1、BSI Standards Publication Nanomanufacturing Key control characteristics Part 5-1: Thin-film organic/nano electronic devices Carrier transport measurements PD IEC/TS 62607-5-1:2014National foreword This Published Document is the UK implementation of IEC/TS 62607-5-1:2014. The UK participation in its
2、preparation was entrusted to Technical Committee NTI/1, Nanotechnologies. A list of organizations represented on this committee can be obtained on request to its secretary. This publication does not purport to include all the necessary provisions of a contract. Users are responsible for its correct
3、application. The British Standards Institution 2014. Published by BSI Standards Limited 2014 ISBN 978 0 580 82584 2 ICS 07.030 Compliance with a British Standard cannot confer immunity from legal obligations. This Published Document was published under the authority of the Standards Policy and Strat
4、egy Committee on 31 December 2014. Amendments issued since publication Date Text affected PUBLISHED DOCUMENT PD IEC/TS 62607-5-1:2014 IEC TS 62607-5-1 Edition 1.0 2014-09 TECHNICAL SPECIFICATION Nanomanufacturing Key control characteristics Part 5-1: Thin-film organic/nano electronic devices Carrier
5、 transport measurements INTERNATIONAL ELECTROTECHNICAL COMMISSION P ICS 07.030 PRICE CODE ISBN 978-2-8322-1812-9 Registered trademark of the International Electrotechnical Commission Warning! Make sure that you obtained this publication from an authorized distributor. colour inside PD IEC/TS 62607-5
6、-1:2014 2 IEC TS 62607-5-1:2014 IEC 2014 CONTENTS FOREWORD . 3 INTRODUCTION . 5 1 Scope 6 2 Normative references 6 3 Terms, definitions and abbreviations 6 3.1 Terms and definitions 6 3.2 Symbols and abbreviated terms 7 4 Sample structures of OTFTs 8 4.1 Typical device structures of OTFTs . 8 4.2 Co
7、ntact-area-limited doping in OTFTs . 8 5 Appropriate data format . 9 Annex A (informative) Experimental studies on contact-area-limited doping in OTFTs 11 A.1 Contact-area-limited doping in bottom-gate, top-contact OTFTs 11 A.2 Contact-area-limited doping in bottom-gate, bottom-contact OTFTs 13 Bibl
8、iography 15 Figure 1 Typical device structures of OTFTs 8 Figure 2 Contact-area-limited doping in OTFTs 9 Figure 3 Summary of this Technical Specification 9 Figure A.1 Sample preparation of bottom-gate, top-contact (BGTC) pentacene OTFTs using contact-area-limited doping 12 Figure A.2 Contact-area-l
9、imited doping effect in bottom-gate, top-contact (BGTC) pentacene OTFTs . 12 Figure A.3 Sample preparation of bottom-gate, bottom-contact (BGBC) p-channel OTFTs using contact-area-limited doping 13 Figure A.4 Contact-area-limited doping effect in bottom-gate, bottom-contact (BGBC) pentacene OTFTs 14
10、 Figure A.5 Contact-area-limited doping effect in bottom-gate, bottom-contact (BGBC) oligothiophene OTFTs . 14 Table 1 Possible data format to be given together with carrier transport properties of OTFTs 10 PD IEC/TS 62607-5-1:2014IEC TS 62607-5-1:2014 IEC 2014 3 INTERNATIONAL ELECTROTECHNICAL COMMI
11、SSION _ NANOMANUFACTURING KEY CONTROL CHARACTERISTICS Part 5-1: Thin-film organic/nano electronic devices Carrier transport measurements FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees
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24、hey can be transformed into International Standards. IEC TS 62607-5-1, which is a technical specification, has been prepared by IEC technical committee 113: Nanotechnology standardization for electrical and electronic products and systems. PD IEC/TS 62607-5-1:2014 4 IEC TS 62607-5-1:2014 IEC 2014 Th
25、e text of this technical specification is based on the following documents: Enquiry draft Report on voting 113/212/DTS 113/221/RVC Full information on the voting for the approval of this technical specification can be found in the report on voting indicated in the above table. This publication has b
26、een drafted in accordance with the ISO/IEC Directives, Part 2. A list of all parts in the IEC 62607 series, published under the general title Nanomanufacturing key control characteristics, can be found on the IEC website. The committee has decided that the contents of this publication will remain un
27、changed until the stability date indicated on the IEC web site under “http:/webstore.iec.ch“ in the data related to the specific publication. At this date, the publication will be transformed into an International standard, reconfirmed, withdrawn, replaced by a revised edition, or amended. IMPORTANT
28、 The colour inside logo on the cover page of this publication indicates that it contains colours which are considered to be useful for the correct understanding of its contents. Users should therefore print this document using a colour printer. A bilingual version of this publication may be issued a
29、t a later date. PD IEC/TS 62607-5-1:2014IEC TS 62607-5-1:2014 IEC 2014 5 INTRODUCTION Organic/nano thin-film devices have many attractive features such as being light-weight and flexible, and having a low-cost, low-temperature fabrication process. Organic/nano electronic devices have been widely res
30、earched by academic institutions, research institutes, and materials and device industries. One of their possible applications is therefore expected to be in flexible and rollable devices. Many thin-film transistors based on organic semiconductor materials, called organic thin-film transistors (OTFT
31、s), are expected to be mounted on organic electroluminescence display to drive each organic light-emitting diode pixel circuit. These OTFTs are also promising candidates for molecular nanoelectronics. OTFTs show a relatively smaller carrier mobility (thin-film mobility: at most 10 cm 2 /Vs, but usua
