1、BSI Standards Publication WB11885_BSI_StandardCovs_2013_AW.indd 1 15/05/2013 15:06 Photovoltaic modules Bypass diode electrostatic discharge susceptibility testing PD IEC/TS 62916:2017 IEC TS 62916 Edition 1.0 2017-04 TECHNICAL SPECIFICATION Photovoltaic modules Bypass diode electrostatic discharge
2、susceptibility testing INTERNATIONAL ELECTROTECHNICAL COMMISSION ICS 27.160 ISBN 978-2-8322-4147-9 Registered trademark of the International Electrotechnical Commission Warning! Make sure that you obtained this publication from an authorized distributor. colour inside National foreword This Publishe
3、d Document is the UK implementation of IEC/TS 62916:2017. The UK participation in its preparation was entrusted to Technical Committee GEL/82, Photovoltaic Energy Systems. A list of organizations represented on this committee can be obtained on request to its secretary. This publication does not pur
4、port to include all the necessary provisions of a contract. Users are responsible for its correct application. The British Standards Institution 2017 Published by BSI Standards Limited 2017 ISBN 978 0 580 89679 8 ICS 27.160 Compliance with a British Standard cannot confer immunity from legal obligat
5、ions. This Published Document was published under the authority of the Standards Policy and Strategy Committee on 30 June 2017. Amendments/corrigenda issued since publicationDate Text affected PUBLISHED DOCUMENT PD IEC/TS 62916:2017 IEC TS 62916 Edition 1.0 2017-04 TECHNICAL SPECIFICATION Photovolta
6、ic modules Bypass diode electrostatic discharge susceptibility testing INTERNATIONAL ELECTROTECHNICAL COMMISSION ICS 27.160 ISBN 978-2-8322-4147-9 Registered trademark of the International Electrotechnical Commission Warning! Make sure that you obtained this publication from an authorized distributo
7、r. colour inside PD IEC/TS 62916:2017 2 IEC TS 62916:2017 IEC 2017 CONTENTS FOREWORD . 3 1 Scope 5 2 Normative references 5 3 Terms, definitions and abbreviated terms 5 4 General . 6 5 Sampling . 6 6 Test equipment 7 7 Test method 7 7.1 Preparation . 7 7.2 Surge testing 8 8 Data analysis . 8 8.1 Two
8、-parameter Weibull distribution for analyzing voltage to failure . 8 8.2 Recommended median rank estimation for the cumulative distribution 9 8.3 Recommended form for data analysis by least squares linear regression 9 9 Report . 10 Annex A (informative) Guidelines for application 11 Annex B (informa
9、tive) Example of application 12 Figure 1 Example of a test setup for bypass diodes . 7 Figure B.1 Chart of sample data 12 Table 1 Data organization for least squares regression 9 Table B.1 Example of data analysis . 12 PD IEC/TS 62916:2017IEC TS 62916:2017 IEC 2017 3 INTERNATIONAL ELECTROTECHNICAL C
10、OMMISSION _ PHOTOVOLTAIC MODULES BYPASS DIODE ELECTROSTATIC DISCHARGE SUSCEPTIBILITY TESTING FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IE
11、C is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports, Publicly Available Specifications (PAS)
12、 and Guides (hereafter referred to as “IEC Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with may participate in this preparatory work. International, governmental and non- governmental organizations liaising with
13、 the IEC also participate in this preparation. IEC collaborates closely with the International Organization for Standardization (ISO) in accordance with conditions determined by agreement between the two organizations. 2) The formal decisions or agreements of IEC on technical matters express, as nea
14、rly as possible, an international consensus of opinion on the relevant subjects since each technical committee has representation from all interested IEC National Committees. 3) IEC Publications have the form of recommendations for international use and are accepted by IEC National Committees in tha
15、t sense. While all reasonable efforts are made to ensure that the technical content of IEC Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any misinterpretation by any end user. 4) In order to promote international uniformity, IEC National Committee
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17、ny attestation of conformity. Independent certification bodies provide conformity assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any services carried out by independent certification bodies. 6) All users should ensure that they have the latest e
18、dition of this publication. 7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and members of its technical committees and IEC National Committees for any personal injury, property damage or other damage of any nature whatsoever, whether
19、direct or indirect, or for costs (including legal fees) and expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC Publications. 8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is indisp
20、ensable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. The main task of IEC technical com
21、mittees is to prepare International Standards. In exceptional circumstances, a technical committee may propose the publication of a technical specification when the required support cannot be obtained for the publication of an International Standard, despite repeated efforts, or the subject is still
22、 under technical development or where, for any other reason, there is the future but no immediate possibility of an agreement on an International Standard. Technical specifications are subject to review within three years of publication to decide whether they can be transformed into International St
23、andards. IEC TS 62916, which is a technical specification, has been prepared by IEC technical committee 82: Solar photovoltaic systems. PD IEC/TS 62916:2017 4 IEC TS 62916:2017 IEC 2017 The text of this technical specification is based on the following documents: Enquiry draft Report on voting 82/10
24、59/DTS 82/1259/RVDTS Full information on the voting for the approval of this technical specification can be found in the report on voting indicated in the above table. This document has been drafted in accordance with the ISO/IEC Directives, Part 2. The committee has decided that the contents of thi
25、s publication will remain unchanged until the stability date indicated on the IEC website under “http:/webstore.iec.ch“ in the data related to the specific publication. At this date, the publication will be transformed into an International standard, reconfirmed, withdrawn, replaced by a revised edi
26、tion, or amended. A bilingual version of this publication may be issued at a later date. IMPORTANT The colour inside logo on the cover page of this publication indicates that it contains colours which are considered to be useful for the correct understanding of its contents. Users should therefore p
