1、BRITISH STANDARD BS QC 790104:1992 IEC 748-2-4: 1992 Specification for Harmonized system of quality assessment for electronic components Semiconductor devices Integrated circuits Family specification Complementary MOS digital integrated circuits, series4000B and4000UBBSQC790104:1992 BSI 11-1999 ISBN
2、 0 580 35530 6 Amendments issued since publication Amd. No. Date CommentsBSQC790104:1992 BSI 11-1999 i Contents Page National foreword ii Introduction 1 1 Mechanical description 2 2 Short description 2 3 Categories of assessed quality 2 4 Limiting values 3 5 Electrical operating conditions and elect
3、rical characteristics 3 6 Marking 7 7 Ordering information 7 8 Test conditions and inspection requirements 7 9 Group D Qualification approval tests 11 10 Additional information 11 Table I 7 Table II 8 Table III 9BSQC790104:1992 ii BSI 11-1999 National foreword This British Standard has been prepared
4、 under the direction of the Electronic Components Standards Policy Committee, ECL/-. It is identical with IEC Publication748-2-4 (QC790104) “Semiconductor devices. Integrated circuits. Part2: Digital integrated circuits. Section4 Family specification for complementary MOS digital integrated circuits
5、, series4000B and4000UB” published by the International Electrotechnical Commission (IEC) and is a harmonized specification within the IECQ system of quality assessment for electronic components. This family specification is one of a series of blank detail specifications for semiconductor devices to
6、 be used with BS QC700000:1991 “Harmonized system of quality assessment for electronic components.Generic specification for discrete devices and integrated circuits” and BSQC790100:1991 “Harmonized system of quality assessment for electronic components.Semiconductor devices. Sectional specification
7、for semiconductor integrated circuits excluding hybrid circuits”. Cross-references International Standard a Corresponding British Standard IEC 68-2-17 BS 2011 Environmental testing Part2.1 Q:1981 Test Q. Sealing (Identical) IEC 191-2 BS 3934 Mechanical standardization of semiconductor devices. Part
8、2:1992 Schedule of international drawings giving dimensions (Identical) IEC 747-1 BS 6493 Semiconductor devices Part1 Discrete devices Section1.1:1984 General (Identical) IEC 747-10 BS QC 700000:1991 Harmonized system of quality assessment for electronic components.Generic specification for discrete
9、 devices and integrated circuits (Identical) IEC 748-2 BS 6493 Semiconductor devices Part 2 Integrated circuits Section2.2:1986 Recommendations for digital integrated circuits (Identical) IEC748-11 BS QC790100:1991 Harmonized system of quality assessment for electronic components. Semiconductor devi
10、ces.Sectional specification for semiconductor integrated circuits excluding hybrid circuits (Identical) IEC749 BS6493 Semiconductor devices Part3:1985 Mechanical and climatic test methods (Identical) QC001002 BS QC001002:1991 Rules of Procedure of the IEC Quality Assessment System for Electronic Com
11、ponents (IECQ) (Identical) a Undated in the text.BSQC790104:1992 BSI 11-1999 iii A British Standard does not purport to include all the necessary provisions of a contract. Users of British Standards are responsible for their correct application. Compliance with a British Standard does not of itself
12、confer immunity from legal obligations. Summary of pages This document comprises a front cover, an inside front cover, pagesi toiv, pages1to12 and a back cover. This standard has been updated (see copyright date) and may have had amendments incorporated. This will be indicated in the amendment table
13、 on the inside front cover.iv blankBSQC790104:1992 BSI 11-1999 1 Introduction The IEC Quality Assessment System for Electronic Components is operated in accordance with the statutes of the IEC and under the authority of the IEC. The object of this system is to define quality assessment procedures in
14、 such a manner that electronic components released by one participating country as conforming with the requirements of an applicable specification are equally acceptable in all other participating countries without the need for further testing. This family specification is one of a series of blank d
