ANS 8 5-1996 Use of borosilicate-glass Raschig rings as a neutron absorber in solutions of fissile material《裂变材料溶液中使用硼硅玻璃拉希环作中子吸收剂》.pdf

上传人:ownview251 文档编号:1243046 上传时间:2019-08-27 格式:PDF 页数:20 大小:967.52KB
下载 相关 举报
ANS 8 5-1996 Use of borosilicate-glass Raschig rings as a neutron absorber in solutions of fissile material《裂变材料溶液中使用硼硅玻璃拉希环作中子吸收剂》.pdf_第1页
第1页 / 共20页
ANS 8 5-1996 Use of borosilicate-glass Raschig rings as a neutron absorber in solutions of fissile material《裂变材料溶液中使用硼硅玻璃拉希环作中子吸收剂》.pdf_第2页
第2页 / 共20页
ANS 8 5-1996 Use of borosilicate-glass Raschig rings as a neutron absorber in solutions of fissile material《裂变材料溶液中使用硼硅玻璃拉希环作中子吸收剂》.pdf_第3页
第3页 / 共20页
ANS 8 5-1996 Use of borosilicate-glass Raschig rings as a neutron absorber in solutions of fissile material《裂变材料溶液中使用硼硅玻璃拉希环作中子吸收剂》.pdf_第4页
第4页 / 共20页
ANS 8 5-1996 Use of borosilicate-glass Raschig rings as a neutron absorber in solutions of fissile material《裂变材料溶液中使用硼硅玻璃拉希环作中子吸收剂》.pdf_第5页
第5页 / 共20页
点击查看更多>>
资源描述

1、REAFFIRMED February 23, 2013 ANSI/ANS-8.5-1996 (R2012) REAFFIRMED March 6, 2002 ANSI/ANS-8.5-1996 (R2002) REAFFIRMED May 14, 2007 ANSI/ANS-8.5-1996 (R2007) This standard has been reviewed and reaffirmed with the recognition that it may reference other standards and documents that may have been super

2、seded or withdrawn. The requirements of this document will be met by using the version of the standards and documents referenced herein. It is the responsibility of the user to review each of the references and to determine whether the use of the original references or more recent versions is approp

3、riate for the facility. Variations from the standards and documents referenced in this standard should be evaluated and documented. This standard does not necessarily reflect recent industry initiatives for risk informed decision-making or a graded approach to quality assurance. Users should consider the use of these industry initiatives in the application of this standard.

展开阅读全文
相关资源
猜你喜欢
  • DLA SMD-5962-95605-1995 MICROCIRCUIT LINEAR 28 VOLT SOLID STATE POWER CONTROLLER HYBRID《28伏特固态混合功率控制器线型微电路》.pdf DLA SMD-5962-95605-1995 MICROCIRCUIT LINEAR 28 VOLT SOLID STATE POWER CONTROLLER HYBRID《28伏特固态混合功率控制器线型微电路》.pdf
  • DLA SMD-5962-95606 REV B-2013 MICROCIRCUIT DIGITAL ADVANCED BIPOLAR CMOS OCTAL TRANSCEIVER LINE DRIVER WITH 25 O SERIES RESISTOR AND THREESTATE OUTPUTS TTL COMPATIBLE INPUTS MONOLI.pdf DLA SMD-5962-95606 REV B-2013 MICROCIRCUIT DIGITAL ADVANCED BIPOLAR CMOS OCTAL TRANSCEIVER LINE DRIVER WITH 25 O SERIES RESISTOR AND THREESTATE OUTPUTS TTL COMPATIBLE INPUTS MONOLI.pdf
  • DLA SMD-5962-95607 REV B-2006 MICROCIRCUIT HYBRID LINEAR 5 VOLT SINGLE OUTPUT WITH INTEGRAL EMI FILTER DC DC CONVERTER《5伏特混合单输出量和完整过滤器直流和交流电转换器线型微电路》.pdf DLA SMD-5962-95607 REV B-2006 MICROCIRCUIT HYBRID LINEAR 5 VOLT SINGLE OUTPUT WITH INTEGRAL EMI FILTER DC DC CONVERTER《5伏特混合单输出量和完整过滤器直流和交流电转换器线型微电路》.pdf
  • DLA SMD-5962-95608 REV B-2006 MICROCIRCUIT MEMORY DIGITAL 1K X 36 DUAL PORT CLOCKED FIFO MONOLITHIC SILICON《数字的1K X 36双重通信口时钟先入先出硅单片电路线型微电路》.pdf DLA SMD-5962-95608 REV B-2006 MICROCIRCUIT MEMORY DIGITAL 1K X 36 DUAL PORT CLOCKED FIFO MONOLITHIC SILICON《数字的1K X 36双重通信口时钟先入先出硅单片电路线型微电路》.pdf
  • DLA SMD-5962-95610 REV A-1996 MICROCIRCUIT MEMORY DIGITAL CMOS PROGRAMMABLE LOGIC CELL ARRAY MONOLITHIC SILICON《数字的互补金属氧化物半导体 可编程逻辑电池陈列硅单片电路线型微电路》.pdf DLA SMD-5962-95610 REV A-1996 MICROCIRCUIT MEMORY DIGITAL CMOS PROGRAMMABLE LOGIC CELL ARRAY MONOLITHIC SILICON《数字的互补金属氧化物半导体 可编程逻辑电池陈列硅单片电路线型微电路》.pdf
  • DLA SMD-5962-95611 REV A-1996 MICROCIRCUIT MEMORY DIGITAL CMOS PROGRAMMABLE LOGIC CELL ARRAY MONOLITHIC SILICON《数字的互补金属氧化物半导体 可编程逻辑电池陈列硅单片电路线型微电路》.pdf DLA SMD-5962-95611 REV A-1996 MICROCIRCUIT MEMORY DIGITAL CMOS PROGRAMMABLE LOGIC CELL ARRAY MONOLITHIC SILICON《数字的互补金属氧化物半导体 可编程逻辑电池陈列硅单片电路线型微电路》.pdf
  • DLA SMD-5962-95612 REV A-1996 MICROCIRCUIT MEMORY DIGITAL CMOS PROGRAMMABLE LOGIC CELL ARRAY MONOLITHIC SILICON《数字的互补金属氧化物半导体 可编程逻辑电池陈列硅单片电路线型微电路》.pdf DLA SMD-5962-95612 REV A-1996 MICROCIRCUIT MEMORY DIGITAL CMOS PROGRAMMABLE LOGIC CELL ARRAY MONOLITHIC SILICON《数字的互补金属氧化物半导体 可编程逻辑电池陈列硅单片电路线型微电路》.pdf
  • DLA SMD-5962-95613 REV K-2012 MICROCIRCUIT MEMORY DIGITAL SRAM 512K x 8-BIT MONOLITHIC SILICON.pdf DLA SMD-5962-95613 REV K-2012 MICROCIRCUIT MEMORY DIGITAL SRAM 512K x 8-BIT MONOLITHIC SILICON.pdf
  • DLA SMD-5962-95614 REV A-2008 MICROCIRCUIT DIGITAL ADVANCED BIPOLAR CMOS SCAN TEST DEVICE WITH 18-BIT BUS TRANSCEIVER THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高.pdf DLA SMD-5962-95614 REV A-2008 MICROCIRCUIT DIGITAL ADVANCED BIPOLAR CMOS SCAN TEST DEVICE WITH 18-BIT BUS TRANSCEIVER THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高.pdf
  • 相关搜索

    当前位置:首页 > 标准规范 > 国际标准 > 其他

    copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
    备案/许可证编号:苏ICP备17064731号-1