted in accordance with the ISO/IEC Directives, Part 2. This part of IEC 62132 is to be read in conjunction with IEC 62132-1. 4 62132-2 IEC:2010 The committee has decided that the contents of this publication will remain unchanged until the stability date indicated on the IEC web site und
36、er “http:/webstore.iec.ch“ in the data related to the specific publication. At this date, the publication will be reconfirmed, withdrawn, replaced by a revised edition, or amended. Future standards in this series will carry the new general title as cited above. Titles of existing standards in this s
37、eries will be updated at the time of the next edition. 62132-2 IEC:2010 5 INTEGRATED CIRCUITS MEASUREMENT OF ELECTROMAGNETIC IMMUNITY Part 2: Measurement of radiated immunity TEM cell and wideband TEM cell method 1 Scope This International Standard specifies a method for measuring the immunity of an
38、 integrated circuit (IC) to radio frequency (RF) radiated electromagnetic disturbances. The frequency range of this method is from 150 kHz to 1 GHz, or as limited by the characteristics of the TEM cell. 2 Normative references The following referenced documents are indispensable for the application o
39、f this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 60050-131:2002, International Electrotechnical Vocabulary (IEV) Part 131: Circuit theory IEC 60050-161:1990, Internatio
40、nal Electrotechnical Vocabulary (IEV) Chapter 161: Electromagnetic compatibility IEC 61967-2, Integrated circuits Measurement of electromagnetic emissions, 150 kHz to 1 GHz Part 2: Measurement of radiated emissions TEM cell and wideband TEM cell method IEC 62132-1:2006, Integrated circuits Measureme
41、nt of electromagnetic immunity, 150 kHz to 1 GHz Part 1: General conditions and definitions 3 Terms and definitions For the purpose of this document, the definitions in IEC 62132-1, IEC 60050-131 and IEC 60050-161, as well as the following, apply. 3.1 transverse electromagnetic mode (TEM) waveguide
42、mode in which the components of the electric and magnetic fields in the propagation direction are much less than the primary field components across any transverse cross-section 3.2 TEM waveguide open or closed transmission line system, in which a wave is propagating in the transverse electromagneti
43、c mode to produce a specified field for testing purposes. 6 62132-2 IEC:2010 3.3 TEM cell enclosed TEM waveguide, often a rectangular coaxial line, in which a wave is propagated in the transverse electromagnetic mode to produce a specified field for testing purposes. The outer conductor completely e
44、ncloses the inner conductor 3.4 two-port TEM waveguide TEM waveguide with input/output measurement ports at both ends 3.5 one-port TEM waveguide TEM waveguide with a single input/output measurement port NOTE Such TEM waveguides typically feature a broadband line termination at the non-measurement-po
45、rt end. 3.6 characteristic impedance for any constant phase wave-front, the magnitude of the ratio of the voltage between the inner conductor and the outer conductor to the current on either conductor NOTE The characteristic impedance is independent of the voltage/current magnitudes and depends only
46、 on the cross-sectional geometry of the transmission line. TEM waveguides are typically designed to have a 50 characteristic impedance. TEM waveguides with a 100 characteristic impedance are often used for transient testing. 3.7 anechoic material material that exhibits the property of absorbing, or
47、otherwise reducing, the level of electromagnetic energy reflected from that material 3.8 broadband line termination termination which combines a low-frequency discrete-component load, to match the characteristic impedance of the TEM waveguides (typically 50 ), and a high-frequency anechoic-material
48、volume 3.9 primary (field) component electric field component aligned with the intended test polarization NOTE For example, in conventional two-port TEM cells, the septum is parallel to the horizontal floor, and the primary mode electric field vector is vertical at the transverse centre of the TEM c
49、ell. 3.10 secondary (field) component in a Cartesian coordinate system, either of the two electric field components orthogonal to the primary field component and orthogonal to each other 4 General The IC to be evaluated for EMC performance is referred to as the device under test (DUT). The DUT shall be mounted on a printed circuit board (PCB), referred to