15、etail specifications for semiconductor devices and shall be used with the following IEC publications: 747-10/QC700000, Semiconductor devices. Part10: Generic specification for discrete devices and integrated circuits. 748-11/QC790100, Semiconductor devices. Integrated circuits. Part11: Sectional spe
16、cification for semiconductor integrated circuits excluding hybrid circuits. Required Information Numbers shown in brackets on this and the following pages correspond to the following items of required information, which should be entered in the spaces provided. Identification of the detail specifica
17、tion 1 The name of the National Standards Organization under whose authority the detail specification is issued. 2 The IECQ number of the detail specification. 3 The numbers and issue numbers of the generic and sectional specifications. 4 The national number of the detail specification, date of issu
18、e and any further information required by the national system. Identification of the component 5 Main function and type number. 6 Information on typical construction (materials, the main technology) and the package. If the device has several kinds of derivative products, those differences shall be i
19、ndicated, e.g.feature of characteristics in the comparison table. If the device is sensitive to electrostatic charges, a caution statement shall be added in the detail specification. 7 Outline drawing, terminal identification, marking and/or reference to the relevant document for outlines. 8 Categor
20、y of assessed quality according to subclause 2.6 of the generic specification. 9 Reference data. The clauses given in square brackets on the next pages of this standard, which form the front page of the detail specification, are intended for guidance to the specification writer and shall not be incl
21、uded in the detail specification. When confusion may arise as to whether a paragraph is only instruction to the writer or not, the paragraph shall be indicated between brackets.BSQC790104:1992 2 BSI 11-1999 Name (address) of responsible NAI (and possibly of body from which specification is available
22、). 1 Number of IECQ detail specification, plus issue number and/or date. QC790104. 2 ELECTRONIC COMPONENT OF ASSESSED QUALITY IN ACCORDANCE WITH: Generic specification: Publication747-10/QC700000 Sectional specification: Publication748-11/QC790100 and national references if different. 3 National num
23、ber of detail specification This box need not be used if the national number repeats the IECQ number. 4 FAMILY SPECIFICATION FOR COMPLEMENTARY MOS DIGITAL INTEGRATED CIRCUITS, SERIES4000B AND4000UB Ordering information: seeclause7 of this standard. 5 1 Mechanical description Outline references: IEC1
24、91-2 . mandatory if available and/or national if there is no IEC outline. Outline drawing: may be transferred to or given with more details in clause10 of this standard. 7 2 Short description Complementary MOS, series4000 B and4000UB. Semiconductor material: Si Encapsulation: cavity or non-cavity. C
25、AUTION: ELECTROSTATIC SENSITIVE DEVICES. 6 Terminal identification: drawing showing pin assignments, including graphical symbols. Marking: letters and figures, or colour code. The detail specification shall prescribe the information to be marked on the device, if any. Seesubclause 2.5 of generic spe
26、cification and/or clause6 of this standard. 3 Categories of assessed quality from subclause 2.6 of the generic specification. 8 Reference data Seedetail specification. 9 Information about manufacturers who have components qualified to this family specification is available in the current Qualified P
27、roducts List.BSQC790104:1992 BSI 11-1999 3 4 Limiting values (absolute maximum rating system) These values apply over the operating temperature range, unless otherwise specified. They are not for inspection purposes. The values given are valid unless otherwise specified in the detail specification.