32、lly less than 1 cm 2 /Vs) compared with other thin-film transistors based on inorganic semiconductors (silicon, III-V compounds, metal oxides). Carrier transport properties such as thin-film mobility and thin-film carrier concentration in OTFTs are usually measured by simply applying the device phys
33、ics of silicon metal-oxide-semiconductor transistors to OTFTs. Both the intrinsic bulk mobility of organic semiconductors and extrinsic effects such as contact resistance, carrier trap, interface, and surface state can limit thin-film mobility in OTFTs. Therefore, reliable methods of evaluating carr
34、ier transport properties for nanometer-scale thin-film materials have not yet been established and urgently need to be developed. PD IEC/TS 62607-5-1:2014 6 IEC TS 62607-5-1:2014 IEC 2014 NANOMANUFACTURING KEY CONTROL CHARACTERISTICS Part 5-1: Thin-film organic/nano electronic devices Carrier transp
35、ort measurements 1 Scope This part of IEC 62607, which is a Technical Specification, provides a standardized sample structure for characterizing charge transport properties in thin-film organic/nano electronic devices and a format to report details of the structure which shall be provided with the m
36、easurement results. The standardized OTFT testing structure with a contact-area-limited doping can mitigate contact resistance and enable reliable measurement of the charge carrier mobility. The purpose of this Technical Specification is to provide test sample structures for determining the intrinsi
37、c charge transport properties of organic thin-film devices. The intention is to provide reliable materials information for OTFTs and to set guidelines for making test sample structures so that materials information is clear and consistent throughout the research community and industry. 2 Normative r
38、eferences The following documents, in whole or in part, are normatively referenced in this document and are indispensable for its application. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applie
39、s. IEC 60050 (all parts), International Electrotechnical Vocabulary (available at http:/www.electropedia.org/) IEC 62860, Test methods for the characterization of organic transistors and materials 3 Terms, definitions and abbreviations For the purposes of this document, the terms and definitions giv
40、en in IEC 60050-521 as well as the following apply. 3.1 Terms and definitions 3.1.1 organic thin-film transistor OTFT field-effect transistor that has a conduction channel made of thin films consisting of organic compounds 3.1.2 thin-film mobility charge carrier mobility of the conduction channel (t
41、he semiconductor layer) in an OTFT 3.1.3 contact-area-limited doping doping at around interface regions between the source and drain electrodes and the conduction channel in an OTFT PD IEC/TS 62607-5-1:2014IEC TS 62607-5-1:2014 IEC 2014 7 3.1.4 channel resistance electrical resistance which comes fr
42、om the conduction channel induced by applying gate voltages in a field-effect transistor 3.1.5 contact resistance electrical resistance obtained by subtracting the channel resistance from the total electrical resistance between the source and drain electrodes in a field-effect transistor Note 1 to e
43、ntry: Main components of the contact resistance are electrical leads and carrier injection barriers at the interface between the source electrode and the semiconductor layer. 3.1.6 bottom-gate, bottom-contact device field-effect transistor with the following structures: the gate electrode is located
44、 between the gate dielectric and the substrate; the source and drain electrodes are located directly on top of the substrate, and adjacent to the conduction channel-gate dielectric interface 3.1.7 bottom-gate, top-contact device field-effect transistor with the following structures: the gate electro
45、de is located between the gate dielectric and the substrate; the source and drain electrodes are located on top of the semiconductor layer 3.1.8 top-gate, bottom-contact device field-effect transistor with the following structures: the gate electrode is located farthest away from the substrate; the
46、gate dielectric is located between the gate electrode and the semiconductor layer; the source and drain electrodes are located directly on top of the substrate, and adjacent to the conduction channel-gate dielectric interface 3.1.9 top-gate, top-contact device field-effect transistor with the follow
47、ing structures: the gate electrode is located farthest away from the substrate; the gate dielectric is located between the gate electrode and the semiconductor layer; the source and drain electrodes are located on top of the semiconductor layer 3.2 Symbols and abbreviated terms OTFT organic thin-fil
48、m transistor BGBC bottom-gate, bottom-contact BGTC bottom-gate, top-contact TGBC top-gate, bottom-contact TGTC top-gate, top-contact F4TCNQ 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane PD IEC/TS 62607-5-1:2014 8 IEC TS 62607-5-1:2014 IEC 2014 4 Sample structures of OTFTs 4.1 Typical device s
49、tructures of OTFTs Several different device structures on OTFTs are possible, depending on the position of the source-drain and gate electrodes. Figure 1 illustrates two typical device structures: a bottom- gate, top-contact (BGTC) structure and a bottom-gate, bottom-contact (BGBC) structure. BGTC devices usually show better performance in comparison with BGBC devices. In comparison, the BGBC structure is more suitable for high-density device integrati