27、rint this document using a colour printer. PD IEC/TS 62916:2017IEC TS 62916:2017 IEC 2017 5 PHOTOVOLTAIC MODULES BYPASS DIODE ELECTROSTATIC DISCHARGE SUSCEPTIBILITY TESTING 1 Scope This document describes a discrete component bypass diode electrostatic discharge (ESD) immunity test and data analysis
28、 method. The test method described subjects a bypass diode to a progressive ESD stress test and the analysis method provides a means for analyzing and extrapolating the resulting failures using the two-parameter Weibull distribution function. It is the object of this document to establish a common a
29、nd reproducible test method for determining diode surge voltage tolerance consistent with an ESD event during the manufacturing, packaging, transportation or installation processes of PV modules. This document does not purport to address causes of electrostatic discharge or to establish pass or fail
30、 levels for bypass diode devices. It is the responsibility of the user to assess the ESD exposure level for their particular circumstances. The data generated by this procedure may support qualification of new design types, quality control for incoming material, and/or identify the need for addition
31、al ESD controls in the manufacturing process. Finally, this document does not apply to large energy surge events such as direct or indirect lightning exposure, utility capacitor bank switching events, or the like. 2 Normative references The following documents are referred to in the text in such a w
32、ay that some or all of their content constitutes requirements of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 61000-4-2:2008, Electromagnetic compatibility (EMC) Part
33、 4-2: Testing and measurement techniques Electrostatic discharge immunity test 3 Terms, definitions and abbreviated terms For the purposes of this document, the terms and definitions of IEC TS 61836 and the following apply. ISO and IEC maintain terminological databases for use in standardization at
34、the following addresses: IEC Electropedia: available at http:/www.electropedia.org/ ISO Online browsing platform: available at http:/www.iso.org/obp 3.1 DUT device under test 3.2 contact discharge method method of testing in which the electrode of the test generator is kept in contact with the DUT a
35、nd the discharge is actuated by the discharge within the generator PD IEC/TS 62916:2017 6 IEC TS 62916:2017 IEC 2017 Note 1 to entry: In this document, the contact is to the electrical lead of the DUT with no intervening electrical insulation material. 3.3 diode check function usage of a multimeter
36、with diode function check to verify the diode is functional, short or open 3.4 direct application application of the test surge directly to the DUT Note 1 to entry: In this technical specification, the surges are directed to bypass diodes for photovoltaic applications outside of the actual photovolt
37、aic application (e.g., DUT are tested outside of the junction box and are not associated with the photovoltaic module itself when characterized). 3.5 surge relaxation time amount of time necessary for the DUT to thermally stabilize in the event that surge application creates localized regions of hea
38、t generation 4 General Production line quality excursions due to bypass diode failure have been observed in the PV module manufacturing process due to changes in the electrostatic discharge (ESD) susceptibility of bypass diodes. This document provides a method to evaluate the susceptibility of bypas
39、s diodes to fail due to ESD events that may occur in the production, transport or installation of photovoltaic (PV) modules. ESD events occur whenever there is contact, or sufficiently close proximity between objects of different electrostatic charge. The magnitude of the ESD event is a function of
40、the charge difference between the objects and the impedance associated with the charge transfer. Of specific interest in this document are relatively low energy, short-duration surges that may be associated with the manufacturing process, testing, or installation events where the bypass diodes are d
41、irectly exposed to an ESD event. Several standard ESD models exist for the evaluation of surge immunity. This document adopts the model provided by IEC 61000-4-2:2008 that provides a method for assessing damage to electrical and electronic equipment subjected to static electricity discharges from op
42、erators directly, and from personnel to adjacent objects. 5 Sampling Ten unconditioned diodes are required for this test. Several factors should be considered when making sample selection: Diode types shall be identical. Different diode types will not provide useful surge immunity information. Each
43、diode type that was tested during the development of this procedure yielded a different failure distribution indicating that mixed type testing would not be meaningful. Diode date codes and factory location should be identical. The best characterization of a diodes surge immunity will be obtained wh
44、en the diodes are from one manufacturing location and from a specific manufacturing batch. Comparison of the failure distributions that result from applying this procedure to several different date codes may provide the user with a qualitative understanding of the diode manufacturers quality control
45、 from a surge immunity perspective. Similarity of results from different date codes would indicate a tighter quality control method. Diodes are tested independently and outside of a module or junction box. The leads shall be in the form required before assembly into a junction box. PD IEC/TS 62916:2
46、017IEC TS 62916:2017 IEC 2017 7 Lead trimming or lead forming operations should be done before testing as these operations can create stress on the diode die that may have an impact on the diodes surge immunity. 6 Test equipment Test equipment shall conform to the requirements stated in IEC 61000-4-
47、2:2008, Clause 6 using the discharge electrode for contact discharges. The discharge return connection from the surge generator shall be connected to a grounding block designed to accommodate the DUT samples, taking into account spacing requirements that may be required for formed leads as shown in
48、Figure 1. Multiple DUT samples may be connected to a single grounding block. The equipment shall be capable of positive polarity surges (with respect to earth ground), conducted in a single-surge mode, and with a voltage that can be incremented in 5 kV steps from 5 kV to a recommended 30 kV or highe
49、r capability. Equipment having a surge voltage limitation that is less than 30 kV may be used, but this may limit DUT failure information and subsequent data analysis for a very surge-resistant DUT. Figure 1 Example of a test setup for bypass diodes 7 Test method 7.1 Preparation a) Place 10 unconditioned DUTs into an electrically grounded fixture such that the DUT anode is grounded and the cathode is exposed and accessible (Figure 1). b) Use a multimeter with diode-check f