28、NOTE 1Except for transients (seesubclause10.2 of this standard). 5 Electrical operating conditions and electrical characteristics (Seeclause8 of this standard for inspection requirements.) 5.1 Electrical operating conditions Recommended supply voltage range:3V to15V (to be tested at V DD =5V,10V and
29、15V). 5.2 Electrical characteristics These electrical characteristics apply over the operating temperature range, unless otherwise stated. All voltages are referenced to V SS . 5.2.1 Static characteristics NOTEA “minus” sign indicates that the direction of the current flow is out of the terminal. Su
30、bclause Parameters Symbol Value Unit min max. 4.1 4.2 4.3 4.4 4.5 Supply voltage Input voltage (seenote1) Input current (any one input) Operating temperature full limited Storage temperature V DD V I | I I | T amb T amb T stg 0,5 (seenote1) 0,5 55 40 65 18 V DD +0,5 10 12,5 85 150 V V mA C C CBSQC79
31、0104:1992 4 BSI 11-1999 Subclause Characteristics V DD (V) Symbol T amb min. +25 C T amb max. Unit Tested in sub-group min. max. min. max. min. max. 5.2.1.1 Quiescent device current V IL =0V, V IH = V DDfor all valid input combinations 5.2.1.1.1 For full operating temperature range: SSI gates buffer
32、s, flip-flops, other SSI 5 10 15 I DD 0,25 0,5 1 0,25 0,5 1 7,5 15 30 4A A3/A4 5 10 15 I DD 1 2 4 1 2 4 30 60 120 4A A3/A4 MSI 5 10 15 I DD 5 10 20 5 10 20 150 300 600 4A A3/A4 LSI 5 10 15 I DD 5 10 15 15 25 50 375 750 1500 4A A3/A4 5.2.1.1.2 For limited operating temperature range: SSI gates buffer
33、s, flip-flops, other SSI 5 10 15 I DD 1 2 4 1 2 4 7,5 15 30 4A A3/A4 5 10 15 I DD 4 8 16 4 8 16 30 60 120 4A A3 MSI 5 10 15 I DD 20 40 80 20 40 80 150 300 600 4A A3/A4 LSI 5 10 15 I DD 50 100 200 50 100 200 375 750 1500 4A A3/A4 5.2.1.2 Low-level output voltage V IL =0, V IH = V DD ,|I O |1 4A 5 10
34、15 V OL 0,05 0,05 0,05 0,05 0,05 0,05 0,05 0,05 0,05 V A3/A4 5.2.1.3 High-level output voltage V IL =0, V IH = V DD ,|I O |1 4A 5 10 15 V OH 4,95 9,95 14,95 4,95 9,95 14,95 4,95 9,95 14,95 V A3/A4 (The detail specification shall indicate whether the device is an SSI, MSI or LSI.) BSQC790104:1992 BSI
35、 11-1999 5 NOTE 2Unless otherwise specified in the detail specification. NOTE 3For devices with symmetrical outputs, the values for I OHare equal to those for I OL . Subclause Characteristics V DD (V) Symbol T amb min. +25 C T amb max. Unit Tested in sub-group min. max. min. max. min. max. 5.2.1.4 5
36、.2.1.4.1 Low-level and high-level output voltages at worst-case input conditions: B-series |I O |14A V IL =1,5V V IL =3,0V V IL =4,0V 5 10 15 V OL 0,5 1,0 1,5 0,5 1,0 1,5 0,5 1,0 1,5 V A3/A4 5.2.1.4.2 V IH =3,5V V IH =7,0V V IH =11,0V 5 10 15 V OH 4,5 9,0 13,5 4,5 9,0 13,5 4,5 9,0 13,5 V A3/A4 UB-se
37、ries |I O |14A V IL =1,0V V IL =2,0V V IL =2,5V 5 10 15 V OL 0,5 1,0 1,5 0,5 1,0 1,5 0,5 1,0 1,5 V A3/A4 V IH =4,0V V IH =8,0V V IH =12,5V 5 10 15 V OH 4,5 9,0 13,5 4,5 9,0 13,5 4,5 9,0 13,5 V A3/A4 5.2.1.5 5.2.1.5.1 Low-level output current (seenote3) V IL =0V, V IH = V DD For full operating temper
38、ature range: V O =0,4V V O =0,5V V O =1,5V 5 10 15 I OL 0,64 1,6 4,2 0,51 1,3 3,4 0,36 0,9 2,4 mA A3/A4 5.2.1.5.2 For limited operating temperature range: V O =0,4V V O =0,5V V O =1,5V 5 10 15 I OL 0,52 1,3 3,6 0,44 1,1 3,0 0,36 0,9 2,4 mA A3/A4BSQC790104:1992 6 BSI 11-1999 5.2.2 Dynamic characteris
39、tics Seeblank detail specification. Subclause Characteristics V DD (V) Symbol T amb min. +25 C T amb max. Unit Tested in sub-group min. max. min. max. min. max. 5.2.1.6 5.2.1.6.1 High-level output current (seenotes2 and3) V IL =0V, V IH = V DD For full operating temperature range: V O =4,6V V O =9,5
40、V V O =13,5V 5 10 15 I OH 0,25 0,62 1,8 0,2 0,5 1,5 0,14 0,35 1,1 mA A3/A4 5.2.1.6.2 For limited operating temperature range: V O =4,6V V O =9,5V V O =13,5V 5 10 15 I OH 0,2 0,5 1,4 0,16 0,4 1,2 0,12 0,3 1,0 mA A3/A4 5.2.1.7 5.2.1.7.1 Input current For full operating temperature range: V IH = V DD V
41、 IL =0 V 15 15 I IH I IL 0,1 0,1 0,1 0,1 1,0 1,0 4A 4A A3/A4 5.2.1.7.2 For limited operating temperature range: V IH = V DD V IL =0 V 15 15 I IH I IL 0,3 0,3 0,3 0,3 1,0 1,0 4A 4A A3/A4 5.2.1.8 5.2.1.8.1 Three-state output leakage current V IL =0, V IH = V DD , combined to obtain a high-impedance ou
42、tput V O =15V or0V For full operating temperature range: 15 I OZ 0,4 0,4 12,0 4A A3/A4 A3/A4 5.2.1.8.2 For limited operating temperature range: 15 I OZ 1,6 1,6 12,0 4A 5.2.1.9 Input capacitance per unit load (any input) C i 7,5 pF A3/A4BSQC790104:1992 BSI 11-1999 7 6 Marking Seeblank detail specific
43、ation. 7 Ordering information Seeblank detail specification. 8 Test conditions and inspection requirements In this clause, the subclause numbers refer to the generic specification, unless otherwise stated, and test methods are quoted from chapter IV of IEC Publication748-2. All tests shall be perfor
44、med at T amb =25 C unless otherwise stated (seeclause4 of the generic specification). All voltages are referenced to V SS . Table I NOTE 4Correlation measurements are allowed. Group A Lot-by-lot tests All tests are non-destructive (subclause 3.6.6 of IEC Publication747-10). Inspection or test IEC pu
45、blication Conditions of test Inspection requirements Limits Assessment level IL AQL Sub-group A1 External visual examination, marking conformity 747-10, subcl. 4.2.1.1 Seedetail specification Sub-group A2 Verification of the function 748-2-5 cl. 3 Sub-group A3 Static characteristics at+25 C 748-2, c
46、h. III, sect. 1 Sub-group A4a (seenote4) Static characteristics at maximum operating temperature 748-2, ch. III, sect. 1 Sub-group A4b (seenote4) Static characteristics at minimum operating temperature 748-2, ch. III, sect. 1 Sub-group A5 Dynamic characteristics at+25 C 748-2, ch. III, sect. 1BSQC79
47、0104:1992 8 BSI 11-1999 Table II Group B Lot-by-lot tests (In the case of category I, seethe generic specification, subclause 2.6) Only tests marked (D) are destructive (subclause 3.6.6 of IEC Publication747-10). Inspection or test IEC publication Conditions at T amb =25 C unless otherwise specified
48、 (seeclause4 of the generic specification) Inspection requirement limits min. max. Sub-group B1 Dimensions 747-10, subcl. 4.2.2 and Appendix B seeclause1 of this standard Sub-group B3 Robustness of terminations (if applicable) Bending (D) 749, ch. II, subcl. 1.2 Force = seeIEC749, ch. II, subcl. 1.2
49、 No damage Sub-group B4 Solderability (D) 749, ch. II, subcl. 2.1 seeIEC749, ch. II, subcl.2.1 Solder bath method Good wetting Sub-group B5 Rapid change of temperature: a) Cavity packages Rapid change of temperature suivis de: Electrical tests sealing, fine leak detection and: Sealing, gross leak detection b) Non-cavity and epoxy-sealed cavity packages Rapid change of temperature suivie de: w
